“With the recent proliferation of electric vehicles and the rapid advancement of infotainment and autonomous driving systems, the semiconductor automotive platform is facing a paradigm shift. What used to be a seven to eight-year replacement cycle is now being compressed into a three to four-year cycle, and at the same time, performance and capacity requirements are advancing to levels commonly found in servers,” said Jinman Han, Executive Vice President and Head of Memory Global Sales & Marketing at Samsung Electronics. “Samsung’s reinforced lineup of memory solutions will act as a major catalyst in further accelerating the shift toward the ‘Server on Wheels’ era.”

Advanced features in infotainment systems such as high-definition maps, video streaming and 3D gaming, together with the growing use of autonomous driving systems, have been driving the demand for high-capacity, high-performance SSDs and graphics DRAM throughout the automotive industry.

In 2017, Samsung was the first in the industry to introduce UFS solutions for automotive applications. Today, the company is well-positioned to provide a total memory solution with the new automotive SSD and GDDR6 DRAM.

Samsung’s 256GB BGA SSD controller and firmware are developed in-house for optimized performance, offering a sequential read speed of 2,100 megabytes per second (MB/s) and a sequential write speed of 300MB/s, which are seven and two times faster than today’s eMMC, respectively. Furthermore, the 2GB GDDR6 DRAM features up to a 14 gigabit-per-second (Gbps) data rate per pin. Such exceptional speeds and bandwidth will support complex processing of various multimedia applications as well as large amounts of autonomous driving data, contributing to a safer, more dynamic and more convenient driving experience.

In addition, Samsung’s new automotive solutions meet the AEC-Q100 qualification — the global automotive reliability standard — allowing them to operate stably in extreme temperatures ranging from -40°C to +105°C, which is an especially crucial requirement for automotive semiconductors.

Recently, sensor deployment in autonomous vehicles to continuously monitor immediate surroundings has been increasing, and high-speed processing to interpret and predict this data for safer driving is becoming critically important. By introducing automotive memory solutions previously championed in servers and AI accelerators, Samsung is helping to pave the way for safer autonomous driving.

Having already completed customer evaluations, the new automotive memory products are currently in mass production.

Samsung Electronics, the world leader in advanced memory technology, announced that it is adding three TCO-optimized, high-performance SSDs, based on 3-dimensional (3D) Vertical NAND (V-NAND) technology, to its industry-leading portfolio of advanced enterprise and data center SSDs in the US. The drives are available now.

“We are providing high-end capabilities and capacities for all of our latest SSDs, something we believe will elicit a high degree of interest from OEMs and computer enthusiasts throughout the world,” said Jim Elliott, Corporate Vice President, Samsung Semiconductor, Inc. “We understand the performance needs of our customers in a rapidly expanding SSD universe and are determined to meet those needs.”

Designed for OEMs, Samsung’s new SSDs – the PM1633, PM1725 and PM953 all utilize Samsung’s 3-bit MLC (multi-level-cell) V-NAND flash memory, while providing outstanding performance and reliability, as well as high capacities.

PM1633: a 2.5” 12Gb/s SAS SSD designed for enterprise storage

Samsung’s latest SAS SSD, the PM1633, is designed to meet all requirements of Serial Attached SCSI (SAS) interface based systems. The 2.5” 12 gigabit-per-second (Gb/s) SAS SSD will be offered in 480GB, 960GB, 1.92 terabyte (TB) and 3.84TB versions.

The PM1633 delivers random read and write speeds of up to 160,000 and 18,000 IOPS respectively, and boasts sequential read and write speeds of up to 1,100MB/s and 1,000MB/s.

PM1725: can randomly read 1 million IOPS with a 6.4TB HHHL-card NVMe PCIe* SSD design

Targeting the next-generation enterprise storage market, Samsung is introducing a half-height, half-length (HHHL) card-type NVMe SSD, the PM1725, offering blazingly fast data transmission and a 3.2TB or 6.4TB storage capacity.

The PM1725 provides a random read speed of up to 1,000,000 IOPS (input output operations per second) and writes randomly at up to 120,000 IOPS. It also sequentially reads at up to 5,500 megabytes per second (MB/s) and writes sequentially at up to 1,800MB/s, which enables users to save a 5GB video in less than three seconds.

In addition, the 6.4TB PM1725 features outstanding reliability with five DWPDs (drive writes per day) for five years, which translates to writing a total of 32TBs per day during that time. This means users can write 6,400 files of 5GB-equivalent data or video every day, which represents a level of reliability quite sufficient for enterprise storage systems that have to perform ultrafast transmission of large amount of data.

PM953: an advanced NVMe SSD in M.2 and 2.5” form factors offering up to 1.92TB storage

Samsung is introducing an update to the industry’s first NVMe SSD (SM951) in an M.2 form factor that was announced earlier this year.

The new PM953 comes in NVMe interface and is available in both M.2 and 2.5” form factors to satisfy a variety of next-generation system requirements such as large-scale data centers and mobile workstations as well as ultra-slim notebook PCs and high-end desktops. The M.2 version will be offered with either 480 or 960 gigabytes (GBs), while the 2.5” version will be out in 480GB, 960GB and 1.92TB capacities.