Samsung Begins Mass Production of 16Gb LPDDR5 DRAM at World's Largest Semiconductor Line
Samsung starts shipping industry’s first third-gen 10nm-class (1z) EUV-based 16Gb LPDDR5 DRAM. Following DRAM, new Pyeongtaek Line 2 to produce next-gen V-NAND and foundry solutions.
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that its second production line in Pyeongtaek, Korea, has commenced mass production of the industry’s first 16-gigabit (Gb) LPDDR5 mobile DRAM, using extreme ultraviolet (EUV) technology. Built on Samsung’s third-generation 10nm-class (1z) process, the new 16Gb LPDDR5 boasts the highest mobile memory performance and largest capacity to enable more consumers to enjoy the full benefits of 5G and AI features in next-generation smartphones.
“The 1z-based 16Gb LPDDR5 elevates the industry to a new threshold, overcoming a major developmental hurdle in DRAM scaling at advanced nodes,” said Jung-bae Lee, executive vice president of DRAM Product & Technology at Samsung Electronics. “We will continue to expand our premium DRAM lineup and exceed customer demands, as we lead in growing the overall memory market.”