Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing its latest smartphone memory solution, the LPDDR5 UFS-based multichip package (uMCP). Samsung’s uMCP integrates the fastest LPDDR5 DRAM with the latest UFS 3.1 NAND flash, delivering flagship-level performance to a much broader range of smartphone users.

“Samsung’s new LPDDR5 uMCP is built upon our rich legacy of memory advancements and packaging know-how, enabling consumers to enjoy uninterrupted streaming, gaming and mixed reality experiences even in lower-tier devices,” said Young-soo Sohn, vice president of the Memory Product Planning Team at Samsung Electronics. “As 5G-compatible devices become more mainstream, we anticipate that our latest multichip package innovation will accelerate the market transition to 5G and beyond, and help to bring the metaverse into our everyday lives a lot faster.”

Based on the latest mobile DRAM and NAND interfaces, Samsung’s uMCP can deliver lightning-fast speed and high storage capacity at very low power. This combination will allow more consumers to immerse themselves in numerous 5G applications that were previously only available on premium flagship models, including advanced photography, graphics-intensive gaming and augmented reality (AR). Such flagship-level capabilities are made possible by a nearly 50% improvement in DRAM performance, from 17 gigabytes per second (GB/s) to 25GB/s, and a doubling of NAND flash performance, from 1.5GB/s to 3GB/s, over the previous LPDDR4X-based UFS 2.2 solution.

The new uMCP also helps to maximize space efficiency within a smartphone by integrating DRAM and NAND storage into a single compact package that measures only 11.5mm x 13mm, allowing more space for other features. With DRAM capacities ranging from 6 gigabytes (GB) to 12GB and storage options from 128GB to 512GB, the Samsung uMCP can be easily customized to accommodate the diverse needs of 5G smartphones throughout the mid- and high-end segments.

Samsung has successfully completed compatibility testing of the LPDDR5 uMCP with several global smartphone manufacturers, and expects its uMCP-equipped devices to hit mainstream markets starting this month.

Samsung Electronics, a world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first 12-gigabyte (GB) low-power double data rate 4X (LPDDR4X) UFS-based multichip package (uMCP). The announcement was made as part of the company’s annual Samsung Tech Day at its Device Solutions’ America headquarters in San Jose, California.

“Leveraging our leading-edge 24-gigabit (Gb) LPDDR4X chips, we can offer the highest mobile DRAM capacity of 12GB not only for high-end smartphones but also for mid-range devices,” said Sewon Chun, executive vice president of Memory Marketing at Samsung Electronics. “Samsung will continue to support our smartphone-manufacturing customers with on-time development of next-generation mobile memory solutions, bringing enhanced smartphone experiences to many more users around the globe.”

Samsung is introducing its 12GB uMCP solution just seven months after its launch of a 12GB LPDDRX package based on 16Gb DRAM. By combining four of the 24Gb LPDDR4X chips (featuring the latest 1y-nanometer process technology) and ultra-fast eUFS 2.1 NAND storage into a single package, the new mobile memory is able to break through the current 8GB package limit and provide 10+ GB memory to the broader smartphone market.*

As the trend toward larger, higher-resolution smartphone displays continues to grow, more users will benefit from Samsung’s uMCP solution when running data-intensive tasks or multitasking. With 1.5X capacity of the previous 8GB package and a data transfer rate of 4,266 megabits per second (Mbps), the 12GB uMCP can support smooth 4K video recording as well as accommodate AI and machine learning features even for mid-end smartphones.

Samsung plans to rapidly expand the availability of 10+ GB LPDDR DRAM to address the increasing needs of global smartphone makers for higher-capacity memory solutions, while reinforcing its competitive edge in the memory marketplace.

^* Editors’ Note:

12GB LPDDR4X uMCP: four 24Gb (3GB) chips + eUFS 2.1

10GB LPDDR4X uMCP: two 24Gb (3GB) chips + two 16Gb (2GB) chips + eUFS 2.1