Following the memory breakthrough of the automotive industry’s first 128GB eUFS in September, 2017, Samsung’s 256GB eUFS is now being shipped to automotive manufacturers preparing the market for Advanced Driver Assistance Systems (ADAS), next-generation infotainment systems and new-age dashboards in luxury vehicles.

As thermal management is crucial for automotive memory applications, Samsung’s 256GB eUFS extends the temperature range to between -40°C and 105°C for both operational and power-saving modes. Warranties for conventional embedded multimedia card (eMMC) 5.1 solutions generally cover -25°C to 85°C for vehicles in operation and -40°C to 85°C when in idle or power-saving mode,

“With the new temperature threshold for automobile warranties, major automotive manufacturers can now design-in memory that’s even well suited for extreme environments and know they will be getting highly reliable performance,” said Kyoung Hwan Han, vice president of NAND marketing at Samsung Electronics. “Starting with high-end vehicles, we expect to expand our business portfolio across the entire automotive market, while accelerating growth in the premium memory segment.”

Samsung’s 256GB eUFS not only can easily endure the new temperature specification, despite the heat-sensitive nature of memory storage, but also through its temperature notification feature, a sensor will notify the host application processor (AP) when the device temperature exceeds 105°C or any pre-set level. The AP would then regulate its clock speed to lower the temperature to an acceptable level.

Sequential reads for the 256GB eUFS can reach 850 megabytes per second (MB/s), which is at the high end of the current JEDEC UFS 2.1 standard, and random read operations come in at 45,000 IOPS. In addition, a data refresh feature speeds up processing and enables greater system reliability by relocating older data to other less-used cells.

The temperature notification, developed by Samsung, and data refresh features are included in UFS specification, version 3.0, which was announced last month by JEDEC, a global semiconductor standards organization.

Samsung plans to bolster its technology partnerships with global automakers and component providers, and continue expanding its eUFS line-up with an aim to lead the premium memory market.

Samsung Electronics, the world leader in advanced memory technology, today unveiled the industry’s first removable memory cards based on the JEDEC Universal Flash Storage (UFS) 1.0 Card Extension Standard*, for use in high-resolution mobile shooting devices such as DSLRs, 3D VR cameras, action cams and drones. Coming in a wide range of storage capacities including 256, 128, 64 and 32 gigabyte (GB), Samsung’s UFS cards are expected to bring a significant performance boost to the external memory storage market, allowing much more satisfying multimedia experiences.

“Our new 256GB UFS card will provide an ideal user experience for digitally-minded consumers and lead the industry in establishing the most competitive memory card solution,” said Jung-bae Lee, senior vice president, Memory Product Planning & Application Engineering, Samsung Electronics “By launching our new high-capacity, high-performance UFS card line-up, we are changing the growth paradigm of the memory card market to prioritize performance and user convenience above all.”

Samsung’s new 256GB UFS removable memory card ─ simply referred to as the UFS card will provide greatly improved user experiences, especially in high-resolution 3D gaming and high-resolution movie playback. It provides more than five times faster sequential read performance compared to that of a typical microSD card, reading sequentially at 530 megabytes per second (MB/s) which is similar to the sequential read speed of the most widely used SATA SSDs. With this UFS card, consumers have the ability to read a 5GB, Full-HD movie in approximately 10 seconds, compared to a typical UHS-1 microSD card, which would take over 50 seconds with 95MB/s of sequential reading speed. Also, at a random read rate of 40,000 IOPS, the 256GB card delivers more than 20 times higher random read performance compared to a typical microSD, which offers approximately 1,800 IOPS.

When it comes to writing, the new 256GB UFS card processes 35,000 random IOPS, which is 350 times higher than the 100 IOPs of a typical microSD card, and attains a 170MB/s sequential write speed, almost doubling the top-end microSD card speed. With these substantial performance improvements, the new 256GB UFS card significantly reduces multimedia data downloading time, photo thumbnail loading time and buffer clearing time in burst shooting mode, which, collectively, can be particularly beneficial to DSLR camera users. To shoot 24 large/extra fine JPEG photographs (1,120 megabyte (MB)-equivalent) continuously with a high-end DSLR camera, the 256GB UFS card takes less than seven seconds, compared to a UHS-1 microSD card which typically takes about 32 seconds, at 35MB/s.

To achieve the highest performance and most power-efficient data transport, the UFS card supports multiple commands with command queuing features and enables simultaneous reading and writing through the use of separately dedicated paths, doubling throughput.

As the leading memory storage provider, Samsung has been aggressive in preparing UFS solutions for the marketplace, while contributing to JEDEC standardization of the Universal Flash Storage 2.0 specification in September 2013 and the Universal Flash Storage (UFS) 1.0 Card Extension standard in March 2016. Following its introduction of the industry-first 128GB embedded UFS chip in January 2015, the company successfully launched a 256GB embedded UFS memory for high-end mobile devices in February of this year. As of earlier this month, Samsung also completed the Universal Flash Storage Association** (UFSA)’s certification program that evaluates electrical and functional specifications for compatibility of a UFS card, and Samsung’s new UFS card products were approved as UFSA-certified UFS cards with the right to use the official UFS logo for the first time in the industry.

*Samsung has taken a leading role in standardization of JEDEC Universal Flash Storage (UFS) 1.0 Card Standard, and filed seven design patent applications to USPTO (US Patent and Trade Office) which the company disclosed to all JEDEC members under the RAND (reasonable and non-discriminatory licensing) condition that allows manufacturers to develop UFS card products without royalty. Royalty payment usually encompasses a significant portion of other types of removable card manufacturing. For more information, please visit http://www.jedec.org/news/pressreleases/jedec-publishes-universal-flash-storage-ufs-removable-card-standard/

**UFSA announced the release of a Universal Flash Storage (UFS) Compliance Test Matrix (CTM) in April, 2016. For more information, please visit https://ufsa.org/

Samsung Electronics, the world leader in advanced memory technology, announced that it is now mass producing the industry’s first 256-gigabyte (GB) embedded memory based on the Universal Flash Storage (UFS) 2.0 standard, for next-generation high-end mobile devices. The newly introduced embedded memory features outstanding performance for mobile devices that exceeds that of a typical SATA-based SSD for PCs.

“By providing high-density UFS memory that is nearly twice as fast as a SATA SSD for PCs, we will contribute to a paradigm shift within the mobile data storage market,” said Joo Sun Choi, Executive Vice President, Memory Sales and Marketing, Samsung Electronics. “We are determined to push the competitive edge in premium storage line-ups – OEM NVMe SSDs, external SSDs, and UFS – by moving aggressively to enhance performance and capacity in all three markets.”

The new Samsung UFS memory satisfies needs for ultra-fast speed, large data capacity and compact chip size in high-end smartphones. It is based on the company’s most advanced V-NAND flash memory chips and a specially-designed high-performance controller. The UFS memory handles up to 45,000 and 40,000 input/output operations per second (IOPS) for random reading and writing respectively, over two times faster than the 19,000 and 14,000 IOPS of the previous generation of UFS memory.

For sequential reading, the 256GB UFS takes advantage of two lanes of data transfer to move data at up to 850MB/s, which is nearly twice as fast as a typical SATA-based SSD used in PCs. In terms of sequential writing, it supports up to 260MB/s, which is approximately three times faster than high-performance external micro SD cards.

As a result, the new 256GB UFS memory is capable of supporting seamless Ultra HD video playback and multitasking functionality on large-screen mobile devices, such as watching 4K Ultra HD movies on a split screen, while searching image files or downloading video clips. Its 256GB capacity also allows an unmatched amount of data storage on the mobile device itself. For example, one 256GB UFS chip can store about 47 full HD movies, therefore enabling much greater flexibility in handheld consumer electronics.

In addition, with the advent of next-generation smartphones that support the USB 3.0 interface, users will be able to transfer data much faster between mobile devices. The USB 3.0 interface will allow sending a 5GB-equivalent Full-HD video clip (average 90-min. movie size) in 12 seconds. Within this new storage environment, mobile users will get to take full advantage of the performance benefits of Samsung’s latest UFS memory.

Using Samsung’s advanced memory technology, the new UFS memory chips are extremely compact, even smaller than an external micro SD card, giving greater flexibility to smartphone designers.

Samsung announced availability of its 128GB UFS memory in February of last year. In only a year, it has doubled the capacity and speed of UFS memory, which should spur further growth of the mobile marketplace. Samsung will extend its premium storage line-ups that are based on its advanced V-NAND flash memory including the new 256GB UFS, and increase their production volume in line with increases in global demand.