Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing its latest smartphone memory solution, the LPDDR5 UFS-based multichip package (uMCP). Samsung’s uMCP integrates the fastest LPDDR5 DRAM with the latest UFS 3.1 NAND flash, delivering flagship-level performance to a much broader range of smartphone users.

“Samsung’s new LPDDR5 uMCP is built upon our rich legacy of memory advancements and packaging know-how, enabling consumers to enjoy uninterrupted streaming, gaming and mixed reality experiences even in lower-tier devices,” said Young-soo Sohn, vice president of the Memory Product Planning Team at Samsung Electronics. “As 5G-compatible devices become more mainstream, we anticipate that our latest multichip package innovation will accelerate the market transition to 5G and beyond, and help to bring the metaverse into our everyday lives a lot faster.”

Based on the latest mobile DRAM and NAND interfaces, Samsung’s uMCP can deliver lightning-fast speed and high storage capacity at very low power. This combination will allow more consumers to immerse themselves in numerous 5G applications that were previously only available on premium flagship models, including advanced photography, graphics-intensive gaming and augmented reality (AR). Such flagship-level capabilities are made possible by a nearly 50% improvement in DRAM performance, from 17 gigabytes per second (GB/s) to 25GB/s, and a doubling of NAND flash performance, from 1.5GB/s to 3GB/s, over the previous LPDDR4X-based UFS 2.2 solution.

The new uMCP also helps to maximize space efficiency within a smartphone by integrating DRAM and NAND storage into a single compact package that measures only 11.5mm x 13mm, allowing more space for other features. With DRAM capacities ranging from 6 gigabytes (GB) to 12GB and storage options from 128GB to 512GB, the Samsung uMCP can be easily customized to accommodate the diverse needs of 5G smartphones throughout the mid- and high-end segments.

Samsung has successfully completed compatibility testing of the LPDDR5 uMCP with several global smartphone manufacturers, and expects its uMCP-equipped devices to hit mainstream markets starting this month.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first 12-gigabit (Gb) LPDDR5 mobile DRAM, which has been optimized for enabling 5G and AI features in future smartphones. The new mobile memory comes just five months after announcing mass production of the 12GB LPDDR4X, further reinforcing the company’s premium memory lineup. Samsung also plans to start mass producing 12-gigabyte (GB) LPDDR5 packages later this month, each combining eight of the 12Gb chips, in line with growing demand for higher smartphone performance and capacity from premium smartphone manufacturers.

“With mass production of the 12Gb LPDDR5 built on Samsung’s latest second-generation 10-nanometer (nm) class process, we are thrilled to be supporting the timely launch of 5G flagship smartphones for our customers worldwide,” said Jung-bae Lee, executive vice president of DRAM Product & Technology, Samsung Electronics. “Samsung remains committed to rapidly introducing next-generation mobile memory technologies that deliver greater performance and higher capacity, as we continue to aggressively drive growth of the premium memory market.”

Thanks to its industry-leading speed and power efficiency, Samsung’s new mobile DRAM can enable next-generation flagship smartphones to fully leverage 5G and AI capabilities like ultra-high-definition video recording and machine learning, while greatly extending the battery life.

At a data rate of 5,500 megabits per second (Mb/s), the 12Gb LPDDR5 is approximately 1.3 times faster than previous mobile memory (LPDDR4X, 4266Mb/s) that is found in today’s high-end smartphones. When made into a 12GB package, the LPDDR5 is able to transfer 44GB of data, or about 12 full-HD (3.7GB-sized) movies, in only a second. The new chip also uses up to 30 percent less power than its predecessor by integrating a new circuit design with enhanced clocking, training and low-power feature that ensures stable performance even when operating at a blazingly fast speed.

In order to manage production capacity with more flexibility, Samsung is considering transferring its 12Gb LPDDR5 production to its Pyeongtaek (Korea) campus starting next year, depending on demand from global customers. Following its introduction of the 12Gb LPDDR5 mobile DRAM, Samsung expects to also develop a 16Gb LPDDR5 next year, to solidify its competitive edge in the global memory market.

[Reference] Samsung Mobile DRAM Timeline: Production/Mass Prod.

Samsung Electronics, the world leader in advanced memory technology, is dedicated to developing the future of safe autonomous driving with components and solutions that prioritize safety above all else. In order to enable effective, high-speed driver feedback, Samsung’s automotive memory solutions for processing, storing and accessing information are paving the way for seamless and safe autonomous driving experiences.

The video below introduces some of the automotive memory solutions Samsung has integrated to ensure the most effective automobile-driver feedback loop possible. The eUFS harnesses its exceptional speed capability to power on in-car systems in 2 seconds with instant data access. The AutoSSD stores map data for autonomous driving at the highest bandwidth. The LPDDR5 DRAM component makes use of a highly advanced, speed-optimized and energy-efficient circuit architecture to transfer data from automobile sensors instantaneously, and the GDDR6 DRAM allows for AI deep learning thanks to its ultra-high bandwidth.

Take a look at the video below for more information on how these powerful components are enabling the future of autonomous driving, putting safety above all else. This latest development forms part of Samsung’s commitment to investing in four key growth areas: AI, 5G technology, bio-pharmaceuticals and auto-technology components for future smart cars.

Find out more: smsng.co/semiconductor.

With India burgeoning as the world’s fastest growing smartphone market and poised as a major hub for smartphone manufacturing, the country’s mobile industry has been experiencing an extraordinary shift in all aspects of the ecosystem that show new opportunities as it progresses.

More than 300 industry experts attended the forum that included global mobile manufacturers, OEM (original equipment manufacturer) companies, component partners and analysts, and were encouraged to collaborate on ways to tread “Together Toward Tomorrow” within India’s exciting mobile landscape.

As a global technology leader and total solutions provider, Samsung emphasized that its extensive experience in supporting worldwide brands and growing local presence will provide both deep insight and differentiated value to its partners.

“Innovation is our core strength that enables us to bring technologically advanced solutions,” said Haejin Park, Vice President and Head of Device Solutions in Southeast Asia, Samsung Electronics. “We strongly believe that no achievement big or small is possible without the collective effort of all stakeholders and Samsung is committed to being a long-term partner on the road to success.”

A comprehensive portfolio of Samsung’s component solutions were highlighted at SMSF that included;

• Exynos 7 Series mobile processors for a wide range of product segments such as Exynos 9610 for high-end smartphones with intelligent vision and image processing, and Exynos 7885, 7904 and 7905 for powerful performance in more affordable devices.
• Exynos Modem 5100 that fully complies with the most current 5G standard and supports multi-mode communication in a single-chip design.
• Internet of Things (IoT) solutions from the efficient and reliable Exynos i S111 for narrowband applications to ARTIK end-to-end solutions
• ISOCELL image sensors optimized for various device requirements, such as the latest ISOCELL Plus that delivers exceptionally bright and vivid picture qualities, and ISOCELL Plug & Play solution for easy development of pre-tuned camera modules.
• Near Field Communication (NFC) and Power Management IC (PMIC) for mobile devices and accessories
• LPDDR5-based mobile DRAM built on 10-nanometer (nm)-class process technology that will be powering UHD mobile devices as well as artificial intelligence (AI) and machine learning applications.

Samsung first held its components forum in 2015 that focused on its lineup of image sensors. Recognizing the opportunities in India’s mobile market since then, the company has been expanding the scope of its offerings showcased at the Samsung Mobile Solutions Forum each year.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has successfully developed the industry’s first 10-nanometer (nm) class* 8-gigabit (Gb) LPDDR5 DRAM. Since bringing the first 8Gb LPDDR4 to mass production in 2014, Samsung has been setting the stage to transition to the LPDDR5 standard for use in upcoming 5G and Artificial Intelligence (AI)-powered mobile applications.

The newly-developed 8Gb LPDDR5 is the latest addition to Samsung’s premium DRAM lineup, which includes 10nm-class 16Gb GDDR6 DRAM (in volume production since December 2017) and 16Gb DDR5 DRAM (developed in February).

“This development of 8Gb LPDDR5 represents a major step forward for low-power mobile memory solutions,” said Jinman Han, senior vice president of Memory Product Planning & Application Engineering at Samsung Electronics. “We will continue to expand our next-generation 10nm-class DRAM lineup as we accelerate the move toward greater use of premium memory across the global landscape.”

The 8Gb LPDDR5 boasts a data rate of up to 6,400 megabits per second (Mb/s), which is 1.5 times as fast as the mobile DRAM chips used in current flagship mobile devices (LPDDR4X, 4266Mb/s). With the increased transfer rate, the new LPDDR5 can send 51.2 gigabytes (GB) of data, or approximately 14 full-HD video files (3.7GB each), in a second.

The 10nm-class LPDDR5 DRAM will be available in two bandwidths – 6,400Mb/s at a 1.1 operating voltage (V) and 5,500Mb/s at 1.05V – making it the most versatile mobile memory solution for next-generation smartphones and automotive systems. This performance advancement has been made possible through several architectural enhancements. By doubling the number of memory “banks” – subdivisions within a DRAM cell – from eight to 16, the new memory can attain a much higher speed while reducing power consumption. The 8Gb LPDDR5 also makes use of a highly advanced, speed-optimized circuit architecture that verifies and ensures the chip’s ultra-high-speed performance.

To maximize power savings, the 10nm-class LPDDR5 has been engineered to lower its voltage in accordance with the operating speed of the corresponding application processor, when in active mode. It also has been configured to avoid overwriting cells with ‘0’ values. In addition, the new LPDDR5 chip will offer a ‘deep sleep mode’, which cuts the power usage to approximately half the ‘idle mode’ of the current LPDDR4X DRAM. Thanks to these low-power features, the 8Gb LPDDR5 DRAM will deliver power consumption reductions of up to 30 percent, maximizing mobile device performance and extending the battery life of smartphones.

Based on its industry-leading bandwidth and power efficiency, the LPDDR5 will be able to power AI and machine learning applications, and will be UHD-compatible for mobile devices worldwide.

Samsung, together with leading global chip vendors, has completed functional testing and validation of a prototype 8GB LPDDR5 DRAM package, which is comprised of eight 8Gb LPDDR5 chips. Leveraging the cutting-edge manufacturing infrastructure at its latest line in Pyeongtaek, Korea, Samsung plans to begin mass production of its next-generation DRAM lineups (LPDDR5, DDR5 and GDDR6) in line with the demands of global customers.

*Editor’s Note: 10nm-class is a process node between 10 and 20 nanometers