Samsung Electronics, the world leader in advanced memory technology, today announced the successful qualification of Samsung’s automotive LPDDR4X memory for use with the Snapdragon^® Digital Chassis from Qualcomm Technologies, Inc. The LPDDR4X memory is set to be applied in premium in-vehicle infotainment (IVI) and advanced driver-assistance systems (ADAS).

Samsung’s automotive LPDDR4X qualification signifies the company’s dedicated long-term support of customers with a variety of new products and technologies for automotive applications. This also helps ensure robust supply chain stability and enhanced support for ecosystem partners who are utilizing the Snapdragon Digital Chassis.

“With a broad automotive lineup of AEC-Q100¹-qualified DRAM and NAND products, Qualcomm Technologies is an ideal partner to work with for long-term customer solutions,” said Hyunduk Cho, Vice President and Head of the Automotive Group at Samsung Electronics’ Memory Business. “Through Samsung’s leadership in design, manufacturing and packaging for memory solutions, our work with Qualcomm Technologies can help support rapid development cycles while ensuring reliability, verification and exceptional product control, which are essential for the automotive industry.”

Samsung is also developing its next-generation automotive LPDDR5, and samples are expected to be available within the fourth quarter of this year. The LPDDR5 product will be able to support the highest speed currently available in the automotive memory market at up to 9.6 gigabits-per-second (Gbps), even in extreme temperatures.

¹ The AEC-Q100 standard is a stress-test qualification for packaged integrated circuits (ICs) used in automotives.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the highest-capacity mobile DRAM – the industry’s first 12-gigabyte (GB) low-power double data rate 4X (LPDDR4X) package – optimized for tomorrow’s premium smartphones. Featuring higher capacity than most ultra-thin notebooks, the new mobile DRAM will enable smartphone users to take full advantage of all the features in next-generation smartphones.

“With mass production of the new LPDDR4X, Samsung is now providing a comprehensive lineup of advanced memory to power the new era of smartphones, from 12GB mobile DRAM to 512GB eUFS 3.0 storage,” said Sewon Chun, executive vice president of Memory Marketing at Samsung Electronics. “Moreover, with the LPDDR4X, we’re strengthening our position as the premium mobile memory maker best positioned to accommodate rapidly growing demand from global smartphone manufacturers.”

Thanks to the 12GB mobile DRAM, smartphone makers can maximize the potential of devices that feature more than five cameras and ever-increasing display sizes as well as artificial intelligence and 5G capabilities. For smartphone users, the 12GB DRAM enables more fluid multitasking and faster searches as they navigate through a myriad of apps on ultra-large high-resolution screens. Also, the 1.1-millimeter thickness allows for even sleeker smartphone designs.

The 12GB capacity was achieved by combining six 16-gigabit (Gb) LPDDR4X chips based on the second-generation 10nm-class (1y-nm) process into a single package, providing more space for the smartphone battery. In addition, by using the company’s 1y-nm technology, the new 12GB mobile memory delivers a data transfer rate of 34.1GB per second while minimizing the increase in power consumption inevitably caused by a boost in DRAM capacity.

Since introducing 1GB mobile DRAM in 2011, Samsung continues to drive capacity breakthroughs in the mobile DRAM market, moving from 6GB (in 2015) and 8GB (2016) to today’s first 12GB LPDDR4X. From its cutting-edge memory line in Pyeongtaek, Korea, Samsung plans to more than triple the supply of its 1y-nm-based 8GB and 12GB mobile DRAM during the second half of 2019 to meet the anticipated high demand.

[Reference] Samsung Mobile DRAM Timeline: Production/Mass Prod.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first 2^nd-generation of 10-nanometer-class^* (1y-nm), LPDDR4X (Low Power, Double Data Rate, 4X) DRAM to improve the efficiency and lower the battery drain of today’s premium smartphones and other mobile applications.

Compared to the mobile DRAM memory chips most used in current flagship mobile devices (1x-nm 16Gb LPDDR4X), the 2^nd– generation LPDDR4X DRAM features up to a 10 percent power reduction while maintaining the same data rate of 4,266 megabits per second (Mb/s).

“The advent of 10nm-class mobile DRAM will enable significantly enhanced solutions for next-generation, flagship mobile devices that should first hit the market late this year or the first part of 2019.” said Sewon Chun, senior vice president of Memory Sales & Marketing at Samsung Electronics. “We will continue to grow our premium DRAM lineup to lead the ‘high-performance, high capacity, and low power’ memory segment to meet the market demand and strengthen our business competitiveness.”

Samsung will be expanding its premium DRAM lineup that is based on the 1y-nm process by more than 70 percent. This initiative began with mass producing the first 10nm-class 8Gb DDR4 server DRAM last November and continues with this 16Gb LPDDR4X mobile memory chip only eight months later.

Samsung said that it has created an 8GB LPDDR4X mobile DRAM package by combining four of the 10nm-class 16Gb LPDDR4X DRAM chips (16Gb=2GB). This four-channel package can realize a data rate of 34.1GB per second and its thickness has been reduced more than 20 percent from the 1^st-gen package, enabling OEMs to design slimmer yet more effective mobile devices.

With its LPDDR4X advancements, Samsung will be rapidly expanding its share of mobile DRAM in the market by providing a variety of high-capacity products, including 4GB, 6GB and 8GB LPDDR4X packages.

In line with its roll-out of 10nm-class LPDDR4X, Samsung has started operating a new DRAM production line in Pyeongtaek, Korea, to assure a stable supply of all mobile DRAM chips, in response to the increasing demand.

^*10nm-class denotes a process technology node somewhere between 10 and 19 nanometers.

TIMELINE: Samsung’s Mass Production History of Mobile DRAM since 2012

(2018.07 Develops 10nm-class  8Gb LPDDR5, 6400Mb/s)

“The 16Gb LPDDR4X DRAM is our most advanced automotive solution yet, offering global automakers outstanding reliability, endurance, speed, capacity and energy efficiency, ,” said Sewon Chun, senior vice president of memory marketing at Samsung Electronics. “Samsung will continue to closely collaborate with manufacturers developing diverse automotive systems, in delivering premium memory solutions anywhere.”

Moving a step beyond its 20nm-class ‘Automotive Grade 2’ DRAM, which can withstand temperatures from -40°C to 105°C, Samsung’s 16Gb LPDDR4X is Automotive Grade 1-compliant, raising the high-end threshold to 125°C. By more than satisfying the rigorous on-system thermal cycling tests of global auto manufacturers, the 16Gb LPDDR4X has enhanced its reliability for a wide variety of automotive applications in many of the world’s most challenging environments.

Adding to the degree of reliability under high temperatures, production at an advanced 10nm-class node is key to enabling the 16Gb LPDDR4X to deliver its leading-edge performance and power efficiency. Even in environments with extremely high temperatures of up to 125°C, its data processing speed comes in at 4,266 megabits per second (Mbps), a 14 percent increase from the 8Gb LPDDR4 DRAM that is based on 20nm process technology, and the new memory also registers a 30 percent increase in power efficiency.

Along with a 256 gigabyte (GB) embedded Universal Flash Storage (eUFS) drive announced in February, Samsung has expanded its advanced memory solution lineup for future automotive applications with the 10nm-class 16Gb LPDDR4X DRAM, commercially available in 12Gb, 16Gb, 24Gb and 32Gb capacities. While extending its 10nm-class DRAM offerings, the company also plans on bolstering technology partnerships for automotive solutions that include vision ADAS (Advanced Driver Assistance Systems), autonomous driving, infotainment systems and gateways.

*Editor’s Note:  10nm-class is a process node between 10 and 19 nanometers

With its decades-long technology innovation and expertise, Samsung Electronics’ Device Solutions Division provides an extensive range of semiconductor and LED solutions to meet the ever-increasing requirements of the mobile industry. While not always visible to end users, Samsung’s component solutions have been utilized comprehensively to raise the level of what’s possible for mobile devices, and help enable a world of difference in performance and user experience.

Here, we go under the hood, to take a look at some of these solutions.

Leading-edge Processor and Memory Solutions for a Seamless User Experience

One prime example of Samsung’s component innovation is the Exynos 9 Series 9810 processor, built upon the company’s latest 2^nd generation 10-nanometer LPP process technology. The processor delivers powerful mobile computing performance with its 3^rd generation CPU and seamless connectivity with a 6-mode/all network supporting 1.2Gbps DL 6CA Cat.18 LTE modem.

Working in tandem with the Exynos processor is the LPDDR4X memory chip, the industry’s most up-to-date mobile DRAM solution that provides breakthrough RAM performance and energy efficiency. Available in a compact package offering up to 8-gigabyte (GB) capacity, the LPDDR4X enables prompt multitasking and data processing for advanced mobile applications such as 4K UHD video recording and virtual computing.

Also, under today’s heavy multimedia and content use environment, users can safely store their valuable data on Samsung eUFS, an embedded high-speed mobile storage solution for flagship devices. Based on Samsung’s proprietary V-NAND technology, the eUFS features ultrafast data read and download speeds as well as abundant storage capacity as high as 512GB.

Enhanced Imaging and Video Features

The Samsung ISOCELL Fast 2L3, a 3-stack fast readout image sensor with an embedded 2Gb LPDDR4 memory, enables significantly enhanced mobile imaging and video functionality with the ability to record at 960fps for brand new features like stunning slow-motion video shooting. Also among Samsung’s broad image sensor lineup is a front-facing ISOCELL Bright image sensor, which enables high-quality selfies on mobile devices even in very low light settings, using leading-edge pixel technologies.

In addition, Samsung’s Patterned Lens-Integrated Flash LED component, positioned next to the rear camera, enhances the quality of images even further with its high luminous intensity and uniformity.

Reinforced Security, Power and Touch Command Management 

Samsung continues to reinforce security, power, and touch command management on mobile devices through an array of component solutions. For example, its new iris sensor enables a fast yet highly secure option to unlock or authorize application access, and the touch controller enables instant feedback at the tap of one’s finger. Last but not the least, Samsung’s power management IC delivers a stable supply of power, supporting devices to perform with optimal energy efficiency.

As mobile devices continue to evolve, Samsung Electronics’ Device Solutions Division will remain committed to developing and providing its customers with semiconductor and LED technology with distinct value, and providing the best in performance, capacity, functionality and energy efficiency.