{"id":21558,"date":"2018-07-09T22:16:02","date_gmt":"2018-07-10T02:16:02","guid":{"rendered":"http:\/\/news.samsung.com\/us\/?p=21558"},"modified":"2019-06-26T15:19:09","modified_gmt":"2019-06-26T19:19:09","slug":"samsung-electronics-brings-next-wave-high-performance-storage-mass-production-fifth-generation-v-nand","status":"publish","type":"post","link":"https:\/\/news.samsung.com\/us\/samsung-fifth-generation-v-nand-mass-production\/","title":{"rendered":"Samsung Brings Next Wave of High-Performance Storage with Fifth-generation V-NAND"},"content":{"rendered":"<p><a href=\"https:\/\/img.us.news.samsung.com\/us\/wp-content\/uploads\/2018\/07\/14100959\/Samsung-Electronics-Fifth-generation-V-NAND2-e1531188942990.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-21588 size-large\" src=\"https:\/\/img.us.news.samsung.com\/us\/wp-content\/uploads\/2018\/07\/14100959\/Samsung-Electronics-Fifth-generation-V-NAND2-e1531188942990-950x396.jpg\" alt=\"Samsung Electronics Brings Next Wave of High-Performance Storage with Mass Production of Fifth-generation V-NAND\" width=\"730\" height=\"304\" srcset=\"https:\/\/img.us.news.samsung.com\/us\/wp-content\/uploads\/2018\/07\/14100959\/Samsung-Electronics-Fifth-generation-V-NAND2-e1531188942990-950x396.jpg 950w, https:\/\/img.us.news.samsung.com\/us\/wp-content\/uploads\/2018\/07\/14100959\/Samsung-Electronics-Fifth-generation-V-NAND2-e1531188942990-600x250.jpg 600w, https:\/\/img.us.news.samsung.com\/us\/wp-content\/uploads\/2018\/07\/14100959\/Samsung-Electronics-Fifth-generation-V-NAND2-e1531188942990.jpg 1910w\" sizes=\"auto, (max-width: 730px) 100vw, 730px\" \/><\/a><\/p>\n<hr \/>\n<p><strong><span class=\"press-release-open\">SEOUL, South Korea&#8211;<\/span>Samsung Electronics<\/strong>, the world leader in advanced memory technology, today announced that it has begun mass producing its fifth-generation <strong>V-NAND memory chips<\/strong> with the fastest data transfers now available. In the industry\u2019s first use of the \u2018Toggle DDR 4.0\u2019 interface, the speed for transmitting data between storage and memory over Samsung\u2019s new 256-gigabit (Gb) V-NAND has reached 1.4-gigabits per second (Gbps), a 40-percent increase from its 64-layer predecessor.<\/p>\n<p>The energy efficiency of Samsung\u2019s new V-NAND remains comparable to that of the 64-layer chip, primarily because the operating voltage has been reduced from 1.8 volts to 1.2 volts. The new V-NAND also has the fastest data write speed to date at 500-microseconds (\u03bcs), which represents about a 30-percent improvement over the write speed of the previous generation, while the response time to read-signals has been significantly reduced to 50\u03bcs.<\/p>\n<p>Packed inside Samsung\u2019s fifth-generation V-NAND are more than 90 layers of \u20183D charge trap flash (CTF) cells,\u2019 the largest amount in the industry, stacked in a pyramid structure with microscopic channel holes vertically drilled throughout. These channel holes, which are only a few hundred-nanometers (nm)-wide, contain more than 85 billion CTF cells that can store three bits of data each. This state-of-the-art memory fabrication is the result of several breakthroughs that include advanced circuit designs and new process technologies.<\/p>\n<p>Thanks to enhancements in the V-NAND\u2019s atomic layer deposition process, manufacturing productivity has also increased by more than 30 percent. The cutting-edge technique allows the height of each cell layer to be reduced by 20 percent, prevents crosstalk between cells and increases the efficiency of the chip\u2019s data processing.<\/p>\n<p>\u201cSamsung\u2019s fifth-generation V-NAND products and solutions will deliver the most advanced NAND in the rapidly growing premium memory market,\u201d <strong>said Kye Hyun Kyung, executive vice president of Flash Product and Technology at Samsung Electronics.<\/strong> \u201cIn addition to the leading-edge advances we are announcing today, we are preparing to introduce 1-terabit (Tb) and quad-level cell (QLC) offerings to our V-NAND lineup that will continue to drive momentum for next-generation NAND memory solutions throughout the global market.\u201d<\/p>\n<p>Samsung will be quickly ramping up production of its fifth-generation V-NAND to meet a wide range of market needs, as it continues to lead the high-density memory movement across critical sectors such as supercomputing, enterprise servers and the latest mobile applications such as premium smartphones.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>SEOUL, South Korea&#8211;Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing its fifth-generation V-NAND memory chips with the fastest data transfers now available. In the industry\u2019s first use of the \u2018Toggle DDR 4.0\u2019 interface, the speed for transmitting data between storage and memory over Samsung\u2019s new 256-gigabit [&hellip;]<\/p>\n","protected":false},"author":84,"featured_media":21588,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[29740,29718,17557,29739],"tags":[420,84,120],"blue-badge":[],"class_list":["post-21558","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-product-semiconductor-memory","category-product","category-semiconductor","category-product-semiconductor","tag-memory-storage","tag-semiconductor","tag-v-nand"],"acf":{"turn_off_retargeting":false},"fimg_mobile_url":"https:\/\/img.us.news.samsung.com\/us\/wp-content\/uploads\/2018\/07\/14100959\/Samsung-Electronics-Fifth-generation-V-NAND2-e1531188942990.jpg","fimg_url":"https:\/\/img.us.news.samsung.com\/us\/wp-content\/uploads\/2018\/07\/14100959\/Samsung-Electronics-Fifth-generation-V-NAND2-e1531188942990.jpg","primary_category":{"term_id":29740,"name":"Memory","slug":"product-semiconductor-memory","term_group":0,"term_taxonomy_id":29740,"taxonomy":"category","description":"","parent":29739,"count":44,"filter":"raw","term_link":"https:\/\/news.samsung.com\/us\/category\/product\/product-semiconductor\/product-semiconductor-memory\/","term_path":"product\/product-semiconductor\/product-semiconductor-memory"},"badge":false,"_links":{"self":[{"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/posts\/21558","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/users\/84"}],"replies":[{"embeddable":true,"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/comments?post=21558"}],"version-history":[{"count":0,"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/posts\/21558\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/media\/21588"}],"wp:attachment":[{"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/media?parent=21558"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/categories?post=21558"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/tags?post=21558"},{"taxonomy":"blue-badge","embeddable":true,"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/blue-badge?post=21558"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}