Samsung Starts Producing First 512-Gigabyte Universal Flash Storage for Next-Generation Mobile Devices

December 5, 2017

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass production of the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. Utilizing Samsung’s latest 64-layer 512-gigabit (Gb) V-NAND chips, the new 512GB eUFS package provides unparalleled storage capacity and outstanding performance for upcoming flagship smartphones and tablets.

For more information, please see:
https://news.samsung.com/global/samsung-starts-producing-first-512-gigabyte-universal-flash-storage-for-next-generation-mobile-devices