Samsung plans to invest about KRW 20 trillion by 2030 for advanced semiconductor R&D

Samsung Electronics Co., Ltd. today announced that it held a tool-in ceremony for its new semiconductor research and development complex (NRD-K) at its Giheung campus, marking a significant leap into the future. About 100 guests, including those from suppliers and customers, were in attendance to celebrate the milestone.

NRD-K broke ground in 2022 and is set to become a key research base for

Samsung’s memory, system LSI and foundry semiconductor R&D. With its advanced infrastructure, research and product-level verification will be able to take place under one roof. Samsung plans to invest about KRW 20 trillion by 2030 for the complex in an area covering about 109,000 square meters (m²) within its Giheung campus. The complex will also include an R&D-dedicated line scheduled to begin operation in mid-2025.

“NRD-K will bolster our development speed, enabling the company to create a virtuous cycle to accelerate fundamental research on next generation technology and mass production. We will lay the foundation for a new leap forward in Giheung, where Samsung Electronics’ 50-year history of semiconductors began, and create a new future for the next 100 years,” said Young Hyun Jun, Vice Chairman and Head of the Device Solutions Division at Samsung Electronics.

“At a time when the importance of win-win partnerships is greater than ever, Applied Materials is committed to accelerating innovation velocity through deep collaboration with Samsung Electronics, working together to drive a new wave of growth for the semiconductor industry,” said Park Gwang-Sun, head of Applied Materials Korea.

Samsung’s Giheung campus, located south of Seoul, is the birthplace of the world’s first 64-megabit (Mb) DRAM in 1992, marking the beginning of the company as a leader in the semiconductor industry. The establishment of the new R&D facility will usher in Samsung’s latest developments in process technology and manufacturing tools, extending the site’s legacy of innovation.

NRD-K will be set up with High NA extreme ultra-violet (EUV) lithography and new material deposition equipment aimed at accelerating the development of next-generation memory semiconductors such as 3D DRAM and V-NAND with more than 1,000 layers. In addition, wafer bonding infrastructure with innovative wafer-to-wafer bonding capabilities are also planned to dock.

Samsung invested a record KRW 8.87 trillion in R&D in the third quarter of this year, and continues to push boundaries in developing in future technologies, such as advanced packaging for high bandwidth memory (HBM) production.

Brings high performance with random read and write speeds of up to 1,050K IOPS and 1,400K IOPS, respectively

Samsung Electronics Co. Ltd., a leader in advanced memory technology, today announced the release of the 990 EVO Plus SSD, adding to its lineup of SSD products. With PCIe 4.0 support and Samsung’s latest NAND technology, the 990 EVO Plus SSD is a great choice for consumers seeking enhanced performance and power efficiency on their PCs. Designed for gaming, business, and creative endeavors.

“Our daily lives are increasingly demanding more data with the images we share on social media and high-quality video streaming,” said Hangu Sohn, Vice President of Memory Brand Product Biz Team at Samsung Electronics. “The 990 EVO Plus is built for laptop and desktop PC users seeking faster processing speeds and expanded storage capacity.”

Enhanced Performance and Power Efficiency

The 990 EVO Plus SSD is built on decades of Samsung’s innovative semiconductor technology. Its sequential read speeds are up to 7250 megabytes-per-second (MB/s) and its write speeds are up to 6300MB/s, an enhancement of up to 50% over the 990 EVO SSD. The performance boost is thanks to Samsung’s latest 8th generation V-NAND technology and 5-nanometer (nm) controller, while an innovative nickel-coated heat shield minimizes overheating, allowing 73% higher power efficiency than its predecessor.

The 4TB model has an incredible random read speed of 1,050K IOPS and 1,400K input/output operations per second (IOPS) for random write. This remarkable performance nearly rivals that of Samsung’s SSD products with DRAM, despite not using DRAM cache, making it a great solution for gaming and tasks that require high performance.

Expanded Storage Capacity

The ever-increasing demand for high-capacity storage devices is driven by managing large-sized files, high-quality video editing and next-generation gaming. To meet today’s growing storage requirements, the 990 EVO Plus SSD offers ample capacity with a 4TB model, exceeding the storage limits of the 990 EVO SSD. The 990 EVO Plus SSD is equipped with Samsung’s intelligent TurboWrite 2.0, revamped for maximized performance, offering rapid file transfer speeds and minimized lag.

Samsung Magician Software Support

Samsung Magician software presents a suite of optimization tools for enhanced functionality for all Samsung SSDs, including the 990 EVO Plus SSD. Users can streamline the data migration process for easy SSD upgrades. In addition, Samsung Magician protects valuable data, monitors drive health and offers customized performance optimization.

The 990 EVO Plus SSD is now available to consumers worldwide at a manufacturer’s suggested retail price (MSRP) of $109.99 for the 1TB model, $184.99 for the 2TB model, and $344.99 for the 4TB model. For more information — including warranty details — please visit samsung.com/SSD or semiconductor.samsung.com/internal-ssd/. For a user guide on how to install the 990 EVO Plus onto your laptop or computer, visit https://semiconductor.samsung.com/consumer-storage/ssdupgrade/.

Samsung SSD 990 EVO Plus SSD Specifications

Category	Samsung SSD 990 EVO Plus
Interface	PCIe® Gen 4.0 x4 / 5.0 x2 NVMe 2.01
Form Factor	M.2 (2280)
Storage Memory	Samsung V-NAND 3-bit TLC
Controller	Samsung In-house Controller
Capacity2	1TB	2TB	4TB
Sequential Read/Write Speed 3	Up to 7,250 MB/s, Up to 6,300 MB/s
ㄴRandom Read/Write Speed (QD32) 3	Up to 850K IOPS, 1,350K IOPS	Up to 1,000K IOPS, 1,350K IOPS	Up to 1,050K IOPS, 1,400K IOPS
Management Software	Samsung Magician Software
Data Encryption	AES 256-bit Full Disk Encryption, TCG/Opal V2.0,
	Encrypted Drive (IEEE1667)
Total Bytes Written	600TB	1200TB	2400TB
Warranty	Five-year Limited Warranty 4

¹ The NVM Express® design mark is a registered trademark of NVM Express, Inc.
² 1GB = 1,000,000,000 bytes by IDEMA. A certain portion of capacity may be used for system file and maintenance use, so the actual capacity may differ from what is indicated on the product label.
³Sequential and random performance measurements are based on IOmeter1.1.0. Performance may vary based on an SSD’s firmware version, system hardware & configuration.
Test system configuration: AMD Ryzen9 7950x 16-Core Processor CPU@4.5GHz, DDR5 4800MHz 16GBx2), OS-Windows 11 Pro 64bit, Chipset – ASRock X670E Taichi
⁴ Five years or total bytes written (TBW), whichever comes first. For more information on the warranty, please refer to the enclosed warranty document in the package. For more information on the warranty please visit www.samsung.com/ca/support/warranty/