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Semiconductors (253/655)

Samsung Develops Industry’s First 3rd-generation 10nm-Class DRAM for Premium Memory Applications

March 21, 2019

Samsung Electronics, the world leader in advanced memory technology, today announced that it has developed a 3rd-generation 10-nanometer-class (1z-nm) eight-gigabit (Gb) Double Data Rate 4 (DDR4) DRAM for the first time in the industry. In just 16 months since it began mass producing the 2nd-generation 10nm-class (1y-nm) 8Gb DDR4, development of 1z-nm 8Gb DDR4 without the use of Extreme Ultra-Violet (EUV) processing has pushed the limits of DRAM scaling even further.

For more information, please see: https://news.samsung.com/global/samsung-develops-industrys-first-3rd-generation-10nm-class-dram-for-premium-memory-applications

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