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Samsung Holds its Annual “Samsung Memory Solution CIO Forum 2012”

on November 07, 2012

Samsung Electronics announced its fourth generation green memory solution at the annual Memory Solution CIO Forum at the Shilla hotel, Seoul, Korea. Designed to achieve superior system level performances, the new solution introduces a combination of its advanced 20 nanometer (nm) class* DDR3 and 20nm-class SSDs based on high-performance SATA 6.0Gb/s and SAS interfaces respectively.



The new green memory solution addresses the benefits of green memory for next-generation enterprise servers, server storage solutions and personal computing solutions, broadening the benefits of green memory solutions even further throughout the IT industry. The reduced costs and optimized IT expenditure efficiencies are well in-line with the creating shared value (CSV) framework.




The performance benefits were achieved by incorporating Samsung’s advanced 20nm-class DDR3 technology and its powerful SSD solutions; the SATA 6.0Gb/s interface SM843 for server systems and the SAS interface SM1625 for enterprise storage.

In comparison with a datacenter utilizing 40nm-class DRAM and HDD, the overall performance rises six-fold while power consumption decreases by 20 percent on server systems and 60 percent on storage systems.

Also, should all current systems including servers, storage and notebooks, adopt 10 percent of SSDs and 20 percent of DDR3, in 2013 alone, an anticipated power savings of 3.5 terawatt per hour could be achieved. This translates into a 2.41-million ton savings of greenhouse gases, which is equivalent to planting 60 million 10-year-old trees.

Following the announcement of its 20nm-class 2Gb DDR3 DRAM in September, 2011, the company initiated production of its 20nm-class 4Gb DDR3 last month, more than tripling its productivity compared to 40nm-class DDR3 on notebook PCs, and also marking a major turning point from the conventional 40nm-class and 30nm-class DRAM used in personal computers.

By replacing notebooks using 40nm-class 4GB DDR3 and HDDs with Samsung’s advanced 20nm-class 4GB DDR3 module paired with its latest 250-Gigabyte SSDs, the performance is comparable with newly launched notebooks and battery life is extended by approximately one hour, greatly raising user convenience and mobility.

Highlighting the Samsung Memory Solution CIO Forum, industry leaders including Kang-tae Lee, chairman of Federation of Korean Information Industries CIO Forum, Sang Kyun Cha, professor at Seoul National University and research director of SAP Korea, Jung Il Kim, manager of Semiconductor Display part at Ministry of Knowledge Economy, and Kyo Joong Jung, vice president of EMC Korea, shared insights on raising green IT efficiencies and introduced case studies on eco-friendly innovation. Latest IT technologies and trends were discussed among the 300-and-plus attendees consisting of corporate CIOs and IT industry specialists.

Samsung will continue to pursue evolutionary developments through its next-generation green memory strategy, which is synchronized with the concept of CSV through “3S Innovation: system, solution, software.” The evolutionary developments of green memory solutions involve next-generation process technology, ultra high-speed memory interface technology, high reliability circuit design and intelligent package technology.

For more information about Samsung Green Memory, visit

* 20nm-class means a process technology node somewhere between 20 and 29 nanometers.

** 30nm-class means to a process technology node somewhere between 30 and 39 nanometers

*** 40nm-class means a process technology node somewhere between 40 and 49 nanometers.




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