Samsung Electronics, a world leader in advanced memory technology, today announced that it has developed the industry’s first Low Power Compression Attached Memory Module (LPCAMM) form factor, which is expected to transform the DRAM[1] market for PCs and laptops — and potentially even data centers. Samsung’s groundbreaking development for its 7.5 gigabits-per-second (Gbps) LPCAMM has completed system verification through Intel’s platform.

Historically, PCs and laptops have conventionally used LPDDR DRAM or DDR-based So-DIMMs.[2] While LPDDR is compact, it’s permanently attached to the motherboard, making it challenging to replace during repairs or upgrades. On the other hand, So-DIMMs can be attached or detached easily but have limitations with performance and other physical features.

LPCAMM overcomes the shortcomings of both LPDDR and So-DIMMs, addressing the increased demand for more efficient yet compact devices. Being a detachable module, LPCAMM offers enhanced flexibility for PC and laptop manufacturers during the production process. Compared to So-DIMM, LPCAMM occupies up to 60% less space on the motherboard. This allows more efficient use of devices’ internal space while also improving performance by up to 50% and power efficiency by up to 70%.

LPDDR’s power-saving features have made it an attractive option for servers, since it could potentially improve total cost of operation (TCO) efficiency. However, using LPDDR can create operational difficulties such as the need to replace the entire motherboard when upgrading a server’s DRAM specifications. LPCAMM offers a solution to these challenges, creating significant potential for it to become the solution of choice for future data centers and servers.

“The energy efficiency and repairability advantages of LPCAMM make this new form factor a game changer in today’s PC market,” said Dr. Dimitrios Ziakas, Vice President of Memory & IO Technology at Intel. “We’re excited to be a part of the new standard enabling the client PC ecosystem and pave the path for future adoption and innovation in broader market segments.”

“With the growing demand in innovative memory solutions encompassing high performance, low power consumption and manufacturing flexibility across various fields, LPCAMM is expected to gain wide adoption in PCs, laptops and data centers,” said Yongcheol Bae, Executive Vice President of Memory Product Planning Team at Samsung Electronics. “Samsung is committed to actively pursuing opportunities to expand the LPCAMM solution market and collaborating closely with the industry to explore new applications for its use.”

LPCAMM is set to be tested using next-generation systems with major customers this year, and commercialization is planned for 2024.

To learn more about Samsung’s LPDDR products, please visit this address.

[1] DRAM: Dynamic Random Access Memory

[2] So-DIMM: Small outline Dual In-line Memory Module

Samsung Electronics, the world leader in advanced memory technology, today announced the market launch of ‘Flashbolt’, its third-generation High Bandwidth Memory 2E (HBM2E). The new 16-gigabyte (GB) HBM2E is uniquely suited to maximize high performance computing (HPC) systems and help system manufacturers to advance their supercomputers, AI-driven data analytics and state-of-the-art graphics systems in a timely manner.

“With the introduction of the highest performing DRAM available today, we are taking a critical step to enhance our role as the leading innovator in the fast-growing premium memory market,” said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. “Samsung will continue to deliver on its commitment to bring truly differentiated solutions as we reinforce our edge in the global memory marketplace.”

Ready to deliver twice the capacity of the previous-generation 8GB HBM2 ‘Aquabolt’, the new Flashbolt also sharply increases performance and power efficiency to significantly improve next-generation computing systems. The 16GB capacity is achieved by vertically stacking eight layers of 10nm-class (1y) 16-gigabit (Gb) DRAM dies on top of a buffer chip. This HBM2E package is then interconnected in a precise arrangement of more than 40,000 ‘through silicon via’ (TSV) microbumps, with each 16Gb die containing over 5,600 of these microscopic holes.

Samsung’s Flashbolt provides a highly reliable data transfer speed of 3.2 gigabits per second (Gbps) by leveraging a proprietary optimized circuit design for signal transmission, while offering a memory bandwidth of 410GB/s per stack. Samsung’s HBM2E can also attain a transfer speed of 4.2Gbps, the maximum tested data rate to date, enabling up to a 538GB/s bandwidth per stack in certain future applications. This would represent a 1.75x enhancement over Aquabolt’s 307GB/s.

Samsung expects to begin volume production during the first half of this year. The company will continue providing its second-generation Aquabolt lineup while expanding its third-generation Flashbolt offering, and will further strengthen collaborations with ecosystem partners in next-generation systems as it accelerates the transition to HBM solutions throughout the premium memory market.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first 12-gigabit (Gb) LPDDR5 mobile DRAM, which has been optimized for enabling 5G and AI features in future smartphones. The new mobile memory comes just five months after announcing mass production of the 12GB LPDDR4X, further reinforcing the company’s premium memory lineup. Samsung also plans to start mass producing 12-gigabyte (GB) LPDDR5 packages later this month, each combining eight of the 12Gb chips, in line with growing demand for higher smartphone performance and capacity from premium smartphone manufacturers.

“With mass production of the 12Gb LPDDR5 built on Samsung’s latest second-generation 10-nanometer (nm) class process, we are thrilled to be supporting the timely launch of 5G flagship smartphones for our customers worldwide,” said Jung-bae Lee, executive vice president of DRAM Product & Technology, Samsung Electronics. “Samsung remains committed to rapidly introducing next-generation mobile memory technologies that deliver greater performance and higher capacity, as we continue to aggressively drive growth of the premium memory market.”

Thanks to its industry-leading speed and power efficiency, Samsung’s new mobile DRAM can enable next-generation flagship smartphones to fully leverage 5G and AI capabilities like ultra-high-definition video recording and machine learning, while greatly extending the battery life.

At a data rate of 5,500 megabits per second (Mb/s), the 12Gb LPDDR5 is approximately 1.3 times faster than previous mobile memory (LPDDR4X, 4266Mb/s) that is found in today’s high-end smartphones. When made into a 12GB package, the LPDDR5 is able to transfer 44GB of data, or about 12 full-HD (3.7GB-sized) movies, in only a second. The new chip also uses up to 30 percent less power than its predecessor by integrating a new circuit design with enhanced clocking, training and low-power feature that ensures stable performance even when operating at a blazingly fast speed.

In order to manage production capacity with more flexibility, Samsung is considering transferring its 12Gb LPDDR5 production to its Pyeongtaek (Korea) campus starting next year, depending on demand from global customers. Following its introduction of the 12Gb LPDDR5 mobile DRAM, Samsung expects to also develop a 16Gb LPDDR5 next year, to solidify its competitive edge in the global memory market.

[Reference] Samsung Mobile DRAM Timeline: Production/Mass Prod.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the highest-capacity mobile DRAM – the industry’s first 12-gigabyte (GB) low-power double data rate 4X (LPDDR4X) package – optimized for tomorrow’s premium smartphones. Featuring higher capacity than most ultra-thin notebooks, the new mobile DRAM will enable smartphone users to take full advantage of all the features in next-generation smartphones.

“With mass production of the new LPDDR4X, Samsung is now providing a comprehensive lineup of advanced memory to power the new era of smartphones, from 12GB mobile DRAM to 512GB eUFS 3.0 storage,” said Sewon Chun, executive vice president of Memory Marketing at Samsung Electronics. “Moreover, with the LPDDR4X, we’re strengthening our position as the premium mobile memory maker best positioned to accommodate rapidly growing demand from global smartphone manufacturers.”

Thanks to the 12GB mobile DRAM, smartphone makers can maximize the potential of devices that feature more than five cameras and ever-increasing display sizes as well as artificial intelligence and 5G capabilities. For smartphone users, the 12GB DRAM enables more fluid multitasking and faster searches as they navigate through a myriad of apps on ultra-large high-resolution screens. Also, the 1.1-millimeter thickness allows for even sleeker smartphone designs.

The 12GB capacity was achieved by combining six 16-gigabit (Gb) LPDDR4X chips based on the second-generation 10nm-class (1y-nm) process into a single package, providing more space for the smartphone battery. In addition, by using the company’s 1y-nm technology, the new 12GB mobile memory delivers a data transfer rate of 34.1GB per second while minimizing the increase in power consumption inevitably caused by a boost in DRAM capacity.

Since introducing 1GB mobile DRAM in 2011, Samsung continues to drive capacity breakthroughs in the mobile DRAM market, moving from 6GB (in 2015) and 8GB (2016) to today’s first 12GB LPDDR4X. From its cutting-edge memory line in Pyeongtaek, Korea, Samsung plans to more than triple the supply of its 1y-nm-based 8GB and 12GB mobile DRAM during the second half of 2019 to meet the anticipated high demand.

[Reference] Samsung Mobile DRAM Timeline: Production/Mass Prod.

“The 16Gb LPDDR4X DRAM is our most advanced automotive solution yet, offering global automakers outstanding reliability, endurance, speed, capacity and energy efficiency, ,” said Sewon Chun, senior vice president of memory marketing at Samsung Electronics. “Samsung will continue to closely collaborate with manufacturers developing diverse automotive systems, in delivering premium memory solutions anywhere.”

Moving a step beyond its 20nm-class ‘Automotive Grade 2’ DRAM, which can withstand temperatures from -40°C to 105°C, Samsung’s 16Gb LPDDR4X is Automotive Grade 1-compliant, raising the high-end threshold to 125°C. By more than satisfying the rigorous on-system thermal cycling tests of global auto manufacturers, the 16Gb LPDDR4X has enhanced its reliability for a wide variety of automotive applications in many of the world’s most challenging environments.

Adding to the degree of reliability under high temperatures, production at an advanced 10nm-class node is key to enabling the 16Gb LPDDR4X to deliver its leading-edge performance and power efficiency. Even in environments with extremely high temperatures of up to 125°C, its data processing speed comes in at 4,266 megabits per second (Mbps), a 14 percent increase from the 8Gb LPDDR4 DRAM that is based on 20nm process technology, and the new memory also registers a 30 percent increase in power efficiency.

Along with a 256 gigabyte (GB) embedded Universal Flash Storage (eUFS) drive announced in February, Samsung has expanded its advanced memory solution lineup for future automotive applications with the 10nm-class 16Gb LPDDR4X DRAM, commercially available in 12Gb, 16Gb, 24Gb and 32Gb capacities. While extending its 10nm-class DRAM offerings, the company also plans on bolstering technology partnerships for automotive solutions that include vision ADAS (Advanced Driver Assistance Systems), autonomous driving, infotainment systems and gateways.

*Editor’s Note:  10nm-class is a process node between 10 and 19 nanometers

A Three-layer Stacked Image Sensor, including the Sensor itself, a Circuit, and a DRAM for Super Slow-mo and Low-light Capabilities

“We were able to achieve a readout speed that is four times faster than conventional cameras thanks to a three-layer stacked image sensor that includes the CMOS image sensor itself, a fast readout circuit, and a dedicated dynamic random-access (DRAM) memory chip, which previously was not added to image sensors,” explained Dongsoo Kim. “Integrating DRAM allowed us to overcome obstacles such as speed limits between the sensor and application processor (AP) in a high-speed camera with 960fps features.”

An enhanced camera sensor delivers useful benefits. The improved image sensor on the Galaxy S9 supports the Super Slow-mo feature in bright environments, and also decreases noise in dark environments. “The Galaxy S9 reduces noise by 30 percent under low light, compared to the previous model. Low noise, coupled with the Dual Aperture lens, which automatically adjusts to lighting conditions just as the human eye would, completes the superb low-light capabilities of the Galaxy S9’s camera,” said Sungwook Choi.

Enhancements to the image sensor, the Dual Aperture lens, and other camera features foster completely new experiences for consumers. For example, users can now capture a 0.2 second moment via the Super Slow-mo feature, and record beautiful scenery that is bright and clear even in low-light conditions.

Getting it Right through the Most Comprehensive Testing

While the Super Slow-mo prototype was already available, the developers continued to work on enhancements as well as subject the prototype to rigorous tests to prepare for commercialization. In the beginning, the function was only available through computers. So, in multiple instances, the team carted two or three laptops around Korean amusement parks in scorching summer heat. There, they tested the function’s Motion Detection feature, which automatically records the fleeting moment that the user wishes to capture.

“It wasn’t easy testing out Motion Detection for Super Slow-mo, especially with people staring at us when we brought our laptops to these amusement parks and took videos of fast-moving rides. However, we were all committed to getting the feature exactly right,” said Dongsoo Kim.

“We also shot for two hours in the middle of a mountain range, on a freezing night, to complete the low-light camera function,” recalled Sungwook Choi.

Enabling Users to Get the Most Out of their Smartphone Camera

With smartphones so intrinsic to people’s everyday lives, developing technologies that enable users to get the most of their camera was key. “The Galaxy S9’s camera focuses on ease of use of the Super Slow-mo function, from simple video generation to seamless sharing; a final GIF file typically ranges from three to 15 MBs, which is approximately six seconds in length and optimized for users to share and enjoy.

In the case of AR Emoji, My Emoji stickers can be shared via various messenger platforms. We’ve also enhanced the front camera, improving the user experience and adding fun features on top of advanced image quality. An example of this is the Selfie Focus function on the front camera, which recognizes faces from scenery based on deep learning features to provide an ideal selfie, and enables a background-blurring effect,” explained Youngmin Nam.

The future of smartphone camera development is headed in the right direction. “We will continue to strive for perfect, professional-quality images. But even more than that, our aim is to make it easier for users to share the results of our sophisticated camera technology. The ultimate goal is to develop a camera that always produces the best pictures for all users without tinkering with settings, allowing them to take photos and videos that satisfy their needs,” said Junmo Kim.