Samsung Electronics, the world leader in advanced memory technology, today announced that it has launched an 800-gigabyte (GB) solid state storage drive—the SZ985 Z-SSD, for the most advanced enterprise applications including supercomputing for AI analysis.

Developed in 2017, the new 800GB Z-SSD provides the most efficient storage solution for high-speed cache data and log data processing, as well as other enterprise storage applications that are being designed to meet rapidly growing demand within the AI, big data and IoT markets.

“With our leading-edge 800GB Z-SSD, we expect to contribute significantly to market introductions of next-generation supercomputing systems in the near future, enabling improved IT investment efficiency and exceptional performance,” said Jinman Han, senior vice president, Memory Product Planning & Application Engineering at Samsung Electronics. “We will continue to develop next-generation Z-SSDs with higher density and greater product competitiveness, in order to lead the industry in accelerating growth of the premium SSD* market.”

The new single port, four-lane Z-SSD features Z-NAND chips that provide 10 times higher cell read performance than 3-bit V-NAND chips, along with 1.5GB LPDDR4 DRAM and a high performance controller. Armed with some of the industry’s most advanced components, the 800GB Z-SSD features 1.7 times faster random read performance at 750K IOPS, and five times less write latency – at 16 microseconds, compared to an NVMe SSD PM963, which is based on 3-bit V-NAND chips. The Z-SSD also delivers a random write speed of up to170K IOPS.

Due to its high reliability, the 800GB Z-SSD guarantees up to 30 drive writes per day (DWPD) for five years, or a total of 42 petabytes. That translates into storing a total of about 8.4 million 5GB-equivalent full-HD movies during a five-year period. The reliability of the new Z-SSD is further underscored by a mean time between failures (MTBF) of two million hours.

Samsung will introduce its new Z-SSD in 800GB and 240GB versions, as well as related technologies at ISSCC 2018 (International Solid-State Circuits Conference), which will be held February 11-15 in San Francisco.

Note: All brand, product, service names and logos are trademarks and/or registered trademarks of their respective owners and are hereby recognized and acknowledged. Z-SSD is a trademark of Samsung Electronics Co., Ltd.

* Editor’s Note: The premium SSD means an SSD with IOPs exceeding 550K for random reads, and latency lower than 20us.

Samsung Electronics, the world leader in advanced memory technology, unveiled the 850 EVO M.2 and 850 EVO mSATA solid state drive (SSD) lineups, which will launch today in 53 countries. The 850 EVO M.2 and mSATA SSDs are new form factors of the award-winning 850 EVO SSD that launched in December 2014 and features Samsung’s breakthrough 3D V-NAND technology for maximum performance and endurance. Just one-tenth the weight of a traditional 2.5-inch SSD, the M.2 and mSATA SSDs are ideal for users looking to upgrade their desktop or ultrathin PCs with high-capacity, high-performance storage.

“By offering the 850 EVO in multiple form factors, Samsung is giving every PC user the opportunity to upgrade their device with the speed, reliability and endurance of 3D V-NAND,” said Unsoo Kim, Senior vice president of branded product marketing team, Samsung Electronics. “There is growing demand for high-capacity SSDs and these new form factors will help drive further adoption of SSDs as well as expand Samsung’s leadership position in the consumer storage market.”

In December, Samsung unveiled the 850 EVO featuring 3-bit 3D V-NAND technology, which greatly enhanced the everyday computing experience by overcoming the density limitations of conventional planar NAND architecture. 3D V-NAND stacks 32 cell layers vertically over one another, rather than decreasing cell dimensions to fit onto a fixed horizontal space, resulting in higher density and better performance with a smaller footprint. Now, with the M.2 and mSATA form factor SSDs, more consumers with desktops or ultrathin PCs can benefit from best-in-class performance and reliability of the 850 EVO and V-NAND technology.

The Samsung 850 EVO mSATA comes in 1 terabyte (TB), 500 gigabyte (GB), 250GB and 120GB capacities and boasts the same top-notch read/write speeds as the 2.5-inch 850 EVO, with read speeds of up to 540 megabytes per second (MB/s) and write speeds of up to 520 MB/s. The 850 EVO M.2 will be available in 500GB, 250GB and 120GB capacities, offer read speeds of up to 540 MB/s and write speeds of up to 500MB/s.

Each drive manages large data transfers and complex multi-tasking operations using the Samsung TurboWrite technology. Featuring the TurboWrite technology, the 500GB and 1TB models offer random write speeds up to of 88K Input/Output Operations Per Second (IOPS), and random read speeds of up to 97K IOPS, meaning each drive is able to easily manage large data transfers and handle complex multi-tasking operations.

Similar to the 2.5-inch 850 EVO, the M.2 and mSATA drives offer enhanced reliability with improved sustained performance, as well as AES 256-bit hardware-based encryption to ensure the safety and security of data.

The Samsung M.2 and mSATA 850 EVO SSDs have a five-year limited warranty and an endurance rating of 150 total bytes written (TBW) for the 500GB and above capacities.