The signing ceremony was held at Samsung’s most advanced chip manufacturing complex in Pyeongtaek, Korea, attended by Dr. Lisa Su, Chair and CEO of AMD, and Young Hyun Jun, Vice Chairman & CEO of Samsung Electronics.

“Samsung and AMD share a commitment to advancing AI computing, and this agreement reflects the growing scope of our collaboration,” said Young Hyun Jun, Vice Chairman & CEO of Samsung Electronics. “From industry-leading HBM4 and next-generation memory architectures to cutting-edge foundry and advanced packaging, Samsung is uniquely positioned to deliver unrivaled turnkey capabilities that support AMD’s evolving AI roadmap.”

“Powering the next generation of AI infrastructure requires deep collaboration across the industry,” said Dr. Lisa Su, Chair and CEO of AMD. “We are thrilled to expand our work with Samsung, bringing together their leadership in advanced memory with our Instinct GPUs, EPYC CPUs and rack-scale platforms. Integration across the full computing stack, from silicon to system to rack, is essential to accelerating AI innovation that translates into real-world impact at scale.”

Under the MOU, Samsung and AMD will align on primary HBM4 supply for the next-generation AMD AI accelerator, the AMD Instinct MI455X GPU, as well as advanced DRAM solutions for 6^th Gen AMD EPYC CPUs, codenamed “Venice.” These technologies will support next-generation AI systems combining AMD Instinct GPUs, AMD EPYC CPUs and rack-scale architectures such as the AMD Helios platform.

Samsung and AMD are closely collaborating on advanced memory technologies for AI and data center workloads. As memory bandwidth and power efficiency become increasingly critical to system-level performance, this collaboration will help deliver more optimized AI infrastructure for customers.

An industry-first to enter mass production, Samsung’s HBM4 is built on its most advanced 6th-generation 10-nanometer (nm)-class DRAM process (1c) and a 4nm logic base die, featuring processing speeds of up to 13 gigabits-per-second (Gbps) and maximum 3.3 terabytes-per-second (TB/s) bandwidth that exceeds industry standards.

Powered by Samsung HBM4’s industry-leading performance, reliability and energy efficiency, the AMD Instinct MI455X GPU is expected to be the optimum solution for high-performance systems handling AI model training and inference.

The MI455X GPU will serve as a key building block for the AMD Helios rack-scale architecture, designed to deliver the performance and scalability required for next-generation AI infrastructure.

As part of their collaboration, Samsung and AMD will also work together on high-performance DDR5 memory optimized for the 6^th Gen AMD EPYC CPUs. The companies aim to deliver industry-leading DDR5 memory solutions for systems built on the AMD Helios rack-scale architecture.

The two companies will also discuss opportunities for foundry partnership, through which Samsung would provide foundry services for next-generation AMD products.

Samsung and AMD have collaborated for nearly two decades across graphics, mobile and computing technologies, including Samsung serving as the primary HBM3E partner to AMD, powering the latest AMD Instinct MI350X and MI355X AI accelerators.

About AMD
AMD (NASDAQ: AMD) drives innovation in high-performance and AI computing to solve the world’s most important challenges. Today, AMD technology powers billions of experiences across cloud and AI infrastructure, embedded systems, AI PCs and gaming. With a broad portfolio of AI-optimized CPUs, GPUs, networking and software, AMD delivers full-stack AI solutions that provide the performance and scalability needed for a new era of intelligent computing. Learn more at www.amd.com.

The centerpiece of Samsung’s showcase at NVIDIA GTC 2026 will be the new sixth-generation HBM4, which is now in mass production and is designed for the NVIDIA Vera Rubin platform. Samsung’s HBM4 is expected to help accelerate the development of future AI applications, delivering consistent processing speeds of 11.7 gigabits-per-second (Gbps), which exceeds the industry standard of 8Gbps, and can be enhanced to 13Gbps.

By leveraging the most advanced sixth-generation 10-nanometer (nm)-class DRAM process (1c), Samsung has achieved stable yields and industry-leading performance. The company’s next-generation HBM4E, delivering 16Gbps per pin and 4.0 terabytes-per-second (TB/s) bandwidth, will be on display as well for the first time at GTC 2026.

Visitors will also be able to catch a glimpse of Samsung’s hybrid copper bonding (HCB) technology, a new method that will enable next-generation HBM to achieve 16 or more layers while reducing heat resistance by more than 20 percent, compared to thermal compression bonding (TCB).

An Alliance Taking the AI Era to the Next Level

The strong collaboration between Samsung and NVIDIA will be highlighted in the booth’s separate ‘NVIDIA Gallery,’ specifically featuring a broad lineup of Samsung’s cutting-edge technologies, such as HBM4, SOCAMM2 and PM1763 SSD that are designed for NVIDIA AI infrastructure.

Addressing the need for maximum efficiency and scalability in AI systems, Samsung’s SOCAMM2 based on low-power DRAM is an optimum server memory module that offers high bandwidth and flexible system integration for next-generation AI infrastructure. Samsung’s SOCAMM2 is currently in mass production, an industry-first to reach that milestone.

Designed for next-generation AI storage solutions, Samsung’s PM1763 SSD is based on the latest PCIe 6.0 interface offering fast data transfers and high capacities. The industry-leading PM1763 performance will be demonstrated on servers working with the NVIDIA SCADA programming model.

As part of the new NVIDIA BlueField-4 STX reference architecture for accelerated storage infrastructure in NVIDIA’s Vera Rubin platform, Samsung’s PM1753 SSD will show how it helps to enhance energy efficiency and system performance for inference workloads.

Memory Architecture To Scale Intelligent Manufacturing

Samsung will showcase its collaboration with NVIDIA on AI Factory development at GTC 2026, including plans to implement NVIDIA accelerated computing to scale Samsung’s AI Factory and fast-track digital twin manufacturing that leverage NVIDIA Omniverse libraries. This collaboration powers one of the world’s most comprehensive chip manufacturing infrastructures ― spanning memory, logic, foundry and advanced packaging.

Separately, Yong Ho Song, Executive Vice President and Head of AI Center at Samsung Electronics, will illustrate the two companies’ strategic collaboration in further detail through his speaker session on March 17, 2026. Titled ‘Transforming Semiconductor Manufacturing with Agentic AI from Design and Engineering to Production,’ the session will elaborate on the company’s AI Factory and share innovative end-to-end real-life use cases where AI and digital twins are reshaping semiconductor manufacturing with breakthroughs in electronic design automation (EDA) and computational lithography to designing and operating advanced manufacturing facilities powered by NVIDIA.

Efficient Memory for Local Intelligence

Samsung’s memory solutions also offer maximized efficiency for local AI workloads on personal devices. During GTC 2026, Samsung will showcase tailored and efficient solutions for personal AI supercomputers, including the Samsung PM9E3 and PM9E1 NAND for NVIDIA DGX Spark.

Additionally, Samsung will display DRAM solutions, LPDDR5X and LPDDR6, that are designed for seamless integration into premium smartphones, tablets and wearable devices, offering faster data throughput and lower latency. LPDDR5X delivers speeds of up to 25Gbps per pin, while cutting power consumption by up to 15 percent, enabling ultra‑responsive mobile experiences, high‑resolution gaming and AI‑enhanced applications without sacrificing battery life.

Building on that foundation, LPDDR6 pushes bandwidth further to a scalable 30‑35 Gbps per pin and introduces advanced power‑management features such as adaptive voltage scaling and dynamic refresh control, which together provide the performance needed for next‑generation edge‑AI workloads.

By proactively leveraging its most advanced 6th-generation 10 nanometer (nm)-class DRAM process (1c), the company achieved stable yields and industry-leading performance from the outset of mass production — all accomplished seamlessly and without any additional redesigns.

“Instead of taking the conventional path of utilizing existing proven designs, Samsung took the leap and adopted the most advanced nodes like the 1c DRAM and 4nm logic process for HBM4,” said Sang Joon Hwang, Executive Vice President and Head of Memory Development at Samsung Electronics. “By leveraging our process competitiveness and design optimization, we are able to secure substantial performance headroom, enabling us to satisfy our customers’ escalating demands for higher performance, when they need them.”

Setting the Bar for Maximum Performance and Efficiency

Samsung’s HBM4 delivers a consistent processing speed of 11.7 gigabits-per-second (Gbps), exceeding the industry standard of 8Gbps by approximately 46% and setting a new benchmark for HBM4 performance. This represents a 1.22x increase over the maximum pin speed of 9.6Gbps of its predecessor, HBM3E. HBM4’s performance can be further enhanced up to 13Gbps, as well, effectively mitigating data bottlenecks that intensify as AI models continue to scale up.

Also, total memory bandwidth per single stack is increased by 2.7x compared to HBM3E, to a maximum of 3.3 terabytes-per-second (TB/s).

Through 12-layer stacking technology, Samsung offers HBM4 in capacities ranging from 24 gigabytes (GB) to 36GB. The company will also keep its capacity options aligned with future customer timelines by utilizing 16-layer stacking, which will expand offerings to up to 48GB.

In order to address power consumption and thermal challenges driven by the doubling of data I/Os from 1,024 to 2,048 pins, Samsung has integrated advanced low-power design solutions into the core die. HBM4 also achieves a 40% improvement in power efficiency by leveraging low-voltage through silicon via (TSV) technology and power distribution network (PDN) optimization, while enhancing thermal resistance by 10% and heat dissipation by 30%, compared to HBM3E.

By bringing outstanding performance, energy efficiency and high reliability to tomorrow’s datacenter environments, Samsung’s HBM4 enables customers to achieve maximized GPU throughput and effectively manage their total cost of ownership (TCO).

Comprehensive Yet Agile Production Capabilities

Samsung is committed to advancing its HBM roadmap through its comprehensive manufacturing resources — including one of the largest DRAM production capacities and dedicated infrastructures in the industry — ensuring a resilient supply chain to meet the projected surge in HBM4 demand.

A tightly integrated Design Technology Co-Optimization (DTCO) between the company’s Foundry and Memory Businesses allows it to secure the highest standards of quality and yield. Additionally, extensive in-house expertise in advanced packaging allows for streamlined production cycles and reduced lead times.

Samsung also plans to broaden the scope of its technical partnership with key partners, based on close discussions with global GPU manufacturers and hyperscalers focused on next-generation ASIC development.

Samsung anticipates that its HBM sales will more than triple in 2026 compared to 2025, and is proactively expanding its HBM4 production capacity. Following the successful introduction of HBM4 to market, sampling for HBM4E is expected to begin in the second half of 2026, while custom HBM samples will start reaching customers in 2027, according to their respective specifications.

Samsung’s AI Factory will integrate every aspect of semiconductor manufacturing, from design and process to equipment, operations and quality control, into a single intelligent network, where AI continuously analyzes, predicts and optimizes production environments in real time.

The Samsung AI Factory goes beyond traditional automation, serving as an intelligent manufacturing platform that connects and interprets the immense data generated across chip design, production and equipment operations.

From 25+ Year Collaboration to a Stronger AI Chip Alliance

Samsung and NVIDIA celebrate a collaboration that spans more than 25 years, beginning with Samsung’s DRAM powering NVIDIA’s early graphics cards and extending through foundry partnership.

In addition to their ongoing collaborations, Samsung and NVIDIA are also working together on HBM4. With incredibly high bandwidth and energy efficiency, Samsung’s advanced HBM solutions are expected to help accelerate the development of future AI applications and form a critical foundation for manufacturing infrastructure driven by these technologies.

Built with the company’s 6th-generation 10-nanometer (nm)-class DRAM and a 4nm logic base die, Samsung HBM4’s processing speeds can reach 11 gigabits-per-second (Gbps), far exceeding the JEDEC standard of 8Gbps.

Samsung will also continue to deliver next-generation memory solutions, including HBM, GDDR, and SOCAMM, as well as foundry services, driving innovation and scalability across the global AI value chain.

Accelerating the Transition to Intelligence-Driven Manufacturing

Over the next several years, Samsung plans to implement NVIDIA accelerated computing to scale its AI Factory and accelerate digital twin manufacturing powered by NVIDIA Omniverse libraries across one of the world’s most comprehensive chip manufacturing infrastructures ― spanning memory, logic, foundry and advanced packaging.

Leveraging NVIDIA cuLitho and CUDA-X libraries for its optical proximity correction (OPC) process, Samsung has achieved a 20x gain in computational lithography performance. As a critical step in accurate wafer patterning, the enhanced OPC enables AI to predict and correct circuit pattern variations with far greater speed and precision, reducing development cycles.

For electronic design automation (EDA), the companies are collaborating with EDA partners to develop next-generation GPU-accelerated EDA tools and design technologies.

Using NVIDIA Omniverse libraries, Samsung is building digital twins that can visualize entire fab operations virtually. These virtual environments identify anomalies, perform predictive maintenance and optimize production before changes are applied in the physical world.

Samsung plans to extend its AI Factory infrastructure to its global manufacturing hubs, including Taylor, U.S., bringing greater intelligence and agility to its worldwide semiconductor operations.

Building Out the AI Ecosystem Across Generative AI and Robotics

Samsung has been developing proprietary AI models that power more than 400 million of its devices. These models are also integrated into the company’s internal manufacturing systems, driving intelligence and innovation across its production processes.

Built on NVIDIA accelerated computing and the Megatron framework, Samsung’s AI models demonstrate advanced reasoning capabilities that deliver exceptional performance in real-time translation, multilingual conversations and intelligent summarization.

In intelligent robotics, Samsung is leveraging the NVIDIA RTX PRO 6000 Blackwell Server Edition platform to advance manufacturing automation and humanoid robotics, accelerating adoption and enhancing autonomy in next-generation physical AI applications.

Samsung is also working with a range of NVIDIA AI platforms to connect virtual simulation and real-world robot data, enabling robots to understand their surroundings, make decisions and operate intelligently in real-life settings. Using the NVIDIA Jetson Thor robotic platform, Samsung is accelerating real-time AI reasoning, task execution and safety controls in intelligent robots.

Samsung plans to extend the use of these technologies into its AI Factory infrastructure and across its broader business areas, building out an intelligent manufacturing ecosystem that brings together AI and robotics.

Connecting Consumers and Industries Through AI

Samsung is also working with NVIDIA, Korean telecom operators, academia and research institutions to foster collaboration on AI-RAN development.

AI-RAN is a key next-generation communication technology that integrates AI computing power into mobile network capabilities. It allows agentic and physical AI ― such as robots, drones and industrial automation equipment ― to intelligently operate, sense, process data and perform inferences in real-time at the network edge, closer to the points where physical AI connect to the network. This AI-powered mobile network will play a crucial role as a neural network essential in widespread adoption of physical AI.

This new initiative builds upon Samsung and NVIDIA’s collaboration last year, which successfully completed the proof-of-concept of AI-RAN through combining Samsung’s software-based network and NVIDIA GPU. The companies will continue to strengthen their ongoing collaboration on AI-RAN.

As a state-of-the-art facility, NRD-K broke ground in 2022 and is set to become a key research base for Samsung’s memory, system LSI and foundry semiconductor R&D. With its advanced infrastructure, research and product-level verification will be able to take place under one roof. Samsung plans to invest about KRW 20 trillion by 2030 for the complex in an area covering about 109,000 square meters (m²) within its Giheung campus. The complex will also include an R&D-dedicated line scheduled to begin operation in mid-2025.

▲ Young Hyun Jun, Vice Chairman and Head of the Device Solutions Division at Samsung Electronics, gives a speech at the tool-in ceremony for Samsung’s new semiconductor research and development complex (NRD-K) in Giheung, Korea.

“NRD-K will bolster our development speed, enabling the company to create a virtuous cycle to accelerate fundamental research on next-generation technology and mass production. We will lay the foundation for a new leap forward in Giheung, where Samsung Electronics’ 50-year history of semiconductors began, and create a new future for the next 100 years,” said Young Hyun Jun, Vice Chairman and Head of the Device Solutions Division at Samsung Electronics.

“At a time when the importance of win-win partnerships is greater than ever, Applied Materials is committed to accelerating innovation velocity through deep collaboration with Samsung Electronics, working together to drive a new wave of growth for the semiconductor industry,” said Park Gwang-Sun, Head of Applied Materials Korea.

▲ Samsung Electronics Vice Chairman Young Hyun Jun, center, poses for a photo with executives during a tool-in ceremony at the Giheung Campus. * (left) Wanwoo Choi Head of People Team, Taeyang Yoon Chief Safety Officer, Jiwoon Im NRD-K P/J group head, Siyoung Choi Head of Foundry Business, BongHyun Kim DRAM Process Development Team, Jung-Bae Lee head of Memory Business, r, Young Hyun Jun, Vice Chairman and Head of the Device Solutions Division, Yong In Park Head of System LSI Business, Yujin Lee Flash Process Development Team, Seok Woo Nam Corporate President in charge / FAB Engineering & Operations, Jaihyuk Song Device Solutions CTO, HongGyeong Kim Head of Corporate Office.

Samsung’s Giheung campus, located south of Seoul, is the birthplace of the world’s first 64-megabit (Mb) DRAM in 1992, marking the beginning of the company’s semiconductor leadership. The establishment of the new R&D facility will usher in the latest developments in process technology and manufacturing tools, extending the site’s legacy at the forefront of innovation.

▲ Samsung Electronics executives poses for a photo during a tool-in ceremony at the Giheung Campus.

NRD-K will be set up with High NA extreme ultra-violet (EUV) lithography and new material deposition equipment aimed at accelerating the development of next-generation memory semiconductors such as 3D DRAM and V-NAND with more than 1,000 layers. In addition, wafer bonding infrastructure with innovative wafer-to-wafer bonding capabilities is also planned to dock.

Samsung invested a record KRW 8.87 trillion in R&D in the third quarter of this year, and continues to push boundaries to secure competitiveness in future technologies, such as advanced packaging for high bandwidth memory (HBM) production.

Samsung Electronics, the world leader in advanced memory technology, today announced it has developed the industry’s first 24-gigabit (Gb) GDDR7¹ DRAM. In addition to the industry’s highest capacity, the GDDR7 features the fastest speed, positioning itself as the optimum solution for next-generation applications.

With its high capacity and powerful performance, the 24Gb GDDR7 will be widely utilized in various fields that require high-performance memory solutions, such as data centers and AI workstations, extending beyond the traditional applications of graphics DRAM in graphics cards, gaming consoles and autonomous driving.

“After developing the industry’s first 16Gb GDDR7 last year, Samsung has reinforced its technological leadership in the graphics DRAM market with this latest achievement,” said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. “We will continue to lead the graphics DRAM market by bringing next-generation products that align with the growing needs of the AI market.” The 24Gb GDDR7 utilizes 5th-generation 10-nanometer (nm)-class DRAM, which enables cell density to increase by 50% while maintaining the same package size as the predecessor.

In addition to the advanced process node, three-level Pulse-Amplitude Modulation (PAM3) signaling is used to help achieve the industry-leading speed for graphics DRAM of 40 gigabits-per-second (Gbps), a 25% improvement over the previous version. The GDDR7’s performance can be further enhanced to up to 42.5Gbps, depending on the usage environment.

Power efficiency is also enhanced by applying technologies that were previously used in mobile products to graphics DRAM for the first time. By implementing methods like clock control management² and dual VDD design,³ unnecessary power consumption can be significantly reduced, leading to an improvement of over 30% in power efficiency.

To boost operational stability during high-speed operations, the 24Gb GDDR7 minimizes current leakage by using power gating design techniques.

Validation for the 24Gb GDDR7 in next-generation AI computing systems from major GPU customers will begin this year, with plans for commercialization early next year.

¹ Graphics Double Data Rate 7 (GDDR7)
² Clock control management refers to methods used to regulate the clocks (timing signals) of chips.
³ Dual VVD (voltage supply) design is a power management technique that supplies different voltage levels in the same chip.

Samsung Electronics, the world leader in advanced memory technology, today announced it has begun mass producing PM9E1, a PCle 5.0 SSD with the industry’s highest performance and largest capacity. Built on its in-house 5-nanometer (nm)-based controller and eighth-generation V-NAND (V8) technology, the PM9E1 will provide powerful performance and enhanced power efficiency, making it an optimal solution for on-device AI PCs. Key attributes in SSDs, including performance, storage capacity, power efficiency and security, have all been improved compared to its predecessor (PM9A1a).

“Our PM9E1 integrated with a 5nm controller delivers industry-leading power efficiency and utmost performance validated by our key partners,” said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. “In the rapidly growing on-device AI era, Samsung’s PM9E1 will offer a robust foundation for global customers to effectively plan their AI portfolios.”

Thanks to the eight-channel PCIe 5.0 interface, the sequential read and write speeds of the new SSD have more than doubled compared to the previous generation, reaching up to 14.5 gigabytes-per-second (GB/s) and 13GB/s, respectively. This powerful performance enables faster data transfer even with data-intensive AI applications, allowing a 14GB large language model (LLM) to be transferred from the SSD to DRAM in less than a second.

The PM9E1 offers a range of storage options, including 512GB, 1 terabyte (TB), 2TB and the industry’s largest capacity of 4TB. The 4TB option is especially an optimum solution for PC users in need of high-capacity storage for large-sized files such as AI-generated contents, data-heavy programs and high-resolution videos, as well as tasks that require intensive workloads such as gaming.

Additionally, the significantly improved power efficiency of over 50% allows for longer battery life which is ideal for on-device AI applications.

For stronger security measures, Samsung has applied Security Protocol and Data Model (SPDM) v1.2 to the PM9E1. The SPDM specification provides ‘Secure Channel,’ ‘Device Authentication’ and ‘Firmware Tampering Attestation’ technologies that can help prevent supply chain attacks involving forgery or manipulation of stored data in the product during production or distribution processes.

Starting with PM9E1, Samsung plans to expand its advanced SSD offerings to global PC makers and expects to launch PCIe 5.0-based consumer products in the future to solidify its leadership in the on-device AI market.

Samsung Electronics, the world leader in advanced memory technology, today announced the release of the 990 EVO Plus, adding to its lineup of leading SSD products. With PCIe 4.0 support and latest NAND technology, the 990 EVO Plus is an ideal solution for consumers seeking enhanced performance and power efficiency on their PCs. Optimized for gaming, business and creative endeavors.

“Our daily lives are increasingly demanding more data with the images we share on social media and high-quality video streaming,” said Hangu Sohn, Vice President of Memory Brand Product Biz Team at Samsung Electronics. “The 990 EVO Plus is built for laptop and desktop PC users seeking faster processing speeds and expanded storage capacity.”

Enhanced Performance and Power Efficiency

The 990 EVO Plus is built on decades of Samsung’s pioneering semiconductor technology with proven reliability. Sequential read speeds come up to 7250 megabytes-per-second (MB/s) and write speeds up to 6300MB/s, an enhancement of up to 50% over the previous 990 EVO. The performance boost is thanks to Samsung’s latest 8th generation V-NAND technology and 5-nanometer (nm) controller, while an innovative nickel-coated heat shield minimizes overheating, allowing 73% higher power efficiency than its predecessor.

The 4TB model has an industry-leading random read speed of 1,050K IOPS and 1,400K input/output operations per second (IOPS) for random write. This remarkable performance nearly rivals that of SSD products with DRAM, despite not using DRAM cache, making it an optimal solution for gaming and AI tasks that require high performance.

Expanded Storage Capacity

The ever-increasing demand for high-capacity storage devices is driven by managing large-sized files, high-quality video editing and next-generation gaming. To meet today’s growing storage requirements, the 990 EVO Plus offers ample capacity with a 4TB model, exceeding the storage limits of the 990 EVO. The 990 EVO Plus is equipped with Samsung’s intelligent TurboWrite 2.0, revamped for maximized performance, offering rapid file transfer speeds and reduced lag.

Samsung Magician Software Support

Samsung Magician software presents a suite of optimization tools for enhanced functionality for all Samsung SSDs, including the 990 EVO Plus. Users can streamline the data migration process for SSD upgrades effortlessly and securely. In addition, Samsung Magician protects valuable data, monitors drive health and offers customized performance optimization.

The 990 EVO Plus will be available to consumers worldwide at a manufacturer’s suggested retail price (MSRP) of $109.99 for the 1TB model, $184.99 for the 2TB model, and $344.99 for the 4TB model. For more information — including warranty details — please visit samsung.com/SSD or semiconductor.samsung.com/internal-ssd/. For a user guide on how to install the 990 EVO Plus onto your laptop or computer, visit https://semiconductor.samsung.com/consumer-storage/ssdupgrade/

Samsung SSD 990 EVO Plus Specifications

	Samsung SSD 990 EVO Plus
Interface	PCIe® Gen 4.0 x4 / 5.0 x2 NVMe 2.01
Form Factor	M.2 (2280)
Storage Memory	Samsung V-NAND 3-bit TLC
Controller	Samsung In-house Controller
Capacity2	1 TB	2 TB	4 TB
Sequential Read/Write Speed 3,4	Up to 7,150 MB/s, 6,300 MB/s	Up to 7,250 MB/s, 6,300 MB/s	Up to 7,250 MB/s, 6,300 MB/s
Random Read/Write Speed (QD32) 3,4	Up to 850K IOPS, 1,350K IOPS	Up to 1,000K IOPS, 1,350K IOPS	Up to 1,050K IOPS, 1,400K IOPS
Management Software	Samsung Magician Software
Data Encryption	AES 256-bit Full Disk Encryption, TCG/Opal V2.0,
	Encrypted Drive (IEEE1667)
Total Bytes Written	600 TB	1200 TB	2400 TB
Warranty 5	Five-year Limited Warranty 6

* Product availability may vary depending on model and region.

¹ The NVM Express® design mark is a registered trademark of NVM Express, Inc.
² 1GB = 1,000,000,000 bytes by IDEMA. A certain portion of capacity may be used for system file and maintenance use, so the actual capacity may differ from what is indicated on the product label.
^3,4 Sequential and random performance measurements are based on IOmeter1.1.0. Performance may vary based on an SSD’s firmware version, system hardware & configuration.
Test system configuration: AMD Ryzen9 7950x 16-Core Processor CPU@4.5GHz, DDR5 4800MHz 16GBx2), OS-Windows 11 Pro 64bit, Chipset – ASRock X670E Taichi
⁵ Samsung Electronics shall not be liable for any loss, including but not limited to loss of data or other information contained on Samsung Electronics’ products or loss of profit or revenue which may be incurred by the user. For more information on the warranty, please visit samsung.com/SSD or semiconductor.samsung.com/internal-ssd/
⁶ Five years or total bytes written (TBW), whichever comes first. For more information on the warranty, please refer to the enclosed warranty document in the package.

Samsung Electronics, the world leader in advanced memory technology, today announced it has successfully developed the industry’s first PCIe 4.0 automotive SSD based on eighth-generation vertical NAND (V-NAND). With industry-leading speeds and enhanced reliability, the new auto SSD, AM9C1 is an optimal solution for on-device AI capabilities in automotive applications.

With about 50% improved power efficiency compared to its predecessor, the AM991, the new 256GB auto SSD will deliver sequential read and write speeds of up to 4,400 megabytes-per-second (MB/s) and 400MB/s, respectively.

“We are collaborating with global autonomous vehicle makers and providing high-performance, high-capacity automotive products,” said Hyunduk Cho, Vice President and Head of Automotive Group at Samsung Electronics’ Memory Business. “Samsung will continue to lead the Physical AI¹ memory market that encompasses applications from autonomous driving to robotics technologies.”

Built on Samsung’s 5-nanometer (nm) controller and providing a single-level cell (SLC) Namespace² feature, the auto SSD AM9C1 demonstrates high performance for easier access to large files. By switching from its original triple-level cell (TLC) state to SLC mode, users can enjoy boosted read and write speeds of up to 4,700MB/s and 1,400MB/s, respectively, while also benefiting from the added reliability of SLC SSDs.

The 256GB AM9C1 is currently being sampled by key partners and is expected to begin mass production by the end of this year. Samsung plans to offer multiple storage capacities for the AM9C1 ranging from 128GB to 2 terabytes (TB) to address the growing demand for high-capacity automotive SSDs. The 2TB model, which is set to offer the industry’s largest capacity in this product category, is scheduled to start mass production early next year.

Through intensified board-level tests, Samsung’s new auto SSD satisfies the automotive semiconductor quality standard AEC-Q100³ Grade 2, ensuring stable performance over a wide temperature range of -40°C to 105°C.

To further meet the high standards of the automotive industry in terms of durability and stability, Samsung also conducts various quality assurance processes. The company received ASPICE CL3 authentication⁴ for its UFS 3.1 product in March this year.

In an effort to obtain CSMS certification based on ISO/SAE 21434,⁵ Samsung will continue to actively enhance the technological reliability and stability of its automotive solutions.

“ASPICE and ISO/SAE 21434 certifications are milestones that affirm the reliability and stability of our technology,” said Hwaseok Oh, Executive Vice President at Samsung Electronics’ Memory Business. “Beyond these achievements, Samsung will continue to elevate its product stability and quality by consistently providing the best solution to key partners.”

¹ AI such as robots and autonomous vehicles that perceives and interacts with the physical world through sensors.
² Provides SLC partition with better performance and reliability than TLC, allowing users to configure it in accordance to data type. However, when switched to SLC mode capacity decreases to 1/3 of the TLC.
³ Global standard that Automotive Component Manufacturers Association (ACMA) has established for the reliability evaluation procedures and criteria for automotive electronic components.
⁴ Automotive Software Process Improvement and Capability dEtermination (ASPICE) is a software development standard developed and distributed by the German Automotive Association (VDA) that evaluates the reliability and competence of automotive component manufacturers’ software development processes. It is divided into Capability Level (CL) stages 0 to 5, with CL3 meaning that an organization has established a systematic process and can effectively execute it.
⁵ Cyber Security Management System certification is an international standard designed to enhance cybersecurity in the automotive industry based on ISO/SAE 21434, covering cybersecurity processes and requirements from design to development, evaluation and mass production.

Samsung Electronics, the world leader in advanced memory technology, today announced it has begun mass production of its one-terabit (Tb) quad-level cell (QLC) 9th-generation vertical NAND (V-NAND).

With the industry’s first mass production of QLC 9th-generation V-NAND, following the industry’s first triple-level cell (TLC) 9th-generation V-NAND production in April this year, Samsung is solidifying its leadership in the high-capacity, high-performance NAND flash market. 

“Kicking off the successful mass production of QLC 9th-generation V-NAND just four months after the TLC version allows us to offer a full lineup of advanced SSD solutions that address the needs for the AI era,” said SungHoi Hur, Executive Vice President and Head of Flash Product & Technology at Samsung Electronics. “As the enterprise SSD market shows rapid growth with stronger demand for AI applications, we will continue to solidify our leadership in the segment through our QLC and TLC 9th-generation V-NAND.”  

Samsung plans to expand applications of the QLC 9th-generation V-NAND, starting with branded consumer products and extending into mobile Universal Flash Storage (UFS), PCs and server SSDs for customers including cloud service providers. 

Samsung’s QLC 9th-generation V-NAND brings together a number of innovations that have produced technological breakthroughs:

• Samsung’s unrivaled Channel Hole Etching technology was used to achieve the highest layer count in the industry with a double stack structure. Utilizing the technological expertise gained from the TLC 9th-generation V-NAND, the area of the cells and the peripheral circuits have been optimized, achieving an industry-leading bit density approximately 86% higher than that of the previous generation QLC V-NAND.
• Designed Mold technology adjusts the spacing of Word Lines (WL), which operate the cells, to ensure uniformity and optimization of cell characteristics across and within layers. These traits have become increasingly important as the V-NAND layer counts increase. Adopting Designed Mold has improved data retention performance by roughly 20% compared to previous versions, leading to enhanced product reliability
  
• Predictive Program technology anticipates and controls cell state changes to minimize unnecessary actions. Samsung’s QLC 9th-generation V-NAND has doubled write performance and improved data input/output speed by 60%¹ through advancements to this technology.
• Data read and write power consumption decreased by about 30% and 50% respectively,² with the use of Low-Power Design. This method reduces the voltage that drives NAND cells and minimizes power consumption by sensing only the necessary bit lines (BL). 

¹ Compared to the previous generation QLC V-NAND
² Compared to the previous generation QLC V-NAND

Samsung Electronics, the world leader in advanced memory technology, today announced the successful qualification of Samsung’s automotive LPDDR4X memory for use with the Snapdragon^® Digital Chassis from Qualcomm Technologies, Inc. The LPDDR4X memory is set to be applied in premium in-vehicle infotainment (IVI) and advanced driver-assistance systems (ADAS).

Samsung’s automotive LPDDR4X qualification signifies the company’s dedicated long-term support of customers with a variety of new products and technologies for automotive applications. This also helps ensure robust supply chain stability and enhanced support for ecosystem partners who are utilizing the Snapdragon Digital Chassis.

“With a broad automotive lineup of AEC-Q100¹-qualified DRAM and NAND products, Qualcomm Technologies is an ideal partner to work with for long-term customer solutions,” said Hyunduk Cho, Vice President and Head of the Automotive Group at Samsung Electronics’ Memory Business. “Through Samsung’s leadership in design, manufacturing and packaging for memory solutions, our work with Qualcomm Technologies can help support rapid development cycles while ensuring reliability, verification and exceptional product control, which are essential for the automotive industry.”

Samsung is also developing its next-generation automotive LPDDR5, and samples are expected to be available within the fourth quarter of this year. The LPDDR5 product will be able to support the highest speed currently available in the automotive memory market at up to 9.6 gigabits-per-second (Gbps), even in extreme temperatures.

¹ The AEC-Q100 standard is a stress-test qualification for packaged integrated circuits (ICs) used in automotives.

Samsung Electronics, the world leader in advanced memory technology, today announced it has begun mass production for the industry’s thinnest 12 nanometer (nm)-class, 12-gigabyte (GB) and 16GB LPDDR5X DRAM packages, solidifying its leadership in the low-power DRAM market.

Leveraging its extensive expertise in chip packaging, Samsung is able to deliver ultra-slim LPDDR5X DRAM packages that can create additional space within mobile devices, facilitating better airflow. This supports easier thermal control, a factor that is becoming increasingly critical especially for high-performance applications with advanced features such as on-device AI.

“Samsung’s LPDDR5X DRAM sets a new standard for high-performance on-device AI solutions, offering not only superior LPDDR performance but also advanced thermal management in an ultra-compact package,” said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. “We are committed to continuous innovation through close collaboration with our customers, delivering solutions that meet the future needs of the low-power DRAM market.”

With the new LPDDR5X DRAM packages, Samsung offers the industry’s thinnest 12 nm-class LPDDR DRAM in a 4-stack structure,¹ reducing the thickness by approximately 9% and improving heat resistance by about 21.2%, compared to the previous generation product.

By optimizing printed circuit board (PCB) and epoxy molding compound (EMC)² techniques, the new LPDDR DRAM package is as thin as a fingernail at 0.65 millimeters (mm), the thinnest among existing LPDDR DRAM of 12GB or above. Samsung’s optimized back-lapping³ process is also used to minimize the package height.

Samsung plans to continue expanding the low-power DRAM market by supplying its 0.65mm LPDDR5X DRAM to mobile processor makers as well as mobile device manufacturers. As demand for high-performance, high-density mobile memory solutions in smaller package sizes continues to grow, the company plans to develop 6-layer 24GB and 8-layer 32GB modules into the thinnest LPDDR DRAM packages for future devices.

¹ Structure with four layers packaged together, and each layer consists of two LPDDR DRAMs.
² Material that protects semiconductor circuits from various external environments such as heat, impacts, and moisture.
³ Grinding the backside of a wafer.

Samsung Electronics, the world leader in advanced memory technology, today announced the release of its 1-terabyte (TB) high-capacity microSD cards PRO Plus and EVO Plus. By adopting Samsung’s eighth-generation V-NAND (V8) technology, the PRO Plus and EVO Plus boast enhanced performance and high capacity, ideal for content creators and tech enthusiasts needing quick file transfers and storage for everyday use across their devices in everyday use.

“Creators and tech enthusiasts are increasingly using portable devices such as smartphones and handheld gaming devices to store data that demand high-performance and high-capacity,” said Hangu Sohn, Vice President of Memory Brand Product Biz Team at Samsung Electronics. “The new high-capacity microSD cards, PRO Plus and EVO Plus, are response to the demand for storing large amounts of high-quality data in a reliable and secure way.”

More Storage Capacity

The increased storage size of the PRO Plus and EVO Plus gives users the high-capacity storage options entering the TB capacity range that is mainly used in SSD devices. With 1TB of storage, users can store more than 400K 4K UHD (2.3MB) images or more than 45 console games (20GB). The enhanced capacity of the PRO Plus and EVO Plus unlock new possibilities for everyday devices on the go such as smartphones, action cameras, drones and handheld game consoles. The PRO Plus and EVO Plus offer a range of storage options including 128-gigabyte (GB), 256GB, 512GB and 1TB. The EVO Plus also has a 64GB option.

Enhanced Performance

The PRO Plus allows users storing large amounts of high-quality content to experience excellent performance for a seamless creative workflow. It promises exceptional efficiency and solid reliability with its storage options from 128GB to 1TB, offering sequential read speeds of up to 180 megabytes-per-second (MB/s) coupled with sequential write speeds of up to 130MB/s.¹ For fast loading and multitasking, the PRO Plus has UHS Speed Class 3 (U3) and Video Speed Class 30 (V30) for 4K UHD Video with A2 App Performance, allowing users to worry less about storing and organizing their content and focus on creating.

For daily use, storing data on devices can be enhanced with the EVO Plus with transfer speeds of up to 160MB/s.² It also boasts a UHS Speed Class 3 (U3) and Video Speed Class 30 (V30)³ for 4K UHD video with A2⁴ App Performance so users can experience seamless loading and multitasking. The 64GB EVO Plus model has varying specifications with UHS Speed Class 1 (U1), Video Speed Class 10 (V10) and A1 App Performance.

Maximized Power Efficiency and Increased Reliability With 28nm Controller

Samsung’s PRO Plus and EVO Plus 1TB microSD cards show improved power efficiency with its controller based on 28-nanometer (nm) process technology, compared to company’s previous lineup with a 55nm one. This allows users to make the most out of their device’s battery life with Samsung’s 1TB card.

With an Error Correction Code (ECC)⁵’s Low Density Parity Check (LDPC)⁶ code 2-kilobyte (KB) engine, the PRO Plus and EVO Plus 1TB cards offer enhanced durability for a higher volume of write-and-erase cycles, ensuring safer data storage over extended periods.

Proven Durability for Reliable Storage

The PRO Plus and EVO Plus are ultra-durable and have undergone comprehensive testing, achieving high-reliability ratings in six areas. Tested extensively under harsh conditions, the PRO Plus and EVO Plus are designed to withstand challenging environments and can withstand water,⁷ high temperatures,⁸ X-rays⁹ and magnetic field.¹⁰ For creators venturing into challenging conditions, the PRO Plus and EVO Plus have demonstrated durability through extensive testing and are drop-proof¹¹ and resistant to wear-out.¹²*¹³

Compatible Across Devices

The PRO Plus and EVO Plus are compatible with a range of everyday devices so that data is stored securely, including Android^TM smartphones, tablets and handheld gaming consoles. They are also compatible with devices used in harsh environments, such as action cameras or drones for creating, editing and saving data.

The 1TB models of the PRO Plus and EVO Plus microSD Cards will be available worldwide in July, 2024. The PRO Plus has a manufacturer’s suggested retail price (MSRP) ranging from $24.99 for the 128GB model to $153.99 for the 1TB model. The MSRP for the EVO Plus ranges from $12.99 for the 64GB model to $131.99 for the 1TB model.

The PRO Plus and EVO Plus have a 10-year limited warranty.

microSD Cards PRO Plus and EVO Plus Specifications

¹ The foregoing read & write speeds are based on internal tests conducted under controlled conditions. Actual speeds may vary depending upon card capacity. Stated performance was achieved by using PRO Plus microSD cards with Samsung readers.
² The foregoing read & write speeds are based on internal tests conducted under controlled conditions. Actual speeds may vary depending upon card capacity. Stated performance was achieved by using PRO Plus microSD cards with Samsung readers.
³ UHS Speed class (U1, U3) and Video Speed Class (V10, V30) are the speed class defined by SD Association, based on minimum sequential write speed of the memory card, For more information, please refer to the SD specification.
⁴ Application Performance class (A2) are the speed class defined by the SD Association, based on the minimum random read and write speed of the memory card. For more information, please refer to the SD specification.
⁵ Engine that detects and corrects errors in NAND flash
⁶ Error correction code that detects and corrects errors during memory transmission
⁷ 1M depth, salt water (3% NaCl), 35℃, 24hr
⁸ Operating temperatures of -25℃ ~ 85℃, Non-Operating temperatures of -40℃ ~ 85℃
⁹ 0.1 Gy of medium-energy radiation, 210 secs
¹⁰ 15,000 Gauss, 30 secs
¹¹ 10 cycles drop from 1.5 meter
¹² Insertions and extractions the card for a total of 10,000 cycles
¹³ Results from actual use may vary. Any damage or loss of data incurred as a result of exposure to water, high temperatures, X-rays, magnets, drop and wear-out are not warranted by Samsung. All tests were performed in accordance with microSD Card Addendum to Physical Layer Specifications Version 7.10 by SD Association. Please refer to the products’ page for more information.
¹⁴ 1GB = 1,000,000,000 bytes, actual usable storage capacity may vary. User capacity measured with SD Formatter 3.1 tool with FAT file system.
¹⁵ Performance results are based on internal testing conditions. Stated performance was achieved by using PRO Plus / EVO Plus microSD card with Samsung microSD Card reader (ver3.0) in a controlled environment. Actual read/write speeds may vary depending on host configuration and user environment. For more information, please refer to the datasheet.
¹⁶ V10, V30: Video Speed Class means sustained video capture rates of 10MB/s (V10) and 30MB/s (V30) which enable to support real-time video recording to UHS Bus IF products. Transfer speeds may vary by host device.
¹⁷ For more information on the warranty, please visit https://semiconductor.samsung.com/consumer-storage/support/documents/

Samsung Electronics, the world leader in advanced memory technology, today announced it has successfully completed verification of the industry’s fastest 10.7 gigabit-per-second (Gbps) Low Power Double Data Rate 5X (LPDDR5X) DRAM for use on MediaTek’s next-generation Dimensity platform.

The 10.7Gbps operation speed verification was carried out using Samsung’s LPDDR5X 16-gigabyte (GB) package on MediaTek’s upcoming flagship Dimensity 9400 System on Chip (SoC), scheduled to be released in the second half of this year. The two companies have closely collaborated to complete the verification within just three months.

Samsung’s 10.7Gbps LPDDR5X delivers more than 25% improved power consumption and performance compared to the previous generation. This allows longer battery life for mobile devices and enhanced on-device AI performance, boosting the speed of AI features, such as voice-text generation, without requiring server or cloud access.

“Through our strategic cooperation with MediaTek, Samsung has verified the industry’s fastest LPDDR5X DRAM that is poised to lead the AI smartphone market,” said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. “Samsung will continue to innovate through active collaboration with customers and provide optimum solutions for the on-device AI era.”

“Working together with Samsung Electronics has made it possible for MediaTek’s next-generation Dimensity chipset to become the world’s first to be validated at LPDDR5X operating speeds up to 10.7Gbps, enabling upcoming devices to deliver AI functionality and mobile performance at a level we’ve never seen before,” said JC Hsu, Corporate Senior Vice President at MediaTek. “This updated architecture will make it easier for developers and users to leverage more AI capabilities and take advantage of more features with less impact on battery life.”

Amid the expansion of the on-device AI market, especially for AI smartphones, energy-efficient, high-performance LPDDR DRAM solutions are becoming increasingly important. Through the validation with MediaTek, Samsung is solidifying its technological leadership in the low-power, high-performance DRAM market and is expected to expand the application beyond mobile to servers, PCs and automotive devices.

By leveraging Samsung’s leading-edge foundry and advanced packaging products, Preferred Networks aims to develop powerful AI accelerators that meet the ever-growing demand for computing power driven by generative AI.

Since starting mass production of the industry’s first 3nm process node applying Gate-All-Around (GAA) transistor architecture, Samsung has strengthened its GAA technology leadership by successfully winning orders for the 2nm process with further upgrades in performance and power efficiency.

The cooperation with Preferred Networks marks the first achievement for Japanese companies in the field of large-sized heterogeneous integrated package technologies and Samsung plans to accelerate its leading global advanced package market offensive.¹

The 2.5D Advanced Package I-Cube S technology included in the turnkey solutions, is a heterogeneous integration package technology, with multiple chips in one package to enhance inter-connection speed and reduce package size. The use of the silicon interposer (Si-interposer) is crucial in achieving ultra-fine redistribution layer (RDL) and stabilizing power integrity for optimal semiconductor performance. GAONCHIPS, a specialized system semiconductor development company, designed the chip.

“We are excited to lead in AI accelerator technology with Samsung Electronics’ 2nm GAA process. This solution will significantly support Preferred Networks’ ongoing efforts to build highly energy-efficient, high-performance computing hardware that meets the ever-growing computing demands from generative AI technologies, especially large language models.,” said Junichiro Makino, VP and Chief Technology Officer (CTO) of Computing Architecture at Preferred Networks.

“This order is pivotal as it validates Samsung’s 2nm GAA process technology and Advanced Package technology as an ideal solution for next-generation AI accelerators,” said Taejoong Song, Corporate VP and the head of Foundry Business Development Team at Samsung Electronics. “We are committed to closely collaborating with our customers ensuring that the high performance and low power characteristics of our products are fully realized.”

Preferred Networks, headquartered in Tokyo, develops advanced software and hardware technologies by vertically integrating the AI value chain from chips to supercomputers and generative AI foundation models. It provides solutions and products for various industries such as manufacturing, transportation, healthcare, entertainment and education. The company is one of the major players in the global AI market, achieving first place three times in the past five years on the Green500² list of supercomputers.

Based on this collaboration, Samsung and Preferred Networks plan to showcase groundbreaking AI chiplet solutions for the next-generation data center and generative AI computing market in the future.³

¹ Heterogeneous integration packaging technology integrates different types of chips – such as memory, logic and sensors – in a single package.
² Green500: the ranking of the TOP500 supercomputers in the world based on their performance-per-watt efficiency
³ Chiplet Solution: A technology of assembling into a single package with other different chips performing different fuctions through the packaging technologies

Samsung Electronics, a world leader in advanced semiconductor technology, today announced three new mobile image sensors designed for both main and sub cameras in smartphones: the ISOCELL HP9, the ISOCELL GNJ and the ISOCELL JN5.

As user expectations for smartphone camera quality and performance continue to rise, Samsung’s latest image sensors deliver stunning results from every angle, setting a new standard for mobile photography.

“Enhancing image sensor performance and bridging the gap between main and sub cameras to offer a consistent photography experience across all angles is the new direction of the industry,” said Jesuk Lee, Executive Vice President and CTO of the System LSI Sensor Business Team at Samsung Electronics. “We will continue to set industry standards and push technological boundaries with our new lineup of mobile sensors that integrate the latest advancements.”

ISOCELL HP9: The Industry’s First 200MP Telephoto Sensor for Smartphones

The ISOCELL HP9 features 200 million 0.56-micrometer (μm) pixels in a 1/1.4-inch optical format.

With its proprietary high-refractive microlens featuring a new material, the HP9 significantly enhances light-gathering capability by directing more light accurately to the corresponding RGB color filter. This results in more vivid color reproduction and improved focus with 12% better light sensitivity (based on signal-to-noise ratio 10) and 10% improved autofocus contrast performance compared to the previous product.

Notably, the HP9 excels in low-light conditions, addressing a common challenge for traditional telephoto cameras. Its Tetra²pixel technology merges 16 pixels (4×4) into a large, 12MP 2.24μm-sized sensor, enabling sharper portrait shots — even in dark settings — and creating dramatic out-of-focus bokeh¹ effects.

As main cameras in premium smartphones grow in size, the room for telephoto cameras is also increasing. The HP9’s large optical format makes it suitable for telephoto modules, delivering performance that matches premium main cameras in image quality, autofocus, high dynamic range (HDR) and frames per second (fps).

Powered by a remosaic algorithm, the HP9 offers 2x or 4x in-sensor zoom modes, achieving up to 12x zoom when paired with a 3x zoom telephoto module, all while maintaining crisp image quality.

ISOCELL GNJ: Integrating Cutting-Edge Pixel Technology Innovations

The ISOCELL GNJ is a dual pixel sensor with 50 million 1.0μm pixels in a 1/1.57-inch optical format.

Each pixel houses two photodiodes, enabling fast and accurate autofocus, similar to the way human eyes focus. The image sensor also simultaneously captures full color information for quick focusing with sustained image quality.

The GNJ combines dual pixel technology with an in-sensor zoom function to deliver clearer footage in video mode and higher-resolution images free from artifacts or moiré² patterns in photo mode.

The newly improved high-transmittance anti-refractive layer (ARL), coupled with Samsung’s proprietary high-refractive microlense, not only boosts light transmission and reduces unwanted reflections but also ensures that dark areas are not overly brightened for more accurate photos with well-preserved image details.

In addition, the GNJ includes an upgraded pixel isolation material in deep trench isolation (DTI) from polysilicon to silicon oxide, minimizing crosstalk between adjacent pixels. This allows the sensor to capture more detailed and precise images.

All of these innovations have been achieved with less power consumption, featuring a 29% improvement in preview mode and 34% in video mode at 4K 60fps.

ISOCELL JN5: Consistent Camera Experience From Every Angle With Broad Color Range and Excellent Autofocus

The ISOCELL JN5 features 50 million 0.64μm pixels in a 1/2.76-inch optical format.

Dual vertical transfer gate (Dual VTG) technology increases charge transfer within pixels, substantially reducing noise in extreme low light conditions for clearer image quality.

Leveraging Super Quad Phase Detection (Super QPD), the JN5 adjusts focus by comparing phase differences both vertically and horizontally, catching even the smallest details of rapidly moving objects with minimal shake.

Additionally, the JN5 incorporates dual slope gain (DSG) technology to enhance its HDR. This technology amplifies the analog light information entering the pixels into two signals, converts them into digital, and then combines them into one data, expanding the range of colors that the sensor can produce.

Implementing hardware remosaic algorithms improves camera shooting speed while enabling real-time zoom in both preview and capture modes without any delay.

The JN5’s slim optical format makes it highly versatile, allowing it to be used across main and sub cameras — including wide-angle, ultra-wide-angle, front and telephoto — promising a consistent camera experience from various angles.

¹ Bokeh refers to the blur produced in out-of-focus objects in a photo, generally to an aesthetically pleasing degree.
² The moiré effect is an undesirable visual phenomenon that occurs when repetitive details (usually lines) are photographed.

Samsung Electronics, the world leader in advanced memory technology, today announced that for the first time in the industry, it has successfully built a Compute Express Link (CXL) infrastructure certified by Red Hat, the world’s leading provider of open source solutions.

Elements that configure servers, from CXL-related products to software, can now be directly verified at the Samsung Memory Research Center (SMRC) located in Hwaseong, South Korea. Once CXL products are verified by Samsung, they can immediately be requested for product registration to Red Hat, enabling faster product development.

Marking its first achievement through the infrastructure, Samsung has successfully verified its CMM-D product for the first time in the industry this month. The company can also provide tailored solutions to customers by optimizing products at earlier development stages.

“We’re very pleased that our partnership with Red Hat is able to deliver CXL memory products with enhanced reliability to our customers,” said Taeksang Song, Vice President and Head of the New DRAM Solution Development Team at Samsung Electronics. “Through our continued collaboration spanning software and hardware, we will remain at the forefront of developing innovative memory solutions as well as the CXL ecosystem.”

Kyeong Sang Kim, Red Hat Korea GM said, “The optimization of Samsung’s hardware for Red Hat’s software underscores the value of open source technology as an imperative when it comes to expanding next-generation memory solutions such as CMM-D. We look forward to continuing our collaboration with Samsung to further extend CXL solutions to the market.”

Following the successful CXL memory verification by Red Hat for the first time in the industry last December, Samsung has also been certified for datacenter SSD products. Customers using Red Hat-certified products can build high-performance systems by receiving world-class Linux support, complementing the stable hardware operation of Samsung.

Samsung and Red Hat have also been working closely together in various areas, including product certification for both hardware and software, enriching the next-generation CXL ecosystem.

At the Red Hat Summit held in Denver, Colorado, in May, Samsung demonstrated its CMM-D¹ embedded in Red Hat Enterprise Linux 9.3, which enhances the performance of Deep Learning Recommendation Models (DLRM).

The demo utilized the Scalable Memory Development Kit’s (SMDK) Memory Interleaving software technology, highlighting improved memory access performance. SMDK-equipped CMM-D allows customers to build high-performance AI models, without having to make significant investments, by accelerating the data processing, AI learning and inferencing speeds.

Through their strong partnership, Samsung and Red Hat aim to provide customer solutions suitable for a wide range of user systems while introducing new technology standards to an array of partners and customers and expanding the CXL memory ecosystem.

¹ CMM-D is Samsung’s CXL Memory Module DRAM, a DRAM solution based on the PCIe interface that supports the CXL protocol.

Samsung Electronics, a world leader in advanced semiconductor technology, today unveiled its latest foundry innovations and outlined its vision for the AI era during Samsung Foundry Forum (SFF) U.S., an annual event held at the company’s Device Solutions America headquarters in San Jose, California.

Under the theme “Empowering the AI Revolution,” Samsung announced its reinforced process technology roadmap, including two new cutting-edge nodes — SF2Z and SF4U — as well as its integrated Samsung AI Solutions platform harnessing the unique strengths of its Foundry, Memory and Advanced Package (AVP) businesses.

“At a time when numerous technologies are evolving around AI, the key to its implementation lies in high-performance, low-power semiconductors,” said Dr. Siyoung Choi, President and Head of Foundry Business at Samsung Electronics. “Alongside our proven GAA process optimized for AI chips, we plan to introduce integrated, co-packaged optics (CPO) technology for high-speed, low-power data processing, providing our customers with the one-stop AI solutions they need to thrive in this transformative era.”

The event featured presentations from distinguished industry thought leaders such as Arm CEO Rene Haas and Groq CEO Jonathan Ross, who took the stage to emphasize the robust partnerships with Samsung in tackling new AI challenges. Around 30 partner companies exhibited at booths, further highlighting the dynamic collaboration across the U.S. foundry ecosystem.

Empowering Customer AI Solutions With State-of-the-Art Process Technology Roadmap

Samsung announced two new process nodes, SF2Z and SF4U, reinforcing its leading-edge process technology roadmap.

The company’s latest 2nm process, SF2Z, incorporates optimized backside power delivery network (BSPDN) technology, which places power rails on the backside of the wafer to eliminate bottlenecks between the power and signal lines. Applying BSPDN technology to SF2Z not only enhances power, performance and area (PPA) compared to SF2, the first-generation 2nm node, but also significantly reduces voltage drop (IR drop), enhancing the performance of HPC designs. Mass production of SF2Z is slated for 2027.

SF4U, on the other hand, is a high-value 4nm variant that offers PPA improvements by incorporating optical shrink, with mass production scheduled for 2025.

Samsung reaffirmed that its preparations for SF1.4 (1.4nm) are progressing smoothly, with performance and yield targets on track for mass production in 2027. Emphasizing its ongoing commitment to advancing beyond Moore, Samsung is actively shaping future process technologies below 1.4nm through material and structural innovations.

Continuously Advancing GAA Maturity

With the onset of the AI era, structural advancements like gate-all-around (GAA) have become imperative to meet power and performance demands. At SFF, Samsung emphasized the maturity of its GAA technology, a key technological enabler in empowering AI.

Entering its third year of mass production, Samsung’s GAA process is consistently demonstrating continuous maturity in both yield and performance. Leveraging this accumulated GAA production experience, Samsung plans to mass produce its second-generation 3nm process (SF3) in the second half of this year and deliver GAA on its upcoming 2nm process.

Samsung’s GAA production has been steadily increasing since 2022 and is poised to substantially expand in the coming years.

Highlighting Cross-Company Collaborations for Turnkey Samsung AI Solutions

Another highlight was the unveiling of Samsung AI Solutions, a turnkey AI platform resulting from collaborative efforts across the company’s Foundry, Memory and AVP businesses.

Integrating the unique strengths of each business, Samsung is offering high-performance, low-power and high-bandwidth solutions that can be tailored to suit specific customer AI requirements.

Cross-company collaboration also streamlines supply chain management (SCM) and reduces time to market, enabling a remarkable 20% improvement in total turnaround time (TAT).

Samsung plans to introduce an all-in-one, CPO-integrated AI solution in 2027, aiming to provide customers with one-stop AI solutions.

Diversifying Customers and Applications for a Balanced Portfolio Across AI to Mainstream Tech

Samsung is also making significant strides in diversifying its customer base and application areas.

Over the past year, close customer collaborations have led to an increase in Samsung Foundry’s AI sales by 80%, reflecting its dedication to meeting evolving market demands.

In addition to its leading-edge process nodes, Samsung offers specialty and 8-inch wafer derivatives with continued PPA improvements and strong cost competitiveness. With this balanced technology portfolio, the company is catering to customer needs across automotive, medical, wearable and IoT applications.

Converging AI and Technology to Advance the Foundry Ecosystem Toward Collective Growth

Building on the momentum of the SFF event, Samsung will also be hosting its annual Samsung Advanced Foundry Ecosystem (SAFE) Forum on June 13. Themed “AI: Exploring Possibilities and Future,” the forum will serve as a collaborative platform for ecosystem partners to discuss customizable technologies and solutions tailored for AI.

At this year’s forum, Siemens CEO Mike Ellow, AMD Vice President Bill En and Celestial AI CEO David Lazovsky are among the industry leaders who will present insightful perspectives on the future of chip and system design technologies.

The forum will also feature the inaugural Multi-Die Integration (MDI) Alliance workshop, following the launch of the MDI Alliance last year. Samsung will engage in extensive discussions with its alliance partners on mutual growth opportunities and specific collaborative initiatives, with a focus on 2.5D and 3D IC designs for comprehensive solutions development. These activities will further strengthen partnerships and foster a collective vision.

“We are excited to deliver the industry’s first 9th-gen V-NAND which will bring future applications leaps forward. In order to address the evolving needs for NAND flash solutions, Samsung has pushed the boundaries in cell architecture and operational scheme for our next-generation product,” said SungHoi Hur, Head of Flash Product & Technology of the Memory Business at Samsung Electronics. “Through our latest V-NAND, Samsung will continue to set the trend for the high-performance, high-density solid-state drive (SSD) market that meets the needs for the coming AI generation.”

With the industry’s smallest cell size and thinnest mold, Samsung improved the bit density of the 9th-generation V-NAND by about 50% compared to the 8th-generation V-NAND. New innovations such as cell interference avoidance and cell life extension have been applied to enhance product quality and reliability, while eliminating dummy channel holes has significantly reduced the planar area of the memory cells.

In addition, Samsung’s advanced “channel hole etching” technology showcases the company’s leadership in process capabilities. This technology creates electron pathways by stacking mold layers and maximizes fabrication productivity as it enables simultaneous drilling of the industry’s highest cell layer count in a double-stack structure. As the number of cell layers increase, the ability to pierce through higher cell numbers becomes essential, demanding more sophisticated etching techniques.

The 9th-generation V-NAND is equipped with the next-generation NAND flash interface, “Toggle 5.1,” which supports increased data input/output speeds by 33% to up to 3.2 gigabits-per-second (Gbps). Along with this new interface, Samsung plans to solidify its position within the high-performance SSD market by expanding support for PCIe 5.0.

Power consumption has also been improved by 10% with advancements in low-power design, compared to the previous generation. As reducing energy usage and carbon emissions becomes vital for customers, Samsung’s 9th-generation V-NAND is expected to be an optimal solution for future applications.

Samsung has started mass production for the 1Tb TLC 9th-generation V-NAND this month, followed by the quad-level cell (QLC) model in the second half of this year.

Samsung Electronics, a world leader in advanced memory technology, today announced that it has developed the industry’s first LPDDR5X DRAM supporting the industry’s highest performance of up to 10.7 gigabits-per-second (Gbps).

Leveraging 12 nanometer (nm)-class process technology, Samsung has achieved the smallest chip size among existing LPDDRs, solidifying its technological leadership in the low-power DRAM market.

“As demand for low-power, high-performance memory increases, LPDDR DRAM is expected to expand its applications from mainly mobile to other areas that traditionally require higher performance and reliability such as PCs, accelerators, servers and automobiles,” said YongCheol Bae, Executive Vice President of Memory Product Planning of the Memory Business at Samsung Electronics. “Samsung will continue to innovate and deliver optimized products for the upcoming on-device AI era through close collaboration with customers.”

With the surge in AI applications, on-device AI, which enables direct processing on devices, is becoming increasingly crucial, underscoring the need for low-power, high-performance LPDDR memory.

Samsung’s 10.7Gbps LPDDR5X not only improves performance by more than 25% and capacity by more than 30%, compared to the previous generation, but also expands the single package capacity of mobile DRAM up to 32-gigabytes (GB), making it an optimal solution for the on-device AI era that requires high-performance, high-capacity and low-power memory.

In particular, the LPDDR5X incorporates specialized power-saving technologies such as optimized power variation that adjusts power according to workload and expanded low-power mode intervals which extend energy-saving periods. These improvements enhance power efficiency by 25% over the previous generation, enabling mobile devices to provide longer battery life and allowing servers to minimize total cost of ownership (TCO) by lowering energy usage when processing data.

Mass production of the 10.7Gbps LPDDR5X is scheduled to begin by the second half of the year, following verification with mobile application processor (AP) and mobile device providers.

“With our two new microSD cards, Samsung has provided effective solutions to address the growing demands of mobile computing and on-device AI,” said Hangu Sohn, Vice President of the Memory Brand Product Biz Team at Samsung Electronics. “Despite their tiny size, these memory cards deliver powerful SSD-like performance and capacity to help users get more out of demanding modern and future applications.”

Industry-First SD Express microSD Card Offers Maximum Speeds of 800 MB/s

For the first time in the industry, Samsung introduced a new high-performance microSD card based on the SD Express interface. The development was the result of a successful collaboration with a customer to create a custom product.

Thanks to its low-power design as well as firmware technology optimized for high-performance and thermal management, Samsung’s SD Express microSD card offers performance equivalent to SSDs in a small form factor. While read speeds for traditional microSD cards based on the UHS-1 interface were limited to 104MB/s, SD Express was able to boost it to 985MB/s, although commercial availability of the latter were not viable in microSD cards until now.

The sequential read speed of Samsung’s SD Express microSD card reaches up to 800MB/s — 1.4 times faster than SATA SSDs (up to 560 MB/s) and more than four times faster compared to traditional UHS-1 memory cards (up to 200 MB/s), allowing improved computing experiences in various applications, including PCs and mobile devices. To ensure stable performance and reliability for the small form factor, Dynamic Thermal Guard (DTG) technology maintains the optimum temperature for the SD Express microSD card, even during long usage sessions.

1TB UHS-1 microSD Card With Cutting-Edge 1Tb V-NAND

Samsung’s new 1TB microSD card stacks eight layers of the company’s 8th generation 1-terabit (Tb) V-NAND within a microSD form factor, realizing the high-capacity package that used to be possible only in SSDs. The new 1TB microSD card passes the industry’s most rigorous test settings and offers reliable usage even in challenging environments, with features such as water protection, extreme temperature, drop-proof design, wear-out protection, as well as X-ray and magnetic protection.⁴

Availability

The 256GB SD Express microSD card will be made available for purchase later this year, and the 1TB UHS-1 microSD card is set to launch within the third quarter of this year.

¹ 1 gigabyte (GB) = 1,000,000,000 bytes (1 billion bytes). Actual usable capacity may vary.
² SD Express: The new SD card interface with PCIe Gen3x1 (based on SD 7.1 specification released in Feb. 2019), the theoretical transfer speed of an SD Express card is 985MB/s
³ 1 terabyte (TB) = 1,000,000,000,000 bytes (1 trillion bytes). Actual usable capacity may vary
⁴ Samsung is not liable for any damages and/or loss of data or expenses incurred from memory card data recovery. The six proofs claimed is only applicable for 1TB UHS­-1 microSD Card, not for 256GB SD Express microSD Card. 1M depth, salt water, 72hrs. Operating temperatures of -25℃ to 85℃ (-13°F to 185°F), non-operating temperatures of -40℃ to 85℃ (-40°F to 185°F). Withstands standard airport x-ray machines (Up to 100mGy). Magnetic field equivalent of a high-field MRI scanner (Up to 15,000 gauss). Withstand drops up to 5meters (16.4feet). Up to 10,000 swipes.

Samsung Electronics, a world leader in advanced memory technology, today announced that it has developed HBM3E 12H, the industry’s first 12-stack HBM3E DRAM and the highest-capacity HBM product to date.

Samsung’s HBM3E 12H provides an all-time high bandwidth of up to 1,280 gigabytes per second (GB/s) and an industry-leading capacity of 36 gigabytes (GB). In comparison to the 8-stack HBM3 8H, both aspects have improved by more than 50%.

“The industry’s AI service providers are increasingly requiring HBM with higher capacity, and our new HBM3E 12H product has been designed to answer that need,” said Yongcheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. “This new memory solution forms part of our drive toward developing core technologies for high-stack HBM and providing technological leadership for the high-capacity HBM market in the AI era.”

The HBM3E 12H applies advanced thermal compression non-conductive film (TC NCF), allowing the 12-layer products to have the same height specification as 8-layer ones to meet current HBM package requirements. The technology is anticipated to have added benefits especially with higher stacks as the industry seeks to mitigate chip die warping that come with thinner die. Samsung has continued to lower the thickness of its NCF material and achieved the industry’s smallest gap between chips at seven micrometers (µm), while also eliminating voids between layers. These efforts result in enhanced vertical density by over 20% compared to its HBM3 8H product.

Samsung’s advanced TC NCF also improves thermal properties of the HBM by enabling the use of bumps in various sizes between the chips. During the chip bonding process, smaller bumps are used in areas for signaling and larger ones are placed in spots that require heat dissipation. This method also helps with higher product yield.

As AI applications grow exponentially, the HBM3E 12H is expected to be an optimal solution for future systems that require more memory. Its higher performance and capacity will especially allow customers to manage their resources more flexibly and reduce total cost of ownership (TCO) for datacenters. When used in AI applications, it is estimated that, in comparison to adopting HBM3 8H, the average speed for AI training can be increased by 34% while the number of simultaneous users of inference services can be expanded more than 11.5 times.¹

Samsung has begun sampling its HBM3E 12H to customers and mass production is slated for the first half of this year.

¹ Based on internal simulation results

This collaboration sets the stage for a series of announcements and planned innovation between Samsung and Arm. The companies have bold plans to reinvent 2-nanometer (nm) GAA for next-generation data center and infrastructure custom silicon, as well as a groundbreaking AI chiplet solution that will revolutionize the future generative artificial intelligence (AI) mobile computing market.

“As we continue into the Gen AI era, we are excited to extend our partnership with Arm to deliver the next generation Cortex-X CPU, enabling our mutual customers to create innovative products,” said Jongwook Kye, Executive Vice President and Head of Foundry Design Platform Development at Samsung Electronics. “Both Samsung and Arm have built a solid foundation from many years of collaboration. This unprecedented level of deep design technology co-optimization has resulted in a groundbreaking accomplishment, providing access to the newest Cortex-CPU on the latest GAA process node.”

“Our longstanding collaboration with Samsung has delivered multi-generation, leading-edge innovation,” said Chris Bergey, SVP and GM, Client Business at Arm Inc. “Optimizing Cortex-X and Cortex-A processors on the latest Samsung process node underscores our shared vision to redefine what’s possible in mobile computing, and we look forward to continuing to push boundaries to meet the relentless performance and efficiency demands of the AI era.”

Samsung announced its initial production of 3nm Multi-Bridge-Channel FET (MBCFET), based on Samsung’s GAA technology in 2022. GAA technology allows further device scaling beyond the FinFET generation, improving power efficiency with reduced supply voltage level and enhanced performance with higher drive current capability. The GAA implementation approach with nanosheets structure delivers maximum design flexibility and scalability.

Designed with Samsung’s next generation GAA process node, Arm delivered the optimized newest Cortex-X CPU with additional performance and efficiency improvements to take the user experience to the next level.

With continuous pressure to have products delivered on time, it is paramount to ensure first-time-right silicon with the most competitive power, performance and area (PPA) attributes. Design and manufacturing can no longer be optimized separately. From the very beginning, both the Samsung and Arm teams embraced design-technology co-optimization (DTCO), which has been a critical factor to maximize the PPA benefits for both the next generation Cortex-X CPU design architecture and GAA process technology.

Generative AI is a key growth driver for a new wave of products that offer a superior user experience. Through this collaboration, Samsung and Arm are accelerating access to the optimized implementation of the next generation Cortex-X CPU on Samsung’s latest GAA process technology, enabling the next generation of product innovations with industry-leading performance.

Samsung Electronics, a world leader in advanced memory technology, today announced the release of SSD 990 EVO — the newest addition to the company’s lineup of consumer SSDs — which delivers powerful performance with better energy efficiency. Designed to enhance everyday computing experiences like gaming, work and video/photo editing, the NVMe SSD is expected to be an ideal solution for a diverse range of users.

“Samsung has been leveraging its advanced memory technologies for optimized SSD solutions, and for our latest consumer product, we’ve combined both innovation and practicality to enhance the computing experiences for users,” said Hangu Sohn, Vice President of Memory Brand Product Biz Team at Samsung Electronics. “The 990 EVO balances performance, power efficiency and reliability, making it a versatile choice for the latest interface that is suitable for a variety of everyday tasks, including gaming, business workflow and creative endeavors.”

Enhanced Performance

The 990 EVO offers enhanced performance of up to 43% compared to the previous model, 970 EVO Plus. Sequential read speeds come up to 5,000 megabytes-per-second (MB/s) and write speeds up to 4,200 MB/s. Random read and write speeds also get a boost with up to 700K input/output operations per second (IOPS) and 800K IOPS, respectively.

By using Host Memory Buffer (HMB) technology to directly link to the host processor’s DRAM, the SSD can achieve optimized performance even with a DRAM-less design. Users upgrading from previous mainstream SSDs will experience significantly faster loading speeds for games and swift access to large files.

Improved Power Efficiency and Smart Thermal Solution

The Samsung 990 EVO improved power efficiency of up to 70% when compared to the 970 EVO Plus, allowing users extended usage on PCs without the constant concern for battery life. It also supports Modern Standby,¹ which enables an instant on/off function with uninterrupted internet connectivity and seamless notification reception, even in low-power states.

The 990 EVO’s heat spreader label effectively regulates the thermal condition of the NAND chip, allowing operations to consistently run at their highest levels without compromising drive integrity.

A Versatile SSD for Current and Future Computing

The 990 EVO is a versatile SSD created to meet current computing needs and in anticipation of future requirements. Users can experience seamless multitasking with a single SSD that caters to the demands of everyday such as gaming, business and creative workflow.

Supporting both PCIe 4.0 x4 and PCIe 5.0 x2 interfaces, the 990 EVO fits the needs for today’s PCs supporting PCIe 4.0 M.2 slots while it also offers compatibility along with thermal control and power savings for PCIe 5.0 interfaces in upcoming applications.

The 990 EVO comes in 1 terabyte (TB) and 2TB capacity options.

Samsung Magician Software Support

Samsung Magician software presents a suite of optimization tools for enhanced functionality for all Samsung SSDs, including the 990 EVO. Users can streamline the data migration process for SSD upgrades effortlessly and securely. In addition, Samsung Magician protects valuable data, monitors drive health and notifies timely firmware updates.

Currently available to consumers worldwide, the manufacturer’s suggested retail price (MSRP) for 990 EVO is $124.99 for the 1TB model and $209.99 for the 2TB model. For more information — including warranty details — please visit samsung.com/SSD or semiconductor.samsung.com/internal-ssd/.

Samsung SSD 990 EVO Specifications

¹ For detailed information about Modern Standby, please visit the Microsoft website (https://learn.microsoft.com/en-us/windows-hardware/design/device-experiences/part-selection#ssd-storage).
² The NVM Express® design mark is a registered trademark of NVM Express, Inc.
³ 1GB = 1,000,000,000 bytes by IDEMA. A certain portion of capacity may be used for system file and maintenance use, so the actual capacity may differ from what is indicated on the product label.
^4,5 Sequential and random performance measurements are based on IOmeter1.1.0. Performance may vary based on an SSD’s firmware version, system hardware & configuration.
Test system configuration: AMD Ryzen9 7950x 16-Core Processor CPU@4.5GHz, DDR5 4800MHz 16GBx2 (PC5-38400), OS-Windows 11 Pro 64bit, Chipset – ASRock X670E Taichi
⁶ Samsung Electronics shall not be liable for any loss, including but not limited to loss of data or other information contained on Samsung Electronics’ products or loss of profit or revenue which may be incurred by the user. For more information on the warranty, please visit samsung.com/SSD or semiconductor.samsung.com/internal-ssd/
⁷ Five years or total bytes written (TBW), whichever comes first. For more information on the warranty, please refer to the enclosed warranty document in the package.

Samsung Electronics, a world leader in advanced memory technology, today announced that for the first time in the industry, it has successfully verified Compute Express Link (CXL) memory operations in a real user environment with open-source software provider Red Hat, leading the expansion of its CXL ecosystem.

Due to the exponential growth of data throughput and memory requirements for emerging fields like generative AI, autonomous driving and in-memory databases (IMDBs), the demand for systems with greater memory bandwidth and capacity is also increasing. CXL is a unified interface standard that connects various processors, such as CPUs, GPUs and memory devices through a PCIe® interface that can serve as a solution for limitations in existing systems in terms of speed, latency and expandability.

“Samsung has been working closely with a wide range of industry partners in areas from software, data centers and servers to chipset providers, and has been at the forefront of building up the CXL memory ecosystem,” said Yongcheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. “Our CXL partnership with Red Hat is an exemplary case of collaboration between advanced software and hardware, which will enrich and accelerate the CXL ecosystem as a whole.”

In this latest development, Samsung has optimized its CXL memory for Red Hat Enterprise Linux® (RHEL) 9.3 and verified memory recognition, read and write operations in Red Hat’s KVM and Podman environments. This allows data center clients to easily use Samsung’s CXL memory without having to make additional adjustments to their existing hardware.

“The successful verification of Samsung’s CXL Memory Expander interoperability with Red Hat Enterprise Linux is significant because it opens up the applicability of the CXL Memory Expander to IaaS¹ and PaaS²-based software provided by Red Hat,” said Marjet Andriesse, Senior Vice President and Head of Red Hat Asia Pacific. “This is an important milestone in the integration of hardware and software to build an open-source ecosystem for next-generation memory development.”

Samsung and Red Hat are currently working together on a “RHEL 9.3 CXL Memory Enabling Guide” to help users utilize Samsung’s CXL memory on RHEL 9.3 and build high-performance computing systems in various user environments.

The two companies first signed a memorandum of understanding (MOU) in May 2022 to collaborate on next-generation memory and will continue their efforts through the Samsung Memory Research Center (SMRC) in developing CXL open-source and reference models. The ongoing partnership covers a range of storage and memory products, including NVMe SSDs, CXL Memory, computational memory/storage and fabrics.

¹ Infrastructure as a Service.
² Platform as a Service.

“Engineered with state-of-the-art sensor technologies, Samsung’s ISOCELL Vizion 63D and ISOCELL Vizion 931 will be essential in facilitating machine vision for future high-tech applications like robotics and extended reality (XR),” said Haechang Lee, Executive Vice President of the Next Generation Sensor Development Team at Samsung Electronics. “Leveraging our rich history in technological innovation, we are committed to driving the rapidly expanding image sensor market forward.”

ISOCELL Vizion 63D: Tailored for Capturing High-Resolution 3D Images With Exceptional Detail

Similar to how bats use echolocation to navigate in the dark, ToF sensors measure distance and depth by calculating the time it takes the emitted light to travel to and from an object.

Particularly, Samsung’s ISOCELL Vizion 63D is an indirect ToF (iToF) sensor that measures the phase shift between emitted and reflected light to sense its surroundings in three dimensions. With exceptional accuracy and clarity, the Vizion 63D is ideal for service and industrial robots as well as XR devices and facial authentication where high-resolution and precise depth measuring are crucial.

The ISOCELL Vizion 63D is the industry’s first iToF sensor with an integrated depth-sensing hardware image signal processor (ISP). With this innovative one-chip design, it can precisely capture 3D depth information without the help of another chip, enabling up to a 40% reduction in system power consumption compared to the previous ISOCELL Vizion 33D product. The sensor can also process images at up to 60 frames per second in QVGA resolution (320×240), which is a high-demand display resolution used in commercial and industrial markets.

Based on the industry’s smallest 3.5㎛ pixel size in iToF sensors, the ISOCELL Vizion 63D achieves high Video Graphics Array (VGA) resolution (640×480) within a 1/6.4” optical format, making it an ideal fit for compact, on-the-go devices.

Thanks to backside scattering technology (BST) that enhances light absorption, the Vizion 63D sensor boasts the highest level of quantum efficiency in the industry, reaching 38% at an infrared light wavelength of 940 nanometers (nm). This enables enhanced light sensitivity and reduced noise, resulting in sharper image quality with minimal motion blur.

Moreover, the ISOCELL Vizion 63D supports both flood (high-resolution at short-range) and spot (long-range) lighting modes, significantly extending its measurable distance range from its predecessor’s five meters to 10.

ISOCELL Vizion 931: Optimized for Capturing Dynamic Movements Without Distortion

The ISOCELL Vizion 931 is a global shutter image sensor tailored for capturing rapid movements without the “jello effect”. Unlike rolling shutter sensors that scan the scene line by line from top to bottom in a “rolling” manner, global shutter sensors capture the entire scene at once or “globally,” similar to how human eyes see. This allows the ISOCELL Vizion 931 to capture sharp, undistorted images of moving objects, making it well-suited for motion-tracking in XR devices, gaming systems, service and logistics robots as well as drones.

Designed in a one-to-one ratio VGA resolution (640 x 640) that packs more pixels in a smaller form factor, the ISOCELL Vizion 931 is optimal for iris recognition, eye tracking as well as facial and gesture detection in head-mounted display devices like XR headsets.

The ISOCELL Vizion 931 also achieves the industry’s highest level of quantum efficiency, delivering an impressive 60% at 850nm infrared light wavelength. This feat was made possible by incorporating Front Deep Trench Isolation (FDTI) which places an insulation layer between pixels to maximize light absorption, in addition to the BST method used in the ISOCELL Vizion 63D.

The Vizion 931 supports multi-drop that can seamlessly connect up to four cameras to the application processor using a single wire. With minimal wiring required, the sensor provides greater design flexibility for device manufactures.

Samsung ISOCELL Vizion 63D and ISOCELL Vizion 931 sensors are currently sampling to OEMs worldwide.

“For consumers who are looking for substitutes for traditional hard disk drives (HDDs), the T5 EVO — offering the largest-available capacity along with speed and durability in a compact design that fits in the palm of your hand — is an innovative, new external storage option,” said Hangu Sohn, Vice President of the Memory Brand Product Biz Team at Samsung Electronics. “The T5 EVO is built to fulfill the needs of a wide range of consumers with diverse lifestyles. Its capacity of up to 8TB, fast speeds, compact design and data protection from external shocks are well-suited for users who want to store and access data anywhere, anytime.”

Based on USB 3.2 Gen 1, the T5 EVO transfers data up to 3.8 times faster than external HDDs and delivers maximum performance through sequential read and write speeds of up to 460 megabytes per second (MB/s), making it easier to transfer large files.

Enhanced Portability and Ergonomic Design

The design concept of T5 EVO is “Compact and Light Ergonomic.” The portable SSD is engineered to provide a new experience with an ergonomic design that deviates from the size of a business card for the first time while still maintaining compact and light features. It measures 95mm in width, 40mm in length and 17mm in thickness, meaning consumers can have an 8TB portable storage device that is small enough to hold in one hand. This combination of compact size and large memory provides users with faster speeds, equivalent capacity and a smaller, lighter body — when compared to an external HDD. At 102 grams, the carefully designed weight of the product creates a sense of trust in its sturdiness as well.

The T5 EVO also has a black body and a titan gray ring, giving it a premium and sleek feeling with similar colors, and blends in naturally when placed with other host devices that are gray in color. The T5 EVO can be easily fastened to any bag or piece of luggage thanks to its metal ring design. Furthermore, its metal body and rubberized surface provide extra protection against external shocks — including from drops of up to two meters.

Store Millions of Photos and Songs With Speed and Ease

Even with its convenient design, the T5 EVO does not compromise capacity. With storage capabilities of up to 8TB of data, the T5 EVO can accommodate large files, high-resolution videos, photos and games, making it suitable for work and play. An 8TB T5 EVO can store more than 2 million 3.5-megabyte (MB) photos, 1.8 million 4MB music files, or 3,500 2-gigabyte (GB) videos.

Prioritizes Safety Through Thermal Guard Protection

The new Portable SSD prioritizes safety through thermal guard technology and security with hardware data encryption. Samsung’s Dynamic Thermal Guard technology safeguards against overheating and maintains optimal operating temperatures, in compliance with international safety standard IEC 62368-1. Moreover, the portable SSD supports Advanced Encryption Standard (AES) 256-bit hardware data encryption, giving users assurance and confidence when storing data.

Extensive Compatibility for a Wide Range of Users

The T5 EVO is compatible with a range of operating systems and host devices, such as macOS^®, Windows^®, smartphones/tablets, and gaming consoles. The T5 EVO also features Samsung Magician software, which provides a comprehensive set of drive management features, including real-time drive health check, genuine authentication check feature, performance benchmark and firmware updates.

The T5 EVO — available in 2TB, 4TB and 8TB sizes — comes with a USB Type-C-to-C cable and includes a three-year limited warranty. The manufacturer’s suggested retail prices (MSRP) are $189.99 for the 2TB, $349.99 for the 4TB and $649.99 for the 8TB. The T5 EVO is available worldwide starting today. For more information, visit https://samsung.com/portable-ssd.

Samsung Portable SSD T5 EVO Product Specifications
Interface	USB 3.2 Gen 1 (5Gbps)
Hardware Information	Capacities1		2TB	4TB	8TB
	Dimensions2		40 x 95 x 17mm
	Weight2		102 grams
Performance	Sequential Read3		Up to 460 MB/sec
	Sequential Write3		Up to 460 MB/sec
Durability	Drop Resistant4		Up to 2m
Security	Encryption		AES 256-bit hardware encryption
	Software5		Samsung Magician Software
Compatibility	Operating System6		Windows®, macOS®, Android
	Device6		PCs, Laptops, Tablets, Smartphones
Reliability	Temperature7	Operating	0°C to 60°C
		Non-Operating	-40°C to 85°C
	Humidity		5% to 95% non-condensing
	Shock	Non-Operating	1,500G, duration: 0.5ms, 3 axis
	Vibration	Non-Operating	20~2,000Hz, 20G
Certifications			CE, BSMI, KC, VCCI, RCM, FCC, IC, UL, TUV, CB, EAC, UKCA, BIS
RoHS Compliance			RoHS 2
Warranty8			Three (3) Year Limited Warranty

¹ 1GB=1,000,000,000 bytes, 1TB=1,000,000,000,000 bytes. Lower capacity may be demonstrated by your computer due to use of a different measurement standard.
² The actual product weight and size may vary depending on the product’s capacity and measurement method.
³ Max data transfer speed is measured based on Samsung’s internal testing standards with the enclosed cable. Performance may vary depending on host configuration, cable and user system environment.
⁴ Based on an internal free fall shock test conducted under controlled conditions. Drop resistance may vary depending on the actual environmental conditions. Damage caused by drop is not covered under warranty.
* Test condition: Device was dropped free-fall to a metal plate from 2-meter height.
** No warranty is provided for any physical damage to the product including bending or deformation of the ring.
⁵ Samsung Magician software is available in Windows^®, macOS^® and Android. It requires Windows^® 7 and higher, macOS^® High Sierra (10.13.6) and higher, or Android 5.1 (Lollipop) and higher. Older versions of the Windows^®, macOS^®, and Android operating systems may not be supported.
⁶ Compatibility with host devices may vary. Some operating systems may require T5 EVO reformatting. T5 EVO is backward compatible with USB 3.1, USB 3.0 and USB 2.0
⁷ Tc is measured at the hottest point on the case. Sufficient airflow is recommended to be operated properly on heavier workload within device operating temperature.
⁸ For more information on the warranty, please visit https://semiconductor.samsung.com/consumer-storage/support/warranty

Samsung Electronics today opened the Samsung AI Forum, at which it shared the latest research achievements in artificial intelligence (AI) and computer engineering (CE), contributing to enhancing the company’s next-generation semiconductor technology.

With over 1,000 attendees — including leading academics, industry experts, researchers and students — day 1 of the seventh iteration of the Samsung AI Forum took place at the Suwon Convention Center in Gyeonggi-do, Korea, under the theme of “large-scale AI for a better tomorrow.” A two-day forum, the first day was hosted by the Samsung Advanced Institute of Technology (SAIT), and day 2 will be hosted on November 8 by Samsung Research at the Samsung R&D campus in Seoul, Korea.

Kye Hyun Kyung, President and CEO of Samsung Electronics’ Device Solutions (DS) Division, said in his opening remarks, “The spotlight has recently shifted toward Generative AI technology, as it provides us the potential to unlock new solutions and address long-standing challenges. But the need for in-depth research on the safety, trustworthiness and sustainability of AI is increasing at the same time.” About the event, Kyung added, “We expect this forum — where top global experts have gathered — will be a platform to discuss ways to create a brighter future through AI and semiconductor technologies.”

Safe Direction for AI Research Suggested; Future of LLM-Based Semiconductors Shared

▲ SAIF 2023 keynote speakers: (from left) Yoshua Bengio, professor at University of Montreal, Kye Hyun Kyung President and CEO of Samsung Electronics, Jim Keller, CEO of Tenstorrent

Yoshua Bengio, expert in deep learning technology and professor at the University of Montreal, shared his latest research in a keynote presentation titled, “Towards a Safe AI Scientist System.” He introduced a safe AI machine learning algorithm that can prevent large language models (LLMs) from developing in directions not intended by developers.

Jim Keller, CEO of AI semiconductor startup Tenstorrent, introduced the open instruction set architecture (ISA) RISC-V during his session titled, “Own Your Silicon,” and emphasized that RISC-V will create new possibilities in next-generation AI through innovation in hardware structure design.

Overall, day 1 of Samsung AI Forum 2023 addressed two key topics: LLMs and the Transformation of AI for Industry, and Large-scale Computing for LLMs and Simulation. The topics covered AI and CE, respectively.

With SAIT serving as the company’s R&D hub and incubator for cutting-edge technologies, SAIT researchers shared their visions on how the future of semiconductor development and manufacturing will change by integrating AI into all areas of semiconductors, and explored the possibilities of future computing in semiconductor processing, including large simulation accelerated by machine learning.

Accolades Presented to Exceptional Researchers and Students

During the forum, Samsung also hosted a ceremony to announce the winners of the Samsung AI Researcher Award and the Samsung AI/CE Challenge. The intent of these accolades is to honor up-and-coming researchers, university students and graduates who are excelling domestically.

Samsung AI Researcher of the Year awards were presented to five AI researchers: Professor Connor Coley at Massachusetts Institute of Technology, Professor Jason Lee at Princeton University, Professor Emma Pierson at Cornell University, Professor Xiang Ren at University of Southern California, Professor Virginia Smith at Carnegie Mellon University.

Among the honorees Professor Lee is focusing on theoretical and applied research including deep learning, reinforcement learning and optimization. In particular, his work was highly praised for its contribution to the development of AI research around the world through the publication of several outstanding papers on optimization.

The honor of winning the Samsung AI/CE Challenge, with submissions from 1,481 students comprising 410 teams, went to 16 teams.

Ph.D. student Keondo Park from the Seoul National University Graduate School of Data Science, a member of the grand-prize winning team, said, “In the course of implementing our AI project directly, we were able to explore deeply about possible problems. The AI/CE challenge was a good opportunity to broaden our horizons on research.”

Furthermore, SAIT presented a poster of leading research papers as well as exhibitions of research projects in AI and CE. It also prepared networking programs for attendees to engage in the vital AI and CE ecosystems.

The official video for Samsung AI Forum 2023 will be available on the Samsung Electronics YouTube Channel (https://www.youtube.com/@Samsung) from November 16th.

Zoom in and Track on Any Subject, No Matter the Location

Samsung’s latest video feature, ISOCELL Zoom Anyplace, gives users more freedom and creativity while filming with their smartphones. With the new solution for 200MP image sensors, users can select the desired subject and the camera will automatically track and film it. Until now, users have had to focus on a moving subject when shooting a video themselves. But with ISOCELL Zoom Anyplace and Qualcomm AI engine, the camera quickly finds a moving subject and tracks and follows it, ensuring that it is not missed during filming. Even fast-moving subjects are prevented from going off-screen. Additionally, videos can be shot with less screen shake.

This feature applies to zoomed-in areas with high resolution, as well, thanks to real-time remosaic¹ capabilities. ISOCELL Zoom Anyplace takes charge of tasks involved in tracking moving subjects while shooting video, and users can simply enjoy the scene in front of them with their own eyes.

Previously, if users took a full-screen video and zoomed in on a subject later, the zoomed-in section suffered from poor video quality. Now, ISOCELL Zoom Anyplace allows users to simultaneously capture the full field of view and zoomed-in areas on video. Not only that, but both the full-screen and zoomed-in views can be filmed at the same time while maintaining high resolution.

This ability to take full-screen and close-up shots at the same time unlocks creative potential by providing the versatility to record one scene in many ways. As a result, creators can film from more angles, and they can do so more freely and dynamically. Even if the chosen subject is on the edge of the screen, users can zoom in on it without modifying the angle of their full-scope filming. In other words, users can zoom just about however they like. If they want to start a shot zoomed in on a subject and then zoom out, they can. If they want to do the inverse, they can do that, as well. Functions allow for a broader range of artistic choices to be made while filming, which enhances the overall user experience.

Thanks to in-sensor zoom by Tetra²pixel, users don’t need to be selective because of zoom limitations, either. Previously, with digital zoom, if the center region of interest (ROI) area was zoomed in 4x at a 12.5MP sum mode, it theoretically resulted in 0.78MP (12.5MP/16) image resolution. With in-sensor zoom, however, the selected area to be zoomed in on is selected from the entire scope and remosaiced, which allows the sensor to maintain the original 12.5MP resolution and enable video to be shot much more vividly. Cameras used to switch from wide to tele when zooming in at 3x or more, which caused the image quality and the angle to change. However, the 200MP wide camera can seamlessly zoom in at 2x or even 4x with no drop off in resolution. Because of this consistent quality, users can now enjoy a true-to-life filming experience.

E2E AI Remosaic for Image Capture

In addition to Zoom Anyplace as a video solution, Samsung is introducing End-to-End (E2E) AI Remosaic for image capture. Currently, the steps the 200MP image sensor follows for processing images after shooting are: raw data output occurs before a remosaic, which then leads to image signal processing (ISP) before finishing with JPEG image output. In this process, all of the steps occur in sequence.

E2E AI Remosaic improves the process by enabling the remosaic and ISP to take place simultaneously. In other words, E2E AI Remosaic takes a process that occurs in sequence and makes it occur in parallel, thereby reducing remosaic latency by up to half. The end result is an overall faster image processing time, which reduces the shooting time of 200MP images and improves image quality. Users will be able to take and check photos more quickly, and image quality will deteriorate on account of data loss from latency less often. Because of this, photos taken will have richer details and colors.

Continued Efforts to Improving User Experience

Based on the progress made with ISOCELL Zoom Anyplace for video and E2E AI Remosaic for image capture, Samsung Electronics is making major advancements in transforming the video and photo experiences. Because of solutions such as these, the 2021 release of the 200MP image sensor seems like a long time ago. However, advancements such as these are part of a long-term plan, as the company is continuing to work on solutions that will improve the user experience even further. We hope that users will keep looking forward to capturing the moment with Samsung’s ultra-high resolution ISOCELL image sensor. 

* The images shown are not taken with ISOCELL Zoom Anyplace or E2E AI Remosaic, and are provided for illustrative purposes only for the expected capabilities of a technology still in development.

¹ Remosaic: array conversion processing

Samsung Electronics, a world leader in advanced memory technology, today held its annual Memory Tech Day, showcasing industry-first innovations and new memory products to accelerate technological advancements across future applications — including the cloud, edge devices and automotive vehicles.

Attended by about 600 customers, partners and industry experts, the event served as a platform for Samsung executives to expand on the company’s vision for “Memory Reimagined,” covering long-term plans to continue its memory technology leadership, outlook on market trends and sustainability goals. The company also presented new product innovations such as the HBM3E Shinebolt, LPDDR5X CAMM2 and Detachable AutoSSD.

Jung-Bae Lee, President and Head of Memory Business at Samsung Electronics, used his keynote address to expand on how Samsung will overcome the challenges of the hyperscale era through innovations in new transistor structures and materials. For example, Samsung is currently preparing new 3D structures for sub-10-nanometer (nm) DRAM, allowing larger single-chip capacities that can exceed 100 gigabits (Gb). Following its 12nm-class DRAM that began mass production in May, 2023, Samsung is working on its next-generation 11nm-class DRAM, which is set to offer the industry’s highest density.

NAND flash breakthroughs that will shrink cell sizes and refine channel hole etching techniques are also in development, with the goal of ushering in 1,000-layer vertical NAND (V-NAND). Development is on track for Samsung’s ninth-generation V-NAND to provide the industry’s highest layer count based on a double-stack structure. The company has secured a functional chip for the new V-NAND and plans to start mass production early next year.

“The new era of hyperscale AI has brought the industry to a crossroads where innovation and opportunity intersect, presenting a time with potential for great leaps forward, despite the challenges,” said Lee. “Through endless imagination and relentless perseverance, we will continue our market leadership by driving innovation and collaborating with customers and partners to deliver solutions that expand possibilities.”

Introducing HBM3E ‘Shinebolt’

Today’s cloud systems are evolving to optimize compute resources, which require high-performance memory to handle high capacity, bandwidth and virtual storage capabilities. Building on Samsung’s expertise in commercializing the industry’s first HBM2 and opening the HBM market for high-performance computing (HPC) in 2016, the company today revealed its next-generation HBM3E DRAM, named Shinebolt.

Samsung’s Shinebolt will power next-generation AI applications, improving total cost of ownership (TCO) and speeding up AI-model training and inference in the data center. The HBM3E boasts an impressive speed of 9.8 gigabits-per-second (Gbps) per pin speed, meaning it can achieve transfer rates exceeding up to more than 1.2 terabytes-per-second (TBps).

In order to enable higher layer stacks and improve thermal characteristics, Samsung has optimized its non-conductive film (NCF) technology to eliminate gaps between chip layers and maximize thermal conductivity.

Samsung’s 8H and 12H HBM3 products are currently in mass production and samples for Shinebolt are shipping to customers. Leaning into its strength as a total semiconductor solutions provider, the company also plans to offer a custom turnkey service that combines next-generation HBM, advanced packaging technologies and foundry offerings together.

Other products highlighted at the event include the 32Gb DDR5 DRAM with the industry’s highest capacity, the industry’s first 32Gbps GDDR7 and the petabyte-scale PBSSD, which offers a significant boost to storage capabilities for server applications.

Redefining Edge Devices Through Powerful Form Factors

In order to process data-intensive tasks, today’s AI technologies are moving toward a hybrid model that allocates and distributes workload among cloud and edge devices. Accordingly, Samsung introduced a range of memory solutions that support high-performance, high-capacity, low-power and small form factors at the edge.

In addition to the industry’s first 7.5Gbps LPDDR5X CAMM2¹ — which is expected to be a true game changer in the next-generation PC and laptop DRAM market — the company also showcased its 9.6Gbps LPDDR5X DRAM, LLW² DRAM specialized for on-device AI, next-generation Universal Flash Storage (UFS), and the high-capacity Quad-Level Cell (QLC) SSD BM9C1 for PCs.

Paving the Road for Automotive Memory Solutions Leadership

With advancements in autonomous driving solutions, market demand is also rising for high-bandwidth, high-capacity DRAM and Shared SSDs, which share data with multiple System on Chips (SoCs).  Samsung presented its Detachable AutoSSD that allows data access from a single SSD to multiple SoCs through virtual storage.

The Detachable AutoSSD supports sequential read speed of up to 6,500 megabytes-per-second (MBps) with 4TB of capacity. As it comes in a detachable form factor, the SSD makes upgrades and adjustments easier for vehicle users and manufacturers. Samsung also displayed automotive memory solutions such as high-bandwidth GDDR7 and LPDDR5X with a more compact package size.

Technology That Makes Technology Sustainable

As part of its commitment to minimizing environmental impact, Samsung underscored a variety of innovations within its semiconductor operations that will contribute to increased energy efficiency for customers and consumers.

The company plans to secure ultra-low-power memory technologies that can decrease power consumption in data centers, PCs and mobile devices, while using recycled materials in portable SSD products to reduce its carbon footprint. Samsung’s next-generation solutions, such as the PBSSD, will also help reduce energy usage for server systems as they maximize space efficiency and rack capacity.

While collaborating with stakeholders across the semiconductor value chain, including customers and partners, Samsung’s semiconductor business will continue to play an active role in tackling global climate issues through its sustainability initiative, “technology that makes technology sustainable.”

To learn more about Samsung Semiconductor’s solutions and Samsung Memory Tech Day 2023, please visit: https://semiconductor.samsung.com/events/techday-memory-2023/. The recap of the event will be posted at a later date.

¹ CAMM: Compression Attached Memory Module.
² LLW: Low Latency Wide I/O.

Samsung Electronics, a world leader in advanced semiconductor technology, today hosted Samsung Foundry Forum (SFF) 2023 Europe and unveiled its advanced and wide ranging automotive process solutions, from the most advanced 2-nanometer process to the 8-inch legacy process.

Alongside its customers and Samsung Advanced Foundry Ecosystem (SAFE) partners, Samsung Electronics showcased the latest technological trends and its business strategy tailored to the European market.

“Samsung Foundry is driving innovation in next-generation solutions to build an expanded portfolio that meets the growing needs of our automotive customers, especially as the era of electric vehicles becomes a reality,” said Dr. Siyoung Choi, President and Head of Foundry Business at Samsung Electronics. “We are strengthening our readiness to provide customers with distinguished service across a variety of solutions, including power semiconductors, microcontrollers and advanced AI chips for autonomous driving.”

Since participating in IAA Mobility 2023 for the first time in September, Samsung Electronics is strengthening engagement and partnership in specialty processes for automotive customers in the European market, further solidifying its status as a leading foundry partner for the industry.

Pioneering New Applications With Industry’s Most Advanced eMRAM

In order to meet the needs of the latest advancements in the automotive market, Samsung is setting out to develop the industry’s first 5-nanometer eMRAM for next-generation automotive technology. eMRAM is a next-generation memory semiconductor used for automotive applications that enables high read and write speeds as well as superior heat resistance.

Since developing and mass producing the industry’s first 28nm FD-SOI¹ based eMRAM in 2019, Samsung Electronics has been developing 14nm for the FinFET process based on AEC-Q100 Grade 1. Samsung Foundry plans to expand its eMRAM portfolio by adding 14nm by 2024, 8nm by 2026, and 5nm by 2027.

Samsung’s 8nm eMRAM shows potential to deliver a 30% increase in density and 33% increase in speed, compared to the 14nm process.

Tackling the Market With Automotive Process Solutions From Cutting-Edge to Legacy

The company announced its advanced process roadmap, highlighting its plans to complete mass production readiness for its 2nm process for automotive applications by 2026.

Samsung Electronics is also bolstering its readiness to serve customer needs by expanding its 8-inch BCD (Bipolar-CMOS-DMOS) process portfolio. The BCD process combines the strengths of three different process technologies: Bipolar (B), CMOS (C), and DMOS (D) on one chip and is most commonly used in the production of power semiconductors.

Samsung Electronics plans to expand its current 130nm automotive BCD process to add 90nm by 2025. The 90nm BCD process is expected to bring a 20% decrease in chip area compared to the 130nm process.

Implementing Deep Trench Isolation (DTI) technology, which reduces the distance between each transistor to maximize the performance of power semiconductors, Samsung Foundry will be able to apply a greater voltage of 120V instead of 70V to a wider range of applications. This will enable readiness to provide a process development kit (PDK) that implements 120V to the 130nm BCD process by 2025.

Leading ‘Beyond-Moore’ Innovation Through Advanced Packaging Alliance

Samsung established a Multi-Die Integration (MDI) Alliance by collaborating with its SAFE partners as well as major players in memory, package substrate, and testing.

As part of an industry-wide partnership with 20 partners, Samsung is leading the development of 2.5D and 3D packaging solutions customized for all applications from automotive to high-performance computing (HPC).

Samsung Electronics hosted the annual Samsung Foundry Forum 2023 in the United States on June 27-28, in South Korea on July 4, and in Japan on October 17. The content from the forum will be available on the Samsung Semiconductor website for worldwide access to all visitors beginning November 2.

¹ Fully Depleted Silicon On Insulator (FD-SOI) is a planar process technology that implements an impervious insulating film (SiO2) on top of a silicon wafer and builds transistors on top of it to minimize leakage.

Samsung AI Forum 2023, which is being hosted by the Samsung Advanced Institute of Technology (SAIT), will also focus on and highlight the direction of future research, with the presence of world-renowned AI scholars and industry experts. This seventh iteration of the Samsung AI Forum will be an in-person event, held under the theme of “large-scale AI for a better tomorrow.”

Kye Hyun Kyung, President and CEO of Samsung Electronics Device Solutions Division, will begin the forum with opening remarks, followed by keynotes from Yoshua Bengio, professor at the University of Montreal, and Jim Keller, CEO of AI semiconductor startup Tenstorrent.

Professor Satoshi Matsuoka of the Riken Institute of Computer Science in Japan, and Larry Zitnick, a research scientist from the Meta AI Research Lab will also be giving invited talks. In addition to these notable speakers, SAIT’s AI and CE research leaders — as well as leading academics from around the world — will share the status and vision of their research.

Samsung AI Forum 2023 will address two key topics: Large Language Models and Transformation of AI for Industry, and Large-scale Computing for Large Language Model and Simulation, which cover AI and CE, respectively.

During the forum, Samsung will also host a ceremony to announce the winners of the Samsung AI Researcher Award and the Samsung AI/CE Challenge. These accolades are intended to honor up-and-coming researchers, university students and graduates who are excelling domestically.

Furthermore, the forum will seek to vitalize the AI and CE research ecosystem by presenting posters of leading research papers and preparing networking programs for attendees.

“We believe AI- and CE-enhanced next generation semiconductor technology will play a pivotal role in improving the quality of life and SAIT has been working closely with academics and experts to seek Samsung’s new long-term growth drivers. We hope Samsung AI Forum will accelerate the expansion of the AI and CE research ecosystem around the world,” said Gyoyoung Jin, President of SAIT and Co-Chair of the Samsung AI Forum.

Registration will be available from October 12 on the Samsung AI Forum website, which allows attendees to pre-submit questions to the forum’s speakers.

In the opening keynote, Samsung emphasized the company’s vision to lead hyper-intelligent, hyper-connected and hyper-data technologies in the Fourth Industrial Revolution era with its comprehensive logic solutions uniquely tailored for various industries.

“Generative AI has quickly emerged as perhaps the most significant trend of the year, demanding more powerful foundational technologies to process data and bring AI to life,” said Yong-In Park, President and Head of System LSI Business at Samsung Electronics. “We are paving the path toward a new era of proactive AI, leveraging our Samsung System LSI Humanoid platform, which seamlessly converges our capabilities across a broad spectrum of logic semiconductors, from powerful computational IPs, connectivity solutions to sensors emulating the main five human senses.”

First Glimpse of Exynos 2400 Mobile Processor and Zoom Anyplace Image Sensor Technology

One of the event’s highlights was the preview of Samsung’s next-generation flagship mobile processor, the Exynos 2400 with Xclipse 940 GPU based on the latest AMD RDNA 3 architecture. A live demo showcased the processor’s substantially enhanced ray tracing capability, promising improved realism and immersion in gaming through a range of optical effects including global illumination, reflection and shadow rendering.

Achieving significant advancements in computing performance, the Exynos 2400 processor features a 1.7x increase in CPU performance and a remarkable 14.7x boost in AI performance compared to the previous Exynos 2200 product. Additionally, Samsung introduced a new AI tool designed for upcoming smartphones, demonstrating text-to-image AI generation using its Exynos 2400 reference board.

Also revealed for the first time was Samsung’s Zoom Anyplace technology based on its 200-million pixel image sensor. This sensor innovation will enable an entirely new camera zoom experience, allowing mobile users to take up to 4x close-ups of moving objects without any image degradation. AI-based tracking technology automatically follows and captures objects, all while recordings are made in full screen simultaneously, ensuring that no moment or detail is left uncaptured.

Other debuts at the event were Narrowband Internet of Things (NB-IoT) non-terrestrial networks (NTN) ready next-generation 5G modem; a new vision sensor brand, the ISOCELL Vizion; and a Smart Health processor.

Samsung’s latest automotive processor slated for mass production in 2025, the Exynos Auto V920, was displayed running several applications across multiple displays. Meanwhile, a video of the ISOCELL Auto 1H1 image sensor highlighted its 120Hz high dynamic range (HDR) and superior LED flicker mitigation (LFM) performance that ensure safer driving.

Demonstrating its capability in cellular and connectivity technologies, Samsung featured a video demo of NB- IoT NTN satellite communication in collaboration with Skylo Technologies, an NTN service provider, using Samsung’s next-gen modem reference device. A live demo of wireless lighting control through its ultra-wideband (UWB) solution, the Exynos Connect U100, was also shared.

Additional logic innovations on display include the 200-megapixel (MP) ultra-high-resolution image sensor, the ISOCELL HP2; an advanced driver assistance (ADAS) and autonomous driving (AD) camera solution, the ISOCELL Auto 1H1; quantum-dot (QD) OLED display driver IC (DDI); IoT security solutions; and wireless-charging power management IC (PMIC).

Deep-Dive Into AI With Academic Experts

During the afternoon panel discussion session, Sukhwan Lim, head of the U.S. System LSI R&D Center, joined with academic experts — Professor Jae-sun Seo of Cornell Tech, Professor Yakun Sophia Shao of UC Berkeley and Professor Thierry Tambe of Stanford University — to discuss the implications on compute platforms from recent trends in generative AI and large language models.

“With advances in high-resolution photos and the rising popularity of 4K videos, professional content creators now face the necessity of transferring large amounts of data on a frequent basis,” said Hangu Sohn, Vice President of Memory Brand Product Biz Team at Samsung Electronics. “The T9 offers a solution for professionals to alleviate the challenges that come with managing their data, and Samsung will continue to provide optimized memory solutions that enable professionals to fully concentrate on achieving their creative potential.”

Superior Performance and Massive Storage Capacity

The T9 offers maximum sequential read/write speeds of 2,000 megabytes-per-second (MB/s) on the USB 3.2 Gen 2×2 interface. Approximately two times faster than the previous model T7, speeds of this level allow users to transfer a 4-gigabyte (GB) Full HD video in nearly two seconds.

The T9 comes in three different capacity options to fit the needs of every creator. With 1-terabyte (TB), 2TB and 4TB varieties, the T9 makes it possible to complete quick and frequent transfers while providing ample storage for large volumes of data. Its compact size, similar to that of a credit card, allows creators to carry their inspiration wherever they go with the least of limitations on their creative process.

Luxury Added to Ruggedness

The T9 delivers not only the functional advantages, but also unique design benefits under the concept of “luxury added to ruggedness” based on the “rugged” design concept of the T7 Shield. The curved diagonal lines and reverse carbon patterns on the surface of T9 gives the rubber a fabric-like feel for the user, like a luxurious wallet.

Unmatched Reliability and Thermal Control

Professional creators push the boundaries of what’s possible, and their data is invaluable. Resistant to drops of up to three meters high and guaranteed with a five-year limited warranty, the Portable SSD T9’s sturdy design is built to keep data safe with the reliability that users need and empowers them to pursue their most ambitious projects.

For creators who require fast and efficient large file transfers without slowdowns, the T9 is the perfect companion. With Samsung’s Dynamic Thermal Guard, it efficiently minimizes the performance drops that can be caused by overheating, ensuring consistent and fast transfer speeds. Moreover, the T9 is designed in compliance with the international safety standard IEC 62368-1, making it an ideal choice for a wide range of demanding tasks with minimal heat transfer.

Manage T9 With Samsung Magician Software 8.0

The Samsung Magician software provides an enhanced experience for users through features such as performance benchmark, security functions, firmware updates and real time health status check. Firmware update is a very important feature for memory products, and Magician software is ready to solve any field issues that might occur. With the new 8.0 version released in September 2023, all Samsung software such as Data migration, PSSD software, Card authentication tool, will be integrated to Magician software and the OS support range will be expanded, for Windows, Mac and Android user convenience.

Seamless Compatibility

With proven experience in Portable SSD compatibility, Samsung has designed the T9 to meet the USB Type-C power spec and to support the seamless workflow of professional creators. This has enhanced compatibility across operating systems such as Windows, macOS, smartphones and tablets, gaming consoles and professional high-resolution cameras. The T9 also comes with USB Type C-to-C and USB Type C-to-A cables.

With the manufacturer’s suggested retail prices (MSRP) of $139.99 for the 1TB, $239.99 for the 2TB and $439.99 for the 4TB, the Samsung Portable SSD T9 will be available to consumers worldwide on October 3, 2023.

Samsung Portable SSD T9 Product Specifications
Interface	USB 3.2 Gen 2×2 (20Gbps)
Hardware Information	Capacities1		1TB	2TB	4TB
	Dimensions2		88 x 60 x 14mm
	Weight2		122 grams
Performance	Sequential Read3		Up to 2,000MB/sec	Up to 2,000MB/sec	Up to 2,000MB/sec
	Sequential Write3		Up to 1,950MB/sec	Up to 1,950MB/sec	Up to 2,000MB/sec
Durability	Drop Resistant4		Up to 3m
Security	Encryption		AES 256-bit hardware encryption
	Software5		Samsung Magician Software
Compatibility	Operating System6		Windows®, macOS®, Android
	Device6		PCs, Laptops, Tablets, Smartphones
Reliability	Temperature7	Operating	0°C to 60°C
		Non-Operating	-40°C to 85°C
	Humidity		5% to 95% non-condensing
	Shock	Non-Operating	1,500G, duration: 0.5ms, 3 axis
	Vibration	Non-Operating	20~2,000Hz, 20G
Certifications			CE, BSMI, KC, VCCI, RCM, FCC, IC, UL, TUV, CB, EAC, UKCA, BIS
RoHS Compliance			RoHS 2
Warranty8			Five (5) Year Limited Warranty

¹ 1GB = 1,000,000,000 bytes, 1TB = 1,000,000,000,000 bytes. Lower capacity may be demonstrated by your computer due to use of a different measurement standard.
² The actual product weight and size may vary depending on the product’s capacity and measurement method.
³ Performance may vary depending on host configuration, cable and user system environment. To reach maximum sequential read/write speeds of up to 2,000 MB/s, respectively, the host device and connection cables must support USB 3.2 Gen 2×2 and the UASP mode must be enabled.
* Test system configuration: ASUS ROG STRIX Z590-E GAMING WIFI, Intel i9-10900K CPU @ 3.70GHz, 3696 MHz, 10 Core(s), 20 Logical Processor(s) / DDR4 8GB DRAM frequency1132.3 MHz / Win 11 Pro
⁴ Based on an internal free fall shock test conducted under controlled conditions. Drop resistance may vary depending on the actual environmental conditions. Damage caused by drop is not covered under warranty.
* Test condition: Device was dropped free-fall to a metal plate from 3-meter height.
** No warranty is provided for any physical damage.
⁵ Samsung Magician software is available in Windows^®, macOS^® and Android. It requires Windows^® 7 and higher, macOS^® High Sierra (10.13.6) and higher, or Android 5.1 (Lollipop) and higher. Older versions of the Windows^®, macOS^® and Android operating systems may not be supported.
⁶ Compatibility with host devices may vary. Some operating systems may require T9 reformatting. T9 is backward compatible with USB 3.2, USB 3.1, USB 3.0 and USB 2.0.
⁷ Tc is measured at the hottest point on the case. Sufficient airflow is recommended to be operated properly on heavier workload within device operating temperature.
⁸ The LED component of the T9 is warranted for five (5) years of typical use, typical use for the purposes of this warranty defined as four (4) hours of operation per day at temperatures of 40℃ or below. For more information on the warranty, please visit https://semiconductor.samsung.com/consumer-storage/support/warranty.

Samsung Electronics, a world leader in advanced memory technology, today announced that it has developed the industry’s first Low Power Compression Attached Memory Module (LPCAMM) form factor, which is expected to transform the DRAM¹ market for PCs and laptops — and potentially even data centers. Samsung’s groundbreaking development for its 7.5 gigabits-per-second (Gbps) LPCAMM has completed system verification through Intel’s platform.

Historically, PCs and laptops have conventionally used LPDDR DRAM or DDR-based So-DIMMs.² While LPDDR is compact, it’s permanently attached to the motherboard, making it challenging to replace during repairs or upgrades. On the other hand, So-DIMMs can be attached or detached easily but have limitations with performance and other physical features.

LPCAMM overcomes the shortcomings of both LPDDR and So-DIMMs, addressing the increased demand for more efficient yet compact devices. Being a detachable module, LPCAMM offers enhanced flexibility for PC and laptop manufacturers during the production process. Compared to So-DIMM, LPCAMM occupies up to 60% less space on the motherboard. This allows more efficient use of devices’ internal space while also improving performance by up to 50% and power efficiency by up to 70%.

LPDDR’s power-saving features have made it an attractive option for servers, since it could potentially improve total cost of operation (TCO) efficiency. However, using LPDDR can create operational difficulties such as the need to replace the entire motherboard when upgrading a server’s DRAM specifications. LPCAMM offers a solution to these challenges, creating significant potential for it to become the solution of choice for future data centers and servers.

“The energy efficiency and repairability advantages of LPCAMM make this new form factor a game changer in today’s PC market,” said Dr. Dimitrios Ziakas, Vice President of Memory & IO Technology at Intel. “We’re excited to be a part of the new standard enabling the client PC ecosystem and pave the path for future adoption and innovation in broader market segments.”

“With the growing demand in innovative memory solutions encompassing high performance, low power consumption and manufacturing flexibility across various fields, LPCAMM is expected to gain wide adoption in PCs, laptops and data centers,” said Yongcheol Bae, Executive Vice President of Memory Product Planning Team at Samsung Electronics. “Samsung is committed to actively pursuing opportunities to expand the LPCAMM solution market and collaborating closely with the industry to explore new applications for its use.”

LPCAMM is set to be tested using next-generation systems with major customers this year, and commercialization is planned for 2024.

To learn more about Samsung’s LPDDR products, please visit this address.

¹ DRAM: Dynamic Random Access Memory
² So-DIMM: Small outline Dual In-line Memory Module

Offering blazing-fast speeds and ultimate power efficiency, the 990 PRO series is optimized for massive data volumes, such as 3D/4K graphics work, data analytics and high-quality games, making it the ideal SSD for today’s PCs, laptops, game consoles and computing systems. With improved total bytes written (TBW) ratings of up to 2,400TB, the 990 PRO series ensures increased SSD reliability and longevity, ideal for those with highly demanding workloads and large storage capacity needs.

“Today’s gamers and creative professionals require high-capacity, high-performance SSDs and Samsung’s new 4TB SSD 990 PRO is the perfect storage solution to meet their needs,” said Hangu Sohn, Corporate Vice President of the Memory Brand Product Biz Team at Samsung Electronics. “As the demand for high-resolution content and ultra-fast data-processing speeds continues to grow, high-performance NVMe² storage has become a core requirement.”

Best-in-Class Performance and Capacity

Featuring Samsung’s V8 technology and improved controller, the 4TB 990 PRO offers near-max performance in a PCIe 4.0 interface, with sequential read speeds of up to 7,450 megabytes-per-second (MB/s) and write speeds of up to 6,900MB/s. The newly expanded capacity of 4TB delivers boosted random read and write speeds of up to 1,600K and 1,550K IOPS³ respectively, making it the ideal solution for gamers, creative professionals and tech enthusiasts seeking top-tier performance and storage space.

With the fastest random read performance among PCIe 4.0 interface consumer SSDs on the market,⁴ the 4TB 990 PRO significantly reduces mid-game stalls and accelerates the loading of high-quality videos, increasing gamers’ enjoyment and immersion. For high-end games that support the latest in game-loading technology, the 990 PRO series can help reduce lag, allowing users to enjoy real-time gameplay experiences with consistently high frames per second (FPS).

Enhanced Power Efficiency and Reliable Thermal Control

The 990 PRO series achieves breakthrough power efficiency, with an up to 50% performance improvement in comparison to the previous 980 PRO series. It also incorporates a nickel coating on the controller and features a heat spreader label on the back side of the SSD, ensuring optimal temperature level maintenance and minimal performance fluctuations over time. The 990 PRO with Heatsink is equipped with an effective, slim heatsink, giving users the full experience in sustained high-performance computing and gaming capabilities. Furthermore, the drive is compatible with the latest game consoles, so it can speed up game installation and loading times, while also preventing performance drops that can result from overheating.

Single-Sided 4TB SSD for Ultra-Slim Laptops

Thanks to Samsung’s V8 1Tb high-density NAND and the company’s memory stacking technology, the 4TB 990 PRO was designed with a single-sided M.2 form factor, which makes it slimmer than other double-sided M.2 SSDs. This frees users from the concerns that double-sided M.2 SSDs can cause when installed into ultra-thin laptops, such as an inability to install the SSD or the risk of damaging other components. With a single-sided M.2 form factor, the streamlined design provides abundant storage capacity and sustainable performance.

Samsung Magician Software and Availability

The Samsung Magician software ensures optimal performance in SSDs by keeping firmware, drivers and other settings up to date, while also offering the flexibility to customize power and performance optimization, according to user preferences. Moreover, the software supports RGB functionality for the 990 PRO with Heatsink, so gamers have the option to customize color and LED effects. Set to be released in September 2023, the new version of Magician 8.0 will be an integrated software solution for SSDs, portable SSDs, memory cards and USB flash drives.

The 4TB capacity models of the 990 PRO and 990 PRO with Heatsink will be available in early October 2023. The 990 PRO series’ 1TB and 2TB models are currently available for purchase. For more information, including warranty details, please visit samsung.com/SSD or semiconductor.samsung.com/internal-ssd/.

Samsung SSD 990 PRO | 990 PRO With Heatsink Specifications

¹ PCIe: Peripheral Component Interconnect express.
² NVMe: Non-Volatile Memory express.
³ IOPS: Input/output Operations Per Second.
⁴ As of Aug, 2023, fastest random read performance among PCIe 4.0 interface consumer SSDs on the market, with random read speeds of up to 1,600K IOPS and random write speeds of up to 1,550K IOPS.
⁵ The NVM Express^® design mark is a registered trademark of NVM Express, Inc.
⁶ 1GB = 1,000,000,000 bytes by IDEMA. A certain portion of capacity may be used for system file and maintenance use, so the actual capacity may differ from what is indicated on the product label.
⁷ Sequential and random performance measurements are based on IOmeter1.1.0. Performance may vary based on an SSD’s firmware version, system hardware & configuration.
Test system configuration: AMD Ryzen 7 5800X 8-Core Processor CPU@3.80GHz, DDR4 3600MHz 16GBx2 (PC4-25600 Overclock), Windows 10 Pro 64bit, ASRock-X570 Taichi
⁸ Samsung Electronics shall not be liable for any loss, including but not limited to loss of data or other information contained on Samsung Electronics product or loss of profit or revenue which may be incurred by user. For more information on the warranty, please visit samsung.com/SSD or semiconductor.samsung.com/internal-ssd/.
⁹ Five years or total bytes written (TBW), whichever comes first. For more information on the warranty, please refer to the enclosed warranty document in the package.

Samsung Electronics: Revolutionizing the Road Ahead

Aligning automotive innovations from all of its semiconductor business units for the first time, Samsung Electronics underscores the symbiotic potential among its diverse offerings across memory, system LSI, foundry and LED technologies. This unification solidifies Samsung’s leading position as an all-encompassing mobility solutions provider.

“IAA MOBILITY 2023 serves as an unparalleled platform for us to demonstrate the collective strength and commitment of our individual businesses, built to revolutionize the automotive industry through our expansive suite of semiconductor technologies,” said Dermot Ryan, President of Device Solutions Europe, Samsung Electronics. “Our shared vision is to collaboratively craft safer, more sustainable and profoundly interconnected automotive experiences for customers and communities worldwide.”

Pioneering Memory Advancements for Future Mobility

With future vehicles demanding advanced computing and storage capabilities, Samsung’s proven memory technologies emerge as a mainstay in accelerating data-driven mobility. At IAA MOBILITY 2023, Samsung will highlight its full lineup of memory solutions finely tuned for forthcoming automotive applications. These include LPDDR5X,² GDDR7,³ AutoSSD and UFS 3.1⁴ products that offer high-performance and high-capacity in areas such as infotainment and advanced driver-assistance systems (ADAS) — all with certified auto-grade reliability. Building upon its robust automotive portfolio and extensive ecosystem partnerships, Samsung aims to become the largest automotive memory provider by 2025, empowering global customers to achieve fully connected mobility experiences.

Elevating the In-Car Experience With System LSI Innovations

As the automotive landscape shifts toward electrification and digitalization, in-car entertainment and safety ascend as defining attributes of next-generation vehicles. During IAA MOBILITY 2023, Samsung will present a tailored processor and sensor portfolio designed to address these evolving demands. Samsung’s Exynos Auto V920 processor, optimized for premium in-vehicle infotainment (IVI) systems, enables smooth playback of graphics-rich videos and games on multiple displays. Meanwhile, Samsung’s ISOCELL Auto sensors provide an exhaustive 360-degree car vision from front- (ISOCELL Auto 1H1) to rear- and surround-views (ISOCELL Auto 4AC), ensuring safety for both drivers and passengers. Extending safety features to the car interior, Samsung will demonstrate in-cabin sensor technologies primed for driver and occupant monitoring systems, capable of detecting and alerting potentially unsafe driver conditions like drowsiness, fatigue and distraction.

Advancing Automotive Semiconductor Frontiers With Foundry Solutions

In tune with the burgeoning automotive semiconductor market, Samsung’s Foundry Business has strategically honed its focus on automotive innovation and manufacturing excellence. At IAA MOBILITY 2023, the company will present its latest automotive design solutions, spanning system-on-chips (SoCs) for IVI and ADAS, power management ICs⁵ (PMICs) and battery management ICs (BMICs) as well as automotive microcontrollers (MCUs), all featuring the latest of Samsung Foundry’s technologies. Samsung will also highlight its automotive process technology roadmap, targeting mass production readiness of its four-nanometer (nm) process (SF4A⁶) by 2025 and its 2nm process (SF2A⁷) by 2026. Augmenting this initiative, Samsung Foundry is fortifying its intellectual property (IP) portfolio across analog, memory interface, high-speed interface, security and die to die (D2D) as well as bolstering its design infrastructure.

Next-Gen LED Technologies for the Vehicles of Tomorrow

Samsung will also display its advanced and highly customizable LED lighting solutions ideal for future electric and autonomous vehicles. The company’s PixCell LED⁸ represents an intelligent adaptive driving beam (ADB) innovation that empowers car manufacturers to create smaller lamps with precise and selective lighting control. Achieving Full HD resolution on a compact 0.25-inch display, Samsung’s next-gen Micro LED technology is ideally suited for ultra-high-resolution head-up displays (HUDs) while enabling driver information viewing through augmented reality (AR) glasses. Its Mini LED technology, an evolutionary vehicle-to-everything (V2X) solution, will unlock intricate animated signal effects, enhancing communication with other vehicles and pedestrians.

Samsung Display: OLEDs To Enhance the Automobile Experience

Samsung Display is exhibiting at IAA Mobility 2023, making its debut at an auto show for the first time ever, highlighting its display leadership with a unique exhibition that allows visitors to experience the many advantages of OLED technology. This ties in with the company’s intention to become a leading provider of OLED displays on next-generation automobile applications as the industry transitions away from LCDs.

Visitors to the Samsung Display booth will be able to experience the Safe Driving Center, where they can compare the difference between OLEDs and LCDs. Participants will discover that because OLEDs can portray True Black (Certified by VESA), they can significantly enhance driver visibility — and therefore safety — in dark environments.

The booth will also showcase OLEDs’ low power consumption, owing to OLED displays only lighting up pixels where the actual color appears, unlike LCDs. Of course, this characteristic is becoming ever more important in a world where electric vehicles (EVs) continue to grow in popularity. Additionally, visitors can explore how OLED technology enhances the interior of the vehicle. Since OLEDs can be bent and curved to match the car’s interior, and are lighter and thinner than LCDs, they allow for much greater design flexibility.

In the Next Mobility Projects space, visitors can get a glimpse of future OLED displays in a variety of form factors, such as the Flex S, a multi-foldable display that folds into an S shape with one side of the device inward and the other outward. It can be carried like a smartphone, but then expanded to 12.4 inches and used as the car dashboard. Other innovative products on display include a rollable display that expands more than five times on the vertical axis for rear seat entertainment (RSE) systems in the backseat, as well as a slidable display that expands the screen on both sides.

Samsung SDI: Cutting-Edge Battery Solutions for Next-Gen Electric Vehicles

Samsung SDI is making its sixth IAA appearance at IAA MOBILITY 2023, and the battery maker is poised to unveil “super gap”⁹ battery solutions for future EVs. The company is also making engagement with top R&D talent from Europe a priority.

Visitors to Samsung SDI’s booth will have a chance to see the company’s technological highlights in the PRiMX¹⁰ Zone, with the theme of “PRiMX, Experience the Best.” The zone will showcase a next-generation lineup of products including the all-solid-state battery, 46-phi cylindrical battery, nickel manganese (NMX) battery and lithium manganese iron phosphate (LMFP) battery, along with premium-segment solutions. In the ESG¹¹ Zone, Samsung SDI will present the company’s ongoing initiatives for a sustainable future under the long-term vision of “To make the world sustainable through our innovative technology.”

To cater to varying needs for mass-market electric cars, Samsung SDI is also unveiling cobalt-free battery solutions like NMX and LMFP as a strategic edge ensuring both safety and cost-effectiveness. Also on display is a new form factor, where cathode and anode terminals are re-positioned to the side, enabling maximum space efficiency and enhanced performance and safety.

In attendance at IAA MOBILITY 2023 will be Samsung SDI President and CEO Yoon-ho Choi, who will meet with major European customers. Choi will also make an appearance at the Tech & Career (T&C) Forum, SDI’s career fair that introduces its technological prowess to the industry and allows the company to engage with prospective employees. The Forum is being held in Munich for the first time, after being held in Seoul last month. It took place twice in Seoul and New York last year.

“Home to global automotive industry players, including both carmakers and parts makers, Europe is a crucial market that will lead the future EV industry,” said Choi. “Using our unrivaled technologies, we will continually strive to provide our key European customers with products that feature the highest levels of safety and quality.”

¹ The International Motor Show Germany, or Internationale Automobil-Ausstellung (IAA) in German, is one of the world’s largest mobility trade fairs. It consists of two separate fairs: IAA MOBILITY and IAA TRANSPORTATION. IAA MOBILITY focuses on the latest developments in passenger vehicles, motorcycles and bikes.
² LPDDR5X: Low Power Double Data Rate 5X.
³ GDDR7: Graphics Double Data Rate 7.
⁴ UFS 3.1: Universal Flash Storage 3.1.
⁵ IC: Integrated Circuit.
⁶ SF4A: Samsung Foundry 4nm Automotive.
⁷ SF2A: Samsung Foundry 2nm Automotive.
⁸ The PixCell LED is a super-compact solution that uses sharp precision to deliver enhanced visibility for safer driving at night and in poor weather conditions.
⁹ Super gap: a wide lead that a market leader has over its competitors.
¹⁰ In 2021, Samsung SDI launched the battery brand PRiMX: Prime Battery for Maximum Experience.
¹¹ ESG: Environmental, Social and Governance.

“With our 12nm-class 32Gb DRAM, we have secured a solution that will enable DRAM modules of up to 1-terabyte (TB), allowing us to be ideally positioned to serve the growing need for high-capacity DRAM in the era of AI (Artificial Intelligence) and big data,” said SangJoon Hwang, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “We will continue to develop DRAM solutions through differentiated process and design technologies to break the boundaries of memory technology.”

A 500,000 Fold Increase in DRAM Capacity Since 1983

Having developed its first 64-kilobit (Kb) DRAM in 1983, Samsung has now succeeded in enhancing its DRAM capacity by a factor of 500,000 over the last 40 years.

Samsung’s newest memory product, developed using cutting-edge processes and technologies to increase integration density and design optimization, boasts the industry’s highest capacity for a single DRAM chip and offers double the capacity of 16Gb DDR5 DRAM in the same package size.

Previously, DDR5 128GB DRAM modules manufactured using 16Gb DRAM required the Through Silicon Via (TSV) process. However, by using Samsung’s 32Gb DRAM, the 128GB module can now be produced without using the TSV process, while reducing power consumption by approximately 10% compared to 128GB modules with 16Gb DRAM. This technological breakthrough makes the product the optimal solution for enterprises that emphasize power efficiency, such as data centers.

With its 12nm-class 32Gb DDR5 DRAM as a foundation, Samsung plans to continue expanding its lineup of high-capacity DRAM to meet the current and future demands of the computing and IT industry. Samsung will reaffirm its leadership in the next-generation DRAM market by supplying the 12-nm-class 32Gb DRAM to data centers as well as to customers that require applications like AI and next-generation computing. The product will also play an important role in Samsung’s continued collaboration with other key industry players.

Mass production of the new 12nm-class 32Gb DDR5 DRAM is scheduled to begin by the end of this year.

To find out more about Samsung’s DRAM products, visit Samsung Semiconductor website.

¹ DDR5 DRAM: Double-Data Rate 5 Dynamic Random-Access Memory.

“With the growing volume of high-resolution content generated from gadgets such as drones, action cameras and DSLR cameras, professional creators should be able to work with large–sized content seamlessly, whether they are writing, reading or transferring their data,” said Hangu Sohn, Vice President of Memory Brand Product Biz Team at Samsung Electronics. “As creators rely on high speed and performance of the memory cards, the new Samsung PRO Ultimate significantly reinforces such needs through enhanced controller technologies and multi-proof protection features.”

Best-in-Class Read and Write Speeds With UHS-I Interface

The PRO Ultimate underscores Samsung’s technical innovations, setting an industry-leading standard with read speeds of up to 200MB/s, the maximum speed achievable through the UHS-I interface and write speeds of 130MB/s. These reliable high-performance read/write speeds, regardless of capacity, allow for the seamless transfer of heavy-duty files such as 4K ultra-high definition (UHD) and Full HD (FHD) video with Video Speed Class 30 (V30) support.

To meet consumer needs for the ability to manage large volumes of content and quick transfers to other devices, the PRO Ultimate microSD card showcases an Application Performance Class 2 (A2), facilitating high performance for random read and write operations as well as multi-tasking capabilities.

Increased Reliability and Durability

The Samsung PRO Ultimate provides professional photographers and creators with reliable performance, thanks to the controller’s enhanced Error Correction Code (ECC) engine and multi-proof protection features that ensure safer data storage over extended periods.

With an upgrade to the ECC’s Low Density Parity Check (LDPC) code from a 1-kilobyte (KB) to a 2KB engine, the PRO Ultimate offers enhanced durability for a higher volume of write-and-erase cycles.

The PRO Ultimate passes the industry’s most rigorous test settings and offers worry-free usage even in challenging environments, with features such as water protection for up to 72 hours in two meters of depth, drop-proof design from heights of up to five meters, wear-out protection for up to 10,000 swipes, as well as X-ray and magnetic protection. It can also operate in extreme temperatures ranging from -25°C to 85°C (-13°F to 185°F). Additionally, the PRO Ultimate SD card provides shock protection of up to 1,500g.

Maximized Power Efficiency With 28nm Controller

A new 28-nanometer (nm) controller brings a 37% improvement in power efficiency compared to Samsung’s previous lines that include the 55nm controller. This gives consumers the ability to use their devices for extended periods without the need for frequent recharging, allowing users to make the most out of their device’s battery life.

Multi-Device Compatibility

The PRO Ultimate SD card is compatible with DSLR and mirrorless cameras, camcorders, PCs and laptops, maximizing the ability to create, edit and transfer high-performance media across multiple devices.

The PRO Ultimate microSD card offers extensive compatibility with Android smartphones, tablets, handheld game consoles, action cameras, drones, PCs and more. It is an ideal choice for professionals seeking a reliable and versatile memory card to meet their diverse needs.

General Availability

The PRO Ultimate microSD card is available in three different storage capacities of 128GB, 256GB and 512GB with manufacturer’s suggested retail prices (MSRP) ranging from $20.99 for the 128GB model to $64.99 for the 512GB card. The PRO Ultimate microSD card with the card reader ranges from $28.99 for 128GB to $72.99 for 512GB. The PRO Ultimate SD card is offered in four storage capacities of 64GB, 128GB, 256GB and 512GB, with MSRPs starting at $18.99 for 64GB to $84.99 for 512GB. The PRO Ultimate SD card with the card reader ranges from $26.99 to $92.99 for the 64GB and 512GB cards respectively.

The PRO Ultimate microSD card will be available to users worldwide starting today, while the PRO Ultimate SD card will be available worldwide in October, 2023. A card reader-included option for all capacities in both sizes will also be available to users.

The new PRO Ultimate memory cards come with a ten-year limited warranty.

Specifications

Capacity1		512GB	256GB	128GB	512GB	256GB	128GB	64GB
Interface		UHS-I
SD Standard		microSDXC			SDXC
Performance2	Read	200MB/s
	Write	130MB/s
Speed Class		U3, V30, Class 10, A2			U3, V30, Class 10
Certification		FCC, CE, VCCI, RCM
Multi-proof (7)		Water, Temperature, X-Ray, Magnet, Drop, Wearout, Shock3
Warranty		Limited 10-year warranty

¹ 1GB = 1,000,000,000 bytes (1 billion bytes). Actual usable capacity may vary.
² Up to 200MB/s read speeds, engineered with proprietary technology to reach speeds beyond UHS-I 104MB/s, require compatible devices capable of reaching such speeds. Up to 130MB/s write speeds, based on Samsung’s internal testing, performance may be lower depending upon host device interface, usage conditions and other factors.
³ Shock-proof is applicable to SD card only.

Samsung Electronics, a world leader in advanced semiconductor technology, today announced that it has completed development of the industry’s first Graphics Double Data Rate 7 (GDDR7) DRAM. It will first be installed in next-generation systems of key customers for verification this year, driving future growth of the graphics market and further consolidating Samsung’s technological leadership in the field.

Following Samsung’s development of the industry’s first 24Gbps GDDR6 DRAM in 2022, the company’s 16-gigabit (Gb) GDDR7 offering will deliver the industry’s highest speed yet. Innovations in integrated circuit (IC) design and packaging provide added stability despite high-speed operations.

“Our GDDR7 DRAM will help elevate user experiences in areas that require outstanding graphics performance, such as workstations, PCs and game consoles, and is expected to expand into future applications such as AI, high-performance computing (HPC) and automotive vehicles,” said Yongcheol Bae, Executive Vice President of Memory Product Planning Team at Samsung Electronics. “The next-generation graphics DRAM will be brought to market in line with industry demand and we plan on continuing our leadership in the space.”

Samsung’s GDDR7 achieves an impressive bandwidth of 1.5-terabytes-per-second (TBps), which is 1.4 times that of GDDR6’s 1.1TBps and features a boosted speed per pin of up to 32Gbps. The enhancements are made possible by the Pulse Amplitude Modulation (PAM3) signaling method adopted for the new memory standard instead of the Non Return to Zero (NRZ) from previous generations. PAM3 allows 50% more data to be transmitted than NRZ within the same signaling cycle.

Significantly, in comparison with GDDR6, the latest design is 20% more energy efficient with power-saving design technology optimized for high-speed operations. For applications especially mindful of power usage, such as laptops, Samsung offers a low-operating voltage option.

To minimize heat generation, an epoxy molding compound (EMC) with high thermal conductivity is used for the packaging material in addition to IC architecture optimization. These improvements dramatically reduce thermal resistance by 70% in comparison to GDDR6, aiding in stable product performance even in conditions with high-speed operations.

Samsung Electronics, a world leader in advanced semiconductor technology, today announced that it has initiated mass production of its new automotive Universal Flash Storage (UFS) 3.1 memory solution optimized for in-vehicle infotainment (IVI) systems. The new solution offers the industry’s lowest energy consumption, enabling car manufacturers to provide the best mobility experience for consumers.

The UFS 3.1 lineup will come in 128, 256 and 512-gigabyte (GB) variants to meet different needs of customers. The enhanced lineup allows more efficient battery life management to future automotive applications such as electric or autonomous vehicles. The 256GB model, for instance, has reduced its energy consumption by about 33% compared to the previous generation product. The 256GB model also provides a sequential write speed of 700-megabytes-per-second (MB/s) and a sequential read speed of 2,000MB/s.

“Samsung’s new UFS 3.1 solution addresses a wide range of customer needs for optimized IVI systems while pushing forward with next-generation memory trends that require higher ESG standards,” said Hyunduk Cho, Vice President of Memory Product Planning Team at Samsung Electronics. “We aim to expand our presence in the automotive semiconductor market, following the introduction of our UFS 3.1 solution for advanced driver assistance systems (ADAS).”

The new automotive UFS 3.1 solution satisfies the requirements of AEC-Q100 Grade2, a semiconductor quality standard for vehicles which guarantees stable performance in a wide range of temperatures from negative 40°C to 105°C.

Samsung plans to supply its UFS 3.1 products to global automakers and parts manufacturers by the end of this year.

As Samsung continues to strengthen its automotive memory solution portfolio, the company received an ASPICE Level 2 certification from customers in April, 2023, with its ADAS-oriented UFS 3.1 product. It obtained ASPICE Level 2 certification from C&BIS, a renowned automobile certification agency, with the UFS 3.1 product for ADAS supplied to customers and received verification for the high stability required in automotive semiconductors this month.

Since Samsung first started its automotive memory business in 2015, it has continued to grow rapidly. In 2017, the company introduced the industry’s first UFS for vehicles and has since been providing various memory solutions such as AutoSSD, Auto LPDDR5X and Auto GDDR6. As data storage and computational demands on the automotive sector continue to grow, the company aims to deliver optimized memory solutions for automotive customers and reinforce its development and quality enhancement efforts to accelerate its market leadership.

Samsung Electronics, a world leader in advanced semiconductor technology, today announced its latest foundry technology innovations and business strategy at the 7^th annual Samsung Foundry Forum (SFF) 2023.

Under the theme “Innovation Beyond Boundaries,” this year’s forum delved into Samsung Foundry’s mission to address customer needs in the artificial intelligence (AI) era through advanced semiconductor technology.

Over 700 guests, from customers and partners of Samsung Foundry, attended this year’s event, of which 38 companies hosted their own booths to share the latest technology trends in the foundry industry.

“Samsung Foundry has always met customer needs by being ahead of the technology innovation curve, and today, we are confident that our gate-all-around (GAA)-based advanced node technology will be instrumental in supporting the needs of our customers using AI applications,” said Dr. Siyoung Choi, President and Head of Foundry Business at Samsung Electronics. “Ensuring the success of our customers is the most central value to our foundry services.”

As part of its business strategy to solidify its competitiveness as a leading foundry service, Samsung Foundry today announced the following:

• Expanded applications of its 2-nanometer (nm) process and specialty process
• Expanded production capacity at its Pyeongtaek fab Line 3 (P3)
• Launched a new “Multi-Die Integration (MDI) Alliance” for next-generation packaging technology
• Continued progress in the foundry ecosystem with Samsung Advanced Foundry Ecosystem (SAFE) partners

Leading the Industry With Expanded 2nm Applications and Specialty Processes

At the event, Samsung announced detailed plans for the mass production of its 2nm process, as well as performance levels.

The company will begin mass production of the 2nm process for mobile applications in 2025, then expand to HPC in 2026 and automotive in 2027. Samsung’s 2nm process (SF2) has shown a 12% increase in performance, a 25% increase in power efficiency and a 5% decrease in area, when compared to its 3nm process (SF3).

Mass production of SF1.4 will begin in 2027 as planned.

From 2025, Samsung will begin foundry services for 8-inch gallium nitride (GaN) power semiconductors targeting consumer, data center and automotive applications.

To secure the most cutting-edge technology in 6G, the 5nm Radio Frequency (RF) is also under development and will be available in the first half of 2025. Samsung’s 5nm RF process shows a 40% increase in power efficiency and a 50% decrease in area compared to the previous 14nm process.

In addition, the company will add automotive applications to its 8nm and 14nm RF, expanding beyond the mobile applications currently under mass production.

Stabilizing the Supply Chain and Meeting Customer Needs With Expanded Capacity

Under the “Shell-First” operation strategy that aims to better respond to customer demands, Samsung Foundry is maintaining its commitment to invest and build capacity by adding new manufacturing lines in Pyeongtaek, South Korea, and Taylor, Texas. Current expansion plans will increase the company’s clean room capacity by 7.3 times by 2027 compared to 2021.

The company plans to begin mass production of foundry products for mobile and other applications at Pyeongtaek Line 3 in the second half of the year. Samsung is also focusing on increasing its manufacturing capacity in the United States. Construction of the new fab in Taylor is proceeding according to initial plans and is expected to finish by the end of the year, beginning operation in the second half of 2024.

Samsung will continue to expand its production base to Yongin, South Korea, to power the next generation of Samsung’s foundry services. Yongin is a nearby city located about 10km east of Samsung’s Hwaseong and Giheung campuses.

Leading the “Beyond Moore” Era With New Multi-Die Integration Alliance

In a bid to address the rapid growth in the chiplet market for mobile and HPC applications, Samsung is launching the MDI Alliance in collaboration with its partner companies as well as major players in memory, substrate packaging and testing.

The MDI Alliance leads innovation in stacking technology by forming a packaging technology ecosystem for 2.5D and 3D Heterogeneous Integration. Together with partners across the ecosystem, Samsung will provide a one-stop turnkey service to better support customers’ technological innovation.

Samsung plans to actively respond to customer and market needs by developing customized packaging solutions that are tailored to the individual needs of various applications including HPC and automotive.

Pushing Boundaries With Partners for Enhanced Fabless Support

Following the Samsung Foundry Forum, Samsung will be hosting the Samsung Advanced Foundry Ecosystem (SAFE) Forum on June 28 under the theme “Accelerating the Speed of Innovation.”

Together with over a hundred partners across electronic design automation (EDA), design solution partners (DSP), outsourced semiconductor assembly and test (OSAT), cloud and IP, Samsung is promoting mutual growth of the foundry ecosystem to power the success of customers.

Samsung has long supported stronger collaboration between partners across the foundry ecosystem, advancing the boundaries of design infrastructure from 8-inch to the latest GAA process. Samsung and its 23 EDA partners now offer over 80 design tools and is also collaborating with 10 OSAT partners to develop 2.5D/3D packaging design solutions.

Samsung provides product design services to a variety of customers from startups to industry leaders through strong partnerships with nine DSP partners that have extensive expertise in Samsung Foundry processes, as well as nine Cloud partners.

Samsung has also secured a portfolio of over 4,500 key IPs from 50 global IP partners. Samsung plans to secure additional next-generation high-speed interface IPs for SF2, including LPDDR5x, HBM3P, PCIe Gen6 and 112G SerDes. Its long-term partnerships with leading global IP providers in their respective fields will help cater to customer needs in AI, HPC and automotive.

“Through extensive collaboration with our SAFE partners, Samsung Foundry is helping simplify designs that are becoming even more complex amid the application of the most advanced processes and new technologies such as heterogeneous integration,” said Jong-wook Kye, Executive Vice President and Head of Design Platform Development, Foundry Business at Samsung Electronics. “We will continue to strive for consistent growth in the Samsung Foundry ecosystem in terms of both scale and quality.”

Samsung Electronics will be hosting the Samsung Foundry Forum 2023 in South Korea in July, and the event will expand to Europe and Asia later in the year to meet customers in each region.

Samsung Electronics, a world leader in advanced semiconductor technology, today announced that its latest automotive processor, the Exynos Auto V920, has been selected to power Hyundai Motor Company’s next-generation in-vehicle infotainment (IVI) systems, which are expected to roll out by 2025. This marks Samsung’s first collaboration on automotive semiconductors with Hyundai Motor, a global mobility leader.

“We are thrilled to be collaborating with Hyundai Motor, a prominent global mobility manufacturer, and we anticipate that this partnership will further solidify our position in the automotive infotainment space,” said Jae Geol Pyee, Executive Vice President of Sales & Marketing, System LSI Business at Samsung Electronics. “Through close collaboration with our global customers and ecosystem partners, we will continue to create state-of-the-art automotive chip solutions that offer a safe and enjoyable mobility experience.”

The Exynos Auto V920 is Samsung’s third-generation automotive processor for advanced IVI systems. With considerable upgrades in CPU, graphics and neural processing performance, the V920 will deliver an optimal in-vehicle experience by enabling real-time display of critical driving information, as well as seamless playback of graphics-rich video content and games on multiple displays.

The V920 CPU packs 10 of Arm’s latest cores optimized for autonomous driving, enabling 1.7 times greater processing performance than the previous generation. With support for LPDDR5 memory’s cutting-edge speed, the V920 can efficiently manage up to six high-resolution displays for dashboard, infotainment and rear seat entertainment systems, and up to 12 camera sensors that capture crucial visual information.

Significant improvements have been made to the processor’s graphics and artificial intelligence (AI) performance, enhancing visual presentation on displays and optimizing driver interaction with in-car information. To provide a rich graphical user interface (GUI), the V920 integrates advanced GPU cores with graphics processing capabilities up to two times faster than its predecessor.

By incorporating the latest computing cores, the neural processing unit (NPU) achieves 2.7 times greater performance than the previous generation. This allows the V920 to support enhanced driver monitoring features to better detect the driver’s state and swiftly assess the surroundings, providing an even safer driving environment.

To further bolster driver safety, the V920’s embedded safety island — compliant with Automotive Safety Integrity Level B (ASIL-B) requirements — detects and manages faults in real-time, keeping the IVI system secure.

For more information about Samsung’s Exynos Auto products, please visit https://semiconductor.samsung.com/processor/automotive-processor/.

* The 5G logo on the previous product image has been removed as of June 8th, 2023, to better represent the product’s specification.

What Is a Biometric Card: No More Pin or Signature

An innovative payment card technology called a biometric card offers cardholders a secure and convenient way to authenticate themselves at the point of sale (POS) by using their fingerprint instead of a personal identification number (PIN) or signature. Cardholders don’t need to enter a PIN for high-value transactions, making transactions faster and easier. An added layer of security reduces concerns about the card or PIN theft and increases confidence in using the card, especially when traveling, because you don’t have to worry about fraudulent payments even if your card is stolen or lost.

How It Works: Easy and Safe Transaction

Up to three digital templates of fingers can be added to the card during enrollment and the biometric data is securely stored on the card. Depending on the issuer’s policy, the enrollment can be done at home or at a supervised, in-person location selected by the issuer. In order to make a payment, cardholders can tap or insert their biometric card at a standard EMV point-of-sale terminal with the enrolled finger placed, usually the thumb, on a sensor built into the card. The biometric card instantly verifies the card user’s identity, eliminating the need to enter a PIN. If the biometric match is successful, the card user is authenticated and the transaction proceeds.

Without providing any biometric information to the merchant, a biometric card scans the fingerprint and compares it to the fingerprint templates stored on the card. At the point of sale, the card compares the scanned image to the fingerprint templates stored on it. The enrolled fingerprint template cannot be modified or shared outside the card. The biometric templates are strongly encrypted and protected from unauthorized access to prevent any fraudulent modification. It is not necessary for the biometric data to leave the card because the enrolled templates are not stored by the issuer and the scanned image is not shared with the merchant. As a result, the biometric information is protected and cannot be accessed nor used outside the card.

Solution to Financial Exclusion

Financial inclusion is a priority for the banking industry because many people around the world do not use financial services for a variety of reasons. A biometric payment card can provide a solution to millions of people with learning disabilities, literacy issues or visual impairments, who may struggle with traditional payment methods. Biometric fingerprint authentication can improve financial inclusion for these people by providing a convenient, simple and secure way to use cards to make payments, replacing other common forms of verification such as a written signature or a PIN number.

Samsung Paves the Way for Mainstream Adoption

Biometric identity verification is becoming increasingly preferred for its convenience, and the demand for more robust verification solutions is growing. The main technical obstacle to bringing biometric cards into the mainstream has been reducing production costs while maintaining all the advanced biometric security features. Samsung has found a solution to reduce costs without sacrificing functionality by developing a single-chip through technology integration. The single-chip solution combines Samsung’s proprietary technologies such as the fingerprint sensor, secure processor, secure element and proprietary software to create the industry’s first all-in-one security chip solution for biometric cards.

Samsung’s Biometric Card IC solution makes it easier for banks and other organizations to create and distribute their biometric payment cards. The single chip solution can help card manufacturers reduce the number of chips required and streamline card design processes for biometric payment cards by combining the three essential functions in a single chip. Furthermore, Samsung’s proprietary fingerprint authentication algorithm and anti-spoofing technology enable safer transactions.

Samsung’s new payment solution has the potential to disrupt the previous industry standard and open up a new market growth opportunity due to its performance and design efficiency. According to Gwanbon Koo, Vice President of the Security & Power Product Development Team, “The product positions Samsung as a first mover in the next-generation payment IC market, and Samsung will contribute to the expansion of the biometric card market by presenting a completely new payment experience.”

“Using differentiated process technology, Samsung’s industry-leading 12nm-class DDR5 DRAM delivers outstanding performance and power efficiency,” said Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “Our latest DRAM reflects our continued commitment to leading the DRAM market, not only with high-performance and high-capacity products that meet computing market demand for large-scale processing but also by commercializing next-generation solutions that support greater productivity.”

Compared to the previous generation, Samsung’s new 12nm-class DDR5 DRAM reduces power consumption by up to 23% while enhancing wafer productivity by up to 20%. Its outstanding power efficiency makes it the ideal solution for global IT companies that want to reduce the energy consumption and carbon footprint of their servers and data centers.

Samsung’s development of 12nm-class process technology was made possible thanks to the use of a new high-κ material that helps increase cell capacitance. High capacitance results in a significant electric potential difference in the data signals, which makes it easier to accurately distinguish them. The company’s efforts to lower operating voltage and reduce noise have also helped deliver the optimal solution that customers need.

Boasting a maximum speed of 7.2 gigabits per second (Gbps) — translating into speeds that can process two 30GB UHD movies in about a second — Samsung’s 12nm-class DDR5 DRAM lineup will support a growing list of applications including data centers, artificial intelligence, and next-generation computing.

Samsung completed its 16-gigabit DDR5 DRAM evaluation for compatibility with AMD last December, and continues to collaborate with global IT companies to drive innovation in the next-generation DRAM market.

Samsung Electronics, a world leader in advanced semiconductor technology, today announced its development of the industry’s first 128-gigabyte (GB) DRAM to support Compute Express Link (CXL) 2.0. Samsung worked closely with Intel on this landmark advancement on an Intel® Xeon® platform.

Building on its development of the industry’s first CXL 1.1-based CXL DRAM in May of 2022, Samsung’s introduction of the 128GB CXL DRAM based on CXL 2.0 is expected to accelerate commercialization of next-generation memory solutions. The new CXL DRAM supports PCle 5.0 interface (x8 lanes) and provides bandwidth of up to 35GB per second.

“As a member of the CXL Consortium Board of Directors, Samsung Electronics remains at the forefront of CXL technology,” said Jangseok Choi, vice president of New Business Planning Team at Samsung Electronics. “This breakthrough development underlines our commitment to expanding the CXL ecosystem even further through partnerships with data center, server and chipset companies across the industry.”

“Intel is delighted to work with Samsung on their investment towards a vibrant CXL ecosystem, said Jim Pappas, director of Technology Initiatives at Intel Corporation. Intel will continue to work with Samsung to foster the growth and adoption of innovative CXL products throughout the industry.”

“Montage is excited to mass produce the first controllers to support CXL 2.0,” said Stephen Tai, president of Montage Technology. “We look forward to continuing our partnership with Samsung to advance CXL technology and expand its ecosystem.”

For the first time ever, CXL 2.0 supports memory pooling — a memory management technique that binds multiple CXL memory blocks on a server platform to form a pool and enables hosts to dynamically allocate memory from the pool as needed. The new technology allows customers to maximize efficiency while lowering operating costs, which will in turn help customers reinvest resources into reinforcing their server memory.

Samsung plans to start mass producing CXL 2.0 DRAM later this year and is poised to deliver additional offerings in various capacities to address demand for future computing applications.

CXL is a next-generation interface that adds efficiency to accelerators, DRAM and storage devices used with CPUs in high-performance server systems. Given that its bandwidth and capacity can be expanded when used with the main DRAM, the technology’s advancement is expected to make waves across the next-generation computing market, where key technologies such as artificial intelligence (AI) and machine learning (ML) have led to a rapid rise in demand for high-speed data processing.

One of the highest resolution mobile image sensors in the world — the 200MP — is embedded inside Samsung’s newest flagship device, the Samsung Galaxy S23 Ultra. To prove the true power and detail of its ISOCELL image sensor, Samsung took to the streets of London to showcase photos captured with the 200MP technology in brilliant resolution on one of Europe’s biggest billboards. Check out the video below for behind-the-scenes film from the event.

“There aren’t many locations in the world more iconic and exciting than the bright lights of London’s Piccadilly”, said Annika Bizon of Marketing and Omnichannel at Samsung Electronics U.K. “So where better to demonstrate the power of our Samsung technology while empowering consumers to have fun at the same time? It’s so important to demonstrate in an accessible and imaginative way like this, what innovations can help people really achieve.”

To bring this to life, Samsung placed an old photobooth with the Galaxy S23 Ultra device to capture epic moments using the ISOCELL HP2 image sensor with the 200MP inside the camera — and then shared these on the big screen, showcasing how more pixels can truly mean epic details. Ran Chae of Global Marcom team at Samsung Electronics’ Device Solutions Division explained: “We took the 200MP photos captured in the booth and posted them up on London’s enormous Piccadilly Circus billboard that reaches nearly 700 inches in height, and then zoomed in about 8.5x to show that the photo quality in every pixel remains true to life even when dramatically zoomed in.”

Over 100 content creators that represented diverse communities across the U.K. took part in the event, along with members of the public and competition winners. Each had their photo taken inside the booth, where the advanced 200MP ISOCELL HP2 image sensor captured their epic moment in ultra-high resolution to be shared on the iconic Piccadilly billboard. The photobooth was well attended over the weekend with more than 200 visitors and over 800 photos captured from inside the photobooth across the two days.

Prominent photography creators particularly enjoyed the opportunity to be the subject for once as they tested out the ISOCELL technology. Photographer Chris Priestley — who shared content throughout the event with his 1.3M social followers — explained: “As a photographer, I’m usually behind the camera, so it’s been amazing to be on the other side and to see the sheer quality of the technology on myself.”

People all around the world were eager to take part as their submitted photos displayed in ultra-high resolution on the big screen. Content creators in the U.S., India, China and Germany captured beautiful self-portraits or landscape scenery, which were brought to life on the billboard with 200MP technology. Valentina Pahde, who attended from Germany and shared content with her 844K followers, gushed: “To be photographed in a photobooth and to see my picture in XXL size on the billboard at Piccadilly Circus … I still can’t believe it!”

Alongside the photobooth event, Samsung also ran a photo competition for Galaxy S23 Ultra users in the U.S. and U.K. to drive further buzz on social media. Entrants took to Instagram to #SharetheEpic by capturing a 200MP photo using their Galaxy S23 Ultra device for a chance to see it live on the world-famous billboard. Entrants submitted a variety of images — from landscapes to family and friends, beloved pets and even selfies. Overall, 14 users’ photos were selected from the pre-event competition. Several winners attended in-person to experience the epic details of their 200MP photo live on the big screen, as one shared: “I’m really excited to see what 200MP looks like on the big screen … Wow, that’s my photo — it’s so clear!”

Members of the public were also excited to join Samsung in the photobooth for the chance to see their image shown in magnificent detail on the billboard, with many in awe of the image clarity: “200MP, wow — the quality of the new Samsung Galaxy S23 Ultra camera is incredible — can you send me that?”

Crowds cheered as the ISOCELL-captured images went live in epic details — focusing in on lifelike details in exceptional definition, from hair to freckles. A crowd favorite was when content creator Josh Ryan, who shares lifestyle content on his modelling career, took to the screen: “It was so exciting seeing Josh Ryan in person that I actually stayed around to see him on the big screen. He was so zoomed in — the detail was incredible!” Josh also shared his experience with his 3.6M social followers after the event.

Visitors were thrilled to capture every moment of the event. Technology creator Cadea, who shared an Instagram grid post of the event with her 25K followers, praised the product and experience: “It was incredible to be a part of such an innovative, once in a lifetime experience and to get hands-on with the products — very humbling to see the insane level of detail their cameras can capture on the big screen!”

Consumers on Instagram and TikTok were equally astonished to see the epic details illustrated on the huge billboard, resulting in strong engagement online. Lifestyle creator Fats Timbs, who shared her experience of the event through an Instagram reel, received hundreds of positive comments, including one on the zoomed-in detail of her “lashes” and other close-up details shown on the big screen.

You can check out the images and videos from the event on Instagram and TikTok — or even better, if you are a Galaxy S23 Ultra user, get involved by sharing your own 200MP images with the hashtags #SharetheEpic and #MorePixelsEpicDetails.

“Together with AMD, Samsung has been revolutionizing mobile graphics, including our recent collaboration that brought ray tracing capability to mobile processors for the first time in the industry,” said Seogjun Lee, Executive Vice President of Application Processor (AP) Development at Samsung Electronics. “Drawing on our technological know-how in designing ultra-low-power solutions, we will continue to drive ongoing innovation in the mobile graphics space.”

“We are excited Samsung selected multiple generations of our leadership high-performance Radeon graphics to advance the next generation of Samsung Exynos solutions,” said David Wang, Senior Vice President of the Radeon Technologies Group at AMD. “The extension of our work with Samsung is a testament to our strong technology partnership and commitment to bring the best experiences possible to mobile users.”

Samsung and AMD first announced their partnership to license AMD RDNA graphics architecture in 2019, leading to the co-development of Samsung Xclipse, a mobile graphics processing unit (GPU) based on the AMD RDNA 2 architecture in 2022. Xclipse was the industry’s first mobile GPU with hardware-accelerated ray tracing and variable rate shading features for console-like gameplay on mobile devices.

The image sensor is a smartphone’s key component that determines the quality of photos and videos. Have you ever wondered the use of 200MP image sensors in cutting-edge smartphones like the Galaxy S23 Ultra? The reason for this is that the ultra-high resolution image sensors allow you to capture your epic moment with the epic details. To prove it, Samsung decided to hack the least advanced photobooth in town with a 200MP image sensor and take over one of the world’s most iconic billboards.

Samsung created a specially designed photobooth at a landmark location and installed a 200MP mobile image sensor in the camera so people could see for themselves how powerful ISOCELL sensors can be and how detailed photos taken with these sensors can be. At Piccadilly Circus in London, the photobooth gave those who took pictures a printout that said, “Look up”. When they were leaving the photobooth, they saw the ultra-high resolution photo of themselves displayed on a 45 by 18 meter epic billboard at the Piccadilly Circus. Remarkably, when the photos were zoomed in on the billboard, they showed the quality of 200MP photos — all the lifelike details of their eyes, hair and skin.

Watch the video to see how this was achieved.

“This is my face captured by the 200MP Samsung ISOCELL mobile image sensor and sent straight to the big screens at London’s Piccadilly Circus. This is what smartphones will be capable of,” said GadgetsBoy as attendees discovered the true power of ultra-high resolution cameras and saw for themselves how more pixels in an image sensor means more highly-detailed photos. What’s more, because the experience took place on one of the world’s most iconic billboards, attendees also stated that it was the once-in-a-lifetime moment they had dreamed of and their content went viral on social media.

And now Samsung is bringing the Piccadilly experience back to the huge screen this year with the Galaxy S23 Ultra with ISOCELL HP2. Creators will attend the experiential event and have their photos taken in the photobooth at Piccadilly Circus on April 15 and 16 (GMT). Samsung will also be running a 200MP photo competition in U.S. and U.K., where winners will have their winning ultra-high resolution 200MP photo displayed live on the big screen and a copy of the footage will also be shared with the winners who are unable to attend.

Anyone who owns a Galaxy S23 Ultra and currently lives in the U.S. or U.K. can enter for a chance to be featured on the Piccadilly Circus billboards by simply posting a portrait using Galaxy S23 Ultra on Instagram. Visit the competition website for more information on how to join the competition.

* All images shown may not be an exact representation of the images captured with the product. Some images are digitally enhanced.

The “Beyond Moore” Era: Pushing the Boundaries of Semiconductors

In the past, the technological advancement in the world of semiconductors revolved around who could make smaller transistors and fit more on a single chip. Gordon Moore predicted that the density of transistors on a chip doubles every 24 months — the famous “Moore’s Law”. Although it has gone through some adjustments over history to reflect the speed of technological growth, “Moore’s Law” has been considered the fundamental principle of semiconductor technology development for the last five decades.

Today’s era of smartphones, mobile internet, AI and big data calls for increasingly faster speeds of computing performance. However, the speed of semiconductor innovation and technology advancement has slowed down, and chip miniaturization has reached physical limits, which has caused the speed at which transistors are growing smaller to slow down. In other words, we are now falling behind Moore’s Law.

The market also demands semiconductors to be versatile, encompassing a variety of features such as analog or RF wireless communication in one chip. But as the semiconductor process becomes increasingly miniaturized, it gets increasingly difficult to maintain analog performance. It is indeed becoming difficult to address the needs of the market just through process miniaturization based on Moore’s Law.

In order to overcome these limitations of semiconductor technology, an approach that goes beyond the existing Moore’s Law is required, and we call this “Beyond Moore”.

“Advanced Package, Leading the Beyond Moore Era”

Our answer to the Beyond Moore era is Advanced Package technology. Through advanced Heterogeneous Integration, which connects multiple chips horizontally and vertically, more transistors can be planted on a single chip (or package) and offer performance that is more powerful than the sum of all parts.

According to market research, the CAGR of the advanced packaging industry is estimated at 9.6% growth rate between 2021 and 2027. In fact, 2.5D¹ and 3D packages² implementing heterogeneous integration is expected to show an even higher growth rate of 14%.

Governments are also paying close attention. The South Korean Ministry of Trade, Industry and Energy hosted a forum on semiconductor packaging technology in February, while DARPA (Defense Advanced Research Projects Agency) of the US Department of Defense announced the allocation of a large-scale budget for advanced package-related fields last April. The Japanese government also announced new incentives to attract research centers, as well as establishing a dedicated symposium.

“One-Stop Advanced Package Solution with High Performance and Low Power”

In a bid to address the growing importance of advanced packaging technology, Samsung Electronics established the AVP (AdVanced Package) Business Team under the Device Solutions Division last December to boost the company’s capabilities in advanced packaging technology and maximize the synergy between business units.

Samsung Electronics, with industry-leading expertise in memory, logic foundry and package business, is well-positioned to utilize heterogeneous integration to offer competitive 2.5D and 3D packages that connect state-of-the-art logic semiconductors produced with EUV and high-performance memory semiconductors such as HBM.

The AVP Business Team operates under a business model that provides one-stop advanced package solutions that enable high-performance and low-power solutions. We communicate closely and directly with customers in order to provide solutions tailored to the needs of each customer and product. Our focus areas are the development of next-generation 2.5D and 3D advanced package solutions based on RDL,³ Si Interposer/Bridge⁴ and TSV⁵ stacking technologies.

“Our Future Beyond Connection”

The goal of the AVP Business Team is “hyper-connection” (or “hyper-integration”). “Hyper-connection” is more than a simple sum of the performance and functions of each semiconductor. We envision creating a greater synergy that connects semiconductors to the world, connects people to people and connects customers’ imaginations to reality.

Samsung Electronics is committed to a competitive development and production strategy, with proprietary packaging technology compatible with the large-area trend. Based on customer-oriented business development that ensures prompt responses to customer requests, the AVP Business Team will bring products of imagination to reality.

¹ 2.5D package: A package which integrates a single-layer logic semiconductor and multi-layer memory semiconductor together on a substrate
² 3D package: a package in which multiple logic/memory semiconductors are vertically integrated
³ RDL (Redistribution Layer): Advanced packaging technology that places an extra metal layer in between a small and large circuit board to integrate the two
⁴ Si Interposer/Bridge: The microcircuit board inserted between the IC chip and PCB, which physically connects the chip and board by acting as the mid-level wiring
⁵ TSV (Through Silicon Via): Advanced package technology that grinds the surface of the chip, drills hundreds of microscopic holes and connects the electrodes that vertically penetrate the holes in the top and bottom chips.