Using the new memory solution, PC manufacturers can build faster top-of-the-line gaming-oriented laptops with longer battery life at capacities exceeding conventional mobile workstations, while maintaining existing PC configurations.

“Samsung’s 32GB DDR4 DRAM modules will deliver gaming experiences on laptops more powerful and immersive than ever before,” said Sewon Chun, senior vice president of memory marketing at Samsung Electronics. “We will continue to provide the most advanced DRAM portfolios with enhanced speed and capacity for all key market segments including premium laptops and desktops.”

Compared to Samsung’s 16GB SoDIMM based on 20nm-class 8-gigabit (Gb) DDR4, which was introduced in 2014, the new 32GB module doubles the capacity while being 11 percent faster and approximately 39 percent more energy efficient.

With a total of 16 of Samsung’s newest 16-gigabit (Gb) DDR4 DRAM chips (eight chips each mounted on the front and back), the 32GB SoDIMM allows gaming laptops to reach speeds up to 2,666 megabits-per-second (Mbps).

A 64GB laptop configured with two 32GB DDR4 modules consumes less than 4.6 watts (W) in active mode and less than 1.4W when idle. This reduces power usage by approximately 39 percent and over 25 percent, respectively, compared to today’s leading gaming-oriented laptops, which are equipped with 16GB modules.

Samsung has begun to aggressively expand its offering of the industry’s largest 10nm-class DRAM lineup (16Gb LPDDR4, 16Gb GDDR5, and 16Gb DDR4), which will usher in a new era of 16Gb DRAM in the mobile, graphics, PC and server segments, and subsequently in other markets such as supercomputers and automotive systems.

*Editor’s Note: 10nm-class is a process node between 10 and 19 nanometers

Samsung was the first in the industry to begin mass production of system-on-chips (SoCs) products on 10LPE last October. The latest Samsung Galaxy S8 smartphones are powered by some of these SoCs.

To meet long-term demand for the 10nm process for a wide range of customers, Samsung has started installing production equipment at its newest S3-line in Hwaseong, Korea. The S3-line is expected to be ready for production by the fourth quarter of this year.

“With our successful 10LPE production experience, we have commenced production of the 10LPP to maintain our leadership in the advanced-node foundry market,” said Ryan Lee, Vice President of Foundry Marketing at Samsung Electronics. “10LPP will be one of our key process offerings for high performance mobile, computing and network applications, and Samsung will continue to offer the most advanced logic process technology.”

Qualcomm Incorporated (NASDAQ: QCOM) today announced that its subsidiary, Qualcomm Technologies, Inc. (QTI),  and Samsung Electronics have extended their decade-long strategic foundry collaboration to manufacture Qualcomm Technologies’ latest Snapdragon premium processor, Qualcomm® Snapdragon 835, with Samsung’s 10-nanometer (nm) FinFET process technology.

The decision to use Samsung’s cutting edge process in the next generation premium processor highlights Qualcomm Technologies’ continued dedication in being the technology leader in mobile platforms.

“We are excited to continue working together with Samsung in developing products that lead the mobile industry,” said Keith Kressin, senior vice president, product management, Qualcomm Technologies. Inc. “Using the new 10nm process node is expected to allow our premium tier Snapdragon 835 processor to deliver greater power efficiency and increase performance while also allowing us to add a number of new capabilities that can improve the user experience of tomorrow’s mobile devices.”

In October, Samsung announced they are the first in the industry to enter mass production of 10nm FinFET technology. Compared to its 14nm FinFET predecessors, Samsung’s 10nm technology allows up to a 30% increase in area efficiency with 27% higher performance or up to 40% lower power consumption. Using 10nm FinFET, the Snapdragon 835 processor will offer a smaller chip footprint, giving OEMs more usable space inside upcoming products to support larger batteries or slimmer designs. Process improvements, combined with a more advanced chip design, are expected to bring significant improvements in battery life.

“We are pleased to have the opportunity to work closely with Qualcomm Technologies in producing the Snapdragon 835 using our 10nm FinFET technology,” said Jong Shik Yoon, Executive Vice President of Foundry Business Team at Samsung Electronics. “This collaboration is an important milestone for our foundry business as it signifies confidence in Samsung’s leading chip process technology”

Snapdragon 835 is in production now and expected to ship in commercial devices in the first half of 2017. Snapdragon 835 follows the Snapdragon 820/21 processor, which has over 200 designs in development.