Samsung Electronics today announced the development of its 16-gigabit (Gb) DDR5 DRAM built using the industry’s first 12-nanometer (nm)-class process technology, as well as the completion of product evaluation for compatibility with AMD.

“Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5 DRAM,” said Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “With exceptional performance and power efficiency, we expect our new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centers and AI-driven systems.”

“Innovation often requires close collaboration with industry partners to push the bounds of technology,” said Joe Macri, Senior VP, Corporate Fellow and Client, Compute and Graphics CTO at AMD. “We are thrilled to once again collaborate with Samsung, particularly on introducing DDR5 memory products that are optimized and validated on ‘Zen’ platforms.”

This technological leap was made possible through the use of a new high-κ material that increases cell capacitance and proprietary design technology that improves critical circuit characteristics. Combined with advanced, multi-layer extreme ultraviolet (EUV) lithography, the new DRAM features the industry’s highest die density, which enables a 20 percent gain in wafer productivity.

Leveraging the latest DDR5 standard, Samsung’s 12nm-class DRAM will help unlock speeds of up to 7.2 gigabits per second (Gbps). This translates into processing two 30 gigabyte (GB) UHD movies in just one second.

The new DRAM’s exceptional speed is matched by greater power efficiency. Consuming up to 23 percent less power than the previous DRAM, the 12nm-class DRAM will be an ideal solution for global IT companies pursuing more environment-friendly operations.

With mass production set to begin in 2023, Samsung plans to broaden its DRAM lineup built on this cutting-edge 12nm-class process technology into a wide range of market segments as it continues to work with industry partners to support the rapid expansion of next-generation computing.

“The 1z-based 16Gb LPDDR5 elevates the industry to a new threshold, overcoming a major developmental hurdle in DRAM scaling at advanced nodes,” said Jung-bae Lee, executive vice president of DRAM Product & Technology at Samsung Electronics. “We will continue to expand our premium DRAM lineup and exceed customer demands, as we lead in growing the overall memory market.”

Expanding Manufacturing Capacity in Pyeongtaek Complex

Spanning more than 128,900 square meters (over 1.3 million square feet) – equivalent to about 16 soccer fields – Samsung’s Pyeongtaek Line 2 is the largest-scale semiconductor production line to date.

The new Pyeongtaek line will serve as the key manufacturing hub for the industry’s most advanced semiconductor technologies, delivering cutting-edge DRAM followed by next-generation V-NAND and foundry solutions, while reinforcing the company’s leadership in the Industry 4.0 era.

Fastest, Largest-capacity Mobile Memory

Based on today’s most advanced (1z) process node, Samsung’s new 16Gb LPDDR5 is the first memory to be mass produced using EUV technology, providing the highest speed and largest capacity available in mobile DRAM.

At 6,400 megabits per second (Mb/s), the new LPDDR5 is about 16 percent faster than the 12Gb LPDDR5 (5,500Mb/s) found in most of today’s flagship mobile devices. When made into a 16GB package, the LPDDR5 can transfer about 10 5GB-sized full-HD movies, or 51.2GB of data, in one second.

Thanks to its use of the first commercial 1z process, the LPDDR5 package is 30 percent thinner than its predecessor, enabling 5G and multi-camera smartphones as well as foldable devices to pack more functionality into a slim design. The 16Gb LPDDR5 can build a 16GB package with only eight chips, whereas its 1y-based predecessor requires 12 chips (eight 12Gb chips and four 8Gb chips) to provide the same capacity.

By delivering the first 1z-based 16GB LPDDR5 package to global smartphone makers, Samsung plans to further strengthen its presence in the flagship mobile device market throughout 2021. Samsung will also expand the use of its LPDDR5 offerings into automotive applications, offering an extended temperature range to meet strict safety and reliability standards in extreme environments.

The new foundry line, which will focus on EUV-based 5 nanometer (nm) and below process technology, has just commenced construction this month and is expected to be in full operation in the second half of 2021. It will play a pivotal role as Samsung aims to expand the use of state-of-the-art process technologies across a myriad of current and next generation applications, including 5G, high-performance computing (HPC) and artificial intelligence (AI).

“This new production facility will expand Samsung’s manufacturing capabilities for sub-5nm process and enable us to rapidly respond to the increasing demand for EUV-based solutions,” said Dr. ES Jung, President and Head of Foundry Business at Samsung Electronics. “We remain committed to addressing the needs of our customers through active investments and recruitment of talents. This will enable us to continue to break new ground while driving robust growth for Samsung’s foundry business.”

Following the initial mass production of the EUV-based 7nm process in early 2019, Samsung recently added a new EUV-dedicated V1 line in Hwaseong, Korea, to its global foundry network. With the new Pyeongtaek facility starting full operation in 2021, Samsung’s foundry capacity based on EUV is expected to increase significantly.

Samsung is scheduled to start mass production of 5nm EUV process in the Hwaseong fab in the second half of this year.

With the addition of the Pyeongtaek fab, Samsung will have a total of seven foundry production lines located in South Korea and the United States, comprised of six 12-inch lines and one 8-inch line.

“With the production of our new EUV-based DRAM, we are demonstrating our full commitment toward providing revolutionary DRAM solutions in support of our global IT customers,” said Jung-bae Lee, executive vice president of DRAM Product & Technology at Samsung Electronics. “This major advancement underscores how we will continue contributing to global IT innovation through timely development of leading-edge process technologies and next-generation memory products for the premium memory market.”

Samsung is the first to adopt EUV in DRAM production to overcome challenges in DRAM scaling. EUV technology reduces repetitive steps in multi-patterning and improves patterning accuracy, enabling enhanced performance and greater yields as well as shortened development time.

EUV will be fully deployed in Samsung’s future generations of DRAM, starting with its fourth-generation 10nm-class (D1a) or the highly-advanced 14nm-class, DRAM. Samsung expects to begin volume production of D1a-based DDR5 and LPDDR5 next year, which would double manufacturing productivity of the 12-inch D1x wafers.

In line with the expansion of the DDR5/LPDDR5 market next year, the company will further strengthen its collaboration with leading IT customers and semiconductor vendors on optimizing standard specifications, as it accelerates the transition to DDR5/LPDDR5 throughout the memory market.

To better address the growing demand for next-generation premium DRAM, Samsung will start the operation of a second semiconductor fabrication line in Pyeongtaek, South Korea, within the second half of this year.

Timeline of Samsung DRAM Milestones

Samsung Electronics, a world leader in advanced semiconductor technology, today announced that its new cutting-edge semiconductor fabrication line in Hwaseong, Korea, has begun mass production.

The facility, V1, is Samsung’s first semiconductor production line dedicated to the extreme ultraviolet (EUV) lithography technology and produces chips using process node of 7 nanometer (nm) and below. The V1 line broke ground in February 2018, and began test wafer production in the second half of 2019. Its first products will be delivered to customers in the first quarter.

“Along with technology leadership and design infrastructure, manufacturing excellence is one of the most important elements of the foundry business,” said Dr. ES Jung, President and Head of Foundry Business at Samsung Electronics. “As we ramp up production, the V1 line will enhance our ability to respond to market demand and expand opportunities to support our customers.”

The V1 line is currently producing state-of-the-art mobile chips with 7 and 6nm process technology and will continue to adopt finer circuitry up to the 3nm process node.

By the end of 2020, the cumulative total investment in the V1 line will reach USD 6 billion in accordance with Samsung’s plan and the total capacity from 7nm and below process node is expected to triple from that of 2019. Together with the S3 line, the V1 line is expected to play a pivotal role in responding to fast-growing global market demand for single-digit node foundry technologies.

As semiconductor geometries grow smaller, the adoption of EUV lithography technology has become increasingly important, as it enables scaling down of complex patterns on wafers and provides an optimal choice for next-generation applications such as 5G, AI, and Automotive.

With the V1 line in operation, Samsung now has a total of six foundry production lines in South Korea and the United States, including five 12-inch lines and one 8-inch line. (see below)

* Global manufacturing sites of Samsung foundry

For me, what is most exciting about this milestone is that it highlights how far the semiconductor industry innovations have come today and provides a glimpse into the evolutions that will shape the industry of tomorrow.

Consider that the 5nm process is here in just six months after last October’s unveiling of the first commercial application of EUV in our 7nm process. It’s a rapid progress made possible in large part by running thousands of wafer layers through EUV exposure systems each week. Hands-on experience is the only way to ascend the EUV learning curve, and that body of knowledge is growing daily.

In the learning process, we’re seeing one of the biggest and broadest benefits of EUV – the simplification of design by moving away from increasingly complex multi-patterning lithography strategies. While still early, it’s increasingly clear that the reduced number of mask steps and more straightforward process is nothing short of a revolution for silicon designers. Sighs of relief will be heard as EUV will be seamlessly incorporated into the existing design architectures.

Samsung’s 5nm is the next step in the evolution of EUV. 5nm will be more efficient and feature new innovations including Samsung’s proprietary Smart Diffusion Break (SDB) transistor architecture. One of the most important aspects of 5nm is that it supports 25 percent area reduction and 10 percent performance improvement or 20 percent power reduction than 7nm.

Also, it will be largely design-rule compatible with the existing design of 7nm. Therefore, it is essentially a recharacterization of the technology, not redesign, which will substantially reduce time and the cost of implementation. This combination of technological advance and economic advantage is very much in line with a grand tradition of the semiconductor industry.

This merging of technological advancement and economic benefits is very much in line with the grand tradition in the semiconductor industry as well as technologies including 5G, AI, Connected & Automotive, Robot, etc. – constantly serving as a catalyst for the fourth industrial revolution, while simultaneously driving costs down. That’s why the evolution-moment of 5nm is, in its own unique way, as important as the innovation-moment of 7LPP.

Bringing EUV into production has been a long, challenging process. It required substantial investment of time, money, and human resources. While there were certainly moments of doubt along the way, we had to pursue our vision. The 5nm announcement offers compelling evidence for the value of the investment. As businesses from diverse fields including Foundry, Fabless, the Design House, Packaging, Tests, etc., the semiconductor ecosystem will grow stronger. This is a new chapter for the semiconductor industry, and we are excited to be part of the continued journey in innovation.

Semiconductors’ high performance and low power characteristics depend on the width of the circuits that are inserted into the chips’ limited space. In this sense, EUV realizes more detailed semiconductor circuit pattern than the existing argon fluoride (ArF) wavelength and reduces complex multi-patterning process, securing both high performance and productivity.

The EUV technology by Samsung is expected to accelerate the growth of various revolutionary products such as 5G, Artificial Intelligence and Internet of Things. Take a look at the infographic to learn more about EUV and how it is expected to contribute to the advancement of semiconductor technology.