Through further scaling from the earlier 14LPP process, 11LPP delivers up to 15 percent higher performance and up to 10 percent chip area reduction with the same power consumption.

In addition to the 10nm FinFET process for mobile processors in premium flagship smartphones, the company expects its 11nm process to bring differentiated value to mid- to high-end smartphones.

The new process technology is scheduled to be ready for production in the first half of 2018.

Samsung also confirmed that development of 7LPP with EUV (extreme ultra violet) lithography technology is on schedule, targeting its initial production in the second half of 2018.

Since 2014, Samsung has processed close to 200,000 wafers with EUV lithography technology and, building on its experience, has recently seen visible results in process development such as achieving  80 percent yield for 256 megabit (Mb) SRAM (static random-access memory).

“Samsung has added the 11nm process to our roadmap to offer advanced options for various applications,” said Ryan Lee, Vice President and Head of Foundry Marketing at Samsung Electronics. “Through this, Samsung has completed a comprehensive process roadmap spanning from 14nm to 11nm, 10nm, 8nm, and 7nm in the next three years.”

Details of the recent update to Samsung’s foundry roadmap, including 11LPP availability and 7nm EUV development, will be elaborated at the Samsung Foundry Forum Japan on September 15, 2017, in Tokyo. The Samsung Foundry Forum was held in the United States and South Korea earlier this year, sharing Samsung’s cutting-edge process technologies with global customers and partners.

Kinam Kim, President of Samsung Electronics’ Semiconductor Business, introduces the company’s newest foundry process technologies and solutions.

“The ubiquitous nature of smart, connected machines and everyday consumer devices signals the beginning of the next industrial revolution,” said Jong Shik Yoon, Executive Vice President of the Foundry Business at Samsung Electronics. “To successfully compete in today’s fast-paced business environment, our customers need a foundry partner with a comprehensive roadmap at the advanced process nodes to achieve their business goals and objectives.”

The Samsung Foundry Forum showcased a number of new technologies that will enable the development of new devices that will connect consumers in entirely new ways. Pictured from left are: Jong Shik Yoon, Executive Vice President of Foundry Business; Young Chang Bae, Executive Vice President of Foundry Business; ES Jung, Executive Vice President of Foundry Business; and Kinam Kim, President of Semiconductor Business.

Samsung’s newest foundry process technologies and solutions introduced at the annual Samsung Foundry Forum include:

• 8LPP (8nm Low Power Plus): 8LPP provides the most competitive scaling benefit before transitioning to EUV (Extreme Ultra Violet) lithography. Combining key process innovations from Samsung’s 10nm technology, 8LPP offers additional benefits in the areas of performance and gate density as compared to 10LPP.

• 7LPP (7nm Low Power Plus): 7LPP will be the first semiconductor process technology to use an EUV lithography solution. 250W of maximum EUV source power, which is the most important milestone for EUV insertion into high volume production, was developed by the collaborative efforts of Samsung and ASML. EUV lithography deployment will break the barriers of Moore’s law scaling, paving the way for single nanometer semiconductor technology generations.

• 6LPP (6nm Low Power Plus): 6LPP will adopt Samsung’s unique Smart Scaling solutions, which will be incorporated on top of the EUV-based 7LPP technology, allowing for greater area scaling and ultra-low power benefits.

• 5LPP (5nm Low Power Plus): 5LPP extends the physical scaling limit of FinFET structure by implementing technology innovations from the next process generation, 4LPP, for better scaling and power reduction.

• 4LPP (4nm Low Power Plus): 4LPP will be the first implementation of next generation device architecture – MBCFET^TM structure (Multi Bridge Channel FET). MBCFET^TM is Samsung’s unique GAAFET (Gate All Around FET) technology that uses a Nanosheet device to overcome the physical scaling and performance limitations of the FinFET architecture.

• FD-SOI (Fully Depleted – Silicon on Insulator): Well suited for IoT applications, Samsung will gradually expand its 28FDS technology into a broader platform offering by incorporating RF (Radio Frequency) and eMRAM(embedded Magnetic Random Access Memory) options. 18FDS is the next generation node on Samsung’s FD-SOI roadmap with enhanced PPA (Power/Performance/Area).

EVP Yoon concluded that “Samsung Foundry’s advanced process technology roadmap is a testament to the collaborative nature of our customer and ecosystem partner relationships. The inclusion of the process technologies above will enable an explosion of new devices that will connect consumers in ways never seen before.”