“The 1z-based 16Gb LPDDR5 elevates the industry to a new threshold, overcoming a major developmental hurdle in DRAM scaling at advanced nodes,” said Jung-bae Lee, executive vice president of DRAM Product & Technology at Samsung Electronics. “We will continue to expand our premium DRAM lineup and exceed customer demands, as we lead in growing the overall memory market.”

Expanding Manufacturing Capacity in Pyeongtaek Complex

Spanning more than 128,900 square meters (over 1.3 million square feet) – equivalent to about 16 soccer fields – Samsung’s Pyeongtaek Line 2 is the largest-scale semiconductor production line to date.

The new Pyeongtaek line will serve as the key manufacturing hub for the industry’s most advanced semiconductor technologies, delivering cutting-edge DRAM followed by next-generation V-NAND and foundry solutions, while reinforcing the company’s leadership in the Industry 4.0 era.

Fastest, Largest-capacity Mobile Memory

Based on today’s most advanced (1z) process node, Samsung’s new 16Gb LPDDR5 is the first memory to be mass produced using EUV technology, providing the highest speed and largest capacity available in mobile DRAM.

At 6,400 megabits per second (Mb/s), the new LPDDR5 is about 16 percent faster than the 12Gb LPDDR5 (5,500Mb/s) found in most of today’s flagship mobile devices. When made into a 16GB package, the LPDDR5 can transfer about 10 5GB-sized full-HD movies, or 51.2GB of data, in one second.

Thanks to its use of the first commercial 1z process, the LPDDR5 package is 30 percent thinner than its predecessor, enabling 5G and multi-camera smartphones as well as foldable devices to pack more functionality into a slim design. The 16Gb LPDDR5 can build a 16GB package with only eight chips, whereas its 1y-based predecessor requires 12 chips (eight 12Gb chips and four 8Gb chips) to provide the same capacity.

By delivering the first 1z-based 16GB LPDDR5 package to global smartphone makers, Samsung plans to further strengthen its presence in the flagship mobile device market throughout 2021. Samsung will also expand the use of its LPDDR5 offerings into automotive applications, offering an extended temperature range to meet strict safety and reliability standards in extreme environments.

Following the successful mass production of the industry’s first FinFET mobile application processor (AP) in January, 2015, Samsung extends its leadership in delivering leading-edge process technology to the mass market with the latest offering.

“The industry’s first mass production of 10nm FinFET technology demonstrates our leadership in advanced process technology,” said Jong Shik Yoon, Executive Vice President, Head of Foundry Business at Samsung Electronics. “We will continue our efforts to innovate scaling technologies and provide differentiated total solutions to our customers.”

Samsung’s new 10nm FinFET process (10LPE) adopts an advanced 3D transistor structure with additional enhancements in both process technology and design enablement compared to its 14nm predecessor, allowing up to 30-percent increase in area efficiency with 27-percent higher performance or 40-percent lower power consumption. In order to overcome scaling limitations, cutting edge techniques such as triple-patterning to allow bi-directional routing are also used to retain design and routing flexibility from prior nodes.

Following the introduction of Samsung’s first-generation 10nm process (10LPE), its second generation process (10LPP) with performance boost is targeted for mass production in the second half of 2017. The company plans to continue its leadership with a variety of derivative processes to meet the needs of a wide range of applications.

Through close collaboration with customers and partners, Samsung also aims to cultivate a robust 10nm foundry ecosystem that includes reference flow verification, IPs and libraries.

Production level process design kits (PDK) and IP design kits are currently available for design starts.

SoCs with 10nm process technology will be used in digital devices launching early next year and are expected to become more widely available throughout 2017.

The Basics of the DRAM Structure and Scaling

A single DRAM chip contains anywhere from hundreds of millions of cells to billions of them, depending on data capacity. Each cell consists of two parts: a capacitor that stores data in the form of an electrical charge, and a transistor that controls access to it. The two parts are collectively referred to as a DRAM cell. The latest DRAM from Samsung is an 8Gb (gigabit) chip, meaning it has more than 8 billion cells.

The DRAM chip is produced from a very thin silicon board called a “wafer.” As the circuit design and process technology—which are applied to a wafer—become more refined, the wafer is able to produce more chips.

A single 10nm-class DRAM wafer developed by Samsung produces more than 1,000 chips, which is 30 percent more than what could be produced on a 20nm DRAM wafer.

Using the new 10nm-class manufacturing technology, 30 percent more chips can be produced from a single wafer than from a 20nm wafer.

3 Core Technologies Behind Samsung’s 10nm-class DRAM Production

Samsung developed three innovative technologies to successfully mass produce 10nm-class DRAM: Samsung’s proprietary cell design technology, QPT (quadruple patterning technology), and ultra-thin dielectric layer deposition.

QPT Achieves Maximum DRAM Scaling Using Currently Available Photolithography Equipment

With the new 10nm-class DRAM, Samsung became the world’s first semiconductor manufacturer to succeed in applying QPT to DRAM mass production. But what exactly is this technology?

In semiconductor engineering, the core of the business is designing and integrating nanometer-scale circuits onto a small, nail-sized chip. The photolithography process refers to printing electric circuit patterns on a wafer in a way that resembles printing a photo. While a basic photolithography process prints a single pattern, multiple patterning technologies, like double patterning technology (DPT) and QPT, print up to two and four patterns respectively. Multiple patterning is widely used for advanced memory products that require a high level of scaling and density.

In case of the QPT used for Samsung’s 10nm-class DRAM, the photolithography process itself is done once and, after that, many steps are added to realize the QPT, as can be seen in the diagram. As a result of these steps, four patterns can be produced in the same surface area. The whole point of multiple patterning is about drawing more circuit patterns in the same space using currently available photolithography technology, thereby maximizing the wafer productivity.

Ultra-Fine Dielectric Layer Deposition That Insulates Electrical Current

Printing more patterns in the same given space is not the end of the story. A DRAM chip does not function properly if even a single cell—out of hundreds of billions—does not function properly. Therefore, ensuring that all cells work well in a sufficient amount of time is a prerequisite to produce a DRAM chip with high performance and power efficiency. To this end, each and every capacitor (where the electric charges representing data are contained) needs to be thin, long, and sturdy. This is where ultra-fine dielectric layer deposition technology comes in.

Capacitors are used to contain electrical charges (data) temporarily. They can be either charged or discharged to represent the two values of a bit: 1 and 0. When a capacitor contains a sufficient amount of electrons, it can quickly determine the digital signals. Since the manufacturing process only gets more refined, capacitors have to be thinner and longer in order to contain enough electrons.

When constructing a capacitor, it must be covered with a thin but solid dielectric material in order to prevent its electrical charge from leaking and the electrical charges in the surrounding capacitors from causing interference (the space between each capacitor is only a few tens of nanometers). The ability to maintain the uniformity of these dielectric layers is the core technology that determines the quality of the manufacturing and product competitiveness.

With the previous technology for 20nm chips, the dielectric layers were thicker at the top than the bottom, making the capacitors look like upside-down cones. This was not much of a problem. However, as the capacitors and the space between them has become thinner, the dielectric layers have also had to get thinner. To address the problem, Samsung developed a new material through the ultra-fine dielectric deposition technology, successfully making the thickness of the dielectric layers uniform to a few angstroms (tenths of a nanometer). This technical breakthrough allowed the birth of the 10nm-class DRAM with high performance and reliability.

Proprietary Circuit Design Technology That Incorporates All Core Technologies and Reduces Energy Consumption

In general, semiconductors consume more power in proportion to the speed at which they operate. Which is why the increase of speed and reduction of power consumption in the new 10nm-class DRAM is so remarkable.

In an idle state, DRAM consumes less energy than when it is operating in an active state. The 10nm-class DRAM is designed to accelerate its performance in controlling and processing data while in an active state and then go back to an idle state as soon as possible. As a result, the 10nm-class DRAM is both faster and more power efficient when processing data.

More specifically, the 10nm-class DRAM operates at 3.2Gbps on PC and server systems (up from the 2.4Gbps of its predecessor), while reducing power consumption by 10 to 20 percent.

Faster speeds can simply be achieved by consuming more power, but energy efficiency is also a very important factor in any computing system, including PC, mobile and server applications. Because of this, achieving higher performance and reducing power consumption at the same time is essential for DRAM products, which are used in all kinds of advanced computing systems today.

Based on its advancements with the new 10nm-class DRAM technology, Samsung expects to also introduce a 10nm-class mobile DRAM solution this year, which is faster and uses less power than currently available mobile DRAM solutions. The new mobile DRAM solution will be able to support battery-dependent, leading-edge mobile devices with high resolution features such as FHD video (which is currently the most common standard) and 4K UHD videos.

All three of these key technologies together enabled the industry’s first 10nm-class DRAM: QPT to print more patterns at a smaller scale, ultra-fine dielectric layer deposition technology to build thinner and stronger capacitors, and Samsung’s proprietary circuit design technology to achieve high performance and energy efficiency. By combining these novel innovations, Samsung came up with the 10nm-class DRAM solution, improving productivity and guaranteeing a stable supply of next-generation memory products for global IT businesses.

The productivity and speed of 10nm-class DRAM has increased by more than 30 percent compared to 20nm DRAM, while the power consumption has reduced by 10 to 20 percent. Let’s look forward to seeing how Samsung will continue to innovate the premium DRAM market, and facilitate the growth of the PC, server and mobile markets.

* Nano (n) is a prefix that means “one billionth.” For measuring distances, a nanometer is nearly inconceivably tiny, much smaller than the eye can see. For instance, a human hair is approximately 80,000 to 100,000 nanometers (nm) wide.

** Scaling refers to the process of shrinking semiconductor cells, a crucial factor in fabricating ever more powerful semiconductor chips. While memory scaling improves manufacturing productivity, it also contributes to the development of high-performance, energy-saving IT and mobile products with longer battery life and better usability for consumers. Therefore, competition is fierce to reduce every possible nanometer, to break the previous limits and help keep the overall industry growing.