Samsung Electronics, a world leader in advanced semiconductor technology, today hosted Samsung Foundry Forum (SFF) 2023 Europe and unveiled its advanced and wide ranging automotive process solutions, from the most advanced 2-nanometer process to the 8-inch legacy process.

Alongside its customers and Samsung Advanced Foundry Ecosystem (SAFE) partners, Samsung Electronics showcased the latest technological trends and its business strategy tailored to the European market.

“Samsung Foundry is driving innovation in next-generation solutions to build an expanded portfolio that meets the growing needs of our automotive customers, especially as the era of electric vehicles becomes a reality,” said Dr. Siyoung Choi, President and Head of Foundry Business at Samsung Electronics. “We are strengthening our readiness to provide customers with distinguished service across a variety of solutions, including power semiconductors, microcontrollers and advanced AI chips for autonomous driving.”

Since participating in IAA Mobility 2023 for the first time in September, Samsung Electronics is strengthening engagement and partnership in specialty processes for automotive customers in the European market, further solidifying its status as a leading foundry partner for the industry.

Pioneering New Applications With Industry’s Most Advanced eMRAM

In order to meet the needs of the latest advancements in the automotive market, Samsung is setting out to develop the industry’s first 5-nanometer eMRAM for next-generation automotive technology. eMRAM is a next-generation memory semiconductor used for automotive applications that enables high read and write speeds as well as superior heat resistance.

Since developing and mass producing the industry’s first 28nm FD-SOI¹ based eMRAM in 2019, Samsung Electronics has been developing 14nm for the FinFET process based on AEC-Q100 Grade 1. Samsung Foundry plans to expand its eMRAM portfolio by adding 14nm by 2024, 8nm by 2026, and 5nm by 2027.

Samsung’s 8nm eMRAM shows potential to deliver a 30% increase in density and 33% increase in speed, compared to the 14nm process.

Tackling the Market With Automotive Process Solutions From Cutting-Edge to Legacy

The company announced its advanced process roadmap, highlighting its plans to complete mass production readiness for its 2nm process for automotive applications by 2026.

Samsung Electronics is also bolstering its readiness to serve customer needs by expanding its 8-inch BCD (Bipolar-CMOS-DMOS) process portfolio. The BCD process combines the strengths of three different process technologies: Bipolar (B), CMOS (C), and DMOS (D) on one chip and is most commonly used in the production of power semiconductors.

Samsung Electronics plans to expand its current 130nm automotive BCD process to add 90nm by 2025. The 90nm BCD process is expected to bring a 20% decrease in chip area compared to the 130nm process.

Implementing Deep Trench Isolation (DTI) technology, which reduces the distance between each transistor to maximize the performance of power semiconductors, Samsung Foundry will be able to apply a greater voltage of 120V instead of 70V to a wider range of applications. This will enable readiness to provide a process development kit (PDK) that implements 120V to the 130nm BCD process by 2025.

Leading ‘Beyond-Moore’ Innovation Through Advanced Packaging Alliance

Samsung established a Multi-Die Integration (MDI) Alliance by collaborating with its SAFE partners as well as major players in memory, package substrate, and testing.

As part of an industry-wide partnership with 20 partners, Samsung is leading the development of 2.5D and 3D packaging solutions customized for all applications from automotive to high-performance computing (HPC).

Samsung Electronics hosted the annual Samsung Foundry Forum 2023 in the United States on June 27-28, in South Korea on July 4, and in Japan on October 17. The content from the forum will be available on the Samsung Semiconductor website for worldwide access to all visitors beginning November 2.

¹ Fully Depleted Silicon On Insulator (FD-SOI) is a planar process technology that implements an impervious insulating film (SiO2) on top of a silicon wafer and builds transistors on top of it to minimize leakage.

Samsung Electronics, a world leader in advanced semiconductor technology, today unveiled plans for continuous process technology migration to 3- and 2-nanometer (nm) based on the company’s Gate-All-Around (GAA) transistor structure at its 5^th annual Samsung Foundry Forum (SFF) 2021.

With a theme of Adding One More Dimension, the multi-day virtual event is expected to draw over 2,000 global customers and partners. At this year’s event, Samsung will share its vision to bolster its leadership in the rapidly evolving foundry market by taking each respective part of foundry business to the next level: process technology, manufacturing operations and foundry services.

“We will increase our overall production capacity and lead the most advanced technologies while taking silicon scaling a step further and continuing technological innovation by application,” said Dr. Siyoung Choi, President and Head of Foundry Business at Samsung Electronics.” Amid further digitalization prompted by the COVID-19 pandemic, our customers and partners will discover the limitless potential of silicon implementation for delivering the right technology at the right time.”

GAA Is Ready for Customers’ Adoption – 3nm MP in 2022, 2nm in 2025

With its enhanced power, performance and flexible design capability, Samsung’s unique GAA technology, Multi-Bridge-Channel FET (MBCFET^TM), is essential for continuing process migration. Samsung’s first 3nm GAA process node utilizing MBCFET will allow up to 35 percent decrease in area, 30 percent higher performance or 50 percent lower power consumption compared to the 5nm process. In addition to power, performance and area (PPA) improvements, as its process maturity has increased, 3nm’s logic yield is approaching a similar level to the 4nm process, which is currently in mass production.

Samsung is scheduled to start producing its customers’ first 3nm-based chip designs in the first half of 2022, while its second generation of 3nm is expected in 2023. Newly added to Samsung’s technology roadmap, the 2nm process node with MBCFET is in the early stages of development with mass production in 2025.

FinFET for CIS, DDI, MCU – 17nm Specialty Process Technology Debuts

Samsung Foundry is continuously improving its FinFET process technology to support specialty products with cost-effective and application-specific competitiveness. A good example of this is the company’s 17nm FinFET process node. In addition to the intrinsic benefits afforded by FinFET, the process node has excellent performance and power efficiency leveraging a 3D transistor architecture. Consequently, Samsung’s 17nm FinFET provides up to 43 percent decrease in area, 39 percent higher performance or a 49 percent increase in power efficiency compared to the 28nm process.

Additionally, Samsung is advancing its 14nm process in order to support 3.3V high voltage or flash-type embedded MRAM (eMRAM) which enables increased write speed and density. It will be a great option for applications such as micro controller units (MCUs), IoT and wearables. Samsung’s 8nm radio frequency (RF) platform is expected to expand the company’s leadership in the 5G semiconductor market from sub-6GHz to mmWave applications.

Looking ahead, in cooperation with its ecosystem partners, Samsung Foundry’s SAFE Forum will be held virtually in November 2021.

As eFlash has faced scalability challenges due to a charge storage-based operation, eMRAM has been the most promising successor since its resistance-based operation allows strong scalability while also possessing outstanding technical characteristics of memory semiconductors such as nonvolatility, random access, and strong endurance. With today’s announcement, Samsung has proved its capability to overcome technical hurdles and demonstrated the possibility for further scalability of embedded memory technology to 28nm process node and beyond.

Samsung’s 28FDS-based eMRAM solution offers unprecedented power and speed advantages with lower cost. Since eMRAM does not require an erase cycle before writing data, its writing speed is approximately a thousand times faster than eFlash. Also, eMRAM uses lower voltages than eFlash, and does not consume electric power when in power-off mode, resulting in great power efficiency.

Furthermore, since an eMRAM module can easily be inserted in the back-end of the process by adding the least number of layers, it has less dependence on the front-end of the process for easy integration with existing logic technologies, such as bulk, fin, and FD-SOI transistor. With this plug-in module concept, customers can enjoy the benefit of reutilizing existing design infrastructure even with this added new technology, eMRAM, and saving costs at the same time.

By combining with 28FD-SOI for better transistor control and minimizing leakage current through body-bias control, Samsung’s eMRAM solution will provide differentiated benefits for a variety of applications including micro controller unit (MCU), internet of things (IoT), and artificial intelligence (AI).

“We are very proud of this achievement in offering right embedded non-volatile memory (eNVM) technology after overcoming complicated challenges of new materials.” said Ryan Lee, vice president of foundry marketing at Samsung Electronics. “By integrating eMRAM with existing proven logic technologies, Samsung Foundry continues to expand its eNVM process portfolio to provide distinct competitive advantages and excellent manufacturability to meet customers and market requirement.”

A ceremony to celebrate this first shipment of eMRAM product will be held on March 6 at Samsung’s Giheung campus, Korea. Samsung plans to expand its options for high-density eNVM solutions, including a tape-out of 1Gb eMRAM test chip within this year.