Samsung Electronics, a world leader in advanced semiconductor technology, today announced that it has completed all process technology development and has started wafer production of its revolutionary process node, 7LPP, the 7-nanometer (nm) LPP (Low Power Plus) with extreme ultraviolet (EUV) lithography technology. The introduction of 7LPP is a clear demonstration of Samsung Foundry’s technology roadmap evolution and provides customers with a definite path to 3nm.

The commercialization of its newest process node, 7LPP gives customers the ability to build a full range of exciting new products that will push the boundaries of applications such as 5G, Artificial Intelligence, Enterprise and Hyperscale Datacenter, IoT, Automotive, and Networking.

“With the introduction of its EUV process node, Samsung has led a quiet revolution in the semiconductor industry,” said Charlie Bae, executive vice president of foundry sales and marketing team at Samsung Electronics. “This fundamental shift in how wafers are manufactured gives our customers the opportunity to significantly improve their products’ time to market with superior throughput, reduced layers, and better yields. We’re confident that 7LPP will be an optimal choice not only for mobile and HPC, but also for a wide range of cutting-edge applications.”

The Characteristics and Benefits of EUV Technology

EUV uses 13.5nm wavelength light to expose silicon wafers as opposed to conventional argon fluoride (ArF) immersion technologies that are only able to achieve 193nm wavelengths and require expensive multi-patterning mask sets. EUV enables the use of a single mask to create a silicon wafer layer where ArF can require up to 4 masks to create that same layer. Consequently Samsung’s 7LPP process can reduce the total number of masks by about 20% compared to non-EUV process, enabling customers to save time and cost.

The EUV lithography improvements also deliver increased performance, lower power and smaller area while improving design productivity by reducing mulit-patterning complexity. Compared to its 10nm FinFET predecessors, Samsung’s 7LPP technology not only greatly reduces the process complexity with fewer layers and better yields, but also delivers up to a 40% increase in area efficiency with 20% higher performance or up to 50% lower power consumption.

The Road to EUV Technology

Since Samsung’s research and development in EUV began in the 2000s, the company has made outstanding progress through collaborative partnerships with industry-leading tool providers to design and install completely new equipment in its manufacturing facilities to ensure the stability of EUV wafers. The initial EUV production has started in Samsung’s S3 Fab in Hwaseong, Korea.

By 2020, Samsung expects to secure additional capacity with a new EUV line for customers who need high-volume manufacturing for next-generation chip designs. As an EUV pioneer, Samsung has also developed proprietary capabilities such as a unique mask inspection tool that performs early defect detection in EUV masks, allowing those defects to be eliminated early in the manufacturing cycle.

“Commercialization of EUV technology is a revolution for the semiconductor industry and will have a huge impact on our everyday lives,” said Peter Jenkins, vice president of corporate marketing at ASML. “It is our great pleasure to collaborate with Samsung and other leading chip makers on this fundamental shift in semiconductor process manufacturing.”

7nm LPP EUV Ecosystem

The Samsung Advanced Foundry Ecosystem is also fully prepared for the introduction of 7LPP with EUV. Ecosystem partners across the industry will be providing Foundation and Advanced IP, Advanced Packaging, and Services to fully enable Samsung customers to develop their products on this new platform.  From high-performance and high-density standard cells to HBM2/2e memory interfaces and 112G SerDes interfaces, SAFE is ready to help customers implement their designs on 7LPP.

Following its US, China, Korea, and Japan events, Samsung will hold the year’s final Foundry Forum on October 18, in Munich, Germany for European customers and partners. For more information about Samsung Foundry, please visit https://www.samsungfoundry.com.

Semiconductors’ high performance and low power characteristics depend on the width of the circuits that are inserted into the chips’ limited space. In this sense, EUV realizes more detailed semiconductor circuit pattern than the existing argon fluoride (ArF) wavelength and reduces complex multi-patterning process, securing both high performance and productivity.

The EUV technology by Samsung is expected to accelerate the growth of various revolutionary products such as 5G, Artificial Intelligence and Internet of Things. Take a look at the infographic to learn more about EUV and how it is expected to contribute to the advancement of semiconductor technology.

With comprehensive process technology roadmap updates down to 3-nanometer (nm) at the annual ‘Samsung Foundry Forum (SFF) 2018 USA’, Samsung Foundry is focused on providing customers with the tools necessary to design and manufacture powerful, yet energy-efficient system-on-chips (SoC) for a wide range of applications.

“The trend toward a smarter, connected world has the industry demanding more from silicon providers,” said Charlie Bae, executive vice president and head of the Foundry Sales & Marketing Team at Samsung Electronics. “To meet that demand, Samsung Foundry is powering innovation at the silicon level that will ultimately give people access to data, analysis, and insight in new and previously unthought-of ways to make human lives better. It is imperative for us to accomplish the first-time silicon success for our customers’ next-generation chip designs.”

Process Technology Roadmap Updates

• 7LPP (7nm Low Power Plus): 7LPP, the first semiconductor process technology to use an EUV lithography solution, is scheduled to be ready for production in the second half of this year. Key IPs are under development, aiming to be completed by the first half of 2019.

• 5LPE (5nm Low Power Early): Through further smart innovation from the 7LPP process, 5LPE will allow greater area scaling and ultra-low power benefits.

• 4LPE/LPP (4nm Low Power Early/Plus): The use of highly mature and verified FinFET technology will be extended to the 4nm process. As the last generation of FinFET, 4nm provides a smaller cell size, improved performance, and faster ramp-up to the stable level of yield by adopting proven 5LPE, supporting easy migration.

• 3GAAE/GAAP (3nm Gate-All-Around Early/Plus): 3nm process nodes adopt GAA, the next-generation device architecture. To overcome the physical scaling and performance limitations of the FinFET architecture, Samsung is developing its unique GAA technology, MBCFET^TM (Multi-Bridge-Channel FET) that uses a nano-sheet device. By enhancing the gate control, the performance of 3nm nodes will be significantly improved.

HPC (High-Performance Computing) Solutions

Samsung Foundry delivers the technology solutions to drive the latest hyper-scale datacenters and accelerate the growth of Artificial Intelligence (AI) and Machine Learning capability. From the latest 7LPP technology and beyond with its EUV capability, to the differentiated high-speed IPs such as 100Gbps+ SerDes on top of the innovative 2.5D/3D heterogeneous packaging, Samsung delivers the total platform solutions to greatly increase computing power and accelerate AI revolution.

Connected Device Solutions

From low-power microcontroller units (MCU) and next-generation connected devices to the most sophisticated autonomous vehicles based on 5G and Vehicle to Everything (V2X) communication, Samsung Foundry offers full-featured turnkey platforms to enable compelling products. A broad technology portfolio from 28/18 FD-SOI with eMRAM and RF capability to advanced 10/8nm FinFET processes will enable a great end-user experience for connected devices.

Mr. Bae continued, “Over the past year, we have focused on strengthening our EUV process portfolio to provide each of our customers with the finest technologies. Applying GAA structure to our next generation process node will enable us to take the lead in opening a new smart, connected world, while also to reinforcing our technology leadership.”

Details regarding Samsung Foundry can be found at www.samsungfoundry.com and www.linkedin.com/company/samsungfoundry.

With this new EUV line, Samsung will be able to strengthen its leadership in single nanometer process technology by responding to market demand from various applications, including mobile, server, network, and HPC (high performance computing), for which high performance and power efficiency are critical.

The new facility is expected to be completed within the second half of 2019 and start production ramp-up in 2020. The initial investment in the new EUV line is projected to reach USD 6 billion by 2020 and additional investment will be determined depending on market circumstances.

Kinam Kim, President & CEO of Device Solutions at Samsung Electronics, gives a speech at the groundbreaking ceremony for Samsung’s new EUV (extreme ultraviolet) line in Hwaseong, Korea.

“With the addition of the new EUV line, Hwaseong will become the center of the company’s semiconductor cluster spanning Giheung, Hwaseong and Pyeongtaek in Korea,” said Kinam Kim, President & CEO of Device Solutions at Samsung Electronics. “The line will play a pivotal role as Samsung seeks to maintain a competitive edge as an industry leader in the coming age of the Fourth Industrial Revolution.”

Samsung has decided to utilize cutting-edge EUV technology starting with its 7-nanometer (nm) LPP (Low Power Plus) process. This new line will be set up with EUV lithography equipment to overcome nano-level technology limitations. Samsung has continued to invest in EUV R&D to support its global customers for developing next-generation chips based on this leading-edge technology.

Samsung Electronics Hwaseong Campus EUV line bird’s eye view

Using 7LPP EUV process technology, Snapdragon 5G mobile chipsets will offer a smaller chip footprint, giving OEMs more usable space inside upcoming products to support larger batteries or slimmer designs. Process improvements, combined with a more advanced chip design, are expected to bring significant improvements in battery life.

Last May, Samsung introduced 7LPP EUV, its first semiconductor process technology to use an EUV lithography solution. It is anticipated that EUV lithography deployment will break the barriers of Moore’s law scaling, paving the way for single nanometer semiconductor technology generations.

Compared with its 10nm FinFET predecessors, Samsung’s 7LPP EUV technology not only greatly reduces the process complexity with fewer process steps and better yield, but also allows up to a 40 percent increase in area efficiency with 10 percent higher performance or up to 35 percent lower power consumption.

“We are excited to lead the 5G mobile industry together with Samsung,” said RK Chunduru, senior vice president, supply chain and procurement, Qualcomm Technologies, Inc. “Using 7nm LPP EUV, our new generation of Snapdragon 5G mobile chipsets will take advantage of the process improvements and advanced chip design to improve the user experience of future devices.”

“We are pleased to continue to expand our foundry relationship with Qualcomm Technologies in 5G technologies using our EUV process technology,” said Charlie Bae, Executive Vice President of Foundry Sales and Marketing Team at Samsung Electronics. “This collaboration is an important milestone for our foundry business as it signifies confidence in Samsung’s leading process technology.”

Samsung Electronics’ Foundry manufacturing line located in Hwaseong, Korea