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Samsung Electronics Begins Mass Producing Industry First 256-Gigabit, 3D V-NAND Flash Memory

August 11, 2015

Samsung Electronics, the world leader in advanced memory technology, announced that it has begun mass producing the industry’s first 256-gigabit (Gb), three-dimensional (3D) Vertical NAND (V-NAND) flash memory based on 48 layers of 3-bit multi-level-cell (MLC) arrays for use in solid state drives (SSDs).

For more information, please see :
https://news.samsung.com/us/samsung-electronics-begins-mass-producing-industry-first-256-gigabit-3d-v-nand-flash-memory/

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