Based on Samsung Foundry’s 7LPP (7nm Low Power Plus) and 5LPE (5nm Low Power Early) process technologies, the Arm® Artisan® physical IP platform will enable 3GHz+ computing performance for Arm’s Cortex®-A76 processor.

Samsung’s 7LPP process technology will be ready for its initial production in the second half of 2018. The first extreme ultra violet (EUV) lithography process technology, and its key IPs, are in development and expected to be completed by the first half of 2019. Samsung’s 5LPE technology will allow greater area scaling and ultra-low power benefits due to the latest innovations in 7LPP process technology.

The Arm Artisan physical IP platform for Samsung’s 7LPP and 5LPE includes HD logic architecture, a comprehensive suite of memory compilers, and 1.8V and 3.3V GPIO libraries. In addition, for Samsung’s 7LPP and 5LPE process technologies, Arm will provide Artisan POP IP solutions on its latest processor cores featuring Arm DynamIQ technology. Arm’s POP IP solution is a core-hardening acceleration technology to enable the best Arm processor implementations and the most rapid time-to-market.

“Building an extensive and differentiated design ecosystem is a must for our foundry customers,” said Ryan Sanghyun Lee, vice president of Foundry Marketing Team at Samsung Electronics. “Collaboration with Arm in the fields of IP solutions is crucial to increase high-performance computing power and accelerate the growth of Artificial Intelligence (AI) and Machine Learning capabilities.”

“Arm and Samsung Foundry have collaborated on a large number of chips using Artisan physical IP on Samsung Foundry process technologies,” said Kelvin Low, vice president of marketing, Physical Design Group at Arm. “Samsung Foundry’s 7LPP and 5LPE nodes are innovative process technologies which will meet our mutual customers’ needs to deliver the next generation of advanced system-on-chips (SoCs) from mobile to hyperscale datacenters.”

Details of the recent updates to Samsung’s Foundry roadmap, from 7nm EUV development to 3GAAE (3nm Gate-All-Around Early) technology, and top-notch design enablement solutions were presented at Samsung Foundry Forum 2018 Korea on July 5, 2018, in Seoul. Samsung Foundry Forums were held in the United States and China earlier this year, sharing Samsung’s cutting-edge process technologies with global customers and partners.

For more information about Samsung Foundry, please visit www.samsungfoundry.com.

With comprehensive process technology roadmap updates down to 3-nanometer (nm) at the annual ‘Samsung Foundry Forum (SFF) 2018 USA’, Samsung Foundry is focused on providing customers with the tools necessary to design and manufacture powerful, yet energy-efficient system-on-chips (SoC) for a wide range of applications.

“The trend toward a smarter, connected world has the industry demanding more from silicon providers,” said Charlie Bae, executive vice president and head of the Foundry Sales & Marketing Team at Samsung Electronics. “To meet that demand, Samsung Foundry is powering innovation at the silicon level that will ultimately give people access to data, analysis, and insight in new and previously unthought-of ways to make human lives better. It is imperative for us to accomplish the first-time silicon success for our customers’ next-generation chip designs.”

Process Technology Roadmap Updates

• 7LPP (7nm Low Power Plus): 7LPP, the first semiconductor process technology to use an EUV lithography solution, is scheduled to be ready for production in the second half of this year. Key IPs are under development, aiming to be completed by the first half of 2019.

• 5LPE (5nm Low Power Early): Through further smart innovation from the 7LPP process, 5LPE will allow greater area scaling and ultra-low power benefits.

• 4LPE/LPP (4nm Low Power Early/Plus): The use of highly mature and verified FinFET technology will be extended to the 4nm process. As the last generation of FinFET, 4nm provides a smaller cell size, improved performance, and faster ramp-up to the stable level of yield by adopting proven 5LPE, supporting easy migration.

• 3GAAE/GAAP (3nm Gate-All-Around Early/Plus): 3nm process nodes adopt GAA, the next-generation device architecture. To overcome the physical scaling and performance limitations of the FinFET architecture, Samsung is developing its unique GAA technology, MBCFET^TM (Multi-Bridge-Channel FET) that uses a nano-sheet device. By enhancing the gate control, the performance of 3nm nodes will be significantly improved.

HPC (High-Performance Computing) Solutions

Samsung Foundry delivers the technology solutions to drive the latest hyper-scale datacenters and accelerate the growth of Artificial Intelligence (AI) and Machine Learning capability. From the latest 7LPP technology and beyond with its EUV capability, to the differentiated high-speed IPs such as 100Gbps+ SerDes on top of the innovative 2.5D/3D heterogeneous packaging, Samsung delivers the total platform solutions to greatly increase computing power and accelerate AI revolution.

Connected Device Solutions

From low-power microcontroller units (MCU) and next-generation connected devices to the most sophisticated autonomous vehicles based on 5G and Vehicle to Everything (V2X) communication, Samsung Foundry offers full-featured turnkey platforms to enable compelling products. A broad technology portfolio from 28/18 FD-SOI with eMRAM and RF capability to advanced 10/8nm FinFET processes will enable a great end-user experience for connected devices.

Mr. Bae continued, “Over the past year, we have focused on strengthening our EUV process portfolio to provide each of our customers with the finest technologies. Applying GAA structure to our next generation process node will enable us to take the lead in opening a new smart, connected world, while also to reinforcing our technology leadership.”

Details regarding Samsung Foundry can be found at www.samsungfoundry.com and www.linkedin.com/company/samsungfoundry.