“As market demand for denser, greater-capacity storage pushes for higher V-NAND layer counts, Samsung has adopted its advanced 3D scaling technology to reduce surface area and height, while avoiding the cell-to-cell interference that normally occurs with scaling down,” said SungHoi Hur, Executive Vice President of Flash Product & Technology at Samsung Electronics. “Our eighth-generation V-NAND will help meet rapidly growing market demand and better position us to deliver more differentiated products and solutions, which will be at the very foundation of future storage innovations.”

Samsung was able to attain the industry’s highest bit density by significantly enhancing the bit productivity per wafer. Based on the Toggle DDR 5.0 interface* — the latest NAND flash standard — Samsung’s eighth-generation V-NAND features an input and output (I/O) speed of up to 2.4 gigabits per second (Gbps), a 1.2X boost over the previous generation. This will enable the new V-NAND to accommodate the performance requirements of PCIe 4.0, and later, PCIe 5.0.

The eighth-generation V-NAND is expected to serve as the cornerstone for storage configurations that help expand the storage capacity in next-generation enterprise servers, while extending its use into the automotive market where reliability is especially critical.

* Editor’s note: Toggle DDR interface generations — 1.0 (133Mbps), 2.0 (400Mbps), 3.0 (800Mbps), 4.0 (1,200Mbps), 5.0 (2,400Mbps)

Samsung Electronics rewrote the book on digital data storage with the introduction of its next chapter: V-NAND technology. As outlined in the video above, this revolutionary new paradigm in memory semiconductors doubles processing speeds and halves power consumption in solid-state drives (SSDs) — currently used in a wide range of applications, from client PCs to enterprise servers.

Prior to V-NAND technology’s introduction, SSD memory had traditionally been increased by cramming more cells into a limited 2D plane. Because placing the cells too closely together can ultimately compromise reliability, this new approach instead stacks them three-dimensionally. To illustrate, imagine a building, where instead of cramming more rooms into the fixed space of a single floor, you increase capacity by building new levels. This construction alleviates issues associated with shrinking NAND lithography and makes it possible for enterprises to adopt SSDs with faster response rates and larger capacities.

With the layered innovation, Samsung has added new depth to memory semiconductor technology. This will not only accelerate developments in cloud computing, real-time analysis and big data networks, but also advance the era of IoT, wherein immense amounts of data will need to be processed and transferred faster than ever before.

Samsung Electronics, the world leader in advanced memory technology, announced that it is adding three TCO-optimized, high-performance SSDs, based on 3-dimensional (3D) Vertical NAND (V-NAND) technology, to its industry-leading portfolio of advanced enterprise and data center SSDs in the US. The drives are available now.

“We are providing high-end capabilities and capacities for all of our latest SSDs, something we believe will elicit a high degree of interest from OEMs and computer enthusiasts throughout the world,” said Jim Elliott, Corporate Vice President, Samsung Semiconductor, Inc. “We understand the performance needs of our customers in a rapidly expanding SSD universe and are determined to meet those needs.”

Designed for OEMs, Samsung’s new SSDs – the PM1633, PM1725 and PM953 all utilize Samsung’s 3-bit MLC (multi-level-cell) V-NAND flash memory, while providing outstanding performance and reliability, as well as high capacities.

PM1633: a 2.5” 12Gb/s SAS SSD designed for enterprise storage

Samsung’s latest SAS SSD, the PM1633, is designed to meet all requirements of Serial Attached SCSI (SAS) interface based systems. The 2.5” 12 gigabit-per-second (Gb/s) SAS SSD will be offered in 480GB, 960GB, 1.92 terabyte (TB) and 3.84TB versions.

The PM1633 delivers random read and write speeds of up to 160,000 and 18,000 IOPS respectively, and boasts sequential read and write speeds of up to 1,100MB/s and 1,000MB/s.

PM1725: can randomly read 1 million IOPS with a 6.4TB HHHL-card NVMe PCIe* SSD design

Targeting the next-generation enterprise storage market, Samsung is introducing a half-height, half-length (HHHL) card-type NVMe SSD, the PM1725, offering blazingly fast data transmission and a 3.2TB or 6.4TB storage capacity.

The PM1725 provides a random read speed of up to 1,000,000 IOPS (input output operations per second) and writes randomly at up to 120,000 IOPS. It also sequentially reads at up to 5,500 megabytes per second (MB/s) and writes sequentially at up to 1,800MB/s, which enables users to save a 5GB video in less than three seconds.

In addition, the 6.4TB PM1725 features outstanding reliability with five DWPDs (drive writes per day) for five years, which translates to writing a total of 32TBs per day during that time. This means users can write 6,400 files of 5GB-equivalent data or video every day, which represents a level of reliability quite sufficient for enterprise storage systems that have to perform ultrafast transmission of large amount of data.

PM953: an advanced NVMe SSD in M.2 and 2.5” form factors offering up to 1.92TB storage

Samsung is introducing an update to the industry’s first NVMe SSD (SM951) in an M.2 form factor that was announced earlier this year.

The new PM953 comes in NVMe interface and is available in both M.2 and 2.5” form factors to satisfy a variety of next-generation system requirements such as large-scale data centers and mobile workstations as well as ultra-slim notebook PCs and high-end desktops. The M.2 version will be offered with either 480 or 960 gigabytes (GBs), while the 2.5” version will be out in 480GB, 960GB and 1.92TB capacities.