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Semiconductors (510/515)

Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class* Process Technology

April 30, 2013

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the industry’s first production of ultra-high-speed four gigabit (Gb) low power double data rate 3 (LPDDR3) mobile DRAM, which is being produced at a 20 nanometer (nm) class* process node. The new 4Gb LPDDR3 mobile DRAM enables performance levels comparable to the standard DRAM utilized in personal computers, making it an attractive solution for demanding multimedia-intensive features on next-generation mobile devices such as high-performance smartphones and tablets.

For more information, please see :
https://www.samsung.com/semiconductor/insights/news-events/samsung-now-producing-four-gigabit-lpddr3-mobile-dram-using-20nm-class-process-technology/

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