Samsung Electronics plans to invest about KRW 20 trillion by 2028 for the complex in an area covering about 109,000 square meters within its Giheung campus. The new facility will lead advanced research on next-generation devices and processes for memory and system semiconductors, as well as development of innovative new technologies based on a long-term roadmap.

Today’s groundbreaking ceremony was attended by Samsung Electronics Vice Chairman Jay Y. Lee, President and CEO Kye Hyun Kyung, President of the Memory Business Jung-Bae Lee, President of the Foundry Business Siyoung Choi and President of the S.LSI Business Yong-In Park, along with more than 100 employees.

“Our new state-of-the-art R&D complex will become a hub for innovation where the best research talent from around the world can come and grow together,” said President Kye Hyun Kyung, who also heads the Device Solutions (DS) Division. “We expect this new beginning will lay the foundation for sustainable growth of our semiconductor business.”

With the establishment of the new R&D facility, Samsung Electronics is seeking to overcome the limits of semiconductor scaling and solidify its competitive edge in semiconductor technology.

Samsung Electronics’ Giheung campus, located south of Seoul near the DS Division’s Hwaseong campus, is the birthplace of the world’s first 64Mb DRAM in 1992, marking the beginning of the company’s semiconductor leadership.

The new Giheung R&D facility, together with the R&D line in Hwaseong and the world’s largest semiconductor production complex in Pyeongtaek, is also expected to elevate the synergy among Samsung’s three main semiconductor complexes in the metropolitan area.

After the ceremony, Vice Chairman Jay Y. Lee visited the Hwaseong campus to meet with employees of the DS Division, where they discussed ways to promote innovation within the company. At a separate meeting with executives of the DS Division, discussions involved current issues in the global semiconductor industry, progress of next-generation semiconductor technology R&D and ways to secure technology to expand semiconductor leadership.

Future-First Memory Solutions for Data-Driven Innovation

With the development of their DDR5 solution, Samsung, a company known for changing the landscape of the global dynamic random access memory (DRAM) market, has introduced yet another generational shift in the IT industry. Furthermore, following the release earlier this year of CPUs that support DDR5, tremendous change is expected in the computing landscape, too, with growth expected to encompass gaming and mainstream PCs as well.

Compared to its predecessor which hit the market in 2013, DDR4, DDR5 DRAM boasts twice the speed and four times the capacity, at 4800Mpbs and 512GB respectively.¹ This next-generation high-performance memory allows networks to handle the soaring amounts of data generated by cloud computing, AI and autonomous driving systems. Unlike DDR4, DDR5 directly incorporates a power management integrated circuit (PMIC) into a dual in-line memory module (DIMM), resulting in a 30 percent increase in power efficiency on the module level and a more stable power supply.

Data centers are the main users of DDR5, since, in order to work at their full potential, they require low-power, high-performance memory as they consume large amounts of energy to perform operations and keep servers cool. Starting from the third quarter of this year, existing DRAMs for servers are set to steadily be replaced by DDR5, a shift that could help data centers stay cost-efficient and encourage sustainable, eco-friendly development.

Going beyond the performance limitations of existing DRAMs, DDR5 will be pivotal in leading data-driven innovation in terms of speed, capacity and eco-friendliness. In order to learn more about the new world DDR5 is helping to build, take a look at the video below.

¹ These figures concern modules for servers.

“S3B512C combines a fingerprint sensor, Secure Element (SE) and Secure Processor, adding an extra layer of authentication and security in payment cards,” said Kenny Han, Vice President of System LSI Marketing at Samsung Electronics. “The S3B512C is primarily designed for payment cards but can also be used in cards that require highly secured authentications such as student or employee identification, membership or building access.”

The new security IC is the industry’s first all-in-one security chip solution that reads biometric information through a fingerprint sensor, stores and authenticates encrypted data with a tamper-proof SE, and analyzes and processes data with a Secure Processor. With the three key functions integrated in a single chip, the S3B512C can help card manufacturers reduce the number of chips required and optimize card design processes for biometric payment cards.

With the new security IC embedded, biometric payment cards will allow faster and safer interactions when making purchases. The biometric authentication removes the need to enter a PIN on a keypad and also prevents fraudulent transactions made with lost or stolen cards as it verifies the cardholder’s identity using a unique and securely stored fingerprint.

The solution’s encrypted fingerprint data is stored in a SE that has received globally accredited certifications such as EMVCo and CC EAL 6+. To safely and accurately verify the user’s identity, the new IC comes with a proprietary fingerprint authentication algorithm and a Secure Processor that extracts and analyzes the unique features of the fingerprint placed on the sensor. Furthermore, the chip’s anti-spoofing technology prevents unauthorized users from circumventing the security system with illegitimate methods such as artificial fingerprints.

The research was led by Samsung Advanced Institute of Technology (SAIT) in close collaboration with Samsung Electronics Foundry Business and Semiconductor R&D Center. The first author of the paper, Dr. Seungchul Jung, Staff Researcher at SAIT, and the co-corresponding authors Dr. Donhee Ham, Fellow of SAIT and Professor of Harvard University and Dr. Sang Joon Kim, Vice President of Technology at SAIT, spearheaded the research.

In the standard computer architecture, data is stored in memory chips and data computing is executed in separate processor chips.

In contrast, in-memory computing is a new computing paradigm that seeks to perform both data storage and data computing in a memory network. Since this scheme can process a large amount of data stored within the memory network itself without having to move the data, and also because the data processing in the memory network is executed in a highly parallel manner, power consumption is substantially reduced. In-memory computing has thus emerged as one of the promising technologies to realize next-generation low-power AI semiconductor chips.

For this reason, research on in-memory computing has been intensely pursued worldwide. Non-volatile memories, in particular RRAM (Resistive Random Access Memory) and PRAM (Phase-change Random Access Memory), have been actively used for demonstrating in-memory computing. By contrast, it has so far been difficult to use MRAM ─ another type of non-volatile memory ─ for in-memory computing despite MRAM’s merits such as operation speed, endurance and large-scale production. This difficulty stems from the low resistance of MRAM, due to which MRAM cannot enjoy the power reduction advantage when used in the standard in-memory computing architecture.

(From left) Dr. Donhee Ham, Fellow of SAIT and Professor of Harvard University, Dr. Seungchul Jung, Staff Researcher at SAIT and Dr. Sang Joon Kim, Vice President of Technology at SAIT

The Samsung Electronics researchers have provided a solution to this issue by an architectural innovation. Concretely, they succeeded in developing an MRAM array chip that demonstrates in-memory computing, by replacing the standard, ‘current-sum’ in-memory computing architecture with a new, ‘resistance sum’ in-memory computing architecture, which addresses the problem of small resistances of individual MRAM devices.

Samsung’s research team subsequently tested the performance of this MRAM in-memory computing chip by running it to perform AI computing. The chip achieved an accuracy of 98% in classification of hand-written digits and a 93% accuracy in detecting faces from scenes.

By ushering MRAM ─ the memory which has already reached commercial-scale production embedded in the system semiconductor fabrication ─ into the realm of in-memory computing, this work expands the frontier of the next-generation low-power AI chip technologies.

The researchers have also suggested that not only can this new MRAM chip be used for in-memory computing, but it also can serve as a platform to download biological neuronal networks. This is along the line of the neuromorphic electronics vision that Samsung’s researchers recently put forward in a perspective paper published in the September 2021 issue of the journal Nature Electronics.

“In-memory computing draws similarity to the brain in the sense that in the brain, computing also occurs within the network of biological memories, or synapses, the points where neurons touch one another,” said Dr. Seungchul Jung, the first author of the paper. “In fact, while the computing performed by our MRAM network for now has a different purpose from the computing performed by the brain, such solid-state memory network may in the future be used as a platform to mimic the brain by modeling the brain’s synapse connectivity.”

As highlighted in this work, by building on its leading memory technology and merging it with system semiconductor technology, Samsung plans to continue to expand its leadership in next-generation computing and AI semiconductors.

The new facility will manufacture products based on advanced process technologies for application in areas such as mobile, 5G, high-performance computing (HPC) and artificial intelligence (AI). Samsung remains committed to supporting customers globally by making advanced semiconductor fabrication more accessible and meeting surging demand for leading-edge products.

“As we add a new facility in Taylor, Samsung is laying the groundwork for another important chapter in our future,” said Kinam Kim, Vice Chairman and CEO, Samsung Electronics Device Solutions Division. “With greater manufacturing capacity, we will be able to better serve the needs of our customers and contribute to the stability of the global semiconductor supply chain.”

“We are also proud to be bringing more jobs and supporting the training and talent development for local communities, as Samsung celebrates 25 years of semiconductor manufacturing in the U.S.,” Kim said.

“In addition to our partners in Texas, we are grateful to the Biden Administration for creating an environment that supports companies like Samsung as we work to expand leading-edge semiconductor manufacturing in the U.S.,” continued Kim. “We also thank the administration and Congress for their bipartisan support to swiftly enact federal incentives for domestic chip production and innovation.”

Groundbreaking will be in the first half of 2022 with the target of having the facility operational in the second half of 2024. The Taylor site will span more than 5 million square meters and is expected to serve as a key location for Samsung’s global semiconductor manufacturing capacity along with its latest new production line in Pyeongtaek, South Korea.

The total expected investment of $17 billion, including buildings, property improvements, machinery and equipment, will mark the largest-ever investment made by Samsung in the U.S. This will also bring Samsung’s total investment in the U.S. to more than $47 billion since beginning operations in the country in 1978, where the company now has over 20,000 employees across the country.

“Companies like Samsung continue to invest in Texas because of our world-class business climate and exceptional workforce,” said Governor Abbott. “Samsung’s new semiconductor manufacturing facility in Taylor will bring countless opportunities for hardworking Central Texans and their families and will play a major role in our state’s continued exceptionalism in the semiconductor industry. I look forward to expanding our partnership to keep the Lone Star State a leader in advanced technology and a dynamic economic powerhouse.”

After reviewing multiple locations within the U.S. for a potential manufacturing site, the decision to invest in Taylor was based on multiple factors, including the local semiconductor ecosystem, infrastructure stability, local government support and community development opportunities. In particular, the proximity to Samsung’s current manufacturing site in Austin, about 25 kilometers southwest of Taylor, allows the two locations to share the necessary infrastructure and resources.

This latest expansion of Samsung’s U.S. presence is expected to create over 2,000 high-tech jobs directly and thousands of related jobs once the new facility is in full operation. As part of its co-investment in the community, Samsung will also contribute financial support to create a Samsung Skills Center for the Taylor Independent School District (ISD) to help students develop skills for future careers as well as providing internships and recruiting opportunities.

(left to right) Senator John Cornyn, Governor Greg Abbott, Samsung Electronics Vice Chairman & CEO Kinam Kim

(left to right) Governor Greg Abbott, Samsung Electronics Vice Chairman & CEO Kinam Kim

(left to right) Senator John Cornyn, Governor Greg Abbott, Samsung Electronics Vice Chairman & CEO Kinam Kim

Samsung Newsroom invites you to take a tour of these five Korea-based manufacturing centers in the video below, captured via drone for an amazing birds-eye look at the innovative campuses. Check out the video below to learn more.

In a keynote speech at the 2021 Global Semiconductor Alliance (GSA) Memory+ Conference, Jinman Han, Executive Vice President and Head of Memory Global Sales and Marketing at Samsung Electronics, proclaimed that Samsung was ready to work with the entire industry to develop next-generation memory solutions that will be needed in the near future. The GSA Memory+ Conference is the Global Semiconductor Alliance’s premier event, which brings the global memory, logic and system design communities together to discuss advancing memory and system architectures.

The memory industry has long focused its efforts on satisfying demand for larger capacities and faster speeds, as well as higher bandwidth. However, in order to keep up with growing demand, the industry will need to look beyond individual innovations and assess the bigger picture. Samsung is committed to collaborating with the industry in this area and intends to lead the development of next-generation solutions.

The massive and ongoing rise in data has exposed a need for revolutionary change in memory computation and subsystems. In response, Samsung has been leading the development of technologies that can be used to give existing system architectures a much-needed update, including HBM-PIM, AXDIMM, Smart SSDs and CXL-based DRAM.

Having been the first in the memory industry to utilize EUV and HKMG process technology, Samsung is uniquely positioned to introduce in a new era of powerful memory innovations. The company has been optimizing thermal performance by advancing innovations like Hybrid Copper Bonding (HCB), while its V-NAND technologies continue to redefine how memory is stacked.

“I believe our industry will rise to this challenge not by innovating independently, but by finding solutions together,” said Han. “Going forward, we’ll develop a new IT ecosystem together that is much more powerful and sustainable, one which will be needed to architect the digital future.”

Click on the video below to watch the keynote.

Whether through your smartphone gallery, video calling app or social media network, these heartwarming moments of reminiscence are made possible by the NAND flash memory¹ solutions used in today’s smartphones and data centers.

Aside from its technical definition, we can view NAND flash as that which makes it possible to record and save so many special moments. We at Samsung Electronics are working non-stop to provide consumers with the certainty that their most valuable communications will be around indefinitely, and as a technician responsible for the continued advancement of NAND flash in the semiconductor industry, I’d like to share some of these efforts with you.

Pioneering the Era of the Uncharted 3-Dimensional (3D) Vertical Structure

If we were to view the history of the universe as one year, the existence of the human species falls stunningly short of 14 seconds before the end of this year. With more than 170 billion known galaxies constantly expanding, our Sun and the Earth are by no means at the center of our universe’s development. This same analogy can be applied to semiconductors.

If you look at a semiconductor chip smaller than the size of a fingernail through an electron microscope, there lies an entire miniature universe. Despite its thickness of just 1mm, millions of carefully constructed spaces exist within a chip in order to store huge amounts of data.

For many years, NAND flash memory solutions designed to store data featured a two-dimensional (2D) structure, where chips were scaled and laid onto flat surfaces. But these 2D structures had significant limitations in terms of the amount of data that could be stored.

After extensive research to mitigate this issue, Samsung pioneered its V-NAND (with the ‘V’ standing for vertical) flash memory, a solution that connects its cell layers through pierced holes in vertically-stacked 3D space. Samsung is the first company in the world to develop and commercialize such a memory solution.

This 3D V-NAND debuted in 2013, creating an entirely new paradigm for memory semiconductor as compared with the conventional 2D structure that had dominated the world of electronic storage for decades. The technical transformation that it enabled can be compared to the experience of people used to living in 1- or 2-story houses moving into high-rise apartments for the first time.

V-NAND: Representing Samsung’s Mastery of the Semiconductor Solution

These days the V-NAND solution, with its revolutionary vertical 3D structure, has become an industry standard since its groundbreaking introduction.

Back in 2013, the first V-NAND solution developed by Samsung featured 24 layers — but these days it has evolved to almost 200, a number that continues to grow. However, much like with high-rise apartments, simply stacking more layers on top of one another is not everything.

An apartment should be tall but also sturdy, and easily accessible via a secure and efficient elevator as the height of the building increases. What’s more, consideration of noise levels between floors must be made, and due to altitude restrictions, a building’s height is far from limitless.

The same goes for V-NAND solution. Even if the number of layers is similar, a closer look reveals minute differences in functionality and structure. In the world of semiconductors, this can be of the utmost importance as even the smallest difference leads to a tremendously different outcome.

Introducing the Industry’s Smallest Cell, Made Possible by Single-Stack Etching Technology

Let’s go back for a minute or two to 2013.

In order to overcome the limitations of a semiconductor’s planar 2D structure, Samsung developed a product that stacks up cells–in three dimensions. At that time, since the structure did not feature many layers, there was no immediate need to consider the product’s height. However, as the number of layers grew to meet increasing demand for highly-integrated, high-capacity solutions, Samsung engineers had to consider the physical limitations that arose around the product’s height.

Samsung contemplated and began to design solutions for the impending problem of V-NAND height before any other player in the semiconductor industry. The company’s 176-layer 7^th generation V-NAND is similar in height to the industry’s 6^th generation, 100+ layer V-NAND, an innovation made possible thanks to our successful development of the industry’s smallest cell size yet.

Samsung managed to reduce the cell volume up to 35% by decreasing both its surface area and height through highly innovative 3D scaling technology. Any interference between cells that might occur during such a reduction was also controlled. This enables Samsung to stack more layers at lower heights, giving the company an edge in overcoming the anticipated limitations of height.

Samsung is the only one in the industry possessing single-stack etching technology capable of stacking over 100 layers at once and interconnected through more than a billion holes. Leveraging ultra-small cell size and the company’s proprietary single-stack etching technology, Samsung is in an unparalleled position to deliver V-NAND solutions made with several hundred cell layers.

Looking Ahead: Revolutionary 7^th and 8^th Generation V-NAND Solutions

In the second half of this year, Samsung is set to showcase a consumer solid-state drive (SSD) product based on its 7^th generation V-NAND chip, a solution with the smallest cell size yet in the industry. This 7^th generation V-NAND solution is expected to meet the performance requirements of both the 4^th generation PCIe interface (PCIe Gen 4) and, later the 5^th generation (PCIe Gen 5), thanks to its maximum input-output (I/O) of 2.0 gigabits per second (Gbps). Furthermore, the company’s solution will be optimized for multitasking huge workloads, such as simultaneous 3D modeling and video editing.

Samsung is also planning to expand the use of its 7^th generation V-NAND to data center SSDs. Furthermore, in order to encourage companies running data centers to reduce power consumption, Samsung’s low-power solution can help raise power efficiency by 16% over that of its 6^th generation solution.

The company has already secured a working chip of its 8^th generation V-NAND solution featuring over 200 layers and plans to introduce it to the market in accordance with consumer demand.

The Future of Samsung’s V-NAND: Aiming for Over 1,000 Layers

In the semiconductor industry, nothing happens by chance. Pioneering a previously-unknown technology requires not only time, but also a tremendous amount of capital and investment. Samsung has managed to become the world leader in the semiconductor industry in the face of setbacks and other challenges by maintaining the passion, commitment and the sense of duty that allows us to realize a better life for all of those necessary to bring about such innovation.

Just like how the first V-NAND was introduced in 2013 after more than 10 years of research, the company will be the first to overcome the height limit that will come about one day, through our use of 3D scaling technology. Even further down the line, when Samsung’s V-NAND solutions have evolved to feature over 1,000 layers, the company will continue to ensure that its memory solutions offer the industry’s highest reliability.

A New Paradigm of Extended Reality Will Extend the Role of Semiconductors

The world is shifting to a new paradigm of extended reality (XR) thanks to the rapid advancement of technology. In fact, due to the pandemic, the time when XR is set to become a part of all our daily lives has been advanced considerably. The era in which daily lifestyles include an overlap between reality and cyber space draws ever nearer. Moreover, the refinement of IT devices and technologies will require an entirely new approach that will be completely different from anything previously seen—and the role of semiconductors will become more important than ever before.

Unquestionably, Samsung will continue to work to enable a better society by introducing innovative semiconductor products based on robust technological advancements. This will happen so you can rest assured that the precious memories stored on your electronic devices will be around for a very long time to come.

¹ Non-volatile memory semiconductors that retain stored data even when the power is switched off.

Samsung Electronics, a world leader in advanced semiconductor technology, today announced the industry’s first integrated power management ICs (PMICs) — S2FPD01, S2FPD02 and S2FPC01, for the fifth-generation double data rate (DDR5) dual in-line memory module (DIMM).

One major design improvement to the newest generation DRAM solution involves integrating the PMIC into the memory module — previous generations placed the PMIC on the motherboard — offering increased compatibility and signal integrity, and providing a more reliable and sustained performance.

For improved performance efficiency and load-transient responses, Samsung’s new PMICs for DDR5 modules have been equipped with a high-efficiency hybrid gate driver and a proprietary control design (asynchronous-based dual-phase buck control scheme).

This scheme allows the DC voltage to step down from high to low with a fast transient response to changes in the output load current and adapts the conversion accordingly to efficiently regulate its output voltage at near-constant levels. The control scheme also features both pulse width and pulse frequency modulation methods, preventing delays and malfunctions when switching modes.

“With enhanced power efficiency and low output ripple voltage, the new PMICs S2FPD01, S2FPD02 and S2FPC01 allow data centers, enterprise servers and PC applications to take full advantage of their DDR5 performance for highly demanding, memory-intensive tasks,” said Harry Cho, vice president of System LSI marketing at Samsung Electronics.

Two of Samsung’s new DDR5 DIMM PMIC solutions, the S2FPD01 and the S2FPD02, offer optimal performance for today’s data center and enterprise servers that must run heavy analytics, machine and deep learning, and other various computing tasks in real time. The FPD01 is designed for modules with low density; FPD02 for higher density.

In addition, by implementing a high-efficiency hybrid gate driver instead of a linear regulator, Samsung’s new PMICs can operate at up to 91-percent power efficiency.

The S2FPC01, Samsung’s other new PMIC, is tailored for use in desktop or laptop PCs. Designed on a 90-nanometer (nm) process node, the PMIC solution offers a more agile performance in a smaller package.

Samsung’s DDR5 DIMM power management ICs, the S2FPD01, S2FPD02 and S2FPC01, are currently being sampled to customers.

The plan represents an increase of KRW 38 trillion from the previous commitment of KRW 133 trillion announced in April 2019 and is expected to help the Company reach its goal of becoming the world leader in logic chips by 2030. For the past two years, Samsung has been closely collaborating with various semiconductor design companies, component and equipment manufacturers, as well as academia in making progress towards that goal.

The expansion of the Company’s Foundry Business will help fuel entire new industries built on next-generation technologies like AI, 5G and autonomous driving.

The Company also announced that it has begun construction of a new production line in Pyeongtaek, Korea, which is expected to be completed in the second half of 2022. The state-of-the-art facility equipped with the latest technology, P3, will produce 14-nanometer DRAM and 5-nanometer logic semiconductors, both based on extreme ultraviolet (EUV) lithography technology.

“The entire semiconductor industry is facing a watershed moment and now is the time to chart out a plan for long-term strategy and investment,” said Dr. Kinam Kim, Vice Chairman and Head of Device Solutions Division at Samsung Electronics. “For the memory business, where Samsung has maintained its undisputed leadership position, the Company will continue to make preemptive investments to lead the industry.”

As one of the world’s largest semiconductor clusters, Pyeongtaek will serve as the leading hub for next-generation innovations.

Samsung Electronics announced today that it has maintained the number six rank in Interbrand’s “Best Global Brands 2019” list with a brand value of $61.1 billion – achieving a two percent increase in brand value.

Major factors that played a critical role in Samsung’s growth were:

• Continuous launches of innovative products that suit consumers’ new lifestyle, trends, and needs including the BESPOKE refrigerator, Sero TV, and Galaxy Fold

• Strong growth potential based on future innovation technologies including 5G, AI, IoT and the automotive business

• Global number one position in the semiconductor memory market and technology leadership in the industry

Samsung’s mobile business has kept up with successful launches in the Galaxy series. The company led the industry in the foldable smartphones category by launching Galaxy Fold, and continued its effort in resonating with consumers with Samsung’s brand story “Do What You Can’t”. Its visual display business, a market leader for 13 consecutive years, not only provided new viewing experiences for consumers through QLED 8K and MicroLED displays, but also further reflected consumers’ lifestyles by introducing The Sero, The Frame and The Serif. In digital appliances, Samsung has maintained its premium market leadership position in both refrigerators and washing machines and went on to release innovative new products with differentiated consumer benefits such as BESPOKE.

Spearheading advanced 5G technology, Samsung launched its first 5G smartphone. Its 5G technology also assumes a significant role in making AI and IoT more tangible and realizable. It has also accelerated the autonomous vehicle era with its incomparable speed.

Samsung’s semiconductor memory business reinforced its market presence this year by beginning mass production of the industry’s first 12-gigabit (Gb) LPDDR5 mobile DRAM and its sixth-generation V-NAND which features the industry’s first 100+ layer single-stack design. Furthermore, Samsung has been continuously investing in R&D and expanding production facilities in the system semiconductor field.

Samsung’s market leadership and investment in innovation also contributed to this year’s successful evaluation. The company’s investments were not limited to in-house R&D, but also included efforts to expand its product ecosystem through strategic partnerships, as well as investment in startups that have cultivated new business opportunities in a variety of fields, including the automotive industry.

“We are excited that our constant efforts to provide meaningful innovations that delight consumers and help them live better lives have been well received,” said YH Lee, CMO of Samsung Electronics. “To further enhance our brand, we will continue to listen and learn from our consumers as well as lead changes in society through innovation, so that we can all thrive together.”

Following this year’s announcement of Interbrand’s Best Global Brands, the Best Global Brands summit will be held in New York City on October 23.

Samsung Electronics’ Growth in Brand Value