Samsung Newsroom invites you to take a tour of these five Korea-based manufacturing centers in the video below, captured via drone for an amazing birds-eye look at the innovative campuses. Check out the video below to learn more.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first 12-gigabit (Gb) LPDDR5 mobile DRAM, which has been optimized for enabling 5G and AI features in future smartphones. The new mobile memory comes just five months after announcing mass production of the 12GB LPDDR4X, further reinforcing the company’s premium memory lineup. Samsung also plans to start mass producing 12-gigabyte (GB) LPDDR5 packages later this month, each combining eight of the 12Gb chips, in line with growing demand for higher smartphone performance and capacity from premium smartphone manufacturers.

“With mass production of the 12Gb LPDDR5 built on Samsung’s latest second-generation 10-nanometer (nm) class process, we are thrilled to be supporting the timely launch of 5G flagship smartphones for our customers worldwide,” said Jung-bae Lee, executive vice president of DRAM Product & Technology, Samsung Electronics. “Samsung remains committed to rapidly introducing next-generation mobile memory technologies that deliver greater performance and higher capacity, as we continue to aggressively drive growth of the premium memory market.”

Thanks to its industry-leading speed and power efficiency, Samsung’s new mobile DRAM can enable next-generation flagship smartphones to fully leverage 5G and AI capabilities like ultra-high-definition video recording and machine learning, while greatly extending the battery life.

At a data rate of 5,500 megabits per second (Mb/s), the 12Gb LPDDR5 is approximately 1.3 times faster than previous mobile memory (LPDDR4X, 4266Mb/s) that is found in today’s high-end smartphones. When made into a 12GB package, the LPDDR5 is able to transfer 44GB of data, or about 12 full-HD (3.7GB-sized) movies, in only a second. The new chip also uses up to 30 percent less power than its predecessor by integrating a new circuit design with enhanced clocking, training and low-power feature that ensures stable performance even when operating at a blazingly fast speed.

In order to manage production capacity with more flexibility, Samsung is considering transferring its 12Gb LPDDR5 production to its Pyeongtaek (Korea) campus starting next year, depending on demand from global customers. Following its introduction of the 12Gb LPDDR5 mobile DRAM, Samsung expects to also develop a 16Gb LPDDR5 next year, to solidify its competitive edge in the global memory market.

[Reference] Samsung Mobile DRAM Timeline: Production/Mass Prod.

In line with its focus on next-generation NPU technologies, Samsung plans to create over 2,000 related jobs worldwide by 2030, which is about 10 times the current headcount. The company will also expand upon its existing collaboration with globally distinguished research institutes and universities, and support the nurturing of future talent in the field of AI, including deep learning and neural processing.

“For the coming age of AI, Samsung is committed to delivering industry-leading advancements brought to life by our NPU technologies,” said Inyup Kang, president of System LSI Business at Samsung Electronics. “As we leverage our differentiated technology, close partnerships with global institutes and active investment in top talent, we are excited to take future AI processing capabilities to the next level.”

Samsung introduced its first NPU in the company’s premium mobile processor, the Exynos 9820, last year and plans to continue offering advanced on-device AI features for high-performance mobile chips. Applications for Samsung’s NPUs will expand into areas such as automotive processors that power in-vehicle infotainment (IVI) and advanced driver assistance systems (ADAS), as well as next-generation datacenters optimized for big data processing.

The System LSI Business and Samsung Advanced Institute of Technology — Samsung’s R&D arm — together plan to extend and evolve the company’s current NPU research into novel AI hardware technologies such as neuromorphic processors that aim to operate at the level of a human brain.

AMD and Samsung Electronics today announced a multi-year strategic partnership in ultra low power, high performance mobile graphics IP based on AMD Radeon graphics technologies. As part of the partnership, Samsung will license AMD graphics IP and will focus on advanced graphics technologies and solutions that are critical for enhancing innovation across mobile applications, including smartphones.

“As we prepare for disruptive changes in technology and discover new opportunities, our partnership with AMD will allow us to bring groundbreaking graphics products and solutions to market for tomorrow’s mobile applications,” said Inyup Kang, president of Samsung Electronics’ S.LSI Business. “We look forward to working with AMD to accelerate innovations in mobile graphics technologies that will help take future mobile computing to the next level.”

“Adoption of our Radeon graphics technologies across the PC, game console, cloud and HPC markets has grown significantly and we are thrilled to now partner with industry leader Samsung to accelerate graphics innovation in the mobile market,” said Dr. Lisa Su, AMD president and CEO. “This strategic partnership will extend the reach of our high-performance Radeon graphics into the mobile market, significantly expanding the Radeon user base and development ecosystem.”

Key terms of the partnership include:

• AMD will license custom graphics IP based on the recently announced, highly-scalable RDNA graphics architecture to Samsung for use in mobile devices, including smartphones, and other products that complement AMD product offerings.
• Samsung will pay AMD technology license fees and royalties.

A transistor is a semiconductor device used to transform the digital information coded in the binary system into electric signals. A transistor is composed of a ‘channel’ in which the electric current flows between the semiconductor’s source and its drain and a ‘gate’ for managing the electric current traveling through the channel. The gate generates binary system data by amplifying electric signals and also working as a switch. Because of this, the transistor is essentially the basic element of a semiconductor chip.

All digital information, be it in the form documents, photos or videos, is in fact a composed of the binary numeral system, which only uses two symbols, ‘0’ and ‘1’.

In order to increase the number of semiconductor chips mounted on the limited surface of a silicon (Si) substrate, the size of each semiconductor chip naturally needs to be decreased. Furthermore, in order to fit more new and complex functions into each semiconductor chip, the very basic element transistor must become smaller and its power consumption must be minimized to provide the longest possible battery lifespan, as well as reduced heat and electric charges. As electricity consumption is dependent on operating voltage, transistors have been developed so as to decrease operating voltage. Therefore, the history of the semiconductor is synonymous with the history of creating transistors that are smaller, faster and that consume less electricity.

The history of the development of the semiconductor is synonymous with the history of creating transistors that are smaller, faster and that consume less electricity. From the left, Planar Transistor, Fully Depleted (Fin) Transistor, and GAA Transistor

The most widely used transistor in the current semiconductor industry is the Metal-Oxide-Semiconductor (MOS). It consists of a metal electrode, an oxide insulator and a semiconductor channel. The first MOS transistor was of a planar architecture and was structured so that the gate and the channel made contact on one plane. But, as transistors become smaller, the distance between the source and the drain gets smaller, making it difficult for the gates to work as a switch. This is called a ‘short-channel effect’, and along with limiting voltage reduction, it means that planar transistors can only be applied to 20 or above nanometer nodes (or generations)¹.

In order to overcome the short-channel effect, the Fully Depleted transistor emerged as the next generation of transistor. This transistor uses a thin silicon (Si) channel to avoid the short-channel effect by enhancing the ability of the gate to adjust the channel. Its structure format evolved out of that of the conventional transistor (a gate on a plane channel) to become a thin, rugged structure with a standing rectangular channel that interlocks with gates on three sides. As this thin, standing channel somewhat resembles a fish’s dorsal fin, it is also called the ‘fin transistor’. Samsung has been manufacturing fin transistors since 2012 in a range of sizes, starting at just 14 nanometers.

Whereas a planar transistor only allows the channel and the gate to contact in just one plane, a fin transistor has a 3-dimensional structure that allows three sides of a channel (excluding its bottom) to come into contact with the gates. This increased contact with the gates improves semiconductor performance as well as increasing the reduction of operating voltage, solving the problems brought about by the short-channel effect.

Nevertheless, the fin transistor is now facing limitations after several generations of developments and process transitions. Nowadays, the semiconductor industry is increasingly requiring transistors that can reduce operating voltage even further. Despite the fin transistor’s 3-dimensional structure, that only three of the four sides are in contact with gates is now becoming a limitation, as transistors themselves continue to progress and subsequently get smaller.

The evolution of semiconductor transistors

In order to mitigate the limitations of existing transistors solutions, Samsung has developed a new structure, the Gate-All-Around (GAA). As the name suggests, the GAA is a structure that maximizes gates’ channel-controlling function, as all channels, including the fourth bottom one, are covered by gates. The gates provide a 360-degree coverage of the entire channel area to eliminate the short-channel effect, resulting in reducing operating voltage further.

A typical GAA transistor takes the form of a thin and long nanowire². However, a channel needs to be as wide as possible in order to allow a large amount of current to flow through it, and the small diameter of the nanowire makes obtaining this higher current flow difficult. To overcome this, Samsung created and patented their proprietary MBCFET (Multi-Bridge Channel Field Effect Transistor), an optimized version of the GAA transistor. The MBCFET increases the areas that make contact with gates by aligning wire-formed channel structures as a 2-dimensional nanosheets, which enables simpler device integration as well as increasing the electric current. Samsung’s MBCFET is a competitive transistor structure in that it not only includes the means to mitigate the short-channel effect thanks to the GAA structure, but it also increases performance by expanding the channel area.

Compared to existing 7-nanometer fin transistor process technology, the MBCFET decreases power consumption by 50%, improves performance by 30%, and reduces the area that the transistor takes up by 45%.

The development of GAA transistors, tantamount to the Industrial Revolution of semiconductor technology, is such a difficult process that Samsung is the only company currently offering a future delivery plan. Furthermore, the successful creation of the MBCFET is indicative of Samsung’s global industry-leading technological prowess. It has laid the foundation for transforming the semiconductor industry that was set to stall at the 4-nanometer scale, along with providing core technologies necessary for bringing about the fourth industrial revolution.

With this latest market-leading development, Samsung is paving the way for the future of the industry thanks to its collaborative approach and trailblazing technologies.

As a semiconductor engineer working in an industry that is entering an era of transformation brought about by new technology, I am very excited to see what the future holds.

¹Nanometer is a measurement for a semiconductor. 1 nanometer is equal to one billionth of a meter.

²An ultra-tiny line that has one nanometer in section diameter

The event, held today in Santa Clara, California, features top Samsung executives and industry experts reviewing progress on semiconductor technologies and foundry platform solutions that enable developments in artificial intelligence (AI), machine learning, 5G networking, automotive, the Internet of Things (IoT), advanced data centers and many other domains.

“We stand at the verge of the Fourth Industrial Revolution, a new era of high-performance computing and connectivity that will advance the daily lives of everyone on the planet,” said Dr. ES Jung, President and head of Foundry Business at Samsung Electronics.

“Samsung Electronics fully understands that achieving powerful and reliable silicon solutions requires not only the most advanced manufacturing and packaging processes as well as design solutions, but also collaborative foundry-customer relationships grounded on trust and shared vision. This year’s Foundry Forum is filled with compelling evidence of our commitment to progress in all those areas, and we’re honored to host and converse with our industry’s best and brightest,” Dr. Jung added.

Highlights from the U.S. Foundry Forum include:

The New 3nm GAE PDK Version 0.1 is Ready

Samsung’s 3nm Gate-All-Around (GAA) process, 3GAE, development is on track. The company noted today that its Process Design Kit (PDK) version 0.1 for 3GAE has been released in April to help customers get an early start on the design work and enable improved design competitiveness along with reduced turnaround time (TAT).

Compared to 7nm technology, Samsung’s 3GAE process is designed to provide up to a 45 percent reduction in chip area with 50 percent lower power consumption or 35 percent higher performance. The GAA-based process node is expected to be widely adopted in next-generation applications, such as mobile, network, automotive, Artificial Intelligence (AI) and IoT.

Conventional GAA based on nanowire requires a larger number of stacks due to its small effective channel width. On the other hand, Samsung’s patented version of GAA, MBCFET (Multi-Bridge-Channel FET), uses a nanosheet architecture, enabling greater current per stack.

While FinFET structures must modulate the number of fins in a discrete way, MBCFET provides greater design flexibility by controlling the nanosheet width. In addition, MBCFET’s compatibility with FinFET processes means the two can share the same manufacturing technology and equipment, which accelerates process development and production ramp-up.

Samsung recently taped out the 3GAE test vehicle design and will focus on improving its performance and power efficiency going forward.

For more information, please refer to the Newsroom links for GAA infographic and video clip.

The Launching of a New SAFE–Cloud Program

As part of its ongoing efforts to support and enhance customers’ entire design workflow, Samsung Electronics launched the Samsung Advanced Foundry Ecosystem Cloud (SAFE-Cloud) program. It will provide customers with a more flexible design environment through collaboration with major public cloud service providers, such as Amazon Web Services (AWS) and Microsoft Azure, as well as leading Electronic Design Automation (EDA) companies, including Cadence and Synopsys.

To date, most foundry customers have built and managed design infrastructure on their own servers. The SAFE-Cloud program reduces this burden and supports easier, faster and more efficient design efforts by providing an excellent turnkey design environment with extensive process information (PDK, design methodologies), EDA tools, design assets (IP, library) and design services.

Customers can be assured of as much server and storage space as they need, as well as a safe environment optimized for chip design, due to Samsung Electronics’ verification of SAFE-Cloud’s security, applicability and expandability.

Utilizing the SAFE-Cloud platform, Samsung was able to accelerate the development of its 7nm and 5nm cell libraries in collaboration with Synopsys. In addition, Samsung, Gaonchips – a fabless design company in Korea – and Cadence have successfully completed design verification based on the platform.

“Making up-front investments in high-performance computing (HPC) servers and systems can be a challenge for a company like us,” said Kyu Dong Jung, CEO of Gaonchips. “SAFE-Cloud offers us a very flexible design environment without requiring investment in additional infrastructure, as well as reduced design TAT. I expect this program to provide more tangible business and technical benefits to us and the entire fabless industry.”

Process Technology Roadmap and Advanced Packaging Updates  

Samsung’s roadmap includes four FinFET-based processes from 7nm down to 4nm that leverage extreme ultraviolet (EUV) technology as well as 3nm GAA, or MBCFET.

In the second half of this year, Samsung is scheduled to start the mass production of 6nm process devices and complete the development of 4nm process.

The product design of Samsung’s 5nm FinFET process, which was developed in April, is expected to be completed in the second half of this year and go under mass production in the first half of 2020.

Extensions of the company’s FD-SOI (FDS) process and eMRAM together with an expanded set of state-of-the-art package solutions were also unveiled at this year’s Foundry Forum. Development of the successor to the 28FDS process, 18FDS, and eMRAM with 1Gb capacity will be finished this year.

The Exynos i T100 enhances the security and reliability of devices designed for short-range communications, and has been developed to be used in smart home or business environment ecosystems – from smart lighting and temperature control to home security and monitoring and fire and gas detectors. Created with multiple communication protocols, strong security capabilities and an integrated processor and memory chip package, the Exynos i T100, along with the Exynos i T200 and Exynos i S111, provides comprehensive connectivity for today’s IoT devices.

Check out the infographic below for more information on the full line-up of Samsung’s IoT solutions and capabilities.

For me, what is most exciting about this milestone is that it highlights how far the semiconductor industry innovations have come today and provides a glimpse into the evolutions that will shape the industry of tomorrow.

Consider that the 5nm process is here in just six months after last October’s unveiling of the first commercial application of EUV in our 7nm process. It’s a rapid progress made possible in large part by running thousands of wafer layers through EUV exposure systems each week. Hands-on experience is the only way to ascend the EUV learning curve, and that body of knowledge is growing daily.

In the learning process, we’re seeing one of the biggest and broadest benefits of EUV – the simplification of design by moving away from increasingly complex multi-patterning lithography strategies. While still early, it’s increasingly clear that the reduced number of mask steps and more straightforward process is nothing short of a revolution for silicon designers. Sighs of relief will be heard as EUV will be seamlessly incorporated into the existing design architectures.

Samsung’s 5nm is the next step in the evolution of EUV. 5nm will be more efficient and feature new innovations including Samsung’s proprietary Smart Diffusion Break (SDB) transistor architecture. One of the most important aspects of 5nm is that it supports 25 percent area reduction and 10 percent performance improvement or 20 percent power reduction than 7nm.

Also, it will be largely design-rule compatible with the existing design of 7nm. Therefore, it is essentially a recharacterization of the technology, not redesign, which will substantially reduce time and the cost of implementation. This combination of technological advance and economic advantage is very much in line with a grand tradition of the semiconductor industry.

This merging of technological advancement and economic benefits is very much in line with the grand tradition in the semiconductor industry as well as technologies including 5G, AI, Connected & Automotive, Robot, etc. – constantly serving as a catalyst for the fourth industrial revolution, while simultaneously driving costs down. That’s why the evolution-moment of 5nm is, in its own unique way, as important as the innovation-moment of 7LPP.

Bringing EUV into production has been a long, challenging process. It required substantial investment of time, money, and human resources. While there were certainly moments of doubt along the way, we had to pursue our vision. The 5nm announcement offers compelling evidence for the value of the investment. As businesses from diverse fields including Foundry, Fabless, the Design House, Packaging, Tests, etc., the semiconductor ecosystem will grow stronger. This is a new chapter for the semiconductor industry, and we are excited to be part of the continued journey in innovation.

Samsung Electronics, a world leader in advanced semiconductor technology, today announced that its 5G communication solutions are in mass production for the latest premium mobile devices. The 5G multi-mode chipsets include the previously-introduced Exynos Modem 5100 as well as a new single-chip radio frequency transceiver, the Exynos RF 5500, and supply modulator solution, the Exynos SM 5800, all supporting 5G New Radio (5G-NR) sub-6-gigahertz (GHz) spectrum and legacy radio access technologies that provide mobile device manufacturers with optimum network communication solutions for the 5G era.

“Samsung has been an innovator in mobile communication technologies with a strong portfolio of market-proven solutions, and we are well-prepared to extend our leadership into 5G,” said Inyup Kang, president of System LSI Business at Samsung Electronics. “Our multi-mode solutions, the Exynos Modem 5100, Exynos RF 5500 and Exynos SM 5800 will together enable powerful yet energy-efficient 5G performance along with the network versatility that allows users to stay connected wherever they are.”

Exynos Modem 5100 is Samsung’s first 5G modem solution that had completed preparations for commercialization in August, 2018, with a successful over-the-air (OTA) 5G-NR data call test. The modem supports virtually all networks from 5G’s sub-6GHz and mmWave spectrums to 2G GSM/CDMA, 3G WCDMA, TD-SCDMA, HSPA and 4G LTE networks in a single chip.

For reliable and power-efficient performance, the modem is paired with RF and supply modulator solutions, Exynos RF 5500 and Exynos SM 5800 respectively.

Samsung’s Exynos RF 5500 supports legacy networks and 5G-NR sub-6GHz networks in a single chip, offering added flexibility in smartphone designs, especially for today’s premium mobile devices. RF transceivers are key components that allow smartphones to transmit and receive data over the cellular network. When transmitting voice or data from a smartphone to a carrier, the RF up-converts the modem’s baseband signal to high GHz-range cellular frequencies so that data can be sent swiftly over the connected network. Vice versa, when receiving, the signal is down-converted by the RF to baseband frequencies for it to be processed by the modem. The Exynos RF 5500 has 14 receiver paths for download, and supports 4×4 MIMO (Multiple-Input, Multiple-Output) and higher-order 256 QAM (Quadrature Amplitude Modulation) scheme to maximize the data transfer rate over the 5G network.

The Exynos SM 5800 is a low-power supply modulator solution for 2G to 5G-NR sub-6GHz that supports up to 100MHz envelope-tracking (ET) bandwidths. As the possibilities for richer content with higher data rates open up with the arrival of 5G, maintaining a highly efficient RF has become more critical in ensuring a longer battery life in a mobile device. The Exynos SM 5800 demonstrates up to a 30-percent power reduction by dynamically adjusting the supply voltage according to the modem’s RF input signal. With an advanced power optimizing ET solution for RF, data can be transmitted more efficiently and reliably over the incredibly fast 5G network.

Both the Exynos RF 5500 and SM 5800’s technological breakthroughs have been recognized by the International Solid-State Circuits Conference (ISSCC) committee and were presented at ISSCC 2019 held at San Francisco last February.

As the industry moves forward to unfold and discover the full benefits of 5G, Samsung plans to continue pushing for innovation in mobile communication technologies, including RF transceiver and phased array solutions for mmWave along with 5G-embedded mobile processors, that will further drive the proliferation of new applications in mobile devices and emerging industries.

As 1z-nm becomes the industry’s smallest memory process node, Samsung is now primed to respond to increasing market demands with its new DDR4 DRAM that has more than 20-percent higher manufacturing productivity compared to the previous 1y-nm version.

Mass production of the 1z-nm 8Gb DDR4 will begin within the second half of this year to accommodate next-generation enterprise servers and high-end PCs expected to be launched in 2020.

“Our commitment to break through the biggest challenges in technology has always driven us toward greater innovation. We are pleased to have laid the groundwork again for stable production of next-generation DRAM that ensures the highest performance and energy efficiency,” said Jung-bae Lee, executive vice president of DRAM product & technology, Samsung Electronics. “As we build out our 1z-nm DRAM lineup, Samsung is aiming to support its global customers in their deployment of cutting-edge systems and enabling proliferation of the premium memory market.”

Samsung’s development of the 1z-nm DRAM paves the way for an accelerated global IT transition to next-generation DRAM interfaces such as DDR5, LPDDR5 and GDDR6 that will power a wave of future digital innovation. Subsequent 1z-nm products with higher capacities and performance will allow Samsung to strengthen its business competitiveness and solidify its leadership in the premium DRAM market for applications that include servers, graphics and mobile devices.

Following a full validation with a CPU manufacturer for eight-gigabyte (GB) DDR4 modules, Samsung will be actively collaborating with global customers to deliver an array of upcoming memory solutions.

In line with current industry needs, Samsung plans to increase the portion of its main memory production at its Pyeongtaek site, while working with its global IT clients to meet the rising demand for state-of-the-art DRAM products.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the highest-capacity mobile DRAM – the industry’s first 12-gigabyte (GB) low-power double data rate 4X (LPDDR4X) package – optimized for tomorrow’s premium smartphones. Featuring higher capacity than most ultra-thin notebooks, the new mobile DRAM will enable smartphone users to take full advantage of all the features in next-generation smartphones.

“With mass production of the new LPDDR4X, Samsung is now providing a comprehensive lineup of advanced memory to power the new era of smartphones, from 12GB mobile DRAM to 512GB eUFS 3.0 storage,” said Sewon Chun, executive vice president of Memory Marketing at Samsung Electronics. “Moreover, with the LPDDR4X, we’re strengthening our position as the premium mobile memory maker best positioned to accommodate rapidly growing demand from global smartphone manufacturers.”

Thanks to the 12GB mobile DRAM, smartphone makers can maximize the potential of devices that feature more than five cameras and ever-increasing display sizes as well as artificial intelligence and 5G capabilities. For smartphone users, the 12GB DRAM enables more fluid multitasking and faster searches as they navigate through a myriad of apps on ultra-large high-resolution screens. Also, the 1.1-millimeter thickness allows for even sleeker smartphone designs.

The 12GB capacity was achieved by combining six 16-gigabit (Gb) LPDDR4X chips based on the second-generation 10nm-class (1y-nm) process into a single package, providing more space for the smartphone battery. In addition, by using the company’s 1y-nm technology, the new 12GB mobile memory delivers a data transfer rate of 34.1GB per second while minimizing the increase in power consumption inevitably caused by a boost in DRAM capacity.

Since introducing 1GB mobile DRAM in 2011, Samsung continues to drive capacity breakthroughs in the mobile DRAM market, moving from 6GB (in 2015) and 8GB (2016) to today’s first 12GB LPDDR4X. From its cutting-edge memory line in Pyeongtaek, Korea, Samsung plans to more than triple the supply of its 1y-nm-based 8GB and 12GB mobile DRAM during the second half of 2019 to meet the anticipated high demand.

[Reference] Samsung Mobile DRAM Timeline: Production/Mass Prod.

Samsung Electronics the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) 3.0 for next-generation mobile devices. In line with the latest eUFS 3.0 specification, the new Samsung memory delivers twice the speed of the previous eUFS storage (eUFS 2.1), allowing mobile memory to support seamless user experiences in future smartphones with ultra-large high-resolution screens.

“Beginning mass production of our eUFS 3.0 lineup gives us a great advantage in the next-generation mobile market to which we are bringing a memory read speed that was before only available on ultra-slim laptops,” said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. “As we expand our eUFS 3.0 offerings, including a 1-Terabyte (TB) version later this year, we expect to play a major role in accelerating momentum within the premium mobile market.”

Samsung produced the industry-first UFS interface with eUFS 2.0 in January, 2015, which was 1.4 times faster than the mobile memory standard at that time, referred to as the embedded multi-media card (eMMC) 5.1. In just four years, the company’s newest eUFS 3.0 matches the performance of today’s ultra-slim notebooks.

Samsung’s 512GB eUFS 3.0 stacks eight of the company’s fifth-generation 512-gigabit (Gb) V-NAND die and integrates a high-performance controller. At 2,100 megabytes-per-second (MB/s), the new eUFS doubles the sequential read rate of Samsung’s latest eUFS memory (eUFS 2.1) which was announced in January. The new solution’s blazing read speed is four times faster than that of a SATA solid state drive (SSDs) and 20 times faster than a typical microSD card, allowing premium smartphones to transfer a Full HD movie to a PC in about three seconds*. In addition, the sequential write speed also has been improved by 50 percent to 410MB/s, which is equivalent to that of a SATA SSD.

The new memory’s random read and write speeds provide up to a 36-percent increase over the current eUFS 2.1 industry specification, at 63,000 and 68,000 Input/Output Operations Per Second (IOPS), respectively. With the significant gains in random read and writes that are more than 630 times faster than general microSD cards (100 IOPS), a number of complex applications can be simultaneously run, while achieving enhanced responsiveness, especially on the newest generation of mobile devices.

Following the 512GB eUFS 3.0 as well as a 128GB version that are both launching this month, Samsung plans to produce 1TB and 256GB models in the second half of the year, to further help global device manufacturers in better delivering tomorrow’s mobile innovations.

* The calculation is based on transferring a 3.7GB full HD movie file from a mobile device with the 512GB eUFS 3.0 to a PC with a non-volatile memory express (NVMe) interface SSD.

※ Reference: Comparison of Samsung’s internal memory performance

The Exynos 9820 has an integrated neural processing unit (NPU) to deliver deep learning capabilities whilst using less power. With the NPU, Exynos 9820 can perform AI-related functions seven times faster than its predecessor based on TOPS (Tera Operations Per Second).¹

This allows the processor to implement AI anywhere, anytime through its on-device artificial intelligence. With on-device AI, a mobile device can perform artificial intelligent activities with lower latency, better power efficiency, and stronger security than when utilizing the cloud. It enables the mobile device to offer new and improved artificial intelligence features such as personal assistant services, augmented reality and enhanced camera functions.

A desktop-like experience on a mobile device is now reality thanks to next-generation mobile processors that can achieve exceptional computing power. The Exynos 9820 features tri-cluster octa-core CPU architecture consisting of two Samsung custom cores for running heavy computational tasks, two Arm^® Cortex^®-A75 cores for optimal performance, and four Cortex-A55 cores for everyday tasks, thus heightening processing power. Samsung’s fourth-generation custom CPU is implemented with enhanced memory access capability and advanced architecture design, improving the single core performance by up to 20 percent over its predecessor.¹  Furthermore, tri-cluster architecture features an intelligent task scheduler to optimize the balance between performance and efficiency for longer lasting battery life.

The Exynos 9820 integrates an LTE-Advanced Pro modem for lightning-fast mobile broadband speeds. To achieve fast downloads, seamless video streaming, and smooth online gameplay, the modem supports LTE category 20 with 8x carrier aggregation enabling downlink speed of up to 2.0Gbps.²

The modem also enhances stability and speed even further through diverse advanced modem technologies including 4×4 Multiple-Input, Multiple-Output (MIMO), 256-QAM (Quadrature Amplitude Modulation), and Enhanced Licensed-Assisted Access (eLAA). Furthermore, the Exynos Modem 5100, Samsung’s 5G cellular modem, can be paired with the Exynos 9820 to support the 5G network.

For an immersive gaming experience on the go, the Exynos 9820 comes with a high-performance Mali-G76 MP12 graphic processing unit (GPU). Featuring wider execution engines – with double the number of lanes than its predecessor – alongside cutting-edge graphics compression techniques and advanced APIs support, the Exynos 9820 provides dramatic uplifts in both performance and efficiency for complex graphics. The Exynos 9820 offers up to 40 percent improvement in performance or 35 percent enhancement in power efficiency.¹

The Exynos 9820 is engineered to capture clear images at any time of the day. With its advanced image signal processor (ISP) for multi-camera solutions, the Exynos 9820 supports diverse cutting-edge photography functions which are further enhanced by AI-capabilities. The Exynos 9820’s ISP has increased the maximum number of sensors it can support from four to five, facilitating flexible multi-camera solutions on a mobile device with diverse functionalities such as optical zoom and bokeh effect. This means that, when a user clicks the shutter button within the camera app, billions of arithmetic operations are performed by the advanced ISP to generate better focus, accurate exposure and white balance, vivid color and less noise, producing amazing photographs.

The Exynos 9820 is also built to transform those special moments into spectacular videos. As recording a video in high-resolution can occupy a large space within a limited storage capacity, a processor must compress the video with a video codec in order to store and transfer it efficiently. The advanced Multi-Format Codec (MFC) in the Exynos 9820 processor can encode and compress 8K video into a smaller file size thanks to its 10-bit HEVC codec, which delivers highly efficient video compression with 10-bit color support. This means users need not worry about running out of storage space – even when recording videos in high resolution. Furthermore, the 10-bit HEVC codec can generate 1,024 different tones for each primary color, which translates into 1.07 billion color combinations.

The advanced display subsystem is built to present high quality multimedia content on an HDR display. The HDR display reproduces lifelike colors with a high level of accuracy. Notably, the Exynos 9820 supports HDR10+, a new open standard for HDR video which employs dynamic tone mapping allowing scenes to be optimized individually. With this powerful display subsystem, the Exynos 9820 can support a 4K UHD display on a mobile device, offering mesmerizing multimedia experiences.

Now these advanced benefits allow people to run daily errands and perform personal tasks using their mobile device alone and they must be accompanied by strong security. The Exynos 9820 features a physically unclonable function (PUF), also known as a digital fingerprint, to manage personal data in perfect isolation, making for more reliable security. PUF generates an unclonable key for data encryption by using the unique physical characteristics of each chip. While the PUF creates a unique digital fingerprint, the security subsystem is a secure key manager that supports other security protocols, such as key generation, storage and derivation.

The Exynos 9820 is built on an advanced FinFET process with a low power design scheme, meaning all of this can be done while consuming less power. The 8nm LPP (Low Power Plus) FinFET process reduces power consumption by up to 10 percent compared to 10nm LPP process.³ The Exynos 9820 also optimizes the power consumptions of the CPU and the GPU through reductions in idle and leakage power and operating voltage.

¹ Tested internally on the Exynos 9820 and the Exynos 9810

² Actual speed may differ by country and carrier.

³ Tested internally on Samsung’s 8nm LPP and 10nm LPP

※ Arm, Cortex and Mali are registered trademarks or trademarks of Arm Limited (or its subsidiaries) in the US and/or elsewhere.

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