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		<title>DDR4 DRAM &#8211; Samsung Global Newsroom</title>
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            <title>DDR4 DRAM &#8211; Samsung Global Newsroom</title>
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		<description>What's New on Samsung Newsroom</description>
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				<title>Samsung Begins Mass Production of Comprehensive Automotive Memory Solutions for Next-Generation Autonomous Electric Vehicles</title>
				<link>https://news.samsung.com/global/samsung-begins-mass-production-of-comprehensive-automotive-memory-solutions-for-next-generation-autonomous-electric-vehicles</link>
				<pubDate>Thu, 16 Dec 2021 11:00:24 +0000</pubDate>
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				<dc:creator><![CDATA[Samsung Newsroom]]></dc:creator>
						<category><![CDATA[More Products]]></category>
		<category><![CDATA[Press Release]]></category>
		<category><![CDATA[Semiconductors]]></category>
		<category><![CDATA[AEC-Q100]]></category>
		<category><![CDATA[Automotive]]></category>
		<category><![CDATA[automotive processors]]></category>
		<category><![CDATA[Autonomous driving technology]]></category>
		<category><![CDATA[Autonomous Electric Vehicles]]></category>
		<category><![CDATA[BGA SSD]]></category>
		<category><![CDATA[DDR4 DRAM]]></category>
		<category><![CDATA[GDDR6 DRAM]]></category>
		<category><![CDATA[Graphics DRAM]]></category>
		<category><![CDATA[high-performance SSDs]]></category>
		<category><![CDATA[PCIe Gen3 NVMe BGA SSD]]></category>
		<category><![CDATA[Samsung Automotive Semiconductors]]></category>
		<category><![CDATA[UFS]]></category>
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									<description><![CDATA[Samsung Electronics, the world leader in advanced memory technology, today unveiled an extensive lineup of cutting-edge automotive memory solutions designed for next-generation autonomous electric vehicles. The new lineup includes a 256-gigabyte (GB) PCIe Gen3 NVMe ball grid array (BGA) SSD, 2GB GDDR6 DRAM and 2GB DDR4 DRAM for high-performance infotainment systems, as well as 2GB […]]]></description>
																<content:encoded><![CDATA[<p>Samsung Electronics, the world leader in advanced memory technology, today unveiled an extensive lineup of cutting-edge automotive memory solutions designed for next-generation autonomous electric vehicles. The new lineup includes a 256-gigabyte (GB) PCIe Gen3 NVMe ball grid array (BGA) SSD, 2GB GDDR6 DRAM and 2GB DDR4 DRAM for high-performance infotainment systems, as well as 2GB GDDR6 DRAM and 128GB Universal Flash Storage (UFS) for autonomous driving systems.</p>
<p>“With the recent proliferation of electric vehicles and the rapid advancement of infotainment and autonomous driving systems, the semiconductor automotive platform is facing a paradigm shift. What used to be a seven to eight-year replacement cycle is now being compressed into a three to four-year cycle, and at the same time, performance and capacity requirements are advancing to levels commonly found in servers,” said Jinman Han, Executive Vice President and Head of Memory Global Sales & Marketing at Samsung Electronics. “Samsung’s reinforced lineup of memory solutions will act as a major catalyst in further accelerating the shift toward the ‘Server on Wheels’ era.”</p>
<p>Advanced features in infotainment systems such as high-definition maps, video streaming and 3D gaming, together with the growing use of autonomous driving systems, have been driving the demand for high-capacity, high-performance SSDs and graphics DRAM throughout the automotive industry.</p>
<p><img class="alignnone size-full wp-image-129326" src="https://img.global.news.samsung.com/global/wp-content/uploads/2021/12/Samsung_Automotive_Memory_main1.jpg" alt="" width="1000" height="429" /></p>
<p>In 2017, Samsung was the first in the industry to introduce UFS solutions for automotive applications. Today, the company is well-positioned to provide a total memory solution with the new automotive SSD and GDDR6 DRAM.</p>
<p>Samsung’s 256GB BGA SSD controller and firmware are developed in-house for optimized performance, offering a sequential read speed of 2,100 megabytes per second (MB/s) and a sequential write speed of 300MB/s, which are seven and two times faster than today’s eMMC, respectively. Furthermore, the 2GB GDDR6 DRAM features up to a 14 gigabit-per-second (Gbps) data rate per pin. Such exceptional speeds and bandwidth will support complex processing of various multimedia applications as well as large amounts of autonomous driving data, contributing to a safer, more dynamic and more convenient driving experience.</p>
<p>In addition, Samsung’s new automotive solutions meet the AEC-Q100 qualification — the global automotive reliability standard — allowing them to operate stably in extreme temperatures ranging from -40°C to +105°C, which is an especially crucial requirement for automotive semiconductors.</p>
<p>Recently, sensor deployment in autonomous vehicles to continuously monitor immediate surroundings has been increasing, and high-speed processing to interpret and predict this data for safer driving is becoming critically important. By introducing automotive memory solutions previously championed in servers and AI accelerators, Samsung is helping to pave the way for safer autonomous driving.</p>
<p>Having already completed customer evaluations, the new automotive memory products are currently in mass production.</p>
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				<title>Samsung Develops Industry’s First 3rd-generation 10nm-Class DRAM for Premium Memory Applications</title>
				<link>https://news.samsung.com/global/samsung-develops-industrys-first-3rd-generation-10nm-class-dram-for-premium-memory-applications</link>
				<pubDate>Thu, 21 Mar 2019 11:00:39 +0000</pubDate>
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				<dc:creator><![CDATA[Samsung Newsroom]]></dc:creator>
						<category><![CDATA[Press Release]]></category>
		<category><![CDATA[Semiconductors]]></category>
		<category><![CDATA[10nm-class DRAM]]></category>
		<category><![CDATA[1z-nm 8Gb DDR4]]></category>
		<category><![CDATA[1z-nm DRAM]]></category>
		<category><![CDATA[8Gb DDR4]]></category>
		<category><![CDATA[DDR4]]></category>
		<category><![CDATA[DDR4 DRAM]]></category>
		<category><![CDATA[Premium Memory Applications]]></category>
		<category><![CDATA[Semiconductors Leadership]]></category>
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									<description><![CDATA[Samsung Electronics, the world leader in advanced memory technology, today announced that it has developed a 3rd-generation 10-nanometer-class (1z-nm) eight-gigabit (Gb) Double Data Rate 4 (DDR4) DRAM for the first time in the industry. In just 16 months since it began mass producing the 2nd-generation 10nm-class (1y-nm) 8Gb DDR4, development of 1z-nm 8Gb DDR4 without […]]]></description>
																<content:encoded><![CDATA[<p>Samsung Electronics, the world leader in advanced memory technology, today announced that it has developed a 3rd-generation 10-nanometer-class (1z-nm) eight-gigabit (Gb) Double Data Rate 4 (DDR4) DRAM for the first time in the industry. In just 16 months since it began mass producing the 2nd-generation 10nm-class (1y-nm) 8Gb DDR4, development of 1z-nm 8Gb DDR4 without the use of Extreme Ultra-Violet (EUV) processing has pushed the limits of DRAM scaling even further.</p>
<p>As 1z-nm becomes the industry’s smallest memory process node, Samsung is now primed to respond to increasing market demands with its new DDR4 DRAM that has more than 20-percent higher manufacturing productivity compared to the previous 1y-nm version.</p>
<p>Mass production of the 1z-nm 8Gb DDR4 will begin within the second half of this year to accommodate next-generation enterprise servers and high-end PCs expected to be launched in 2020.</p>
<p>“Our commitment to break through the biggest challenges in technology has always driven us toward greater innovation. We are pleased to have laid the groundwork again for stable production of next-generation DRAM that ensures the highest performance and energy efficiency,” said Jung-bae Lee, executive vice president of DRAM product & technology, Samsung Electronics. “As we build out our 1z-nm DRAM lineup, Samsung is aiming to support its global customers in their deployment of cutting-edge systems and enabling proliferation of the premium memory market.”</p>
<p>Samsung’s development of the 1z-nm DRAM paves the way for an accelerated global IT transition to next-generation DRAM interfaces such as DDR5, LPDDR5 and GDDR6 that will power a wave of future digital innovation. Subsequent 1z-nm products with higher capacities and performance will allow Samsung to strengthen its business competitiveness and solidify its leadership in the premium DRAM market for applications that include servers, graphics and mobile devices.</p>
<p>Following a full validation with a CPU manufacturer for eight-gigabyte (GB) DDR4 modules, Samsung will be actively collaborating with global customers to deliver an array of upcoming memory solutions.</p>
<p>In line with current industry needs, Samsung plans to increase the portion of its main memory production at its Pyeongtaek site, while working with its global IT clients to meet the rising demand for state-of-the-art DRAM products.</p>
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