Samsung has shipped more than 70,000 silicon wafers of its first-generation 10nm LPE (Low Power Early) to date. The company began the industry’s first mass production of 10LPE last October.

Back in 2015, Samsung introduced the industry’s first 14nm FinFET LPE technology for mobile applications based on 3D FinFET structure. Since then, Samsung has successfully delivered further enhancements in power, performance and scalability for both 14nm and 10nm FinFET technology.

“Samsung’s 10nm LPE is a game changer in the foundry industry. Following the 10LPE version, the 10nm LPP and LPU will enter mass production by the end of the year and next year, respectively.” said Jongshik Yoon, Executive Vice President and Head of Foundry Business at Samsung Electronics. “We will continue to offer the most competitive process technology in the industry.”

Samsung Electronics has also announced the addition of the 8nm and the 6nm process technologies to its current process roadmap. Samsung’s 8nm and 6nm offerings will provide greater scalability, performance and power advantages when compared to existing process nodes. The 8nm and the 6nm will inherit all innovations from the latest 10nm and the 7nm technologies with design infrastructure enhancements to meet various customer needs and provide further cost competitiveness.

Samsung’s foundry technology roadmap and technical details, including the newest 8nm and the 6nm, will first be open to its customers and partners at the upcoming U.S Samsung Foundry Forum scheduled for May 24, 2017.

Qualcomm Incorporated (NASDAQ: QCOM) today announced that its subsidiary, Qualcomm Technologies, Inc. (QTI),  and Samsung Electronics have extended their decade-long strategic foundry collaboration to manufacture Qualcomm Technologies’ latest Snapdragon premium processor, Qualcomm® Snapdragon 835, with Samsung’s 10-nanometer (nm) FinFET process technology.

The decision to use Samsung’s cutting edge process in the next generation premium processor highlights Qualcomm Technologies’ continued dedication in being the technology leader in mobile platforms.

“We are excited to continue working together with Samsung in developing products that lead the mobile industry,” said Keith Kressin, senior vice president, product management, Qualcomm Technologies. Inc. “Using the new 10nm process node is expected to allow our premium tier Snapdragon 835 processor to deliver greater power efficiency and increase performance while also allowing us to add a number of new capabilities that can improve the user experience of tomorrow’s mobile devices.”

In October, Samsung announced they are the first in the industry to enter mass production of 10nm FinFET technology. Compared to its 14nm FinFET predecessors, Samsung’s 10nm technology allows up to a 30% increase in area efficiency with 27% higher performance or up to 40% lower power consumption. Using 10nm FinFET, the Snapdragon 835 processor will offer a smaller chip footprint, giving OEMs more usable space inside upcoming products to support larger batteries or slimmer designs. Process improvements, combined with a more advanced chip design, are expected to bring significant improvements in battery life.

“We are pleased to have the opportunity to work closely with Qualcomm Technologies in producing the Snapdragon 835 using our 10nm FinFET technology,” said Jong Shik Yoon, Executive Vice President of Foundry Business Team at Samsung Electronics. “This collaboration is an important milestone for our foundry business as it signifies confidence in Samsung’s leading chip process technology”

Snapdragon 835 is in production now and expected to ship in commercial devices in the first half of 2017. Snapdragon 835 follows the Snapdragon 820/21 processor, which has over 200 designs in development.