Following the industry’s first mass production and commercial shipment of its industry-leading HBM4 earlier this year, Samsung now extends its HBM roadmap with the introduction of HBM4E samples, addressing the rapidly evolving demands of AI computing and hyperscale infrastructure.

“Following the successful mass production of HBM4, Samsung has once again demonstrated its distinct technological edge with HBM4E,” said Sang Joon Hwang, Executive Vice President and Head of Memory Development at Samsung Electronics. “Through our advanced manufacturing capabilities and preemptive infrastructure investments, we will continue to drive the growth of the global AI memory market.”

Samsung’s HBM4E delivers a stable pin speed of 14 gigabits-per-second (Gbps), with performance scalable up to 16Gbps to support increasingly intensive data processing requirements. This represents more than a 20% increase over its HBM4, while delivering memory bandwidth of up to 3.6 terabytes-per-second (TB/s) per stack, helping maximize computing performance for large language models (LLMs) and next-generation AI systems.

Samsung’s 12-layer HBM4E is offered in a 48-gigabyte (GB) capacity, representing more than a 30% increase over the previous generation, with plans to expand the lineup to include 32GB (8-layer) and 64GB (16-layer) configurations in accordance with customer requirements.

The HBM4E sets itself apart by taking full advantage of Samsung’s comprehensive semiconductor capabilities and leveraging the same leading-edge technologies refined through the company’s HBM4 production experience. This includes the industry’s most advanced 6th-generation 10-nanometer (nm)-class DRAM process (1c) and Samsung Foundry’s 4nm logic base die, allowing the HBM4E to secure enhanced process stability and manufacturability.

Design and process optimization across both memory and logic architectures of Samsung’s HBM4E also improves performance, power efficiency and yield.

In particular, advanced low-power design technologies and optimized packaging structures improved energy efficiency by 16% and thermal resistance characteristics by more than 14% compared to the previous generation. These enhancements also enable more effective heat dissipation, allowing prolonged reliability and lower energy consumption in next-generation data centers with intensive workloads.

Samsung plans to begin mass production for HBM4E aligned with customer schedules, following initial sample shipments and optimization.

Feedback from global customers on Samsung’s HBM4, introduced in February, have been highly positive, especially for its performance and energy efficiency. The HBM4 was the first in the industry to enter mass production and has successfully set the bar for the industry with speeds of 11.7Gbps in its system in package (SiP) tests.

As stable supply of Samsung’s HBM4 continues to grow, the company’s latest HBM4E using the same combination of core and base die is anticipated to enter mass production to further accelerate innovation in next-generation AI systems. With its comprehensive portfolio spanning memory, foundry, logic design and advanced packaging, Samsung will continue to ensure a stable semiconductor supply for the booming AI market.

The centerpiece of Samsung’s showcase at NVIDIA GTC 2026 will be the new sixth-generation HBM4, which is now in mass production and is designed for the NVIDIA Vera Rubin platform. Samsung’s HBM4 is expected to help accelerate the development of future AI applications, delivering consistent processing speeds of 11.7 gigabits-per-second (Gbps), which exceeds the industry standard of 8Gbps, and can be enhanced to 13Gbps.

By leveraging the most advanced sixth-generation 10-nanometer (nm)-class DRAM process (1c), Samsung has achieved stable yields and industry-leading performance. The company’s next-generation HBM4E, delivering 16Gbps per pin and 4.0 terabytes-per-second (TB/s) bandwidth, will be on display as well for the first time at GTC 2026.

Visitors will also be able to catch a glimpse of Samsung’s hybrid copper bonding (HCB) technology, a new method that will enable next-generation HBM to achieve 16 or more layers while reducing heat resistance by more than 20 percent, compared to thermal compression bonding (TCB).

An Alliance Taking the AI Era to the Next Level

The strong collaboration between Samsung and NVIDIA will be highlighted in the booth’s separate ‘NVIDIA Gallery,’ specifically featuring a broad lineup of Samsung’s cutting-edge technologies, such as HBM4, SOCAMM2 and PM1763 SSD that are designed for NVIDIA AI infrastructure.

Addressing the need for maximum efficiency and scalability in AI systems, Samsung’s SOCAMM2 based on low-power DRAM is an optimum server memory module that offers high bandwidth and flexible system integration for next-generation AI infrastructure. Samsung’s SOCAMM2 is currently in mass production, an industry-first to reach that milestone.

Designed for next-generation AI storage solutions, Samsung’s PM1763 SSD is based on the latest PCIe 6.0 interface offering fast data transfers and high capacities. The industry-leading PM1763 performance will be demonstrated on servers working with the NVIDIA SCADA programming model.

As part of the new NVIDIA BlueField-4 STX reference architecture for accelerated storage infrastructure in NVIDIA’s Vera Rubin platform, Samsung’s PM1753 SSD will show how it helps to enhance energy efficiency and system performance for inference workloads.

Memory Architecture To Scale Intelligent Manufacturing

Samsung will showcase its collaboration with NVIDIA on AI Factory development at GTC 2026, including plans to implement NVIDIA accelerated computing to scale Samsung’s AI Factory and fast-track digital twin manufacturing that leverage NVIDIA Omniverse libraries. This collaboration powers one of the world’s most comprehensive chip manufacturing infrastructures ― spanning memory, logic, foundry and advanced packaging.

Separately, Yong Ho Song, Executive Vice President and Head of AI Center at Samsung Electronics, will illustrate the two companies’ strategic collaboration in further detail through his speaker session on March 17, 2026. Titled ‘Transforming Semiconductor Manufacturing with Agentic AI from Design and Engineering to Production,’ the session will elaborate on the company’s AI Factory and share innovative end-to-end real-life use cases where AI and digital twins are reshaping semiconductor manufacturing with breakthroughs in electronic design automation (EDA) and computational lithography to designing and operating advanced manufacturing facilities powered by NVIDIA.

Efficient Memory for Local Intelligence

Samsung’s memory solutions also offer maximized efficiency for local AI workloads on personal devices. During GTC 2026, Samsung will showcase tailored and efficient solutions for personal AI supercomputers, including the Samsung PM9E3 and PM9E1 NAND for NVIDIA DGX Spark.

Additionally, Samsung will display DRAM solutions, LPDDR5X and LPDDR6, that are designed for seamless integration into premium smartphones, tablets and wearable devices, offering faster data throughput and lower latency. LPDDR5X delivers speeds of up to 25Gbps per pin, while cutting power consumption by up to 15 percent, enabling ultra‑responsive mobile experiences, high‑resolution gaming and AI‑enhanced applications without sacrificing battery life.

Building on that foundation, LPDDR6 pushes bandwidth further to a scalable 30‑35 Gbps per pin and introduces advanced power‑management features such as adaptive voltage scaling and dynamic refresh control, which together provide the performance needed for next‑generation edge‑AI workloads.