This marks the third project in which KT and Samsung’s Networks Business unit have partnered on PS-LTE network deployments. The two previous projects were the world’s first PS-LTE network throughout Gangwon (Pyeongchang) province of South Korea using 700MHz based on the 3GPP standard in 2016 (Link), and the 2017 delivery of LTE-Railway service on a high-speed train traveling at up to 250 km/hour (155 mph) using MCPTT solutions for the first time (Link). The two companies are now aiming to expand PS-LTE network further into the metropolitan areas around the country, including Seoul, Gyeonggi, Gangwon, Jeolla, Gyeongbuk and Chungnam provinces.

“Samsung is thrilled to see such a significant achievement in the country’s public safety where our continuous efforts and innovation on technology have advanced the safety of the world,” said GY Seo, Senior Vice President and Head of Global Sales & Marketing, Networks Business at Samsung Electronics. “Samsung is honored to take part in this important mission with KT by providing PS-LTE solutions that will ensure seamless and stable connectivity across the nation.”

“By acquiring innovative wireless communications from Samsung, we are able to aid in life-threatening situations where data traffic is severely congested or connection is completely out of reach,” said Yoon-Young Park, Senior Executive Vice President and Head of Enterprise Business Group at KT. “These first-of their-kind networks help responders connect with those in need.”

In addition to LTE radio base stations that support 700MHz, Samsung is providing KT with virtualized core and the latest features of PS-LTE based on the 3GPP standard. Some of the key features include MCPTT solutions, RAN Sharing, evolved Multimedia Broadcast Multicast Service, Public Network IoT based on NB-IoT, Isolated eUTRAN Operation for Public Safety (IOPS), and device to device (D2D) network solutions.

D2D and NB-IoT play crucial roles in creating public safety network by ensuring stable, seamless, and reliable network in unfavorable environments. For instance, D2D allows direct and undisrupted communications between any two devices without traversing radio base stations or core network even in areas where bases stations are not provided.

For the first time, NB-IoT is applied to the public safety network to help prevent natural disasters like fires as hundreds of IoT sensors are deployed to sense even the smallest size of embers or people that have been stranded in remote areas of mountains that are hard to spot in general.

Newly Applied PS-LTE Key Features

About KT CORP.

KT Corporation, Korea’s largest telecommunications service provider, reestablished in 1981 under the Telecommunications Business Act, is leading the era of innovations in the world’s most connected country. The company is leading the 4th industrial revolution with high speed wire/wireless network and new ICT technology. KT launched the world’s first nationwide commercial 5G network on April 3, 2019, after successfully showcasing the world’s first trial 5G services at the PyeongChang Winter Olympic Games in February 2018. This is another milestone in KT’s continuous efforts to deliver essential products and services as it aspires to be the number one ICT Company and People’s Company.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first one-terabyte (TB) embedded Universal Flash Storage (eUFS) 2.1, for use in next-generation mobile applications. Just four years after introducing the first UFS solution, the 128-gigabyte (GB) eUFS, Samsung has passed the much-anticipated terabyte threshold in smartphone storage. Smartphone enthusiasts will soon be able to enjoy storage capacity comparable to a premium notebook PC, without having to pair their phones with additional memory cards.

“The 1TB eUFS is expected to play a critical role in bringing a more notebook-like user experience to the next generation of mobile devices,” said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. “What’s more, Samsung is committed to assuring the most reliable supply chain and adequate production quantities to support the timely launches of upcoming flagship smartphones in accelerating growth of the global mobile market.”

Within the same package size (11.5mm x 13.0mm), the 1TB eUFS solution doubles the capacity of the previous 512GB version by combining 16 stacked layers of Samsung’s most advanced 512-gigabit (Gb) V-NAND flash memory and a newly developed proprietary controller. Smartphone users will now be able to store 260 10-minute videos in 4K UHD (3840×2160) format, whereas the 64GB eUFS widely used in many current high-end smartphones is capable of storing 13 videos of the same size.

The 1TB eUFS also possesses exceptional speed, allowing users to transfer large amounts of multimedia content in significantly reduced time. At up to 1,000 megabytes per second (MB/s), the new eUFS features approximately twice the sequential read speed of a typical 2.5-inch SATA solid state drive (SSD). This means that 5GB-sized full HD videos can be offloaded to an NVMe SSD in as fast as five seconds, which is 10 times the speed of a typical microSD card. Furthermore, the random read speed has increased by up to 38 percent over the 512GB version, clocking in at up to 58,000 IOPS. Random writes are 500 times faster than a high-performance microSD card (100 IOPS), coming in at up to 50,000 IOPS. The random speeds allow for high-speed continuous shooting at 960 frames per second and will enable smartphone users to take full advantage of the multi-camera capabilities in today and tomorrow’s flagship models.

Samsung plans to expand the production of its fifth-generation 512Gb V-NAND at its Pyeongtaek plant in Korea throughout the first half of 2019 to fully address the anticipated strong demand for the 1TB eUFS from mobile device manufacturers around the world.

* Reference: Comparison of Internal Memory Performance

This breakthrough was made possible by combining 32 of the new 1TB NAND flash packages, each comprised of 16 stacked layers of 512Gb V-NAND chips. These super-dense 1TB packages allow for approximately 5,700 5-gigabyte (GB), full HD movie files to be stored within a mere 2.5-inch storage device.

In addition to the doubled capacity, performance levels have risen significantly and are nearly twice that of Samsung’s previous generation high-capacity SAS SSD. Based on a 12Gb/s SAS interface, the new PM1643 drive features random read and write speeds of up to 400,000 IOPS and 50,000 IOPS, and sequential read and write speeds of up to 2,100MB/s and 1,700 MB/s, respectively. These represent approximately four times the random read performance and three times the sequential read performance of a typical 2.5-inch SATA SSD*.

“With our launch of the 30.72TB SSD, we are once again shattering the enterprise storage capacity barrier, and in the process, opening up new horizons for ultra-high capacity storage systems worldwide,” said Jaesoo Han, executive vice president, Memory Sales & Marketing Team at Samsung Electronics. “Samsung will continue to move aggressively in meeting the shifting demand toward SSDs over 10TB and at the same time, accelerating adoption of our trail-blazing storage solutions in a new age of enterprise systems.”

Samsung reached the new capacity and performance enhancements through several technology progressions in the design of its controller, DRAM packaging and associated software. Included in these advancements is a highly efficient controller architecture that integrates nine controllers from the previous high-capacity SSD lineup into a single package, enabling a greater amount of space within the SSD to be used for storage. The PM1643 drive also applies Through Silicon Via (TSV) technology to interconnect 8Gb DDR4 chips, creating 10 4GB TSV DRAM packages, totaling 40GB of DRAM. This marks the first time that TSV-applied DRAM has been used in an SSD.

Complementing the SSD’s hardware ingenuity is enhanced software that supports metadata protection as well as data retention and recovery from sudden power failures, and an error correction code (ECC) algorithm to ensure high reliability and minimal storage maintenance. Furthermore, the SSD provides a robust endurance level of one full drive write per day (DWPD), which translates into writing 30.72TB of data every day over the five-year warranty period without failure. The PM1643 also offers a mean time between failures (MTBF) of two million hours.

Samsung started manufacturing initial quantities of the 30.72TB SSDs in January and plans to expand the lineup later this year – with 15.36TB, 7.68TB, 3.84TB, 1.92TB, 960GB and 800GB versions – to further drive the growth of all-flash-arrays and accelerate the transition from hard disk drives (HDDs) to SSDs in the enterprise market. The wide range of models and much improved performance will be pivotal in meeting the growing storage needs in a host of market segments, including the government, financial services, healthcare, education, oil & gas, pharmaceutical, social media, business services, retail and communications sectors.

* Compared to 2.5-inch Samsung SSD 850 EVO

Following the memory breakthrough of the automotive industry’s first 128GB eUFS in September, 2017, Samsung’s 256GB eUFS is now being shipped to automotive manufacturers preparing the market for Advanced Driver Assistance Systems (ADAS), next-generation infotainment systems and new-age dashboards in luxury vehicles.

As thermal management is crucial for automotive memory applications, Samsung’s 256GB eUFS extends the temperature range to between -40°C and 105°C for both operational and power-saving modes. Warranties for conventional embedded multimedia card (eMMC) 5.1 solutions generally cover -25°C to 85°C for vehicles in operation and -40°C to 85°C when in idle or power-saving mode,

“With the new temperature threshold for automobile warranties, major automotive manufacturers can now design-in memory that’s even well suited for extreme environments and know they will be getting highly reliable performance,” said Kyoung Hwan Han, vice president of NAND marketing at Samsung Electronics. “Starting with high-end vehicles, we expect to expand our business portfolio across the entire automotive market, while accelerating growth in the premium memory segment.”

Samsung’s 256GB eUFS not only can easily endure the new temperature specification, despite the heat-sensitive nature of memory storage, but also through its temperature notification feature, a sensor will notify the host application processor (AP) when the device temperature exceeds 105°C or any pre-set level. The AP would then regulate its clock speed to lower the temperature to an acceptable level.

Sequential reads for the 256GB eUFS can reach 850 megabytes per second (MB/s), which is at the high end of the current JEDEC UFS 2.1 standard, and random read operations come in at 45,000 IOPS. In addition, a data refresh feature speeds up processing and enables greater system reliability by relocating older data to other less-used cells.

The temperature notification, developed by Samsung, and data refresh features are included in UFS specification, version 3.0, which was announced last month by JEDEC, a global semiconductor standards organization.

Samsung plans to bolster its technology partnerships with global automakers and component providers, and continue expanding its eUFS line-up with an aim to lead the premium memory market.