{"id":37999,"date":"2020-03-24T19:02:38","date_gmt":"2020-03-24T23:02:38","guid":{"rendered":"https:\/\/news.samsung.com\/us\/?p=37999"},"modified":"2020-03-24T18:53:01","modified_gmt":"2020-03-24T22:53:01","slug":"samsung-announces-industrys-first-euv-dram-with-shipment-of-first-million-modules","status":"publish","type":"post","link":"https:\/\/news.samsung.com\/us\/samsung-industrys-first-euv-dram-shipment-first-million-modules\/","title":{"rendered":"Samsung Announces Industry’s First EUV DRAM with Shipment of First Million Modules"},"content":{"rendered":"

EUV-based 1st-gen 10nm-class DRAM (D1x) has completed its customer evaluations;<\/em>\u00a0EUV to be fully deployed from 4th-gen 10nm-class DRAM (D1a) next year<\/em><\/span><\/strong><\/h3>\n
\"Samsung

Samsung DDR4 Module<\/p><\/div>\n

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has successfully shipped one million of the industry’s first 10nm-class (D1x) DDR4 (Double Date Rate 4) DRAM modules based on extreme ultraviolet (EUV) technology. The new EUV-based DRAM modules have completed global customer evaluations, and will open the door to more cutting-edge EUV process nodes for use in premium PC, mobile, enterprise server and datacenter applications.<\/p>\n

“With the production of our new EUV-based DRAM, we are demonstrating our full commitment toward providing revolutionary DRAM solutions in support of our global IT customers,\u201d said Jung-bae Lee, executive vice president of DRAM Product & Technology at Samsung Electronics.<\/strong> “This major advancement underscores how we will continue contributing to global IT innovation through timely development of leading-edge process technologies and next-generation memory products for the premium memory market.”<\/p>\n

\"Samsung

Samsung Electronics V1 EUV Line in Samsung Hwaseong Campus<\/p><\/div>\n

Samsung is the first to adopt EUV in DRAM production to overcome challenges in DRAM scaling. EUV technology reduces repetitive steps in multi-patterning and improves patterning accuracy, enabling enhanced performance and greater yields as well as shortened development time.<\/p>\n\n\t\t<\/div>\n\t\t<\/div>\n\t\t

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Recommended News<\/p>\n\t\t\t\t<\/div>\n\t\t\t\t

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Memory<\/p>\n\t\t\t\t\t\t\t\t

Samsung Begins Mass Production of Industry\u2019s First 16GB LPDDR5 DRAM for Next-Generation Premium Smartphones<\/h4>\n\t\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t\t<\/a>\n\t\t\t\t<\/div>\n\t\t\t<\/div>\n\t\t<\/div>\n\t\t
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EUV will be fully deployed in Samsung’s future generations of DRAM, starting with its fourth-generation 10nm-class (D1a) or the highly-advanced 14nm-class, DRAM. Samsung expects to begin volume production of D1a-based DDR5 and LPDDR5 next year, which would double manufacturing productivity of the 12-inch D1x wafers.<\/p>\n

In line with the expansion of the DDR5\/LPDDR5 market next year, the company will further strengthen its collaboration with leading IT customers and semiconductor vendors on optimizing standard specifications, as it accelerates the transition to DDR5\/LPDDR5 throughout the memory market.<\/p>\n

\"Samsung

Samsung Hwaseong Campus, one of Samsung’s main chip manufacturing bases is located in Giheung, South Korea.<\/p><\/div>\n

To better address the growing demand for next-generation premium DRAM, Samsung will start the operation of a second semiconductor fabrication line in Pyeongtaek, South Korea, within the second half of this year.<\/p>\n

Timeline of Samsung DRAM Milestones<\/strong><\/p>\n\n\n\n\n\t\n\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t
Date<\/th>Samsung DRAM Milestones<\/th>\n<\/tr>\n<\/thead>\n
2021 (TBD)<\/td>4th-gen 10nm-class (1a) EUV-based <\/td>\n<\/tr>\n
16Gb DDR5\/LPDDR5 mass production<\/td>\n<\/tr>\n
03.01.20<\/td>4th-gen 10nm-class (1a) EUV-based DRAM development<\/td>\n<\/tr>\n
09.01.19<\/td>3rd-gen 10nm-class (1z) 8Gb DDR4 mass production<\/td>\n<\/tr>\n
06.01.19<\/td>2nd-gen 10nm-class (1y) 12Gb LPDDR5 mass production<\/td>\n<\/tr>\n
03.01.19<\/td>3rd-gen 10nm-class (1z) 8Gb DDR4 development<\/td>\n<\/tr>\n
11.01.17<\/td>2nd-gen 10nm-class (1y) 8Gb DDR4 mass production<\/td>\n<\/tr>\n
09.01.16<\/td>1st-gen 10nm-class (1x) 16Gb LPDDR4\/4X mass production<\/td>\n<\/tr>\n
02.01.16<\/td>1st-gen 10nm-class (1x) 8Gb DDR4 mass production<\/td>\n<\/tr>\n
10.01.15<\/td>20nm (2z) 12Gb LPDDR4 mass production<\/td>\n<\/tr>\n
12.01.14<\/td>20nm (2z) 8Gb GDDR5 mass production<\/td>\n<\/tr>\n
12.01.14<\/td>20nm (2z) 8Gb LPDDR4 mass production<\/td>\n<\/tr>\n
10.01.14<\/td>20nm (2z) 8Gb DDR4 mass production<\/td>\n<\/tr>\n
02.01.14<\/td>20nm (2z) 4Gb DDR3 mass production<\/td>\n<\/tr>\n
02.01.14<\/td>20nm-class (2y) 8Gb LPDDR4 mass production<\/td>\n<\/tr>\n
11.01.13<\/td>20nm-class (2y) 6Gb LPDDR3 mass production<\/td>\n<\/tr>\n
11.01.12<\/td>20nm-class (2y) 4Gb DDR3 mass production<\/td>\n<\/tr>\n
09.01.11<\/td>20nm-class (2x) 2Gb DDR3 mass production<\/td>\n<\/tr>\n
07.01.10<\/td>30nm-class 2Gb DDR3 mass production<\/td>\n<\/tr>\n
02.01.10<\/td>40nm-class 4Gb DDR3 mass production <\/td>\n<\/tr>\n
07.01.09<\/td>40nm-class 2Gb DDR3 mass production<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n\n","protected":false},"excerpt":{"rendered":"

EUV-based 1st-gen 10nm-class DRAM (D1x) has completed its customer evaluations;\u00a0EUV to be fully deployed from 4th-gen 10nm-class DRAM (D1a) next year Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has successfully shipped one million of the industry’s first 10nm-class (D1x) DDR4 (Double Date Rate 4) DRAM modules based […]<\/p>\n","protected":false},"author":84,"featured_media":38004,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[29740,29718,17557,29739],"tags":[757,24457,420,84],"blue-badge":[],"class_list":["post-37999","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-product-semiconductor-memory","category-product","category-semiconductor","category-product-semiconductor","tag-dram","tag-extreme-ultraviolet-euv-technology","tag-memory-storage","tag-semiconductor"],"acf":{"turn_off_retargeting":false},"fimg_mobile_url":"https:\/\/img.us.news.samsung.com\/us\/wp-content\/uploads\/2020\/03\/24124206\/Samsung-DDR4-Module-sample.jpg","fimg_url":"https:\/\/img.us.news.samsung.com\/us\/wp-content\/uploads\/2020\/03\/24124206\/Samsung-DDR4-Module-sample.jpg","primary_category":{"term_id":29740,"name":"Memory","slug":"product-semiconductor-memory","term_group":0,"term_taxonomy_id":29740,"taxonomy":"category","description":"","parent":29739,"count":44,"filter":"raw","term_link":"https:\/\/news.samsung.com\/us\/category\/product\/product-semiconductor\/product-semiconductor-memory\/","term_path":"product\/product-semiconductor\/product-semiconductor-memory"},"badge":"Press Release","_links":{"self":[{"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/posts\/37999","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/users\/84"}],"replies":[{"embeddable":true,"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/comments?post=37999"}],"version-history":[{"count":0,"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/posts\/37999\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/media\/38004"}],"wp:attachment":[{"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/media?parent=37999"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/categories?post=37999"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/tags?post=37999"},{"taxonomy":"blue-badge","embeddable":true,"href":"https:\/\/news.samsung.com\/us\/wp-json\/wp\/v2\/blue-badge?post=37999"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}