Samsung Starts Producing First 512-Gigabyte Universal Flash Storage for Next-Generation Mobile Devices
December 5, 2017
Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass production of the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. Utilizing Samsung’s latest 64-layer 512-gigabit (Gb) V-NAND chips, the new 512GB eUFS package provides unparalleled storage capacity and outstanding performance for upcoming flagship smartphones and tablets.
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