The new chipsets were announced today at “Samsung Networks: Redefined,” the company’s virtual public event highlighting notable 5G accomplishments and new solutions for network transformation. At the event, Samsung emphasized its experience in developing in-house chipsets for more than two decades and reiterated the significant investments behind the launch of multiple generations of chipsets starting from 3G, leading to today’s cutting-edge 5G solutions.

The newly introduced chipsets are designed to take Samsung’s next-generation 5G lineup to a new level, boosting performance, increasing power efficiency, and reducing the size of the 5G solutions.

Samsung’s newly-introduced chips are:

• 3^rd Generation mmWave RFIC:
  This new chip follows prior generation RFICs from Samsung. The first generation, introduced in 2017, powered the company’s 5G FWA solutions supporting the world’s first 5G home broadband service in the U.S. Two years later, the second generation powered Samsung’s 5G Compact Macro, the industry’s first mmWave 5G NR radio, which has since been widely deployed in the U.S.
  
  Samsung’s 3^rd generation RFIC chip supports both 28GHz and 39GHz spectrums and will be embedded in Samsung’s next-generation 5G Compact Macro. The chip incorporates advanced technology that reduces antenna size by nearly 50%, maximizing the 5G radio’s interior space. Moreover, the latest RFIC chip improves power consumption, resulting in a more compact-sized, lightweight 5G radio. Lastly, output power and coverage of the new RFIC chip have increased, doubling the output power of the next generation 5G Compact Macro.

• 2^nd Generation 5G Modem SoC:
  Samsung’s first 5G modem SoCs, introduced in 2019, powered the company’s new 5G baseband unit and Compact Macro. To date, more than 200,000 of this 5 G modem SoCs have been shipped.
  
  This new second-generation chip will enable Samsung’s forthcoming baseband unit to have twice the capacity, while cutting power consumption in half per cell, in comparison to the previous generation. Moreover, supporting both below-6GHz and mmWave spectrums, it offers beamforming and increased power efficiency for Samsung’s next-generation 5G Compact Macro and Massive MIMO radio, while reducing the size for both solutions.

• DFE-RFIC Integrated Chip:
  In 2019, the first Digital/Analog Front End (DAFE) chip was introduced by Samsung, serving as an essential component of 5G radios (including Samsung’s 5G Compact Macro), by converting analog-to-digital and vice versa, and supporting both 28GHz and 39GHz spectrums.
  
  This new chip combines RFIC and DFE functions for both below-6GHz and mmWave spectrums. By integrating these functions, the chip not only doubles frequency bandwidth but also reduces the size and increases output power for Samsung’s next-generation solutions, including 5G Compact Macro.

“This newly unveiled chipset is the fundamental component of our state-of-art 5G solutions, developed through a long-standing R&D effort that enables Samsung to be at the forefront of delivering cutting-edge 5G technologies,” said Junehee Lee, Executive Vice President and Head of R&D, Networks Business at Samsung Electronics. “As one of the largest semiconductor companies in the world, we are committed to developing the most innovative chips for the next phase of 5G advancement, integrated with the features mobile operators seek to stay competitive.”

“5G chipsets are critical to achieving the performance capabilities required for next-generation network deployments,” stated Anshel Sag, Moor Insights & Strategy. “Samsung’s long-standing expertise in developing chipsets in-house is a key differentiator, positioning it as a leader in the delivery of 5G network solutions with the features and benefits operators seek to advance their 5G strategies.”

Samsung has pioneered the successful delivery of 5G end-to-end solutions including chipsets, radios, and core. This includes the creation and shipment of innovative chips from Samsung’s manufacturing facility in Austin, Texas. Through ongoing research and development, Samsung drives the industry to advance 5G networks with its market-leading product portfolio from fully virtualized RAN and Core to private network solutions and AI-powered automation tools. The company is currently providing network solutions to mobile operators that deliver connectivity to hundreds of millions of users around the world.

With comprehensive process technology roadmap updates down to 3-nanometer (nm) at the annual ‘Samsung Foundry Forum (SFF) 2018 USA’, Samsung Foundry is focused on providing customers with the tools necessary to design and manufacture powerful, yet energy-efficient system-on-chips (SoC) for a wide range of applications.

“The trend toward a smarter, connected world has the industry demanding more from silicon providers,” said Charlie Bae, executive vice president and head of the Foundry Sales & Marketing Team at Samsung Electronics. “To meet that demand, Samsung Foundry is powering innovation at the silicon level that will ultimately give people access to data, analysis, and insight in new and previously unthought-of ways to make human lives better. It is imperative for us to accomplish the first-time silicon success for our customers’ next-generation chip designs.”

Process Technology Roadmap Updates

• 7LPP (7nm Low Power Plus): 7LPP, the first semiconductor process technology to use an EUV lithography solution, is scheduled to be ready for production in the second half of this year. Key IPs are under development, aiming to be completed by the first half of 2019.

• 5LPE (5nm Low Power Early): Through further smart innovation from the 7LPP process, 5LPE will allow greater area scaling and ultra-low power benefits.

• 4LPE/LPP (4nm Low Power Early/Plus): The use of highly mature and verified FinFET technology will be extended to the 4nm process. As the last generation of FinFET, 4nm provides a smaller cell size, improved performance, and faster ramp-up to the stable level of yield by adopting proven 5LPE, supporting easy migration.

• 3GAAE/GAAP (3nm Gate-All-Around Early/Plus): 3nm process nodes adopt GAA, the next-generation device architecture. To overcome the physical scaling and performance limitations of the FinFET architecture, Samsung is developing its unique GAA technology, MBCFET^TM (Multi-Bridge-Channel FET) that uses a nano-sheet device. By enhancing the gate control, the performance of 3nm nodes will be significantly improved.

HPC (High-Performance Computing) Solutions

Samsung Foundry delivers the technology solutions to drive the latest hyper-scale datacenters and accelerate the growth of Artificial Intelligence (AI) and Machine Learning capability. From the latest 7LPP technology and beyond with its EUV capability, to the differentiated high-speed IPs such as 100Gbps+ SerDes on top of the innovative 2.5D/3D heterogeneous packaging, Samsung delivers the total platform solutions to greatly increase computing power and accelerate AI revolution.

Connected Device Solutions

From low-power microcontroller units (MCU) and next-generation connected devices to the most sophisticated autonomous vehicles based on 5G and Vehicle to Everything (V2X) communication, Samsung Foundry offers full-featured turnkey platforms to enable compelling products. A broad technology portfolio from 28/18 FD-SOI with eMRAM and RF capability to advanced 10/8nm FinFET processes will enable a great end-user experience for connected devices.

Mr. Bae continued, “Over the past year, we have focused on strengthening our EUV process portfolio to provide each of our customers with the finest technologies. Applying GAA structure to our next generation process node will enable us to take the lead in opening a new smart, connected world, while also to reinforcing our technology leadership.”

Details regarding Samsung Foundry can be found at www.samsungfoundry.comand www.linkedin.com/company/samsungfoundry.