{"id":28012,"date":"2019-05-14T18:00:30","date_gmt":"2019-05-14T22:00:30","guid":{"rendered":"https:\/\/stage-web-alb-2136653291.us-east-1.elb.amazonaws.com\/us\/?p=28012"},"modified":"2019-11-01T13:50:01","modified_gmt":"2019-11-01T17:50:01","slug":"samsung-electronics-leadership-advanced-foundry-technology-showcased-latest-silicon-innovations-ecosystem-platform","status":"publish","type":"post","link":"https:\/\/news.samsung.com\/us\/samsung-electronics-leadership-advanced-foundry-technology-showcased-with-latest-silicon-innovations-ecosystem-platform\/","title":{"rendered":"Samsung Electronics\u2019 Leadership in Advanced Foundry Technology Showcased with Latest Silicon Innovations and Ecosystem Platform"},"content":{"rendered":"

\"Samsung<\/a><\/p>\n

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Santa Clara, California \u2013 May 14, 2019<\/b><\/span>\u00a0\u2013 Samsung Electronics Co., Ltd.<\/strong>, a world leader in advanced semiconductor technology, today announced its ongoing commitment to foundry innovation and service at the Samsung Foundry Forum 2019 USA, providing the silicon community with wide-ranging updates on technology advances that support the most demanding applications of today and tomorrow.<\/u><\/u><\/p>\n

The event, held today in Santa Clara, California, features top Samsung executives and industry experts reviewing progress on semiconductor technologies and foundry platform solutions that enable developments in artificial intelligence (AI), machine learning, 5G networking, automotive, the Internet of Things (IoT), advanced data centers and many other domains.<\/u><\/u><\/p>\n

\u201cWe stand at the verge of the Fourth Industrial Revolution, a new era of high-performance computing and connectivity that will advance the daily lives of everyone on the planet,\u201d said Dr. ES Jung, President and head of Foundry Business at Samsung Electronics.<\/strong><\/p>\n

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\"ES<\/a>

Dr. ES Jung, President and Head of Foundry Business at Samsung Electronics addresses the Samsung Foundry Forum 2019 in Santa Clara, CA.<\/p><\/div>\n

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\u201cSamsung Electronics fully understands that achieving powerful and reliable silicon solutions requires not only the most advanced manufacturing and packaging processes as well as design solutions, but also collaborative foundry-customer relationships grounded on trust and shared vision. This year\u2019s Foundry Forum is filled with compelling evidence of our commitment to progress in all those areas, and we\u2019re honored to host and converse with our industry\u2019s best and brightest,\u201d Dr. Jung added.<\/p>\n

Highlights from the U.S. Foundry Forum include:<\/u><\/u><\/p>\n

The new 3nm GAE PDK version 0.1 is ready<\/b><\/span><\/u><\/u><\/h4>\n

Samsung\u2019s 3nm Gate-All-Around (GAA) process, 3GAE, development is on track. The company noted today that its Process Design Kit (PDK) version 0.1 for 3GAE has been released in April to help customers get an early start on the design work and enable improved design competitiveness along with reduced turnaround time (TAT).<\/u><\/u><\/p>\n

Compared to 7nm technology, Samsung\u2019s 3GAE process is designed to provide up to a 45 percent reduction in chip area with 50 percent lower power consumption or 35 percent higher performance. The GAA-based process node is expected to be widely adopted in next-generation applications, such as mobile, network, automotive, Artificial Intelligence (AI) and IoT.<\/u><\/u><\/p>\n

Conventional GAA based on nanowire requires a larger number of stacks due to its small effective channel width. On the other hand, Samsung\u2019s patented version of GAA, MBCFET\u2122 (Multi-Bridge-Channel FET), uses a nanosheet architecture, enabling greater current per stack.<\/u><\/u><\/p>\n

While FinFET structures must modulate the number of fins in a discrete way, MBCFET\u2122 provides greater design flexibility by controlling the nanosheet width. In addition, MBCFET\u2122\u2019s compatibility with FinFET processes means the two can share the same manufacturing technology and equipment, which accelerates process development and production ramp-up.<\/p>\n

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Samsung recently taped out the 3GAE test vehicle design and will focus on improving its performance and power fficiency going forward.<\/p><\/div>\n

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The launch of a new SAFE<\/b>\u00a0TM<\/span><\/sup><\/b>-Cloud\u00a0<\/sup>program<\/b><\/span><\/u><\/u><\/h4>\n

As part of its ongoing efforts to support and enhance customers\u2019 entire design workflow, Samsung Electronics launched the Samsung Advanced Foundry Ecosystem Cloud (SAFE\u2122-Cloud) program. It will provide customers with a more flexible design environment through collaboration with major public cloud service providers, such as Amazon Web Services (AWS) and Microsoft Azure, as well as leading Electronic Design Automation (EDA) companies,\u00a0including Cadence and Synopsys.<\/u><\/u><\/p>\n

To date, most foundry customers have built and managed design infrastructure on their own servers. The SAFE\u2122-Cloud program reduces this burden and supports easier, faster and more efficient design efforts by providing an excellent turnkey design environment with extensive process information (PDK, design methodologies), EDA tools, design assets (IP, library) and design services.<\/u><\/u><\/p>\n

Customers can be assured of as much server and storage space as they need, as well as a safe environment optimized for chip design, due to Samsung Electronics\u2019 verification of SAFE\u2122-Cloud\u2019s security, applicability and expandability.<\/u><\/u><\/p>\n

Utilizing the SAFE\u2122-Cloud platform, Samsung was able to accelerate the development of its 7nm and 5nm cell libraries in collaboration with Synopsys. In addition, Samsung, Gaonchips \u2013 a fabless design company in Korea \u2013 and Cadence have successfully completed design verification based on the platform.<\/u><\/u><\/p>\n

\u201cMaking up-front investments in high-performance computing (HPC) servers and systems can be a challenge for a company like us,\u201d said Kyu Dong Jung, CEO of Gaonchips. \u201cSAFETM<\/span><\/sup>-Cloud offers us a very flexible design environment without requiring investment in additional infrastructure, as well as reduced design TAT. I expect this program to provide more tangible business and technical benefits to us and the entire fabless industry.\u201d<\/u><\/u><\/p>\n

Process technology roadmap and advanced packaging updates<\/span>\u00a0 \u00a0<\/b><\/u><\/u><\/h4>\n

Samsung\u2019s roadmap includes four FinFET-based processes from 7nm down to 4nm that leverage extreme ultraviolet (EUV) technology as well as 3nm GAA, or MBCFET\u2122.<\/u><\/u><\/p>\n

In the second half of this year, Samsung is scheduled to start the mass production of 6nm process devices and complete the development of 4nm process.<\/u><\/u><\/p>\n

The product design of Samsung\u2019s 5nm FinFET process, which was developed in April, is expected to be completed in the second half of this year and go under mass production in the first half of 2020.<\/u><\/u><\/p>\n

Extensions of the company\u2019s FD-SOI (FDS) process and eMRAM together with an expanded set of state-of-the-art package solutions were also unveiled at this year\u2019s Foundry Forum. Development of the successor to the 28FDS process, 18FDS, and eMRAM with 1Gb capacity will be finished this year.<\/p>\n

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