11.26.19 / Semiconductor

Samsung Receiving Industry’s First Global Recognition for Environmental Sustainability of its Semiconductor Solutions

Talking Points

  • Samsung's 512GB eUFS 3.0 memory to earn Carbon Footprint and Water Footprint Certifications from the globally accredited Carbon Trust.
  • Samsung's 1TB eUFS 2.1 and fifth-generation 512Gb V-NAND also to receive Environmental Product Declaration labels from the Korean Ministry of Environment.
  • Samsung’s 512GB eUFS 3.0 is the first mobile memory in the industry to be recognized by an international certifying organization.
Samsung 512GB eUFS 3.0
Samsung 512GB eUFS 3.0

Samsung Electronics Co., Ltd., a world leader in advanced memory technology, announced that its 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) 3.0 will be awarded Carbon Footprint and Water Footprint Certifications from the highly respected UK-based Carbon Trust during a ceremony at the British Embassy in Seoul, Korea later today. Samsung’s 512GB eUFS 3.0 is the first mobile memory in the industry to be recognized by an international certifying organization, which was made possible through the company’s extensive efforts to reduce carbon and water footprints.

The Carbon Trust is a globally accredited non-profit certification body established by the British government to accelerate the move to a sustainable, low-carbon economy. Each certification by the Carbon Trust was made after thorough assessment of the environmental impact of carbon emissions and water usage before and throughout the production cycle, based on international standards*.

Samsung 512GB eUFS 3.0 memory to earn Carbon Footprint and Water Footprint Certifications from Carbon Trust

“We are extremely pleased that our cutting-edge memory technologies not only demonstrate our capability to overcome more challenging process complexities, but also are recognized for their environmental sustainability,” said Chanhoon Park, executive vice president and head of Giheung Hwaseong Pyeongtaek Complex at Samsung Electronics. “Samsung will continue to create memory solutions that provide the highest levels of speed, capacity and power efficiency at extremely small geometries for end-users worldwide.”

Samsung’s semiconductor innovations enable sustainable production

Based on the company’s fifth-generation (90+ layers) V-NAND, Samsung’s 512GB eUFS 3.0 provides optimal speed, power efficiency and productivity to deliver twice the capacity and 2.1 times the sequential speed of its fourth generation (64 layers) V-NAND-based 256GB eUFS 2.1, while requiring 30 percent less operating voltage. Additionally, Samsung’s fifth-generation V-NAND utilizes a unique etching technology that pierces more than 90 cell layers in a single precise step. This allows the chip to have nearly 1.5 times more stacked layers than the previous generation and accommodate a 25-percent reduction in chip size. Such innovations help to minimize the overall increase in carbon and water footprints for each V-NAND cell layer.

Samsung is also being awarded Environmental Product Declaration (EPD) labels for its ‘1-terabyte (TB) eUFS 2.1’ and its ‘fifth-generation 512-gigabit (Gb) V-NAND’ by the Korean Ministry of Environment at today’s ceremony.

Samsung plans to actively expand the adoption of its highly sustainable, high-capacity premium memory solutions into many more flagship smartphones and further strengthen global partnerships for its next-generation memory technologies.

Samsung 512GB eUFS 3.0 environmental footprint (Carbon Trust)

Carbon FootprintWater Footprint
13.4 kg CO 20.31 m3 H2O
 * 13.4 kg CO2 is comparable to the amount that is absorbed by two 30-year-old pine trees in a year   

Samsung semiconductor solutions with environmental certifications

YearProductCertificationAccreditation Body
200964Gb DDR3 (56nm)Carbon FootprintKorean Ministry of Environment
20102Gb DDR3 (46nm)Carbon FootprintKorean Ministry of Environment
201016Gb NAND (42nm)Carbon FootprintKorean Ministry of Environment
20124Gb DDR3 (28nm)Low CarbonKorean Ministry of Environment
20122Gb DDR3 (35nm)Low CarbonKorean Ministry of Environment
201264Gb NAND (27nm)Low CarbonKorean Ministry of Environment
20122Gb LPDDR2 (46nm)Carbon FootprintKorean Ministry of Environment
20124Gb LPDDR2 (35nm)Carbon FootprintKorean Ministry of Environment
20122Gb GDDR5 (35nm)Carbon FootprintKorean Ministry of Environment
20128-megapixel CIS (90nm)Carbon FootprintKorean Ministry of Environment
20134Gb LPDDR3 (35nm)Carbon FootprintKorean Ministry of Environment
2013Exynos 5410 (28nm)Carbon Footprint (Industry-first)Korean Ministry of Environment
20134Gb GDDR5 (28nm)Low Carbon (Industry-first)Korean Ministry of Environment
201313-megapixel CIS (65nm)Low Carbon (Industry-first)Korean Ministry of Environment
201464Gb NAND (21nm)Low CarbonKorean Ministry of Environment
20144Gb LPDDR3 (25nm)Low CarbonKorean Ministry of Environment
20154Gb DDR4 (25nm)Carbon Footprint (Industry-first)Korean Ministry of Environment
20164Gb LPDDR4 (20nm-class)Carbon Footprint (Industry-first)Korean Ministry of Environment
201664Gb NAND (10nm-class)Low CarbonKorean Ministry of Environment
2017SSD 850 EVO (250GB)Environmental Product Declaration (EPD; Industry-first)Korean Ministry of Environment
2017SSD 850 EVO (250GB)Water Footprint (industry-first)Korean Ministry of Environment
201764Gb NAND (10nm-class)EPDKorean Ministry of Environment
2018SSD 860 EVO (4TB)EPDKorean Ministry of Environment
2018V4 NAND 512GBEPDKorean Ministry of Environment
201816Gb LPDDR4EPD (Industry-first)Korean Ministry of Environment
201816Gb LPDDR4XEPD (Industry-first)Korean Ministry of Environment
2019V5 NAND 512Gb TLCEPD (Industry-first)Korean Ministry of Environment
20191TB eUFS 2.1EPD (Industry-first)Korean Ministry of Environment
2019512GB eUFS 3.0Carbon Footprint, Water Footprint (industry-first) Carbon Trust
* PAS 2050 for carbon footprint and ISO 14046 for water footprint
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